AD408M96VSB-5中文资料
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Rev.1Page 1
ASCENDSemiconductor4Mx4 EDOData sheet
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AD 40 4M 4 2 V S A – 5AscendSemiconductor
EDO/FPM: 40D-RAMBUS: 41
DDRSDRAM: 42DDRSGRAM: 43SGRAM : 46SDRAM : 48
Density16M : 16 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit
PackageOrganization 4: x4 8 : x8 9 : x9 16 : x16 18 : x18 32 : x32
Revision A : 1st B : 2nd C : 3rd D :4th
Min Cycle Time ( Max Freq.) -5 : 5ns ( 200MHz ) -6 : 6ns ( 167MHz ) -7 : 7ns ( 143MHz ) -75 : 7.5ns ( 133MHz ) -8 : 8ns ( 125MHz ) -10 : 10ns ( 100MHz )
EDO : -5 (50 ns) -6 (60 ns)
Interface V: 3.3V R: 2.5V
C: CSP B: uBGAT: TSOP Q: TQFPP: PQFP ( QFP )L: LQFP S: SOJ
Refresh 1 : 1K 8 : 8K
2 : 2K 6 :16K 4 : 4K
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DescriptionThe device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup, portable elec-tronic application. lt is packaged in JEDEC standard 26/24-pin plastic SOJ or TSOP(II).
Features• Single 3.3V(%) only power supply• High speed tRAC acess time: 50/60ns• Low power dissipation - Active mode : 432/396 mW (Mas) - Standby mode: 0.54 mW (Mas)• Extended - data - out(EDO) page mode access• I/O level: CMOS level (Vcc = 3.3V)• 2048 refresh cycle in 32 ms(Std.) or 128 ms(S-version)• 4 refresh modesh: - RAS only refresh - CAS - before - RAS refresh- Hidden refresh- Self-refresh(S-version)10±
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Pin Name FunctionA0-A10Address inputs- Row address - Column address - Refresh address DQ1~DQ4Data-in / data-outRASRow address strobeCASColumn address strobeWEWrite enableOEOutput enableVccPower (+ 3.3V)VssGroundVCC1DQ12DQ23DQ34DQ45VCC6891011 NC12 WE13 A0 A117 A218 A319VSSRASCASOEA8A7A6A5A4VSSAD404M42VSPin DescriptionPin Configuration 21222324 2526151416 A1026/24-PIN 300mil Plastic SOJA9VCC1DQ12DQ23DQ34DQ45VCC6891011 NC12 WE13 A0 A117 A218 A319VSSRASCASOEA8A7 A6A5 A4VSSAD404M42VT212223242526151416 A1026/24-PIN 300mil Plastic TSOP (ll)A9A0-A10A0-A10A0-A10
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WE CAS
NO. 2 CLOCKGENERATOR
COLUMNADDRESSBUFFERS (11)
REFRESHCONTROLLER
REFRESHCOUNTER
BUFFERS (11)ADDRESSROW
NO. 1 CLOCKGENERATOR
A0RASA1A2A3A4A5A6A7A8
CONTROLLOGICDATA-IN BUFFER
DATA-OUTBUFFEROE
DQ1.
DQ4.
COLUMNDECODER
2048SENSE AMPLIFIERSI/O GATING
2048x4
2048x2048x4MEMORYARRAY2
0
48
ROW
DECOD
E
R
VccVss
Block DiagramA9A10
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TRUTH TABLE
Notes: 1. EARLY WRITE only.FUNCTIONRASCASWEOEADDRESSESDQSNotesROWCOL
STANDBYHXXXXHigh-ZREADLLHLROWCOLData-OutWRITE: (EARLY WRITE )LLLXROWCOLData-lnREAD WRITELLROWCOLData-Out,Data-lnEDO-PAGE-MODE READ1st CycleLHLROWCOLData-Out2nd CycleLHLn/aCOLData-OutEDO-PAGEMODE WRITE1st CycleLLXROWCOLData-In2nd CycleLLXn/aCOLData-InEDO- PAGE-MODE READ-WRITE1st CycleLROWCOLData-Out, Data-In2nd CycleLn/aCOLData-Out, Data-InHIDDENREFRESHREADLHLROWCOLData-OutWRITELLXROWCOLData-In1RAS-ONLY REFRESHLHXXROWn/aHigh-ZCBR REFRESHLHXXXHigh-Z
HX→HL→LH→HL→HL→HL→HL→HL→HL→LH→
HL→HL→LH→
LHL→→LHL→→
HL→
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Absolute Maximum Ratings
Recommended DC Operating ConditionsCapacitanceTa = 25°C, VCC = 3.3V %, f = 1MHzNote: 1. Capacitance measured with effective capacitance measuring method. 2. RAS, CAS = VIH to disable Dout. ParameterSymbolValueUnitVoltage on any pin relative to Vss VT-0.5 to + 4.6VSupply voltage relative to Vss VCC-0.5 to + 4.6VShort circuit output currentIOUT50mAPower dissipationPD1.0WOperating temperatureTOPT0 to + 70°CStorage temperatureTSTG-55 to + 125°CParameter/ConditionSymbol3.3 Volt VersionUnitMinTypMaxSupply VoltageVCC3.03.33.6VInput High Voltage, all inputsVIH2.0-VCC + 0.3VInput Low Voltage, all inputsVIL-0.3-0.8VParameterSymbolTypMaxUnitNoteInput capacitance (Address)CI1 -5pF1Input capacitance (RAS, CAS, OE, WE)CI2-7pF1Output capacitance(Data-in, Data-out)CI/O-7pF1, 210±
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