当前位置：文档之家 › IPB100N06S3L-04中文资料

IPB100N06S3L-04中文资料

  • 格式：pdf
  • 大小：197.16 KB
  • 文档页数：9

IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04

OptiMOS®-T2 Power-Transistor

Features• N-channel - Enhancement mode

• Automotive AEC Q101 qualified• MSL1 up to 260°C peak reflow• 175°C operating temperature• Green product (RoHS compliant)• 100% Avalanche tested

Maximum ratings, at Tj=25 °C, unless otherwise specified

ParameterSymbolConditionsUnitContinuous drain current1)IDTC=25 °C, VGS=10 V

100A

TC=100 °C, VGS=10 V

2)

100

Pulsed drain current2)ID,pulseTC=25 °C

400

Avalanche energy, single pulse2)EASID=50 A

1090mJ

Avalanche current, single pulseIAS100A

Gate source voltage3)V

GS±16V

Power dissipationPtotTC=25 °C214WOperating and storage temperatureTj, Tstg-55 ... +175°CIEC climatic category; DIN IEC 68-155/175/56

Value

VDS 55VRDS(on),max (SMD version)3.5mΩ

ID100A

Product Summary

TypePackageMarkingIPB100N06S3L-04PG-TO263-3-23PN06L04IPI100N06S3L-04PG-TO262-3-13PN06L04IPP100N06S3L-04PG-TO220-3-13PN06L04

PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2

Rev. 1.1page 12007-11-07

元器件交易网www.cecb2b.com IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04

ParameterSymbolConditionsUnitmin.typ.max.

Thermal characteristics2)Thermal resistance, junction - caseRthJC--0.7K/WThermal resistance, junction - ambient, leadedRthJA--62

SMD version, device on PCBRthJAminimal footprint--62

6 cm2 cooling area4)--40

Electrical characteristics, at Tj=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltageV(BR)DSSVGS=0 V, ID= 1 mA

55--V

Gate threshold voltageVGS(th)VDS=VGS, ID=150 µA1.21.62.2

Zero gate voltage drain currentIDSSVDS=55 V, VGS=0 V, Tj=25 °C-0.011µAVDS=55 V, VGS=0 V,

Tj=125 °C

2)

-1100

Gate-source leakage currentIGSSVGS=16 V, VDS=0 V-1100nADrain-source on-state resistanceRDS(on)VGS=5 V, ID=59 A

-4.96.2mΩ

VGS=5 V, ID=59 A,

SMD version-4.65.9

VGS=10 V, ID=80 A

-3.13.8

VGS=10 V, ID=80 A,

SMD version-2.83.5

Values

Rev. 1.1page 22007-11-07元器件交易网www.cecb2b.com IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-04

ParameterSymbolConditionsUnitmin.typ.max.

Dynamic characteristics2)Input capacitanceCiss-17270-pFOutput capacitanceCoss-2165-

Reverse transfer capacitanceCrss-2070-

Turn-on delay timetd(on)-30-ns

Rise timetr-58-

Turn-off delay timetd(off)-82-

Fall timetf-55-

Gate Charge Characteristics2)Gate to source chargeQgs-71-nCGate to drain chargeQgd-45-

Gate charge totalQg-241362

Gate plateau voltageVplateau-3.8-V

Reverse DiodeDiode continous forward current2)I

S--100A

Diode pulse current2)I

S,pulse--400

Diode forward voltageVSDVGS=0 V, IF=80 A, Tj=25 °C0.60.91.3VReverse recovery time2)t

rr-95-ns

Reverse recovery charge2)Q

rr-135-nC

2) Defined by design. Not subject to production test.

3) Qualified at -5V and +16V.

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an RthJC = 0.7 K/W the chip is able to carry 176 A at 25°C. For detailed

information see Application Note ANPS071E

TC=25 °C

ValuesVGS=0 V, VDS=25 V,

f=1 MHz

VDD=27.5 V,

VGS=10 V, ID=80 A,

RG=2 Ω

VDD=11 V, ID=80 A, VGS=0 to 10 V

VR=27.5 V, IF=IS,

diF/dt=100 A/µs

Rev. 1.1page 32007-11-07

元器件交易网www.cecb2b.com IPB100N06S3L-04IPI100N06S3L-04, IPP100N06S3L-041 Power dissipation2 Drain currentPtot=f(TC); VGS ≥ 4 VID=f(TC); VGS ≥ 4 V

3 Safe operating area4 Max. transient thermal impedanceID=f(VDS); TC=25 °C; D=0ZthJC=f(tp)

parameter: tpparameter: D=tp/T

1 µs10 µs

100 µs1 ms

110100

1000

0.1110100VDS [V]

ID [A]single pulse0.010.050.10.510010-110-210-310-410-510-610010-110-210-3tp [s]ZthJC [K/W]

050100150200250050100150200TC [°C]Ptot [W]020406080100120050100150200TC [°C]

ID [A]

Rev. 1.1page 42007-11-07

元器件交易网www.cecb2b.com

合集下载

sn04-n接近开关中文资料

sn04-n接近开关中文资料

SN04-N 翔京联合接近开关中文资料产品图片Photo尺寸图 Dimension drawing特点描述 Feature Description型号规格 Item Code◆ 采用非接触式检测方式,响应快、频率高◆ 逆极性,浪涌,过载,短路保护◆ 外壳材料：PBT◆ 防护等级IP67（IEC ）DC2线NO SN04-D1DC2线NC SN04-D2 NPN NOSN04-N NPN NCSN04-N2 NPN NO+NC —— PNP NO SN04-P PNP NC SN04-2 PNP NO+NC —— AC 2 线 NO SN04-Y1AC 2 线 NCSN04-Y2电气接线图 Connection diagram规格参数 Specification安装方式 埋入式 非埋式检测距离5mm 8mm电源电压10…30VDC外形规格18*18*35输出方式NPN/PNP NO/NC开关点偏移≤±10%迟滞范围1…20%重复误差≤3%负荷电流≤200mA残留电压≤2.5V消耗电流≤10mA保护回路浪涌,过载,短路,逆极性保护输出指示黄色LED环境温度-25…70℃环境湿度35-95%开关频率800 Hz 500 Hz 防护等IP67外壳材PBT料2米PVC电缆接线方式。

100-006-000;100-008-000;100-008-001;100-010-000;100-014-000;中文规格书,Datasheet资料

100-006-000;100-008-000;100-008-001;100-010-000;100-014-000;中文规格书,Datasheet资料

3M™ DIP Socket
Screw Machine
• Accepts various DIP packages • Reliable four finger contact interface • Unique body design prevents air voids during soldering • Inner contact aligned to maximize contact surface area • Optional seal tape for closed-body configuration • See Regulatory Information Appendix (RIA) for chemical compliance information
U
ED
TS-2115-D Sheet 1 of 2
3M is a trademark of 3M Company. For technical, sales or ordering information call 800-225-5373
3M™ DIP Socket
Screw Machine
Contact Quantity 6 8 10 14 Inch [mm] Tolerance Unless Noted .0 inch ±.1 .00 ±.01 .000 ±.005 16 18 20 22 24 24 24 28 28 32 40 42 48 64 Description 100-006-0XX 100-008-0XX 100-010-0XX 100-014-0XX 100-016-0XX 100-018-0XX 100-020-0XX 100-022-0XX 130-024-0XX 110-024-0XX 100-024-0XX 130-028-0XX 100-028-0XX 100-032-0XX 100-040-0XX 100-042-0XX 100-048-0XX 100-064-0XX Dim A .300 [7.62] .400[10.16] .500 [12.70] .700 [17.78] .800 [20.32] .900 [22.86] 1.000 [25.40] 1.100 [27.94] 1.200 [30.48] 1.200 [30.48] 1.200 [30.48] 1.400 [35.56] 1.400 [35.56] 1.600 [40.64] 2.000 [50.80] 2.100 [53.34] 2.400 [60.96] 3.200 [81.28] Dim B .400 [10.16] .400 [10.16] .400 [10.16] .400 [10.16] .400 [10.16] .400 [10.16] .400 [10.16] .500 [12.70] .400 [10.16] .500 [12.70] .700 [17.78] .400 [10.16] .700 [17.78] .700 [17.78] .700 [17.78] .700 [17.78] .700 [17.78] 1.00 [25.40] Dim C .200 [5.08] .300 [7.62] .400 [10.16] .600 [15.24] .700 [17.78] .800 [20.32] .900 [22.86] 1.000 [25.4] 1.100 [27.94] 1.100 [27.94] 1.100 [27.94] 1.300 [33.02] 1.300 [33.02] 1.500 [38.10] 1.900 [48.26] 2.000 [50.80] 2.300 [58.42] 3.100 [78.74]
SII100N12中文资料

SII100N12中文资料


T yp. c apac itanc es
C = f (V C E )
parameter: V G E = 0 V , f = 1 MHz
10 2
C
10 1
C is s
C os s C rs s
5
10
15
20
25
30
QGate
V VCE
40
R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 150°C parameter: V G E = 15 V
60 mWs 50
T yp. s witc hing los s es E = f (R G ) , inductive load , T j = 125°C par.: V C E = 600V , V G E = ± 15 V , I C = 100 A
40
E on E
mWs
E on
E
45 40
150 A 130 IC 120 110 100 90 80 70 60 50 40 30 20 10 0 0
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
K/W ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
NPT IGBT Modules
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
750 W 650 Ptot 600 550
6MBP100RA120中文资料

6MBP100RA120中文资料


Input signal threshold voltage (on/off)
Vin(th)
Condition fsw=0 to 15kHz Tc=-20 to 100°C *7 fsw=0 to 15kHz Tc=-20 to 100°C *7 ON OFF
Input zener voltage
Over heating protection temperature level
200
800
0 1200
-
100
-
200
-
100
-
735
-
150
0
20
0
Vz
-
1
0
Vcc
-
15
-40
125
-20
100
- AC2.5
- 3.5 *6
- 3.5 *6
Unit
V V V V A A A W °C V V mA V mA °C °C kV N·m N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N·m
U nder voltage : VU V T (V)