AOD5N50

Symbol R θJA R θCS R θJC
Maximum Junction-to-Ambient A,G
-55
Maximum
Thermal Characteristics
Units °C/W 43Parameter
Typical Absolute Maximum Ratings T A =25°C unless otherwise noted Maximum Case-to-sink
A
Maximum Junction-to-Case D,F
°C/W
°C/W 1
0.51.2
G
S D
G
S
D
Rev0: June 2010 Page 1 of 6
Symbol
Min
Typ
Max
Units
500
600BV DSS /∆TJ 0.6
V/ o C 110I GSS Gate-Body leakage current ±100n ΑV GS(th)Gate Threshold Voltage
3.4
4.1 4.5V R DS(ON) 1.2 1.6
Ωg FS 5S V SD 0.761
V I S Maximum Body-Diode Continuous Current 5
A I SM
17
A C iss 430
538670pF C oss 405880pF C rss 2.5 4.57pF R g
1.2
2.3
3.5ΩQ g 9
11.514nC Q gs 3 3.8 4.6nC Q gd 2
4.1 6.2nC t D(on)18ns t r 32ns t D(off)34ns t f 22ns t rr 145182220ns Q rr
1.7
2.2
2.7µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage I D =250µA, V GS =0V, T J =25°C I D =250µA, V GS =0V, T J =150°C Body Diode Reverse Recovery Charge I F =5A,dI/dt=100A/µs,V DS =100V
Maximum Body-Diode Pulsed Current
Input Capacitance Output Capacitance Turn-On DelayTime Turn-On Rise Time Diode Forward Voltage
Turn-Off DelayTime V GS =10V, V DS =250V, I D =5A, R G =25Ω
Gate resistance
V GS =0V, V DS =0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge V GS =10V, V DS =400V, I D =5A
Gate Source Charge Gate Drain Charge V DS =5V I D =250µA V DS =400V, T J =125°C I S =1A,V GS =0V
V DS =40V, I D =2.5A Forward Transconductance DYNAMIC PARAMETERS Zero Gate Voltage Drain Current ID=250µA, VGS=0V V DS =0V, V GS =±30V I DSS Zero Gate Voltage Drain Current V DS =500V, V GS =0V Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions
BV DSS µA V Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance V GS =10V, I D =2.5A Reverse Transfer Capacitance I F =5A,dI/dt=100A/µs,V DS =100V
V GS =0V, V DS =25V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. L=60mH, I AS =2.8A, V DD =150V, R G =10Ω, Starting T J =25°C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
AOD5N50
Vds
C ha rge
Gate Charge Test Circuit & W av eform
Resistiv e Switching Test Circuit & W av eforms
Vdd
Vds
I d
Vgs
B V I Unclamped Inductive Switching (UIS) Test Circuit & W av eforms
AR
DSS
2E = 1/2 LI V dd
AR
AR。