VC1019-151中文资料

1.5 1.2 0.9 0.6 0.3 0
-25 -15 -5 0 10 20 30 40 50 60 71 80 90 100

Vout
TA°C
9
Date: Jan 01, 2000.
元器件交易网
1.8watt 24pins DIP/DIL package 100/200 series
10
Date: Jan 01, 2000.
Physical Specifications:
Case Material: Non-conductive plastic case Weight: 12grams typical
Power Derating Curve
2.1 1.8
Simplified Schematic Vin
Control
Po(W)
Environmental Specifications:
Operating Temperature: -25 to + 71°C Storage Temperature: -40 to +105°C Cooling: Free air convection Derating: See Derating Curve Humidity Non-Condensing: 20 to 95% RH
YCL
Specifications: At 25°C Input Specifications:
Input Voltage Range: ± 10% Input Filter: Internal Capacitor
General Specifications:
Isolation Voltage: 500Vdc Efficiency: see table Switching Frequency: 25KHz typical Isolation Resistance: 1000M ohm

图文手把手教你一步步用vc2010编写通达信缠论插件1dll设计入门按照图文提示一步步往下走按照说明创建vc2010工程把文中的代码拷贝到文中说明的位置编译运行绝对通过
图文手把手教你一步步用 VC++2010 编写通 达信缠论插件（1-DLL 设计入门）
按照图文提示，一步步往下走，按照说明，创建 VC++2010 工程，把 文中的代码拷贝到文中说明的位置，编译运行，绝对通过！
本篇免收下载券。后面的要收了，但是，收也收很少，顶多收你一个 下载券，我心不贪，请大家支持点儿。
本来都是玩儿的， 但是， 我下载别人的资料， 也要下载券啊！ 同志们， 别骂我。
深谷老榆制作，2016.4.24
第一步、从“文件”菜单中，选择“新建”，然后选择“项目…”。
这时候弹出“新建项目”窗口，从“项目类型”窗格中选择“Win32 项目”，并填写工程名 称，自己命名，我这里是 ChanLunTdx。
点击“确定”按钮，出现下面“Win32 应用程序向导”窗口：
点击“下一步”按钮，出现“应用程序设置”窗口。
“应用程序类型”选择“DLL”，然后单击“完成”按钮。程序框架基本搭成。 第二步、双击“解决方案资源管理器”中“源文件”中的 dllmain.cpp 文件，按照下图所示 删掉无用代码：
则 dllmain.cpp 文件内容如下所示： // dllmain.cpp : 定义 DLL 应用程序的入口点。 #include "stdafx.h" BOOL APIENTRY DllMain( HMODULE hModule, DWORD ul_reason_for_call, LPVOID lpReserved ) { return TRUE; } 第三步、鼠标右键单击工程名，出现一个弹出窗口，选择“添加(D)”下“新建项(W)...”： 点击后出现“添加新项”窗口，在其中选择“头文件(.h)”，下面文件名选择“ChanLunTdx” ， 单击下面“添加”按钮：

P DPower DissipationBV DSS Drain – Source Breakdown Voltage BV GSS Gate – Source Breakdown Voltage I D(sat)Drain CurrentT stg Storage TemperatureT jMaximum Operating Junction Temperature50W 70V ±20V 5A–65 to 150°C200°CABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)APPLICATIONS•HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHzParameter Test Conditions Min.Typ.Max.UnitV GS = 0I D = 100mA V DS = 28V V GS = 0V GS = 20V V DS = 0I D = 10mA V DS = V GS V DS = 10V I D = 1AP O = 20W V DS = 28V I DQ = 0.1A f = 175MHz V DS = 28V V GS = –5V f = 1MHz V DS = 28V V GS = 0 f = 1MHz V DS = 28VV GS = 0f = 1MHz VmA µA V S dB %—pF pF pFELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise stated)Drain–Source BV DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current I GSS Gate Leakage Current V GS(th)Gate Threshold Voltage*g fs Forward Transconductance*G PS Common Source Power Gain ηDrain Efficiency VSWR Load Mismatch ToleranceC iss Input Capacitance C oss Output CapacitanceC rssReverse Transfer Capacitance7011170.8165020:160302.5HAZARDOUS MATERIAL WARNINGThe ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area.THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.THERMAL DATA* Pulse Test:Pulse Duration = 300 µs , Duty Cycle ≤2%Figure 1 – Power Output and Efficiencyvs. Power Input.Figure 2 – Power Output & Gainvs. Power Input.Figure 3 – IMD vs. Output Power.D1019UKOPTIMUM SOURCE AND LOAD IMPEDANCE!V DS = 28V, I DQ = 0.1A #MHZ S MA R 50Typical S ParametersSubstrate 1.6mm PTFE/glass, Er=2.5All microstrip lines W=4.4mmD1019UK 175MHz TEST FIXTURET110mm T213mm T312mm T44mm L1 1.5 turns 22swg enamelled copper wire, 6mm i.d. L210 turns 19swg enamelled copper wire, 6mm i.d. L3 1.5 turns 22swg enamelled copper wire, 6mm i.d. L413.5 turns 19swg enamelled copper wire on Siemens B64920A618X830 ferrite core。

© 2001 IXYS All rights reservedIXYS reserves the right to change limits, conditions and dimensions.Phase Control Thyristor ISOPLUS220TMElectrically Isolated Back Surface* Patent pendingISOPLUS220TM32Isolated back surface *1ACGV RRM = 800 - 1200 V I T(RMS)= 35 A I T(AV)M= 13 AV RSM V RRM TypeV DSM V DRM V V 800800CS 19-08ho1C 12001200CS 19-12ho1C Symbol Test Conditions Maximum RatingsI T(RMS)T VJ = T VJM35A I T(AV)M T C = 85°C; 180° sine 13A I TSMT VJ = 45°C;t = 10 ms (50 Hz), sine 100A V R = 0 V t = 8.3 ms (60 Hz), sine 105A T VJ = T VJM t = 10 ms (50 Hz), sine 85A V R = 0 Vt = 8.3 ms (60 Hz), sine 90A I 2tT VJ = 45°C t = 10 ms (50 Hz), sine 50A 2s V R = 0 V t = 8.3 ms (60 Hz), sine 45A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 36A 2s V R = 0 Vt = 8.3 ms (60 Hz), sine33A 2s (di/dt)crT VJ = T VJM repetitive, I T = 20 A 100A/µsf = 50 Hz, t P =200 µs V D = 2/3 V DRM I G =0.08 A non repetitive, I T = I T(AV)M 500A/µs di G /dt = 0.08 A/µs(dv/dt)cr T VJ = T VJM ;V DR = 2/3 V DRM500V/µs R GK = ∞; method 1 (linear voltage rise)P GM T VJ = T VJM t P =30 µs 5W I T = I T(AV)Mt P =300 µs2.5W P GAV 0.5W V RGM 10V T VJ -40...+125°C T VJM 125°C T stg -40...+125°C V ISOL 50/60 Hz RMS; I ISOL ≤ 1 mA 2500V~T L 1.6mm from case; 10s 260°C F CMounting force11...65 / 2.4 (11)N / lb Weight2gFeatures FeatureslSilicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mounting surface - 2500V electrical isolationlLow cathode-to-tab capacitance (15pF typical)l Planar passivated chips l Epoxy meets UL 94V-0lHigh performance glass passivated chipl Long-term stability of leakage current and blocking voltageApplicationsl Motor control lPower converter l AC power controllerl Light and temperature control lSCR for inrush current limiting in power supplies or AC driveAdvantagesl Space and weight savings lSimple mounting98789 (5/01)Symbol Test ConditionsCharacteristic ValuesI R , I D T VJ = T VJM ; V R = V RRM ; V D = V DRM ≤1mA V T I T= 30 A; T VJ = 25°C≤1.65V V T0For power-loss calculations only (T VJ = 125°C)0.87V r T 29m ΩV GT V D = 6 V;T VJ = 25°C ≤ 1.5V T VJ = -40°C ≤2.5V I GT V D = 6 V;T VJ = 25°C ≤25mA T VJ = -40°C ≤50mA V GD T VJ = T VJM ;V D = 2/3 V DRM≤0.2V I GD ≤3mA I L T VJ = 25°C; t P = 10 µs≤75mA I G =0.08 A; di G /dt =0.08 A/µs I H T VJ = 25°C; V D = 6 V; R GK = ∞≤50mA t gdT VJ = 25°C; V D = 1/2 V DRM≤2µsI G = 0.08 A; di G /dt = 0.08 A/µsR thJC DC current 1.7K/W R thCK DC currenttypical0.6K/W aMax. acceleration, 50 Hz50m/s 2ISOPLUS220 OUTLINENote: All terminals are solder plated.1 - Cathode2 - Anode3 - Gate。