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BZX84-C2V2中文资料

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BZX84 SERIES 300mW SOT-23ZENER DIODESFeatures Vz Range 2.4 to 75VPower Dissipation 300mW

Features Silicon Planar Power Zener DiodesThe Zener voltages are graded according to theinternational E 24 standard.Standard Zener voltagetolerance is ±5%.Replace "C"with "B"for ±2% tol-erance.Other voltage tolerances and other Zenervoltages are available upon request.Maximum R

atings and Thermal Characteristics(TA= 25 unless otherwise noted)ParameterSymbolValueUnitZener CurrentIZM250mAPower Dissipation at Tamb= 25¡É Ptot300(1)mWThermal Resistance Junction to Ambient AirR󰀀JA420(1)¡É / WJunction TemperatureTj150¡É Storage Temperature RangeTS¡É

Notes:(1) Device on fiberglass substrate, see layout..016 (0.4) .056 (1.43).037(0.95).037(0.95)max. .004 (0.1).122 (3.1)

.016 (0.4)

.016 (0.4)123Top View

.102 (2.6).007 (0.175).045 (1.15).110 (2.8)

.052 (1.33)

.005 (0.125).094 (2.4).037 (0.95) SOT-23

Top ViewDimensions in inchesand (millimeters)

Silicon Epitaxial Planar Diode· Fast switching diode in case SOT-23, especiallysuited for automatic insertion.Mechanical DataCase:SOT-23 Plastic PackageWeight:approx.0.008g· · · Mounting PadLayout

0.079 (2.0)0.037 (0.95)0.035 (0.9)0.031 (0.8)

0.037 (0.95)

65 to +150-¡É 元器件交易网www.cecb2b.comBZX84 SERIES 300mW SOT-23ZENER DIODES BZX84-C1V8TBD1.702.005BZX84-C2V0TBD1.902.205BZX84-C2V2TBD2.102.40

5BZX84-C2V4Z112.202.605BZX84-C2V7Z122.502.905BZX84-C3Z132.803.205BZX84-C3V3Z143.103.505BZX84-C3V6Z153.403.805BZX84-C3V9Z163.704.105BZX84-C4V3Z174.004.605BZX84-C4V7Z14.405.005BZX84-C5V1Z24.805.405BZX84-C5V6Z35.206.005BZX84-C6V2Z45.806.605BZX84-C6V8Z56.407.205BZX84-C7V5Z67.007.905BZX84-C8V2Z77.708.705BZX84-C9V1Z88.509.605BZX84-C10Z99.410.65BZX84-C11Y110.411.65BZX84-C12Y211.412.75BZX84-C13Y312.414.15BZX84-C15Y413.815.65BZX84-C16Y515.317.15BZX84-C18Y616.819.15BZX84-C20Y718.821.25BZX84-C22Y820.823.35BZX84-C24Y922.825.65BZX84-C27Y1025.128.92BZX84-C30Y1128.032.02BZX84-C33Y1231.035.02BZX84-C36Y1334.038.02BZX84-C39Y1437.041.02BZX84-C43Y1540.046.02BZX84-C47Y1644.050.02BZX84-C51Y1748.054.02BZX84-C56Y1852.060.02BZX84-C62Y1958.066.02BZX84-C68Y2064.072.02BZX84-C75Y2170.079.02BZX84-B1V8TBD1.801.905BZX84-B2V0TBD2.012.095BZX84-B2V2TBD2.212.305BZX84-B2V4Z502.352.455BZX84-B2V7Z512.652.755BZX84-B3Z522.943.065BZX84-B3V3Z533.233.375BZX84-B3V6Z543.533.675BZX84-B3V9Z553.823.985BZX84-B4V3Z564.214.395BZX84-B4V7Z574.614.795BZX84-B5V1Z585.005.205BZX84-B5V6Z595.495.715BZX84-B6V2Z606.086.325BZX84-B6V8Z616.666.945BZX84-B7V5Z627.357.655BZX84-B8V2Z638.048.365BZX84-B9V1Z648.929.285BZX84-B10Z659.8010.25BZX84-B11Z6610.811.25BZX84-B12Z6711.812.25BZX84-B13Z6812.713.35BZX84-B15Z6914.715.35BZX84-B16Z7015.716.35BZX84-B18Z7117.618.45BZX84-B20Z7219.620.45BZX84-B22Z7321.622.45BZX84-B24Z7423.524.55BZX84-B27Z7526.527.52BZX84-B30Z7629.430.62BZX84-B33Z7732.333.72BZX84-B36Z7835.336.72BZX84-B39Z7938.239.82BZX84-B43Z8042.143.92BZX84-B47Z8146.147.92BZX84-B51Z8250.052.02BZX84-B56Z8354.957.12BZX84-B62Z8460.863.22BZX84-B68Z8566.669.42BZX84-B75Z8673.576.52Type±5% Tol.Zener Voltagerange(1)at IZT1VZ (V)min.max.Test CurrentIZT1(mA)

Notes:(1) Measured with pulses tp= 5 msElectrical Characteristics(TA= 25¡É unless otherwise noted) Maximum VF= 0.9V at IF= 10mAMarkingCodeType±2% Tol.Zener Voltagerange(1)at IZT1VZ (V)min.max.Test CurrentIZT1(mA)MarkingCode元器件交易网www.cecb2b.comBZX84 SERIES 300mW SOT-23ZENER DIODESRatings and Characteristic Cur ves (TA= 25¡É unless otherwise noted)

01020304050

012345678910I,ZENERCURRENT(mA)

ZV,ZENERVOLTAGE(V)Fig.2

ZenerBreakdownCharacteristicsZT=25°CjC2V7C3V3C3V9C4V7C5V6C6V8C8V2

TestCurrentI5.0mAZ

0246810

102030405060708090100I,ZENERCURRENT(mA)

ZV,

ZENERVOLTAGE(V)Fig.4ZenerBreakdownCharacteristicsZTj=25°C

TestCurrentI2mAZC39C43C47C51

C,JUNCTIONCAPACITANCE(pF)

j101001000

101001V,NOMINALZENERVOLTAGE(V)Fig.5JunctionCapacitancevsNominalZenerVoltageZT=25°Cj

V=1VRV=2VRV=1VR

V=2V

R400

T,AmbientTemperature,(°C)AFig.1PowerDeratingCurveP,PowerDissipation(mW)

dSeeNote1

200100300

0500

0100200

0102030

0I,ZENERCURRENT(mA)

ZV,ZENER

VOLTAGE(V)Fig.3ZenerBreakdownCharacteristicsZ10203040T=25°Cj

TestcurrentI5mAZTestcurrentI2mAZC10C12C18C22C27C33C36C15元器件交易网www.cecb2b.com

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831B中文资料

831B中文资料

ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series

Device Description

Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatin a wide rage of miniature surface mount packages.

Features

·Close tolerance C-V characteristics

·High tuning ratio

·Low IR(typically 200pA)

·Excellent phase noise performance

·High Q

·Range of miniature surface mount packages

Applications

·VCXOandTCXO

·Wireless communications

·Pagers

·Mobile radio

*Where steeper CV slopes are required there is the 12Vhyperabruptrange.ZC930, ZMV930, ZV930, ZV931 Series830 series

ISSUE 6 - JANUARY 2002

1SILICON 28V HYPERABRUPT VARACTOR DIODES元器件交易网830 series

ISSUE 6 - JANUARY 2002

2PARTCapacitance(pF)

EXB841 资料

EXB841 资料

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基于EXB841的IGBT 驱动电路优化设计

2008-10-12 18:52

IGBT是一种由双极晶体管与MOSFET组合的器件，既具有MOSFET的栅极电压控制快速开关特性，又具有双极晶体管大电流处理能力和低饱和压降的特点，作为高功率大电流的电能变换功率开关器件得到了广泛的应用.IGBT的门极驱动电路影响IGBT的通态压降、开关时间、开关损耗、承受短路电流能力及du/dt等参数，并决定了IGBT的静态与动态特性.因此，设计高性能的驱动与保护电路是安全使用IGBT的关键技术.日本FUJI公司的EXB841芯片是一种典型的适用于300A以下IGBT的专用驱动电路，具有单电源、正负偏压、过流检测、保护、软关断等主要特性，在国内外得到了广泛应用，但在中高频逆变电路的实际应用中还存在一些不足，导致IGBT的误导通或误关断，严重影响了设备的稳定性与可靠性.因此，基于EXB841的驱动电路优化设计成为了人们研究的重要内容.大多数文献提出了采用高压降检测二极管或稳压管与二极管反向串接等方法降低动作阈值，但调整受到较大限制.

本文在详细研究EXB841电路结构与工作原理的基础上，设计了一种优化驱动电路.该电路应用在大功率全桥逆变DBD型臭氧发生电源中，使用效果证明该优化电路解决了典型电路存在的问题，如电源在极小电流时的虚假过流报警、逆变桥直通，进一步提高了EXB841驱动的可靠性.

1 驱动芯片EXB841

图1所示为EXB841的内部电路和典型应用电路图，主要有3个工作过程：正常开通过程、正常关断过程和过流保护动作过程.14和15两脚间外加PWM控制信号，当10～15V的正向触发控制脉冲电压施加于15和14脚时，在GE两端产生约16 v的IGBT开通电压；当触发控制脉冲电压撤消时，在GE两端产生约-5.1 V的IGBT关断电压.过流保护动作过程是根据IGBT的CE极间电压Uce的大小判定是否过流而进行保护的，Uce由二极管V7检测.当IGBT开通时，若发生负载短路等产生大电流的故障，Uce上升很多，会使得二极管V7截止，EXB841的6脚“悬空”，B点和C点电位开始由约6 V 上升，当上升至13 V 时，Vs1被击穿，V3导通，C4通过R7和V3放电，E点的电压逐渐下降，V6导通，从而使IGBT的GE间电压Uge下降，实现缓关断，完成EXB841对IGBT的保护.E点电位Ue为-5.1 V，由EXB841内部的稳压二极管Vs2决定.

832B中文资料

832B中文资料

ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series

Device Description

Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatin a wide rage of miniature surface mount packages.

Features

·Close tolerance C-V characteristics

·High tuning ratio

·Low IR(typically 200pA)

·Excellent phase noise performance

·High Q

·Range of miniature surface mount packages

Applications

·VCXOandTCXO

·Wireless communications

·Pagers

·Mobile radio

*Where steeper CV slopes are required there is the 12Vhyperabruptrange.ZC930, ZMV930, ZV930, ZV931 Series830 series

ISSUE 6 - JANUARY 2002

1SILICON 28V HYPERABRUPT VARACTOR DIODES元器件交易网830 series

ISSUE 6 - JANUARY 2002

2PARTCapacitance(pF)

74AVCH2T45DC中文资料

74AVCH2T45DC中文资料

1.General description

The 74AVCH2T45 is a dual bit, dual supply transceiver that enables bidirectional leveltranslation. It features two data input-output ports (nA and nB), a direction control input(DIR)anddualsupplypins(VCC(A)andVCC(B)).BothVCC(A)andVCC(B)canbesuppliedatany voltage between 0.8V and 3.6V making the device suitable for translating betweenanyofthelowvoltagenodes(0.8V,1.2V,1.5V,1.8V,2.5Vand3.3V).PinsnAandDIRare referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allowstransmission from nA to nB and a LOW on DIR allows transmission from nB to nA.

The device is fully specified for partial power-down applications using IOFF. The IOFFcircuitry disables the output, preventing any damaging backflow current through thedevice when it is powered down. In suspend mode when either VCC(A) or VCC(B) are atGND level, both A and B are in the high-impedance OFF-state.