2N5109

SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-PNP SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-NPN SI-PNP N-FET P-FET N-FET N-FET SI-NPN SI-NPN SI-PNP P-FET N-FET SI-PNP N-FET SI-NPN SI-PNP SI-PNP SI-PNP N-FET SI-PNP SI-NPN SI-NPN SI-PNP N-FET SI-NPN SI-NPN N-FET N-FET N-FET N-FET SI-NPN SI-PNP N-FET
0,05 A 2:00 0,25 A 0,2 A 1:00 0,03 A 0,03 A 10:00 0,5 A 4:00 4:00 0,05 A 4:00 30 A 20 A 16 A 10:00 20 mA 15 mA 2,5 mA 10 mA 0,4 A 0,2 A 0,2 A 10 mA 5 mA 0,2 A 50 mA 1:00 1:00 1:00 200 mA 0,2 A 3:00 0,05 A 0,1 A 0,2 A 0,5 mA 5:00 10:00 30 mA 50 mA 25 mA 5 mA 0,6 A 0,6 A 15 mA
40 V 40 V 80 V 80 V 80 V 150 V 55 V 40 V 30 V 100 V 20 V 80 V 375 V 80 V 40 V 100 V 100 V 160 V 350 V 25 V 25 V 25 V 40 V 40 V 40 V 25 V 25 V 180 V 36 V 30 V 150 V 120 V 120 V 80 V 80 V 30 V 15 V 80 V 80 V 60 V 80 V 80 V 140 V 60 V 100 V 36 V 70 V

BFR96DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used inapplications requiring fast switching times.ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)SymbolParameterValueUnit V CEO Collector-Emitter Voltage 15Vdc V CBO Collector-Base Voltage 20Vdc V EBO Emitter-Base Voltage 3.0Vdc I CCollector Current100mAThermal DataPDTotal Device Dissipation @ TC = 100ºC Derate above 100ºC50010mWatts mW/ ºCMacro T(STYLE #2)Features• High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA • Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz • High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855RF & MICROWAVE DISCRETE LOW POWER TRANSISTORSSTATIC(off)Symbol Test Conditions ValueMin.Typ.Max.Unit BVCEO Collector-Emitter Breakdown Voltage(IC = 1.0 mAdc, IB = 0)15--Vdc BVCB0Collector-Base Breakdown Voltage(IC = 0.1 mAdc, IE = 0)20--Vdc BVEBO Emitter-Base Breakdown Voltage(IE = 0.1 mAdc, IC = 0) 3.0--Vdc ICBO Collector Cutoff Current(VCB = 10 Vdc, VBE = 0 Vdc)--100nA (on)HFE DC Current Gain(IC = 50 mAdc, VCE = 10 Vdc)30-200-DYNAMICSymbol Test Conditions ValueMin.Typ.Max.Unit Ftau Current-Gain – Bandwidth Product(IC = 50 mA, VCE = 10 Vdc, f = 0.5 GHz)- 5.0-GHz CCB Output Capacitance(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)- 2.6 3.2pFBFR96 FUNCTIONALSymbol Test Conditions ValueMin.Typ.Max.UnitNF Noise Figure(IC = 10 mAdc, VCE = 10 Vdc, f = 0.5 GHz)- 2.0-dB|S21|2Insertion Gain(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)1213-dBMSG Maximum Stable Gain(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)-16.5-dBGU max Maximum Unilateral Gain (1)(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)-14.5-dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mAf S11S21S12S22 (MHz)|S11|∠ φ|S21|∠ φ|S12|∠ φ|S22|∠ φ1000.388-130211120.029660.416-54 2000.422-15811940.046890.277-71 3000.432-1687.5860.064720.229-79 5000.447178 4.6750.103750.224-92 7000.454170 3.4650.144740.246-100 8000.4621673610.165740.26-103 10000.479159 2.5530.212720.284-112 15000.470138 1.8320.333660.375-134BFR96RF Low Power, PA, LNA, & General Purpose Selector Guide.Low Cost Plastic Package TypesMacro T Macro X Power Macro SO-8E f f i c i e n c y (%)G P E F r e q (M H z )(M H z )F r e q (M H z )G u M a x (d B )I C m a x (m A )P a c k a g eD e v i c eI C m a x (m A )(m A )RF (Low Power PA / General Purpose) Selection GuideP o u t (w a t t s )(W a t t s )G P E (d B )(d B )G P E V C CB VC E OP a c k a g eD e v i c eT y p eN F (d B )N F I C (m A )N F V C EG N (d B )F t a u (M H z )C c b (p F )B VC E ORF (LNA / General Purpose) Selection GuideBFR96。

60V 115V 180V 150V 35V 400V 20V 120V 200V 50V 150V 150V 120V 15V 180V 180V 180V 200V 50V 160V 180V 120V 160V 160V 140V 130V 50V 35V 60V 180V 100V 60V 120V
25A 16A 12A 12A 5A 10A 10A 7A 4A 2A 2A 15A 20A 20A 7A 20A 2A 0.5A 4A 15A 15A 0.5A 0.5A 15A 1A 16A 2A 2A 15A 15A 2A 2A 2A
2N6728 2N697 2N7002 2N914 2N918 2SA1006B 2SA1009 2SA1011 2SA1013 2SA1015 2SA1016 2SA1017 2SA1018 2SA1020 2SA1027 2SA1029 2SA1034 2SA1037 2SA1048 2SA1049 2SA1061 2SA1062 2SA1065 2SA1084 2SA1103 2SA1106 2SA1110 2SA1111 2SA1112 2SA1115 2SA1120 2SA1123 2SA1124
2N5116 2N5154 2N5179 2N5192 2N5240 2N5298 2N5308 2N5320 2N5322 2N5401 2N5416 2N5433 2N5457 2N5458 2N5460 2N5461 2N5462 2N5484 2N5485 2N5551 2N5589 2N5639 2N5672 2N5680 2N5682 2N5684 2N5686 2N5770 2N5771 2N5876 2N5878 2N5879 2N5884
2N5886 2N6031 2N6050 2N6059 2N6083 2N6098 2N6099 2N6109 2N6124 2N6211 2N6213 2N6248 2N6284 2N6287 2N6292 2N6356 2N6422 2N6427 2N6476 2N6488 2N6491 2N6517 2N6520 2N6547 2N6556 2N6609 2N6660 2N6661 2N6675 2N6678 2N6716 2N6718 2N6725

FUJI微波低噪声管 FUJITSU微波功率管 FUJI微波功率管 FUJITSU微波功率管 FUJITSU微波功率管 HP微波混频管 FUJITSU微波功率管 HPPIN二极管 HPPIN二极管 HP肖特基二极管 900MHZ,20dBm,SOT143 1.9GHZ,33dBm,SOT89 MA微波变容管 MINI微波低噪声管 MINI微波低噪声管 1.65GHZ,3.75W,MIT 1.65GHZ,12W,MIT 2.3GHZ,23W,MIT 2.3GHZ,37.5W,MIT 8GHZ,1.2W,MIT 8GHZ,1.2W,MIT 14.5GHZ,1.5W,MIT 14.5GHZ,2.5W,MIT 14.5GHZ,10W,MIT 12GHZ,42.8W,MIT 20V,80mA,8GHZ 20V,0.1A,8GHZ 发射管175M,15W,2.5A 发射管175M,30W,5A 发射管,225M300W 发射管,150M30W 发射管175M,300W,40A 发射管,225M125W 发射管175M,40W,6A 发射管175M,40W,8A 发射管175M,75W,20A 发射管200M,270W,12A 发射管400M,30W,3.4A 发射管400M,80W,9A 发射管400M,100W 发射管400M,125W,16A 发射管175M,25W,6A 发射管520M,1W 发射管520M,7W 发射管512M,1.5W,0.4A 发射管870M,1.5W 功率管870M,0.5W 8G,0.07A,20V,微波低噪声管 发射管8GHZ,0.5W 8G,0.07A,20V,微波低噪声管 发射管520M,0.6W,0.2A,? 4.5G10W,CCTV,0.2A 发射管470M,3W,1A 发射管470M,25W,4A