0449140602;中文规格书,Datasheet资料

RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.•Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 18 dB Drain Efficiency — 33%IMD — -34 dBc•Typical Two-Tone Performance @ 900 MHz, 28 Volts, I DQ = 50 mA, P out = 4 Watts PEP Power Gain — 19 dB Drain Efficiency — 33%IMD — -39 dBc•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power Features•Characterized with Series Equivalent Large-Signal Impedance Parameters •On-Chip RF Feedback for Broadband Stability •Integrated ESD Protection •RoHS Compliant•In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +68Vdc Gate-Source Voltage V GS -0.5, +12Vdc Storage Temperature Range T stg -65 to +150°C Operating Junction TemperatureT J150°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (1,2)Unit Thermal Resistance, Junction to CaseCase Temperature 76°C, 4 W PEP , Two-Tone Case Temperature 79°C, 4 W CWR θJC8.88.5°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1C (Minimum)Machine Model (per EIA/JESD22-A115) A (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)1.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.Document Number: MW6S004NRev. 4, 6/2009Freescale Semiconductor Technical DataMW6S004NT1Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T A = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——500nAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 50 mAdc)V GS(th) 1.22 2.7Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 50 mAdc)V GS(Q)— 2.7—Vdc Fixture Gate Quiescent Voltage (1)(V DD = 28 Vdc, I D = 50 mAdc, Measured in Functional Test)V GG(Q) 2.23 4.2Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 50 mAdc)V DS(on)—0.270.37VdcDynamic CharacteristicsReverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss —21—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —25—pF Input Capacitance(V DS = 28 Vdc, V GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)C iss—30—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f1 = 1960 MHz, f2 = 1960.1 MHz, Two-Tone Test Power Gain G ps 16.51820dB Drain EfficiencyηD 2833—%Intermodulation Distortion IMD —-34-28dBc Input Return LossIRL—-12-10dBTypical Performance (In Freescale 900 MHz Demo Board, 50 ohm system) V DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEP , f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing Power Gain G ps —19—dB Drain EfficiencyηD —33—%Intermodulation Distortion IMD —-39—dBc Input Return LossIRL—-12—dB1.V GG = 11/10 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit Schematic.MW6S004NT1Figure 1. MW6S004NT1 Test Circuit SchematicZ70.210″ x 1.220″ Microstrip Z80.054″ x 0.680″ Microstrip Z90.054″ x 0.260″ Microstrip Z100.025″ x 0.930″ MicrostripPCBArlon CuClad 250GX-0300-55-22, 0.020″, εr = 2.5Z10.054″ x 0.430″ Microstrip Z20.054″ x 0.137″ Microstrip Z30.580″ x 0.420″ Microstrip Z40.580″ x 0.100″ Microstrip Z50.025″ x 0.680″ Microstrip Z60.210″ x 0.100″ MicrostripV SUPPLYTable 6. MW6S004NT1 Test Circuit Component Designations and ValuesPartDescriptionPart Number Manufacturer C1100 nF Chip Capacitor CDR33BX104AKYS Kemet C2, C3, C6, C79.1 pF Chip Capacitors ATC100B9R1CT500XT ATC C4, C510 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C810 μF, 35 V Tantalum Chip Capacitor T490D106K035AT Kemet R1 1 k Ω, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R210 k Ω, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R310 Ω, 1/4 W Chip ResistorCRCW120610R0FKEAVishayMW6S004NT1Figure 2. MW6S004NT1 Test Circuit Component LayoutMW6S004NT1TYPICAL CHARACTERISTICS1420191716G p s , P O W E R G A I N (d B )100.1TWO−TONE SPACING (MHz)1100Figure 6. Intermodulation Distortion Productsversus Tone Spacing 26P in , INPUT POWER (dBm)1618222414Figure 7. Pulsed CW Output Power versusInput PowerI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )181520MW6S004NT1TYPICAL CHARACTERISTICSA C P R (dB )−70P out , OUTPUT POWER (WATTS) AVG.50−2040−3030−4020−5010−600.01110Figure 8. Single-Carrier CDMA ACPR, Power Gainand Drain Efficiency versus Output PowerP out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain versus Output Power 7151906171618234G p s , P O W E R G A I N (d B )1800−250f, FREQUENCY (MHz)Figure 11. Broadband Frequency Response−5−10−15−20210020502000195019001850S 11 (d B )851ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )0.118.517.516.515.5MW6S004NT1TYPICAL CHARACTERISTICS25010790T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF versus Junction TemperatureThis above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 4 W PEP, and ηD = 33%.MTTF calculator available at /rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.106105104110130150170190M T T F (H O U R S )210230MW6S004NT1f = 1930 MHzZ o = 10 ΩZ loadZ sourcef = 1990 MHzf = 1930 MHzf = 1990 MHzV DD = 28 Vdc, I DQ = 50 mA, P out = 4 W PEPfMHzZ sourceWZ loadW1930 1.96 - j5.348.78 + j6.961960 1.89 - j5.108.93 + j7.461990 1.82 - j4.859.11 + j7.97Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Z source Z loadOutputMatchingNetworkFigure 13. Series Equivalent Source and Load ImpedanceMW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ5000.649-116.3407.902105.4200.056-73.7500.548-33.5705500.695-121.6807.50298.7900.053-80.5700.593-41.4806000.733-126.5607.11192.3800.049-87.0100.632-48.8906500.770-131.340 6.69986.2900.045-93.2800.669-56.0007000.800-135.740 6.30280.4500.041-99.1200.701-62.8107500.827-140.030 5.92274.8500.038-104.8500.727-69.2908000.848-143.950 5.55269.6300.035-110.1100.750-75.3508500.866-147.690 5.22064.5800.032-115.2200.770-81.1309000.882-151.140 4.89159.9700.029-119.9600.786-86.5709500.895-154.560 4.59755.4900.026-124.7900.800-91.73010000.907-157.590 4.31551.2400.024-129.0900.813-96.66010500.916-160.540 4.06047.1700.022-133.3700.824-101.34011000.923-163.310 3.81943.3400.020-137.4600.833-105.79011500.929-165.930 3.60139.6500.018-141.4400.840-110.05012000.935-168.430 3.39836.1100.017-145.3300.847-114.17012500.938-170.770 3.21032.7400.015-149.5400.851-118.06013000.942-173.030 3.03629.4900.014-153.4300.856-121.88013500.945-175.140 2.87526.3600.013-157.4600.859-125.52014000.948-177.170 2.72823.3300.012-161.9100.863-129.02014500.951-179.090 2.59020.4400.011-166.1800.866-132.39015000.953179.030 2.46417.6400.010-170.6300.869-135.65015500.954177.270 2.34714.9200.009-174.8900.872-138.76016000.955175.570 2.24012.3200.008179.9500.875-141.75016500.956173.980 2.1399.7400.008173.9200.877-144.65017000.957172.350 2.0477.2500.007167.7100.880-147.48017500.957170.800 1.958 4.8100.007161.8100.882-150.18018000.958169.340 1.879 2.4400.006155.3700.884-152.76018500.959167.920 1.8060.2600.006148.9400.886-155.23019000.959166.510 1.736-1.9800.005142.6300.887-157.58019500.960165.200 1.668-4.3100.005136.7400.888-160.05020000.959163.800 1.611-6.2400.005129.9100.890-162.07020500.959162.420 1.555-8.2900.005123.8100.891-164.19021000.958161.170 1.504-10.2700.005118.2000.892-166.14021500.958159.840 1.456-12.2100.005112.7400.893-168.06022000.957158.560 1.412-14.1300.005108.4600.894-169.84022500.957157.160 1.372-16.0100.005103.8400.896-171.61023000.955155.870 1.334-17.8700.00599.3100.896-173.26023500.954154.510 1.300-19.7000.00595.3600.897-174.83024000.953153.120 1.268-21.5100.00591.0300.898-176.39024500.953151.7301.238-23.2500.00587.4600.899-177.840MW6S004NT1Table 7. Common Source Scattering Parameters (V DD = 28 V, 50 ohm system) (continued)I DQ = 50 mAf MH S 11S 21S 12S 22MHz |S 11|∠φ|S 21|∠φ|S 12|∠φ|S 22|∠φ25000.952150.340 1.211-25.1200.00684.1600.899-179.27025500.950149.010 1.187-26.9200.00680.7800.897179.42026000.949147.380 1.166-28.6500.00677.8800.897178.12026500.948145.920 1.144-30.4200.00774.6700.898176.84027000.944144.200 1.121-32.3100.00771.3600.896175.48027500.944142.790 1.105-34.2300.00767.9800.897174.06028000.943141.020 1.088-36.0000.00763.9500.897172.93028500.941139.410 1.073-37.8700.00761.2300.896171.63029000.940137.640 1.058-39.7600.00859.8100.896170.33029500.938135.900 1.045-41.6800.00858.2800.896169.04030000.937133.8601.032-43.6100.00856.7400.895167.510分销商库存信息: FREESCALEMW6S004NT1。

Multi-vendor Communications with CIP Messages: Data can be exchanged with a
variety of devices connected by EtherNet/IP because it supports the standard CIP (Common Industrial Protocol) message communications. This allows easy communication from an Omron PLC to other vendors EtherNet/IP PLCs.
Troubleshooting Functions: A variety of functions are provided to quickly identify and handle errors.
• Self-diagnosis at power ON. • PING command to check the connection with another node • Error Log functions record the time of occurrence and other error details
OMRON CANADA, INC. • HEAD OFFICE Toronto, ON, Canada • 416.286.6465 • 866.986.6766 •
OMRON ELETRÔNICA DO BRASIL LTDA • HEAD OFFICE São Paulo, SP, Brasil • 55.11.2101.6300 • .br
Rapid Troubleshooting – A variety of built-in functions enable you to quickly identify and handle errors, including connection check with other nodes, unit self-diagnosis and error logging.

description :A mmB mmC mmD mm Emm= Start of winding Marking = Inductance codeEigenschaften / properties Wert / valueEinheit / unittol.Induktivität /inductanceDC-Widerstand /DC-resistance DC-Widerstand /DC-resistance Nennstrom /rated currentSättigungsstrom /saturation current Eigenres.-Frequenz /self-res.-fequency33% Umgebungstemperatur / temperature:+20°CFerrit Endoberfläche / finishing electrode:CZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateKunde / customerFreigabe erteilt / general release:C Lötpad / soldering spec.:B Elektrische Eigenschaften / electrical properties:E Testbedingungen / test conditions:Luftfeuchtigkeit / humidity:It is recommended that the temperature of the part does F Werkstoffe & Zulassungen / material & approvals:Draht / wire:Class HG Eigenschaften / general specifications:Betriebstemp. / operating temperature: -40°C - + 125°C Sn/Ag/Cu - 96.5/3.0/0.5%DATUM / DATE : 2010-08-01max.mA Datum / date.................................................................................Unterschrift / signature Kontrolliert / approvedTestbedingungen / test conditions D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked SRFMHzUmgebungstemp. / ambient temperature: -40°C - + 85°C Basismaterial / base material:not exceed 125°C under worst case operating conditions.POWER-CHOKE WE-TPCA Mechanische Abmessungen / dimensions:1,60 typ.1,60typ.2,8 ± 0,2HP 34401 A für/for R DC und I DC0,860± 30%150,00µH220R DC typ 0,770I DC D Prüfgeräte / test equipment:HP 4274 A für/for L und/and Q @ 20°C @ 20°C ∆T=30 K 100 kHZ / 0,1V4207,0I sat |ΔL/L|<35%Version 5.....................................................................................................................................................................................................................................................Würth Elektroniktyp.R DC max typ.L max.mA typ.Version 44,8 ± 0,24,8 ± 0,2Type 4828Änderung / modificationVersion 1Version 2Version 6[mm]5,302,001,502,001,80MarkingABCDDEdescription :CZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateFreigabe erteilt / general release:Kontrolliert / approvedDATUM / DATE : 2010-08-01Würth ElektronikKunde / customer...................................................................................................................................................................POWER-CHOKE WE-TPCH Induktivitätskurve / Inductance curve :Version 4Version 5Änderung / modificationVersion 1Version 2D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Datum / dateUnterschrift / signature Version 6 ...................................................................................................................................................................Geprüft / checked 0,0020,0040,0060,0080,00100,00120,00140,00160,000,000,100,200,300,400,500,600,70L (µH )Current (A)Induktivität vs Strom (typ.) / Inductance vs Current (typ.)description :I Rollenspezifikation / tape and reel specification:A 8,0± 1,0mm B4,00± 0,1mma178± 0,5mm b 20,20± 0,1mm+ 0,5- 1,0d 50,0± 1,0mmCZ10-08-01ME 09-01-15MST08-04-11SSt08-05-20SST05-10-10Name Datum / dateWürth Elektronik...................................................................................................................................................................Würth Elektronik eiSos GmbH & Co.KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Geprüft / checked Kontrolliert / approvedÄnderung / modification...................................................................................................................................................................Datum / dateUnterschrift / signature Gurtspezifikation / Tape specification: Rollenspezifikation / Reel specification:Freigabe erteilt / general release:Kunde / customermm 13,00POWER-CHOKE WE-TPCDATUM / DATE : 2010-08-01Version 5c Version 1Version 2Version 4Version 6Ø cadbThe force for tearing off cover tape is 20 to 70 grams in arrow direction150feeding directionThis electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety and reliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control),transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eiSos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.分销商库存信息: WURTH-ELECTRONICS 744043151。

Bezeichnung :description := Start of winding Marking = Inductance code33% Umgebungstemperatur / temperature:+20°CFerrit / ferrite ME 08-11-24MST08-04-11ME 04-10-11NameDatum / dateVersion 4Änderung / modificationVersion 1Version 3..................................................................................Class HSn/Ag/Cu - 96.5/3.0/0.5%Geprüft / checked ...............................................................................................Freigabe erteilt / general release:Kunde / customerF Werkstoffe & Zulassungen / material & approvals :G Eigenschaften / general specifications :It is recommended that the temperature of the part does not exceed 125°C under worst case operating conditions.Endoberfläche / finishing electrode:Basismaterial / base material:Würth Elektronikhttp://www.we-online.deWürth Elektronik eiSos GmbH & Co. KGD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Kontrolliert / approvedDraht / wire:D Prüfgeräte / test equipment :Datum / date..................................................................................Unterschrift / signature E Testbedingungen / test conditions :Betriebstemp. / operating temperature: -40°C - + 125°C Umgebungstemp. / ambient temperature: -40°C - + 85°C Artikelnummer / part number : Luftfeuchtigkeit / humidity:SPEICHERDROSSEL WE-TPC POWER-CHOKE WE-TPCHP 34401 A für/for I DC und/and R DCHP 4274 A für/for L und/and SRF 7440660035description :ME 08-11-24MST08-04-11ME 04-10-11NameDatum / dateVersion 4Änderung / modificationVersion 1Version 3http://www.we-online.deD-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400Würth Elektronik eiSos GmbH & Co. KGGeprüft / checked Kontrolliert / approvedWürth Elektronik...................................................................................................................................................................................................................................................................Datum / dateUnterschrift / signature H Induktivitätskurve / Inductance curve :Freigabe erteilt / general release:Kunde / customerPOWER-CHOKE WE-TPCDATUM / DATE : 2008-11-24description :a 330,0± 0,5mmb 20,20± 0,1mmc 13,00± 1,0mmd 100,0± 1,0mmME 08-11-24MST08-04-11ME 04-10-11NameDatum / dateDatum / dateUnterschrift / signatureWürth ElektronikVersion 3Version 4 http://www.we-online.de...............................................................................................Geprüft / checked Kontrolliert / approvedÄnderung / modificationVersion 1D-74638 Waldenburg · Max-Eyth-Strasse 1 - 3 · Germany · Telefon (+49) (0) 7942 - 945 - 0 · Telefax (+49) (0) 7942 - 945 - 400..................................................................................Würth Elektronik eiSos GmbH & Co. KG..................................................................................POWER-CHOKE WE-TPCRollenspezifikation / Reel specification:Freigabe erteilt / general release:Kunde / customerThis electronic component has been designed and developed for usage in general electronic equipment. Before incorporating this component into any equipment where higher safety and reliability is especially required or if there is the possibility of direct damage or injury to human body, for example in the range of aerospace, aviation, nuclear control, submarine, transportation, (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc, Würth Elektronik eiSos GmbH must be informed before the design-in stage. In addition, sufficient reliability evaluation checks for safety must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.分销商库存信息: WURTH-ELECTRONICS 7440660035。