SI4436DY
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RoHSCOMPLIANT
FEATURESDTrenchFETr Power MOSFETDOptimized for “Low Side” SynchronousRectifier OperationD100 % Rg and UIS Tested
APPLICATIONSDCCFL Inverter
Si4436DYVishay SiliconixNew Product
Document Number: 73664S–60081—Rev. A, 23–Jan–06www.vishay.com
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N-Channel 60–V (D–S) MOSFET
PRODUCT SUMMARY
VDS (V)rDS(on) (W)ID (A)aQg (Typ)0.036 at VGS = 10 V8105nC600.043 at VGS = 4.5 V810.5 nC
N-Channel MOSFETGD
SSO-8
SDSDSDGD5678Top View234
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Ordering Information:Si4436DY-T1–E3 (Lead–(Pb)–free)ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitDrain-Source VoltageVDS60Gate-Source VoltageVGS
" 20
V
TC = 25 _C8a
ContinuousDrainCurrent=150TC = 70 _C6.8Continuous Drain Current (TJ = 150 _C)TA = 25 _CI
D6.1b, c
TA = 70 _C4.8b, cPulsed Drain CurrentIDM25A
ContinuousSourceDrainDiodeCurrentTC = 25 _C4.2Continuous Source-Drain Diode CurrentTA = 25 _CIS2.1b, c
Avalanche CurrentL=01mHIAS15Single Pulse Avalanche EnergyL = 0.1 mHEAS11.2mJTC = 25 _C5
MaximumPowerDissipationTC = 70 _C3.2Maximum Power DissipationTA = 25 _CPD2.5b, cWTA = 70 _C1.6b, cOperating Junction and Storage Temperature RangeTJ, Tstg– 55 to 150_C
THERMAL RESISTANCE RATINGSParameterSymbolTypicalMaximumUnitMaximum Junction-to-Ambientb, dt p 10 secRthJA3850Maximum Junction-to-Foot (Drain)Steady StateRthJF2025_C/W
Notes:a.Package limited.b.Surface mounted on 1” x 1” FR4 board.c.t = 10 sec.d.Maximum under steady state conditions is 85 _C/W.Si4436DYVishay SiliconixNew Product
www.vishay.com2Document Number: 73664
S–60081—Rev. A, 23–Jan–06
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)ParameterSymbolTest ConditionMinTypMaxUnitStaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 mA60VVDS Temperature Coefficient DVDS/T
J
I=25055VGS(th) Temperature CoefficientDVGS(th)/TJ ID = 250 mA
– 6.3mV/_C
Gate-Source Threshold VoltageVGS(th)VDS = VGS, ID = 250 mA1.52.5VGate-Source LeakageIGSSVDS = 0 V, VGS = " 20"100nA
ZeroGateVoltageDrainCurrentVDS = 60 V, VGS = 0 V1Zero Gate Voltage Drain CurrentIDSS
VDS = 60 V, VGS = 0 V, TJ = 55 _C10
mA
On-State Drain CurrentaID(on)VDS w 5 V, VGS = 10 V25ADrainSourceOnStateResistanceDS()VGS = 10 V, ID = 4.6 A0.0300.036Drain-Source On-State ResistancearDS(on)
VGS = 4.5 V, ID = 4.2 A0.0350.043
W
Forward TransconductanceagfsVDS = 15 V, ID = 4.6 A20SDynamicb
Input CapacitanceCiss1100Output CapacitanceCossVDS = 30 V, VGS = 0 V, f = 1 MHz90pFReverse Transfer CapacitanceCrss55p
TotalGateChargeVDS = 30 V, VGS = 10 V, ID = 4.6 A2132Total Gate ChargeQg
10.516
Gate-Source ChargeQgsVDS = 30 V, VGS = 4.5 V, ID= 4.6 A3.5nC
Gate-Drain ChargeQgd4.2Gate ResistanceRgf = 1 MHz3.35W
Turn-On Delay Timetd(on)2030Rise Timetr150225Turn-Off Delay Timetd(off)VDD = 30 V, RL = 5.4 WID^ 5.6 A, VGEN = 4.5 V, Rg = 1 W2030Fall Timetf6090Turn-On Delay Timetd(on)1015ns
Rise TimetrV1525Turn-Off Delay Timetd(off)DD = 30 V, RL = 5.4 WID^ 5.6 A, VGEN = 10 V, Rg = 1 W2540Fall Timetf1015Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 _C4.2Pulse Diode Forward CurrentaISM25A
Body Diode VoltageVSDIS = 2 A0.81.2VBody Diode Reverse Recovery Timetrr2550nsBody Diode Reverse Recovery ChargeQrr55Adi/dt100A/sT252550nCReverse Recovery Fall TimetaIF = 5.5 A, di/dt = 100 A/ms, TJ = 25 _C19Reverse Recovery Rise Timetb6ns
Notesa.Pulse test; pulse width v300 ms, duty cycle v2 %.
b.Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect device reliability.
