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2SK2802
Silicon N Channel MOS FETLow Frequency Power Switching
ADE-208-537C (Z)4th. EditionJun 1998
Features
• Low on-resistance
RDS(on) = 0. 2Ω typ. (VGS = 4 V, ID = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK)
Outline
1
23
1. Source2. Gate3. DrainMPAK
D
SG2SK2802
2Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingsUnit
Drain to source voltageVDSS30V
Gate to source voltageVGSS±10V
Drain currentID0.5A
Drain peak currentID(pulse)Note11.0A
Channel dissipationPch Note2150mW
Channel temperatureTch150°C
Storage temperatureTstg–55 to +150°C
Note:1.PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
ItemSymbolMinTypMaxUnitTest Conditions
Drain to source breakdownvoltageV(BR)DSS30——VID = 100µA, VGS = 0
Gate to source breakdownvoltageV(BR)GSS±10——VIG = ±100µA, VDS = 0
Zero gate voltege draincurrentIDSS——1.0µAVDS = 30 V, VGS = 0
2SK1306Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
123TO-220FM
1. Gate2. Drain3. SourceD
G
S2SK1306
2Absolute Maximum Ratings (Ta = 25°C)
ItemSymbolRatingsUnit
Drain to source voltageVDSS100V
Gate to source voltageVGSS±20V
Drain currentID15A
Drain peak currentID(pulse)*160A
Body to drain diode reverse drain currentIDR15A
Channel dissipationPch*230W
Channel temperatureTch150°C
Storage temperatureTstg–55 to +150°C
Notes:1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at TC = 25°C2SK1306
3Electrical Characteristics (Ta = 25°C)
ItemSymbolMinTypMaxUnitTest conditions
Drain to source breakdownvoltageV(BR)DSS100——VID = 10 mA, VGS = 0
2SK30ATM
2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
Unit
Gate-drain voltage VGDS −50 V
Gate current IG 10 mA
Drain power dissipation PD 100 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C)
