KA78RH33RTF中文资料

STOP 3000.000000 MHz
ESD Response (8kV Contact per IEC 61000-4-2)
START. 030 MHz
STOP 3000.000000 MHz
Note: Data is taken with a 10x attenuator
© 2008 Semtech Corp.
tr = 8µs td = 20µs
e-t
td = IPP/2
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Time (µs)
Forward Voltage vs. peak Pulse Current
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Waveform
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Parameters:
tr = 8µs
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td = 20µs
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Peak Pulse Current - IPP (A)
Schematic & PIN Configuration
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Revision 11/18/2008
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SC-70 6L (Top View)

元器件交易网
PROTECTION PRODUCTS Absolute Maximum Rating
0 0
25
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Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current

TOSHIBA RF POWER AMPLIFIER MODULES-AV33AFM RF POWER AMPLIFIER MODULE FOR 32W COMMERCIAL VHF RADIO APPLICATIONS･Power Gain: 28 dB (Min.)･Total Efficiency: 45% (Min.)ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, I T < 10 A, Z G = Z L = 50Ω)CHARACTERISTICS SYMBOL TESTCONDITION RATING UNIT Maximum Current I T10 A Power Supply Voltage V DD V GG = 0 V (GND), RF: none 16.5 VControl Voltage V GG 10.5≤ V DD≤ 16.5 V, Pi = 50 mW 5.5 V Instantaneous Output Power PomaxV GG≤ 5.5 V, Pi = 50 mW, 10.5 ≤V DD ≤16.5V, within 2 seconds40 WInput Power P i 10.5≤ V DD≤ 16.5 V, V GG≤ 5.5 V 100 mW Operating Case Temperature T c (opr)10.5 ≤V DD ≤16.5 V, V GG≤ 5.5 V, Pi = 50mW (Note 2)-30 to 100 °C Storage Temperature T stg-40 to 110 °CNote 1: The maximum ratings are the limits that must not be exceeded even for an instant, under worst possible conditions. Exceeding the ratings may cause device damage, ignition, or deterioration. Therefore, whendesigning the circuitry, derating factors should be applied so that the absolute maximum ratings are notexceeded.Note 2: The output power rating satisfies the range shown in Figures 1 and 2 according to the operating case temperature. Ensure that the device should be operated within the specified operating range. The figures belowindicate the output power obtained 2 seconds after Po is generated.Note 3: The case temperature is monitored using the screw terminal blocks on the input side that are used for the module implementation.Note 4: To protect a device from being permanently damaged, the power-on sequence must be as follows (, while the reversed order should be applied when turning off): 1. VDD, 2. Pi, 3. VGG*When the device is used at Tc =100°C, the output power rating is 31 W as shown in Figure 1. When the power dissipation at Tc = 100°C exceeds the rating shown in Figure 2, the output derating is required to limit the dissipation within the specified range.Figure 1 Pomax-Tc Figure 2 PDmax-TcPACKAGE OUTLINEELECTRICAL CHARACTERISTICS (Tc = 25°C, Z G = 50Ω)CHARACTERISTICS SYMBOL TEST CONDITIONMIN TYP. MAXUNITFrequency Range f range — 134 — 174MHzOutput Power P o 32 — — WPower Gain G p 28 — — dB Total Efficiency ηT 45 — — %Input VSWR VSWRin — — 3.0 — Second Harmonic 2nd HRM V DD = 12.5 VV GG = 5 VPi = 50 mW Z L = 50 Ω — — -30 dB Third Harmonic3rd HRM——-30dBRuggedness — 10.5 V ≤ V DD ≤ 16.5 V, 0 V ≤ V GG ≤ V GGajs(V GG = V GGajs @ Po = 32 W)Pi = 50 mWP o = 32 W (Adjusted via V GG @ Z L = 50Ω)VSWR LOAD 20: 1 ALL PHASE (@ 2 s) No Damage —Stability — 10.5 V ≤ V DD ≤ 16.5 V, 0 V ≤ V GG ≤ V GGajs(V GG = V GGajs @ Po = 32 W)Pi = 50 mWP o ≤ 32 W (Adjusted via V GG @ Z L = 50Ω)VSWR LOAD 3: 1 ALL PHASENo spurious output of -60 dB or greater—Note 5:The output power is intended to follow the rating provided in Figure 1 in Note 2. Note 6: StabilityMeasurements are performed under the conditions where VSWR is at 3:1 through all phases over the whole frequency range, and they are guaranteed only under those conditions. Even though it is guaranteed to be stable where VSWR is at 3:1, the VSWR load over the operating frequency should be designed to be 50 Ω .At the same time, ensure that the VSWR load does not deviate much from 50Ω even for a moment, nor deviate even a little from 50Ω continually. The S-AU82AL is not intended for such operations, and proper operation under such conditions is not guaranteed due to the possibilities of heat generation in the module and its applications.HANDLING PRECAUTIONS･Since this product has a protective cap, care should be taken to avoid applying an excessive impact and allowing foreign objects to get inside when handling this product. Also, please do not remove a cap. If the cap is removed, the foreign object inside the module or the applied impact may lead IC failure, causing smoke or ignition.･Since this product is structurally susceptible to static electricity, protections against the static electricity should be applied to objects that may come in direct contact with devices, such as worktables, equipment, operators and solder irons.・This product is not designed nor intended to perform a continuous transmission for applications like a base station.Please do not use this product for such applications, for the reliability cannot be guaranteed.・This product is intended to be used for a single operation (single-device operation). A proper operation is not guaranteed for a parallel operation. A parallel operation should be performed in accordance with your own good judgment.・Mounting method・The flatness of a heat sink must not exceed 50 μm. If the flatness exceeds 50 μm, the device may experience an unexpected stress that may lead to module breakdown due to damage or ignition in the substrate inside a module and other module parts.・Please apply thermal compound between a module and a heat sink to improve the adhesive property.・Use a 4-mm diameter screw with the clamping screw torque of 1.2 to 1.5 Nm.・Please solder the module leads after the screw is clamped.EQUIVALENT CIRCUITTEST FIXTURE① PiZ G = 50 ΩGG ③ V DDPo = 50 Ω ⑤GROUND （Flange ）V GGV DDμFMARKINGProduct Number (without A)characters: Date of manufactureExplanation of Lot No.RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

RoHS Compliant4GB DDR3 SDRAM SO-DIMMProduct SpecificationsJanuary 27, 2014Version 1.1Apacer Technology Inc.1F., No.32, Zhongcheng Rd., Tucheng Dist., New Taipei City 236, TaiwanTel: +886-2-2267-8000 Fax: +886-2-2267-2261Table of ContentsGeneral Description (2)Ordering Information (2)Key Parameters (2)Specifications: (3)Features: (4)Pin Assignments (5)Pin Descriptions (7)Functional Block Diagram (8)Absolute Maximum Ratings (9)DRAM Component Operating Temperature Range (10)Operating Conditions (11)Mechanical Drawing (12)General DescriptionApacer 78.B2GCN.4000C is a 512M x 64 DDR3 SDRAM (Synchronous DRAM) SO-DIMM. This high-density memory module consists of 8 pieces 512M x 8 bits with 8 banks DDR3 synchronous DRAMs in BGA packages and a 2K EEPROM. The module is a 204-pins small-outlined, dual in-line memory module and is intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR3 SDRAM. The following provides general specifications of this module.Ordering InformationPart Number Bandwidth Speed Grade Max Frequency CAS Latency78.B2GCN.4000C 12.8 GB/sec 1600 Mbps 800 MHz CL11Density Organization Component Rank4GB 512M x 64 512M x8*8 1Key ParametersUnit MT/s DDR3-1066 DDR3-1333 DDR3-1600Grade -CL7 -CL9 -CL11tCK (min) 1.875 1.5 1.25 nsCAS latency 7 9 11 tCKtRCD (min) 13.125 13.5 13.75 nstRP (min) 13.125 13.5 13.75 nstRAS (min) 37.5 36 35 nstRC (min) 50.625 49.5 48.75 nsCL-tRCD-tRP 7-7-7 9-9-9 11-11-11 tCKSpecifications:♦On-DIMM thermal sensor : No♦Organization: 512 words x 64 bits, 1 rank♦Integrating 8 pieces of 4G bits DDR3 SDRAM sealed in FBGA♦Package: 204-pin socket type small outline dual in-line memory module (SO-DIMM)♦PCB: height 30.0mm, lead pitch 0.6 mm (pin), lead-free (RoHS compliant)♦Power supply VDD: 1.5V ± 0.075V♦Serial Presence Detect (SPD)♦Eight Internal banks for concurrent operation (components)♦Interface: SSTL_15♦Burst lengths (BL): 8 and 4 with Burst Chop (BC)♦CAS Latency (CL): 6, 7, 8, 9, 10, 11♦CAS Write Latency (CWL): 5, 6, 7, 8♦Supports auto pre-charge option for each burst access♦Supports auto-refresh/self-refresh♦Refresh cycles: 7.8㎲ at 0℃≤ TC ≤ +85℃Features:♦Double-date-rate architecture: 2 data transfers per clock cycle♦The high-speed data transfer is realized by the 8-bits prefetch pipelined architecture.♦Bi-directional differential data strobe (DQS and /DQS) is transmitted / received with data for capturing data at the receiver♦DQS: edge-aligned with data for read; center-aligned with data for write♦Differential clock inputs (CK and /CK)♦DLL aligns DQ and DQS transitions with CK transitions♦Data mask (DM) for writing data♦Posted CAS by programmable additive latency for enhanced command and data bus efficiency♦On-Die-Termination (ODT) for improved signal quality: Synchronous ODT/Dynamic ODT/Asynchronous ODT♦Multi-Purpose Register (MPR) for temperature read out♦ZQ calibration for DQ drive and ODT♦Programmable Partial Array Self-Refresh (PASR)♦/Reset pin for power-up sequence and reset function♦SRT range: normal/extended, auto/manual self-refresh♦Programmable output driver impedance controlPin AssignmentsPin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name1 VREFDQ 53 DQ19 105 VDD 157 DQ423 VSS 55 VSS 107 A10(AP)159 DQ435 DQ0 57 DQ24 109 BA0 161 VSS7 DQ1 59 DQ25 111 VDD 163 DQ489 VSS 61 VSS 113 /WE 165 DQ4911 DM0 63 DM3 115 /CAS 167 VSS13 VSS 65 VSS 117 VDD 169 /DQS615 DQ2 67 DQ26 119 A13 171 DQS617 DQ3 69 DQ27 121 /CS1 173 VSS19 VSS 71 VSS 123 VDD 175 DQ5021 DQ8 73 CKE0 125 NC 177 DQ5123 DQ9 75 VDD 127 VSS 179 VSS25 VSS 77 NC 129 DQ32 181 DQ5627 /DQS1 79 BA2 131 DQ33 183 DQ5729 DQS1 81 VDD 133 VSS 185 VSS31 VSS 83 A12(BC)135 /DQS4 187 DM733 DQ10 85 A9 137 DQS4 189 VSS35 DQ11 87 VDD 139 VSS 191 DQ5837 VSS 89 A8 141 DQ34 193 DQ5939 DQ16 91 A5 143 DQ35 195 VSS41 DQ17 93 VDD 145 VSS 197 SA043 VSS 95 A3 147 DQ40 199 VDDSPD45 /DQS2 97 A1 149 DQ41 201 SA147 DQS2 99 VDD 151 VSS 203 VTT49 VSS 101 CK0 153 DM551 DQ18 103 /CK0 155 VSSPin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name2 VSS 54 VSS 106 VDD 158 DQ464 DQ4 56 DQ28 108 BA1 160 DQ476 DQ5 58 DQ29 110 /RAS 162 VSS8 VSS 60 VSS 112 VDD 164 DQ5210 /DQS0 62 /DQS3 114 /CS0 166 DQ5312 DQS0 64 DQS3 116 ODT0 168 VSS14 VSS 66 VSS 118 VDD 170 DM616 DQ6 68 DQ30 120 ODT1 172 VSS18 DQ7 70 DQ31 122 NC 174 DQ5420 VSS 72 VSS 124 VDD 176 DQ5522 DQ12 74 CKE1 126 VREFCA 178 VSS24 DQ13 76 VDD 128 VSS 180 DQ6026 VSS 78 A15(NC) 130 DQ36 182 DQ6128 DM1 80 A14(NC) 132 DQ37 184 VSS30 /RESET 82 VDD 134 VSS 186 /DQS732 VSS 84 A11 136 DM4 188 DQS734 DQ14 86 A7 138 VSS 190 VSS36 DQ15 88 VDD 140 DQ38 192 DQ6238 VSS 90 A6 142 DQ39 194 DQ6340 DQ20 92 A4 144 VSS 196 VSS42 DQ21 94 VDD 146 DQ44 198 /EVENT44 VSS 96 A2 148 DQ45 200 SDA46 DM2 98 A0 150 VSS 202 SCL48 VSS 100 VDD 152 /DQS5 204 VTT50 DQ22 102 CK1 154 DQS552 DQ23 104 /CK1 156 VSSPin DescriptionsPin Name DescriptionAx* SDRAM address busBAx SDRAM bank selectDQx DIMM memory data bus/RAS SDRAM row address strobe/CAS SDRAM column address strobe/WE SDRAM write enable/CSx SDRAM Chip select linesCKEx SDRAM clock enable linesCKx SDRAM clock input/CKx SDRAM Differential clock inputDQSx SDRAM data strobes(positive line of differential pair)/DQSx SDRAM data strobes(negative line of differential pair)DMx SDRAM input maskSCL Clock input for serial PDSDA Data input/output for serial PDSAx Serial address inputVDD Power for internal circuitVDDSPD Serial EEPROM positive power supplyVREFDQ SDRAM I/O reference supplyVREFCA SDRAM command/address reference supplyVSS Power supply return(ground)VTT SDRAM I/O termination supply/RESET Set DRAM to known stateODTx On-die termination control linesNC Spare pins(no connect)/EVENT An output of the thermal sensor to indicate critical module temperature *IC Component Composition: 128Mx8 A0~A13256Mx8 A0~A14512Mx8 A0~A151024Mx8 A0~A15Functional Block DiagramDQS0]\B A [0:N ]DQS2DQS2DM2DQ [16:23]DQS4DQS4DM4DQ [32::39]DQS6DQS6DM6DQ [48::55]Absolute Maximum RatingsParameter Symbol Description Units Voltage on VDD pin relative to Vss V DD- 0.4 V ~ 1.975 V V Voltage on VDDQ pin relative to Vss V DDQ- 0.4 V ~ 1.975 V V Voltage on any pin relative to Vss V IN, V OUT- 0.4 V ~ 1.975 V V Storage Temperature TSTG -55 to +100 ℃Notes:1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to thedevice. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurementconditions, please refer to JESD51-2 standard.3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than 0.6 x VDDQ,when VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV..DRAM Component Operating Temperature RangeSymbol Parameter Rating Units NotesNormal Operating Temperature Range 0 to 85 ℃ 1,2 T OPERExtended Temperature Range 85 to 95 ℃ 1,3Notes:1. Operating Temperature T OPER is the case surface temperature on the center / top side of the DRAM. Formeasurement conditions please refer to the JEDEC document JESD51-2.2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supportedduring operation, the DRAM case temperature must be maintained between 0℃ - 85℃ under all operating conditions.3. Some applications require operation of the DRAM in the Extended Temperature Range between 85℃ and 95℃case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs.b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to eitheruse the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b andMR2 A7 = 1b), in this case IDD6 current can be increased around 10~20% than normal Temperaturerange.Operating ConditionsRecommended DC Operating Conditions - DDR3 (1.5V) operationRatingUnits Symbol ParameterMin. Typ. Max.VDD Supply Voltage 1.425 1.5 1.575 V VDDQ Supply Voltage for Output 1.425 1.5 1.575 V Notes:1. Under all conditions VDDQ must be less than or equal to VDD..2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.Mechanical DrawingUnit: mmFront side(All dimensions are in millimeters with ±0.15mm tolerance unless specified otherwise.)Revision HistoryRevision DateDescriptionRemark 0.9 08/28/2012 Official release 1.0 08/29/2012 release 1.107/23/2013 Changed headquarters addressGlobal PresenceTaiwan (Headquarters) Apacer Technology Inc.1F., No.32, Zhongcheng Rd., Tucheng Dist.,New Taipei City 236, Taiwan R.O.C.Tel: +886-2-2267-8000Fax: +886-2-2267-2261*******************U.S.A. Apacer Memory America, Inc.386 Fairview Way, Suite102,Milpitas, CA 95035Tel: 1-408-518-8699Fax: 1-408-935-9611***************Japan Apacer Technology Corp.5F, Matsura Bldg., Shiba, Minato-KuTokyo, 105-0014, JapanTel: 81-3-5419-2668Fax: 81-3-5419-0018*********************Europe Apacer Technology B.V.Science Park Eindhoven 5051 5692 EB Son,The NetherlandsTel: 31-40-267-0000Fax: 31-40-267-0000#6199***************China Apacer Electronic (Shanghai) Co., Ltd1301, No.251,Xiaomuqiao Road, Shanghai,200032, ChinaTel: 86-21-5529-0222Fax: 86-21-5206-6939****************.cnIndia Apacer Technologies Pvt Ltd,# 535, 1st Floor, 8th cross, JP Nagar 3rd Phase,Bangalore – 560078, IndiaTel: 91-80-4152-9061**********************。

7800的中文说明书现将八重洲FT-7800R的一些基本功能操作方法公布一下，方便大家操作。

一．设定频率1．在主机上设定（1）打开电源（2）按(V/M.MW)键进入VFO(频率)状态；（3）短按（BAND.SET）键设定您将使用的频段，如144段或430段或850段；（4）旋转频道旋钮来设定您要使用的频率，短按一下（MHz.PRI）键，将直接调整频率显示小数点前的数字。

2．用手咪直接设定（MH-48手咪）（1）打开电源；（2）按(V/M.MW)键进入VFO(频率)状态；（3）把您要使用的频率直接用手咪上的数字键输入。

二．设定亚音频1．按（BAND.SET）键一秒以上，进入操作菜单，用旋转频道旋钮选择至菜单第44项TN FRQ ，轻按一下（BAND.SET）键进入该选项，用旋转频道旋钮选择您需要的亚音值，然后按（BAND.SET）键一秒以上，退出操作菜单。

2．按一下（TONE.HM/RV）键，显示ENC ，3秒后将自动返回频率显示，屏幕将显示ENC 的小字，亚音设置完毕。

三．设定差频1．消除电台默认亚音 .按（BAND.SET）键一秒以上，进入操作菜单，用旋转频道旋钮选择至菜单第4项ARS ,轻按一下（BAND.SET）键进入该选项，用旋转频道旋钮选择OFF ,然后按（BAND.SET）键一秒以上，退出操作菜单。

2．设定差频值. 按（BAND.SET）键一秒以上，进入操作菜单，用旋转频道旋钮选择至菜单第39 项SHIFT ,轻按一下（BAND.SET）键进入该选项，用旋转频道旋钮选择您所需要的差频值,然后按（BAND.SET）键一秒以上，退出操作菜单。

3．激活差频. 按（BAND.SET）键一秒以上，进入操作菜单，用旋转频道旋钮选择至菜单第33项RPT.MOD,轻按一下（BAND.SET）键进入该选项，用旋转频道旋钮选择﹢或﹣选择上差频或下差频，然后按（BAND.SET）键一秒以上，退出操作菜单。