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IR2214中文资料

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Product Summary
VOFFSET 1200V max. IO+/- (typ.) 2.0 A / 3.0A VOUT 10.4V - 20V Deadtime matching (max) 75nsec Deadtime (typ) 330nsec Desat blanking time (typ) 3µsec DSH,DSL input voltage threshold (typ) 8.0V Soft shutdown time (typ) 9.6µsec
Min.
VS + 11.5 Note 2 VS VCOM 11.5 -5 0 0 VB - 20 VCC - 20 -40
Max.
VS + 20 1200 VS + 20 VCC 20 5 VCC VCC VB VCC 125
Units
V
°C
Note 1: While internal circuitry is operational below the indicated supply voltages, the UV lockout disables the output drivers if the UV thresholds are not reached. Note 2: Logic operational for VS from VSS-5 to VSS+1200V. Logic state held for VS from VSS-5V to VSS-VBS. (Please refer to the Design Tip DT97-3 for more details).
Symbol
VB VS VHO VLO VCC COM VIN VFLT VDSH VDSL TA
Definition
High side floating supply voltage (Note 1) High side floating supply offset voltage High side output voltage (HOP, HON and SSDH) Low side output voltage (LOP, LON and SSDL) Low side and logic fixed supply voltage (Note 1) Power ground Logic input voltage (HIN, LIN and FLT_CLR) Fault input/output voltage (FAULT/SD and SY_FLT) High side DS pin input voltage Low side DS pin input voltage Ambient temperature
Pin: V CC , V SS , V B , VS
Symbol V CCUV+ V CCUVVCCUVH VBSUV+ VBSUVV BSUVH ILK IQBS IQCC Definition Vcc supply undervoltage positive going threshold Vcc supply undervoltage negative going threshold Vcc supply undervoltage lockout hysteresis (VB -VS ) supply undervoltage positive going threshold (VB -VS ) supply undervoltage negative going threshold (VB -VS ) supply undervoltage lockout hysteresis Offset supply leakage current Quiescent V BS supply current Quiescent Vcc supply current Min Typ Max Units Test Conditions 9.3 8.7 9.3 8.7 10.2 9.3 0.9 10.2 9.3 0.9 400 0.7 11.4 10.3 11.4 10.3 50 800 2.5
Units
V
V/ns W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. All voltage parameters are absoute voltages referenced to VSS. The VS offset rating is tested with all supplies biased at 15V differential.
HIN SSDH DSH VS
Package
24-Lead SSOP
DC+
Typical Connection
(Refer to Lead Assignments for correct pin configuration). This/ These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
LIN
IR2214SS/IR22141SS IR2214
The IR2214SS/IR22141SS) is a gate driver suited to drive a single half bridge in power switching applications. The high gate driving capability (2A source, 3A sink) and the low quiescent current enable bootstrap supply techniques in medium power systems. The IR2214SS/IR22141SS driver features full short circuit protection by means of the power transistor desaturation detection. The IR2214SS/IR22141SS manages all the half-bridge faults by turning off smoothly the desaturated transistor through the dedicated soft shut down pin, therefore preventing over-voltages and reducing EM emissions. In multi-phase system IR2214SS/IR22141SS drivers communicate using a dedicated local network (SY_FLT and FAULT/SD signals) to properly manage phase-to-phase short circuits. The system controller may force shutdown or read device fault state through the 3.3 V compatible CMOS I/O pin (FAULT/SD). To improve the signal immunity from DC-bus noise, the control and power ground use dedicated pins enabling low-side emitter current sensing as well. Under voltage conditions in floating and low VCC VB 15 V voltage circuits are managed HOP independently. HON
Min.
VB - 25 -0.3 VS - 0.3 -0.3 VCC - 25 VCOM -0.3 -0.3 -0.3 VB -25 VCC - 25 — — — — -55 —
Max.
VB + 0.3 1225 VB + 0.3 25 VCC + 0.3 VCC + 0.3 VCC + 0.3 VCC + 0.3 VB + 0.3 VCC + 0.3 50 1.5 65 150 150 300
ADVANCE DATA
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS, all currents are defined positive into any lead The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
SymbolN VFLT VDSH VDSL dVs/dt PD RthJA TJ TS TL High side offset voltage
Definition
High side floating supply voltage High side floating output voltage (HOP, HON and SSDH) Low side and logic fixed supply voltage Power ground Low side output voltage (LOP, LON and SSDL) Logic input voltage (HIN, LIN and FLT_CLR) FAULT input/output voltage (FAULT/SD and SY_FLT) High side DS input voltage Low side DS input voltage Allowable offset voltage slew rate Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds)

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IRL1004中文资料

IRL1004中文资料

IRL1004中文资料IRL1004HEXFET ? Power MOSFETPD - 91702BParameterTyp.Max.UnitsR θJC Junction-to-Case–––0.75R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/WR q JAJunction-to-Ambient–––62Thermal ResistancelLogic-Level Gate Drivel Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ratingl 175°C Operating Temperature l Fast Switchingl Fully Avalanche Rated Fifth Generation HEXFET ? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.Description11/29/99ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 130 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 92 A I DMPulsed Drain Current 520P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage± 16V E AS Single Pulse Avalanche Energy 700mJ I AR Avalanche Current78A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (1.6mm from case)°CMounting torque, 6-32 or M3 srew10 lbf?in (1.1N?m)Absolute Maximum Ratings 1TO-220ABIRL1004IRL1004IRL1004IRL1004IRL1004IRL1004IRL1004。

BY214中文资料

BY214中文资料

BY214-400--->1000®August 1998-Ed:1A RECTIFIER DIODESSTANDARD RECTIFIERHIGH SURGE CURRENT CAPABILITY LOW FORWARD VOLTAGE DROPSymbol ParameterValue Unit I F(AV)Average forward current *Ta=90°C 6A I FSM Surge non repetitive forward current tp=10ms sinusoidal 400A P tot Power dissipation *Ta=90°C6W Tstg Tj Storage and junction temperature range-65to +150°C T LMaximum lead temperature for solderingduring 10s at 4mm from case230°C*Single phase,half wave,resistive or inductive load.ABSOLUTE RATINGS (limiting values)Symbol ParameterValue Unit Rth (j-a)Junction ambient *10°C/W*On infinite heatsink with 10mm lead lenghtTHERMAL RESISTANCE Symbol ParameterBY214-Unit 4006008001000V RRMRepetitive peak reverse voltage4006008001000VAG (Plastic)I F(av)6A V RRM 1000V V F (max)1.2VMAIN PRODUCTS CHARACTERISTICS1/2PACKAGE MECHANICAL DATA AG (Plastic)Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-proval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics ©1998STMicroelectronics -Printed in Italy -All rights reserved.STMicroelectronics GROUP OF COMPANIESAustralia -Brazil -Canada -China -France -Germany -Italy -Japan -Korea -Malaysia -Malta -Mexico -Morocco -The Netherlands Singapore -Spain -Sweden -Switzerland -Taiwan -Thailand -United Kingdom -U.S.A.note 2B AB C note 1note 1DDO/O /O /L1L1REF.DIMENSIONSNOTESMillimeters Inches Min.Max.Min.Max.A90.3541-The lead is not controlled within zone L1.2-The minimum axial length within which the device may be placed bent at right angles is 0.79”(20mm).B 200.787∅C 80.315∅D 1.351.450.0530.057L11.270.050Marking :Type number Weight :2.16gSymbol Test ConditionsMin.Typ.Max.Unit V F *Tj =25°C I F =20A 1.2V I R **T j =100°CV R =V RRM250µAPulse test :*tp =380µs,duty cycle <2%**tp =5ms,duty cycle <2%ELECTRICAL CHARACTERISTICS BY214-400--->10002/2。

IR器件选型

IR器件选型

3-Phase Drivers IR2136 IR21362 600 600 Yes Yes No No Yes Yes No No 3.3 Yes 3.3 Yes 10-20 200 420 8.35 7.95 9 8.7 675 425 80 35 2500 660 400 590 10-20 250 500 8.7 8.3 8.7 8.3 1300 600 700 80 40 700 700 400 700 10-20 200 420 8.35 7.95 9 8.7 675 425 80 35 800 660 400 590 10-20,12-20 10-20,12-20 250 250 500 500 8.6 8.2 0.4 8.6 8.2 0.4 750 700 750 90 40 250 850 400 650 10.4 9.4 1 10.4 9.4 1 750 700 750 90 40 250 850 400 650 10-20 200 350 8.9 8.2 0.7 8.9 8.2 0.7 425 400 125 50 40 290 25 750 150 600 11.5-20 200 350 10.4 9.4 1 10.4 9.4 1 425 400 125 50 40 290 25 750 150 600 12-20 200 350 11.1 10.9 0.2 11.1 10.9 0.2 425 400 125 50 40 290 25 750 150 600 12-20 200 350 11.1 10.9 0.2 11.1 10.9 0.2 425 400 125 50 40 290 25 750 150 600 12-20 200 350 11.1 10.9 11.1 10.9 250 180 125 50 40 290 25 750 150 600 12-20 200 350 11.1 10.9 11.1 10.9 250 180 125 50 40 290 25 750 150 600 10-20 200 350 8.9 8.2 8.9 8.2 425 400 125 50 40 290 25 750 150 600 10-20,12-20 10-20,12-20 250 250 500 500 8.6 8.2 0.4 8.6 8.2 0.4 750 700 750 90 40 250 850 400 650 10.4 9.4 1 10.4 9.4 1 750 700 750 90 40 250 850 400 650
2SD2114KT146V;2SD2114KT146W;2SD2144STPW;2SD2144STPV;2SD2144STPU;中文规格书,Datasheet资料

2SD2114KT146V;2SD2114KT146W;2SD2144STPW;2SD2144STPV;2SD2144STPU;中文规格书,Datasheet资料



c 2012 ROHM Co., Ltd. All rights reserved. ○
2/3
2012.01 - Rev.C
/
2SD2114K
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10000
TRANSITION FREQUENCY : fT (MHz)
∗ Measured using pulse current

c 2012 ROHM Co., Ltd. All rights reserved. ○
1/3
2012.01 - Rev.C
/
2SD2114K
Packaging specifications and hFE
Data Sheet
Ta=25°C VCE=10V Measured using pulse current.
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
5000 2000 1000 500 200 100 50 20 10 −1 −2
ON RESISTANCE : Ron (Ω)
Ta=25°C f=1MHz IE=0A
100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5
Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ
−5 −10 −20 −50 −100 −200 −500 −1000 EMITTER CURRENT : IE (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)