ST2N5087中文资料

1A Microsemi Company580 Pleasant St.Phone: 617-924-9280Watertown, MA 02172 Fax: 617-924-1235DIE SPECIFICATIONSWITCHING TRANSISTOR NPN SILICONFEATURES:n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .3V @ IC = 150 mAdcSymbol ParameterLimit Unit Vceo Collector-Emitter Voltage50Vdc Vcbo Collector-Base Voltage 75Vdc Vebo Emitter-Base Voltage6.0Vdc IcCollector Current- Continuous 800mAdc Tj, TstgOperating Junction & Storage -65 to +200°CTemperature RangeSertech reserves the right to make changes to any product design, specification, or other information at any time without prior notice.Data Sheet, Die, 2N2222A MSW Rev. - 4/15/98Symbol Parameter Conditions Min Max UnitOFF CHARACTERISTICSV(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc75Vdc V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc6Vdc V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed50Vdc ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc50nAdc ICBO1Collector to Base Cutoff Current Bias Cond. D, VCB=60Vdc10nAdc IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc10nAdc ON CHARACTERISTICShFE1Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc50hFE2Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc75325hFE3Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc100hFE4Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed100300hFE5Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed30VCE(sat)1Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed0.3Vdc VCE(sat)2Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed1Vdc VBE(sat)1Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed0.6 1.2Vdc VBE(sat)2Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed2Vdc SMALL SIGNAL CHARACTERISTICShfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz50/hfe/Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2.5 Current Transfer RatioCobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz8pF Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz25pF SWITCHING CHARACTERISTICSton Saturated Turn-on Time As defined in 19500/255 Figure 845nS toff Saturated Turn-off Time As defined in 19500/255 Figure 9300nS2。

1/17January 2004s VERY LOW DROPOUT VOLTAGE (0.4V)sVERY LOW QUIESCENT CURRENT (TYP .50µA IN OFF MODE,500µA IN ON MODE)s OUTPUT CURRENT UP TO 500mA sLOGIC-CONTROLLED ELECTRONIC SHUTDOWNsOUTPUT VOLTAGES OF 1.25;1.5;2.5;2.7;3;3.3;3.5;4;4.5;4.7;5;5.2;5.5;6;8;8.5;12Vs INTERNAL CURRENT AND THERMAL LIMIT s ONLY 2.2µF FOR STABILITYs AVAILABLE IN ±2%ACCURACY AT 25°C sSUPPLY VOLTAGE REJECTION:70db (TYP .)sTEMPERATURE RANGE:-40TO 125°CDESCRIPTIONThe KF00series are very Low Drop regulators availablein SO-8package and in a wide range of output voltages.The very Low Drop voltage (0.4V)and the very low quiescent current make them particularlysuitable for Low Noise,Low Power applications and specially in battery powered systems.A Shutdown Logic Control function is available (pin 5,TTL compatible).This means that when the device is used as a local regulator,it is possible to put a part of the board in standby,decreasing the total power consumption.It requires only a 2.2µF capacitor for stability allowing space and cost saving.KF00SERIESVERY LOW DROPVOLTAGE REGULATORS WITHINHIBITKF002/17ABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these condition is not implied.THERMAL DATACONNECTION DIAGRAM (top view)ORDERING CODES(*)Available on request.(#)Available in Tape &Reel with the suffix "-TR".Symbol ParameterValue Unit V I DC Input Voltage -0.5to 20VI O Output Current Internally Limited P tot Power DissipationInternally LimitedT stg Storage Temperature Range-40to 150°C T opOperating Junction Temperature Range-40to 125°C Symbol ParameterDPAK SO-8Unit R thj-caseThermal Resistance Junction-case820°C/WTYPE SO-8(#)DPAK(#)OUTPUT VOLTAGEKF12(*)KF12BD KF12BDT 1.25V KF15KF15BD KF15BDT 1.5V KF25KF25BD KF25BDT 2.5V KF27KF27BD KF27BDT 2.7V KF30KF30BD KF30BDT 3V KF33KF33BD KF33BDT 3.3V KF35KF35BD KF35BDT 3.5V KF40KF40BD KF40BDT 4V KF45(*)KF45BD KF45BDT 4.5V KF47KF47BD KF47BDT 4.75V KF50KF50BD KF50BDT 5V KF52KF52BD KF52BDT 5.2V KF55(*)KF55BD KF55BDT 5.5V KF60KF60BD KF60BDT 6V KF80KF80BD KF80BDT 8V KF85KF85BD KF85BDT 8.5V KF120KF120BDKF120BDT12VKF003/17TEST CIRCUITSELECTRICAL CHARACTERISTICS FOR KF12(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =3.3V1.225 1.251.275VI O =50mA,V I =3.3V,T a =-25to 85°C 1.2 1.3V I Operating Input Voltage I O =500mA2.520V I O Output Current Limit 1A ∆V O Line Regulation V I =2.5to 20V,I O =5mA 212mV ∆V O Load Regulation V I =2.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =2.5to 20V,I O =0mA (ON MODE)0.51mA V I =2.6to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =3.5±1V f =120Hz 82dBf =1KHz 77f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 1.25V V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF004/17ELECTRICAL CHARACTERISTICS FOR KF15(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF25(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =3.5V1.47 1.51.53VI O =50mA,V I =3.5V,T a =-25to 85°C 1.44 1.56V I Operating Input Voltage I O =500mA2.520V I O Output Current Limit 1A ∆V O Line Regulation V I =2.5to 20V,I O =5mA 212mV ∆V O Load Regulation V I =2.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =2.5to 20V,I O =0mA (ON MODE)0.51mA V I =2.8to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =3.5±1V f =120Hz 82dBf =1KHz 77f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 1V V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =4.5V2.45 2.52.55VI O =50mA,V I =4.5V,T a =-25to 85°C 2.42.6V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =3.5to 20V,I O =5mA 212mV ∆V O Load Regulation V I =3.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =3.5to 20V,I O =0mA (ON MODE)0.51mA V I =3.8to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =4.5±1V f =120Hz 82dBf =1KHz 77f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF005/17ELECTRICAL CHARACTERISTICS FOR KF27(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF30(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =4.7V2.646 2.72.754VI O =50mA,V I =4.7V,T a =-25to 85°C 2.5922.808V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =3.7to 20V,I O =5mA 212mV ∆V O Load Regulation V I =4V,I O =5to 500mA250mV I dQuiescent CurrentV I =3.7to 20V,I O =0mA(ON MODE)0.51mA V I =4to 20V,I O =500mA12V I =6V(OFF MODE)50100µA SVRSupply Voltage RejectionI O =5mA V I =4.7±1V f =120Hz 82dBf =1KHz 77f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V dDropout VoltageI O =200mA 0.20.35V I O =500mA0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =5V2.9433.06VI O =50mA,V I =5V,T a =-25to 85°C 2.883.12V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =4to 20V,I O =5mA 212mV ∆V O Load Regulation V I =4.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =4to 20V,I O =0mA (ON MODE)0.51mA V I =4.3to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =5±1Vf =120Hz 81dBf =1KHz 76f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF006/17ELECTRICAL CHARACTERISTICS FOR KF33(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF35(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =5.3V3.234 3.33.366VI O =50mA,V I =5.3V,T a =-25to 85°C 3.1683.432V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =4.3to 20V,I O =5mA 212mV ∆V O Load Regulation V I =4.6V,I O =5to 500mA250mV I dQuiescent CurrentV I =4.3to 20V,I O =0mA (ON MODE)0.51mA V I =4.6to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =5.3±1V f =120Hz 80dBf =1KHz 75f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =5.5V3.43 3.53.57VI O =50mA,V I =5.5V,T a =-25to 85°C 3.363.64V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =4.5to 20V,I O =5mA 212mV ∆V O Load Regulation V I =4.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =4.5to 20V,I O =0mA (ON MODE)0.51mA V I =4.8to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =5.5±1V f =120Hz 79dBf =1KHz 74f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C O Output Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF007/17ELECTRICAL CHARACTERISTICS FOR KF40(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF45(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =6V3.9244.08VI O =50mA,V I =6V,T a =-25to 85°C 3.844.16V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =5to 20V,I O =5mA 318mV ∆V O Load Regulation V I =5.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =5to 20V,I O =0mA (ON MODE)0.51mA V I =5.3to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =6±1Vf =120Hz 78dBf =1KHz 73f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =6.5V4.41 4.54.59VI O =50mA,V I =6.5V,T a =-25to 85°C 4.324.68V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =5.5to 20V,I O =5mA 318mV ∆V O Load Regulation V I =5.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =5.5to 20V,I O =0mA (ON MODE)0.51mA V I =5.8to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =6.5±1V f =120Hz 77dBf =1KHz 72f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF008/17ELECTRICAL CHARACTERISTICS FOR KF47(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF50(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =6.7V4.606 4.74.794VI O =50mA,V I =6.7V,T a =-25to 85°C 4.5124.888V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =5.7to 20V,I O =5mA 318mV ∆V O Load Regulation V I =6V,I O =5to 500mA250mV I dQuiescent CurrentV I =5.7to 20V,I O =0mA (ON MODE)0.51mA V I =6to 20V,I O =500mA 12V I =6V (OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =6.7±1V f =120Hz 77dBf =1KHz 72f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =7V4.955.1VI O =50mA,V I =7V,T a =-25to 85°C 4.85.2V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =6to 20V,I O =5mA 318mV ∆V O Load Regulation V I =6.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =6to 20V,I O =0mA (ON MODE)0.51mA V I =6.3to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =7±1Vf =120Hz 76dBf =1KHz 71f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C O Output Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF009/17ELECTRICAL CHARACTERISTICS FOR KF52(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF55(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =7.2V5.096 5.25.304VI O =50mA,V I =7.2V,T a =-25to 85°C 4.9925.408V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =6.2to 20V,I O =5mA 318mV ∆V O Load Regulation V I =6.5V,I O =5to 500mA250mV I dQuiescent CurrentV I =6.2to 20V,I O =0mA (ON MODE)0.51mA V I =6.5to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =7.2±1V f =120Hz 76dBf =1KHz 71f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =7.5V5.39 5.55.61VI O =50mA,V I =7.5V,T a =-25to 85°C 5.285.72V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =6.5to 20V,I O =5mA 318mV ∆V O Load Regulation V I =6.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =6.5to 20V,I O =0mA (ON MODE)0.51mA V I =6.8to 20V,I O =500mA 12V I =6V(OFF MODE)50100µA SVR Supply Voltage RejectionI O =5mA V I =7.5±1V f =120Hz 76dBf =1KHz 71f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =6V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFKF0010/17ELECTRICAL CHARACTERISTICS FOR KF60(refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF80B (refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =8V5.8866.12VI O =50mA,V I =8V,T a =-25to 85°C 5.766.24V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =7to 20V,I O =5mA 424mV ∆V O Load Regulation V I =7.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =7to 20V,I O =0mA (ON MODE)0.7 1.5mA V I =7.3to 20V,I O =500mA 12V I =9V(OFF MODE)70140µA SVR Supply Voltage RejectionI O =5mA V I =8±1Vf =120Hz 75dBf =1KHz 70f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =9V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =10V7.8488.16VI O =50mA,V I =10V,T a =-25to 85°C 7.688.32V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =9to 20V,I O =5mA 424mV ∆V O Load Regulation V I =9.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =9to 20V,I O =0mA(ON MODE)0.7 1.5mA V I =9.3to 20V,I O =500mA 12V I =9V (OFF MODE)70140µA SVRSupply Voltage RejectionI O =5mA V I =10±1V f =120Hz 72dBf =1KHz 67f =10KHz60eN Output Noise Voltage B =10Hz to 100KHz 50µV V dDropout VoltageI O =200mA 0.20.35V I O =500mA0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =9V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µF11/17ELECTRICAL CHARACTERISTICS FOR KF85B (refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)ELECTRICAL CHARACTERISTICS FOR KF120B (refer to the test circuits,T j =25°C,C I =0.1µF,C O =2.2µF unless otherwise specified.)Symbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =10.5V8.338.58.67VI O =50mA,V I =10.5V,T a =-25to 85°C 8.168.84V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =9.5to 20V,I O =5mA 424mV ∆V O Load Regulation V I =9.8V,I O =5to 500mA250mV I dQuiescent CurrentV I =9.5to 20V,I O =0mA (ON MODE)0.7 1.5mA V I =9.8to 20V,I O =500mA 12V I =10V(OFF MODE)70140µA SVR Supply Voltage RejectionI O =5mAV I =10.5±1V f =120Hz 67dBf =1KHz 63f =10KHz53eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =10V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFSymbol ParameterTest ConditionsMin.Typ.Max.Unit V O Output Voltage I O =50mA,V I =14V11.761212.24VI O =50mA,V I =14V,T a =-25to 85°C 11.5212.48V I Operating Input Voltage I O =500mA20V I O Output Current Limit 1A ∆V O Line Regulation V I =13to 20V,I O =5mA 848mV ∆V O Load Regulation V I =13.3V,I O =5to 500mA250mV I dQuiescent CurrentV I =13to 20V,I O =0mA (ON MODE)0.7 1.5mA V I =13.3to 20V,I O =500mA 12V I =13V(OFF MODE)70140µA SVR Supply Voltage RejectionI O =5mA V I =14±1V f =120Hz 69dBf =1KHz 64f =10KHz54eN Output Noise Voltage B =10Hz to 100KHz 50µV V d Dropout Voltage I O =200mA 0.20.35V I O =500mA 0.40.7V IL Control Input Logic Low T a =-40to 125°C 0.8V V IH Control Input Logic High T a =-40to 125°C 2V I I Control Input CurrentV I =13V,V C =6V10µA C OOutput Bypass Capacitance ESR =0.1to 10ΩI O =0to 500mA210µFTYPICAL PERFORMANCE CHARACTERISTICS(unless otherwise specified V O(NOM)=3.3V)Figure1:Dropout Voltage vs Output Current Figure2:Dropout Voltage vs Temperature Figure3:Supply Current vs Input Voltage Figure4:Supply Current vs Input Voltage Figure5:Short Circuit Current vs Input Voltage Figure6:Supply Voltage Rejection vs InputVoltage12/17Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.17/17。

L298双全桥驱动器译自ST L298isMain elec tech studio S & T follow the nature E-mail：ismain@ QQ：2970904654All right reserved目录描述 (3)逻辑框图 (3)最大值 (4)引脚描述 (4)热参数 (5)引脚功能介绍 (5)电特性（Vs=42V;Vss=5V,Tj=25℃;有特殊说明除外） (6)应用介绍 (10)封装尺寸 (13)参考 (16)声明与广告 (16)■两通道工作电流高至4A■低静态电压■过热保护■逻辑0电平高至1.5V（高抗扰度）描述L298有15引脚Multiwatt直插封装和PowerSO20贴片封装。

L298兼容标准的TTL逻辑，是一款高电压、高电流双全桥驱动器，能够驱动感性负载，例如继电器、电磁阀、直流电机、步进电机等。

两个独立的使能信号用于使能或禁能设备，每一个桥的下管射极相连，射极引脚可以连接相应的采样电阻，用以过流保护，芯片的逻辑供电与负载供电分离，以使芯片可以工作在更低的逻辑电压下。

逻辑框图最大值引脚描述Multiwatt15引脚描述PowerSO20引脚描述热参数引脚功能介绍电特性（Vs=42V;Vss=5V,Tj=25℃;有特殊说明除外）图1 电流和饱和电压图2 开关时间测试电路图3 高边延时Note :For INPUT Switching, set EN = H For ENABLE Switching, set IN = L图4 开关时间测试电路图5 低边延时图6 双向直流电机控制图7 并联扩流驱动电路（注意1/4并联；2/3并联）应用介绍1.1功率输出级L298有两路功率输出级（A/B），功率输出级是一个桥形结构，它可以驱动（共模或差模）感性负载，驱动方式可以通过输入端来控制，正常工作时电流经过上桥/负载/下桥/下桥采样电阻形成通路，采样电阻（RSA/RSB）用于感知回路电流大小以便过流保护之用。

810基地发射极电压v101100101102103集电极电流ic毫安电流增益bandwidth产品主场迎战集电极电流103vce10v102柯伦吨增益101带妇母头参与发展thp产品为准f兆赫100110100101102103集电极电流ic毫安3of4qwr201001d芯片中文手册看全文戳easydscn2n5401pnp硅晶体管utc不承担由于使用产品超过即使是瞬间值设备故障不承担任何责任额定数值例如最大额定值工作环境范围或其他参数任何产品规格和描述或此处包含所有utc产品上市
芯片中文手册,看全文,戳
2N5401
高压开关 晶体管
PNP硅晶体管
1
特征
*集电极 - 发射极电压： VCEO = -150V
*高电流增益
订购信息
订单号 正常
2N5401-x-AB3-R 2N5401-x-T92-B 2N5401-x-T92-K
无铅电镀
2N5401L-x-AB3-R 2N5401L-x-T92-B 2N5401L-x-T92-K
集电极 - 发射极击穿电压
发射基地击穿电压 集电极截止电流 发射极截止电流
DC电流增益（注）
集电极 - 发射极饱和电压
符号
BV CBO BV CEO BV EBO I CBO
IEBO hFE1 hFE2 hFE3
VCE(SAT)
基地发射极饱和电压
VBE(SAT)
当前增益带宽产品
fT
输出电容
Cob
噪声系数
基地发射极电压（V）
电流增益-B andwidth产品
主场迎战集电极电流
10 3 V CE=- 10V
10 2 柯伦吨增益-
10 1 带妇母头参与发展THP产品为准,F（兆赫）