MOSFET3400

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
KD3400
Description
The KD3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device. The KD3400 is universally used for all commercial-industrial applications.
Features
*
Lower Gate Charge BVDSS 30 V
* Small Package Outline R
DS(ON)
28 mΩ

* RoHS Compliant I
D
5.8 A

Package Dimensions

Package:SOT-23-3L(SC-59)
Absolute Maximum Ratings
Parameter SymbolRatingsUnit
Drain-Source Voltage
V
DS

30

V

Gate-Source Voltage
V
GS

+/- 12

V

Continuous Drain Current
3
ID@TA=25℃
5.8

A

Continuous Drain Current
3
ID@TA=70℃
4.9

A

Pulsed Drain Current
1
I

DM

30

A

Power Dissipation
PD @TA=25℃
1.38

W

Linear Derating Factor
0.01
W
/℃

operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150

Thermal Data
Parameter Symbol ValueUnit
Thermal Resistance Junction-ambient3 Max.
Rthj-amb 90

/W

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
KD3400
Electrical Characteristics (Tj = 25℃ unless otherwise specified)

Source-Drain Diode
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in
2
copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
KD3400
Characteristics Curve
Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics

Fig 3. On-Resistance v.s. Drain Fig 4. On-Resistance v.s. Junction
Current and Gate Voltage Temperature

Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
KD3400
Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Power Rating
Junction-to-Ambient

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Normalized Maximum Transient Thermal Impedance

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