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BCW68H中文资料

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Features l Ideally Suited for Automatic Insertion

l 150oC Junction Temperature

l Low Current, Low Frequency

l Epitaxial Planar Die Construction

Mechanical Data

l Case: SOT-23, Molded Plastic

l Terminals: Solderable per MIL-STD-202, Method 208

l Marking: DH

l Weight: 0.008 grams ( approx.)

Maximum Ratings @ 25oC Unless Otherwise Specified

Charateristic Symbol Value Unit

Collector-Emitter Voltage VCEO -45 V

Collector-Base Voltage VCBO -60 V

Emitter-Base Voltage VEBO -5 V

Collector Current(DC) IC -800 mA

Peak Collector Current ICM -1000 mA

Base Current(DC) IB -100 mA

Peak Base Current IBM -200 mA

Power Dissipation@Ts=79oC Pd 330 mW

Thermal Resistance, Junction to

Ambient Air 285(1) oC/W

Thermal Resistance, Junction to

Soldering Point 215oC/W

Operating & Storage Temperature Tj, TSTG-55~150oC

Notes:

(1) Valid provided that leads are kept at

ambient temperature. BCW68H

PNP Small

Signal Transistor

330mW

RθJA

RθJS

Suggested Solder

Pad LayoutDIMENSIONS

INCHES

MMDIMMINMAXMINMAXNOTEA.110.1202.803.04B.083.0982.102.64C.047.0551.201.40D.035.041.891.03E.070.0811.782.05F.018.024.45.60G.0005.0039.013.100H.035.044.891.12J.003.007.085.180K.015.020.37.51

.0792.000inchesmm.031.800

.035.900

.037.950.037.950KA

BCD

EF

GHJSOT-23

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$󰀊%󰀝󰀆󰀆󰀆󰀞󰀟󰀏󰀟 󰀆!󰀐󰀏"#󰀙󰀚󰀙MCC元器件交易网www.cecb2b.comElectrical Characteristics (TA= 25°C unless otherwise noted)

SymbolMin.TYP.Max.Unit

DC Current Gain(1)

at VCE = 1V, I

C = 10mA hFE 180

at VCE = 2V, IC = 100mA hFE 250 630

at VCE = 2V, IC = 500mA hFE 100

Collector-Emitter Saturation Voltage(1)

at IC = 100mA, IB = 10mAVCEsat––0.3V

at IC = 500mA, IB = 50mA VCEsat ––1.0 V

Base-Emitter Saturation Voltage(1)

at IC = 100mA, IB = 10mAVBEsat––1.25V

at IC = 500mA, IB = 50mAVBEsat––2V

Collector-Emitter Breakdown Voltage

at IC = 10mA, IB = 0V(BR)CEO45––V

Collector-Base Breakdown Voltage

at IC = 10µA, IB = 0V(BR)CBO60––V

Emitter-Base Breakdown Voltage

at IE = 10µA, at IC = 0V(BR)EBO5––V

Collector-Base Cut-off Current

at VCB= 45V, IE = 0ICBO––20nA

at VCB= 45V, IE = 0, TA= 150°CICBO––20µA

Emitter-Base Cut-off Current

at VEB= 4V, IC = 0IEBO––20nA

Gain-Bandwidth Product

at VCE = 10V, IC = 20mA, f = 100MHZ fT – 100 – MHz

Collector-Base Capacitance

at VCB = 10V, f= 1MHzCCB–6–pF

Emitter-Base Capacitance

at VEB = 0.5V, f= 1MHzCEB–60–pF

Note:(1) Pulse test: t ≤300µs, D = 2%

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