C771LA中文资料

August 2006 Rev 21/33VN771KQuad smart power solid state relay for complete H-bridge configurationsFeatures■Suited as low voltage bridge ■Linear current limitation■Very low stand-by power dissipation ■Short circuit protected■Status flag diagnostic (open drain)■Integrated clamping circuits ■Undervoltage protection ■ESD protectionDescriptionThe VN771K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 T echnology.This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application.The dual high side switches have built-in thermal shutdown to protect the chips fromovertemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature.The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin.Type R DS(on)I OUT V CC VN771K95 m Ω(1)1.Total resistance of one side in bridge configuration 9A (2)2.Typical current limitation value36VOrder codesPackage Part number (Tube)Part number (Tape & reel)SO-28VN771KVN771K13TRContents VN771KContents1Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103.1Electrical characteristics for dual high side switch . . . . . . . . . . . . . . . . . . 103.2Electrical characteristics for low side switches . . . . . . . . . . . . . . . . . . . . . 123.3Dual high-side switch timing data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153.4Electrical characterization for dual high side switch . . . . . . . . . . . . . . . . . 163.5Electrical characterization for low side switches . . . . . . . . . . . . . . . . . . . . 19 4Application recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 235Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265.1SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265.2Thermal calculation in clockwise and anti-clockwiseoperation in steady-state mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275.2.1Thermal resistances definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275.2.2Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 275.2.3Single pulse thermal impedance definition . . . . . . . . . . . . . . . . . . . . . . 275.2.4Pulse calculation formula . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 276Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306.1SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306.2SO-28 tube shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316.3Tape and reel shipment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 7Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322/33VN771K List of tables List of tablesTable 1.Pin definition and function. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 2.Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 3.Dual high side switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 4.Low side switch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 5.Power outputs (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 6.Switching (per each channel) (VCC = 13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 7.Logic input (per each channel). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 8.Status pin (per each channel). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 9.Protections (per each channel). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 10.Openload detection (per each channel) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 11.Off state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 12.On state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 13.Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 14.Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 15.Source drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 16.Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 17.Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 18.Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 27 Table 19.Thermal parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Table 20.SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Table 21.Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323/33List of figures VN771K List of figuresFigure 1.Connection diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2.Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 3.Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 4.Open load status timing (with external pull-up). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 5.Over temperature status timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 6.Off state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 7.Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 8.High level input current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 9.Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 10.Input low level. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 11.Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 12.Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 13.ILIM vs Tcase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 14.Turn-on voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 15.Turn-off voltage slope. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 16.On state resistance vs Tcase. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 17.On state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 18.Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 19.Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 20.Openload on state detection threshold. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 21.Openload off state voltage detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 22.Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 23.Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 24.Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 25.Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 26.Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 27.Turn on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 28.Turn on current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 29.Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 30.Capacitance variations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 31.Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 32.Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 33.Output characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 34.Step response current limit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 35.Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 36.Static drain-source on resistance vs id. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 37.Static drain-source on resistance vs input voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 38.Static drain-source on resistance vs input voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 39.Normalized input threshold voltage vs temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 40.Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 41.Turn off drain-source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 42.Turn off drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 43.Current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 44.Application diagram bridge drivers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 45.Recommended motor operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 46.Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 47.SO-28 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 48.Chipset configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 49.Auto and mutual Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . 26 4/33VN771K List of figures Figure 50.SO-28 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . 28 Figure 51.SO-28 LSD thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . 28 Figure 52.Thermal fitting model of an H-bridge in SO-28. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 53.SO-28 package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 54.Tube dimensions (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Figure 55.Tape and reel dimensions (suffix “13TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 315/33Summary description VN771K6/331 Summary descriptionTable 1.Pin definition and functionNo Name Function1, 3, 25, 28DRAIN 3Drain of Switch 3 (low-side switch)2INPUT 3Input of Switch 3 (low-side switch)4, 11N.C.Not connected5, 10, 19, 24V CC Drain of Switches 1 and 2 (high-side switches) and PowerSupply Voltage6GND Ground of Switches 1 and 2 (high-side switches)7INPUT 1Input of Switch 1 (high-side switches)8DIAGNOSTIC Diagnostic of Switches 1 and 2 (high-side switches)9INPUT 2Input of Switch 2 (high-side switch)12, 14, 15, 18DRAIN 4Drain of Switch 4 (low-side switch)13INPUT 4Input of Switch 4 (low-side switch)16, 17SOURCE 4Source of Switch 4 (low-side switch)20, 21SOURCE 2Source of Switch 2 (high-side switch)22, 23SOURCE 1Source of Switch 1 (high-side switch)26, 27SOURCE 3Source of Switch 3 (low-side switch)VN771K Summary description7/33Figure 2.Block diagramOVERTEMP . 1V CCGND INPUT1SOURCE1OVERVOLTAGE LOGICDRIVER 1DIAGV CC CLAMPUNDERVOLTAGECLAMP 1OPENLOAD ON 1CURRENT LIMITER 1OPENLOAD OFF 1SOURCE2DRIVER 2CLAMP 2OPENLOAD ON 2OPENLOAD OFF 2OVERTEMP . 2INPUT2CURRENT LIMITER 2Overvoltage Gate Linear DRAIN3SOURCE3ClampCurrent LimiterControlOver TemperatureINPUT3Overvoltage Gate Linear DRAIN4SOURCE4ClampCurrent LimiterControlOver TemperatureINPUT4Summary description VN771K8/33Table 2.Thermal dataSymbol ParameterValue Max(°C/W)R thj-case Thermal Resistance Junction-case (High-side switch)20R thj-case Thermal Resistance Junction-case(Low-side switch)20R thj-amb Thermal Resistance Junction-ambient (with 6 cm^2 of Cu heat sink)62VN771K Maximum ratings9/332 Maximum ratingsTable 3.Dual high side switchSymbol ParameterValue Unit V CC DC Supply Voltage 41V -V CC Reverse DC Supply Voltage -0.3V -I GND DC Reverse Ground Pin Current -200mA I OUT DC Output CurrentInternally LimitedA -I OUT Reverse DC Output Current -6A I IN DC Input Current ±10mA I STATDC Status Current±10mAV ESDElectrostatic Discharge (Human Body Model:R =1.5K Ω; C =100pF)–Input –Status –Output –V CC4000400050005000V V V V P tot Power Dissipation (T C =25°C)6W T j Junction Operating Temperature Internally Limited°C T c Case Operating T emperature -40 to 150°C T stgStorage Temperature-55 to 150°CTable 4.Low side switchSymbol ParameterValue Unit V DS Drain-source Voltage (V IN =0V)Internally Clamped V V IN Input Voltage Internally ClampedV I IN Input Current±20mA R IN MIN Minimum Input Series Impedance 10ΩI D Drain CurrentInternally LimitedA I R Reverse DC Output Current-15A V ESD1Electrostatic Discharge (R =1.5K Ω, C =100pF)4000V V ESD2Electrostatic Discharge on output pin only (Human Body Model: R =330Ω, C =150pF)5000V P tot Power Dissipation (T C =25°C)6W T j Operating Junction Temperature Internally limited °C T c Case Operating Temperature Internally limited °C T stgStorage T emperature-55 to 150°CElectrical characteristics VN771K10/333 Electrical characteristics3.1 Electrical characteristics for dual high side switch8V < V CC < 36V; -40°C < T j < 150°C, unless otherwise specified.Table 5.Power outputs (per each channel)Symbol Parameter Test ConditionsMin Typ Max Unit V CC (1)1.Per deviceOperating SupplyVoltage 5.51336V V USD (1)Undervoltage Shut-down 345.5V V OV (1)Overvoltage Shut-down 36V R ONOn State ResistanceI OUT =2A;T j =25°C I OUT =2A;V CC >8V60120m Ωm ΩI S (1)Supply CurrentOff State; V CC =13V; V IN =V OUT =0V Off State; V CC =13V; V IN =V OUT =0V; T j =25°COn State; V CC =13V;1212540257µA µA mA I L(off1)Off State OutputCurrentV IN =V OUT =0V;V CC =36V;T j =125°C050µA I L(off2)Off State OutputCurrentV IN =0V;V OUT =3.5V-750µA I L(off3)Off State OutputCurrentV IN =V OUT =0V;V CC =13V; T j =125°C5µA I L(off4)Off State OutputCurrentV IN =V OUT =0V;V CC =13V; T j =25°C3µATable 6.Switching (per each channel) (V CC = 13V)Symbol Parameter Test ConditionsMinTyp Max Unit t d(on)T urn-on Delay Time R L =6.5Ω from V IN rising edge to V OUT =1.3V30µs t d(off)T urn-off Delay TimeR L =6.5Ω from V IN falling edge to V OUT =11.7V30µs dV OUT /dt (on)T urn-on Voltage Slope R L =6.5Ω from V OUT =1.3V to V OUT =10.4V(1)1.See relative diagramV/µs dV OUT /dt (off)T urn-off Voltage SlopeR L =6.5Ω from V OUT =11.7V to V OUT =1.3V(1)V/µs11/33Note:To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles.Table 7.Logic input (per each channel)Symbol Parameter Test ConditionsMinTypMax Unit V IL Input Low Level 1.25V I IL Low Level Input Current V IN = 1.25V1µA V IH Input High Level 3.25V I IH High Level Input CurrentV IN = 3.25V10µA VI (hyst)Input Hysteresis Voltage0.5V V ICLInput Clamp VoltageI IN = 1mA I IN = -1mA 66.8-0.78V VTable 8.Status pin (per each channel)Symbol Parameter Test ConditionsMinTypMax Unit V STAT Status Low Output Voltage I STA T =1.6 mA0.5V I LST AT Status Leakage Current Normal Operation; V ST AT = 5V 10µA C ST AT Status Pin Input CapacitanceNormal Operation; V ST AT = 5V 100pF V SCLStatus Clamp VoltageI STA T = 1mA I STA T = -1mA66.8-0.78V VTable 9.Protections (per each channel)Symbol Parameter Test ConditionsMin Typ Max Unit T TSD Shut-down Temperature 150175200°C T R Reset Temperature 135°C T hyst Thermal Hysteresis 715°C t SDLStatus Delay inOverload Conditions T j >T TSD20µs I limCurrent limitationT j =125°C5.5V <V CC <36V68.59151515A A A V demagTurn-off Output ClampVoltageI OUT =2A;L =6mHV CC -41V CC -48V CC -55V12/333.2 Electrical characteristics for low side switches-40°C < Tj < 150°C, unless otherwise specified.Table 10.Openload detection (per each channel)Symbol Parameter Test ConditionsMinTyp Max Unit I OL Openload ON State Detection Threshold V IN =5V 50100200mA t DOL(on)Openload ON State Detection Delay I OUT =0A 200µsV OL Openload OFF State Voltage Detection ThresholdV IN =0V1.52.53.5Vt DOL(off)Openload Detection Delay at Turn Off1000µsTable 11.Off stateSymbol Parameter Test ConditionsMin Typ Max Unit V CLAMP Drain-source ClampVoltageV IN =0V;I D =7A 404555V V CLTH Drain-source Clamp Threshold Voltage V IN =0V;I D =2mA 36V V INTH Input Threshold VoltageV DS =V IN ; I D =1mA 0.52.5V I ISS Supply Current from Input PinV DS =0V;V IN =5V 100150µA V INCLInput-Source Clamp VoltageI IN =1mA I IN =-1mA6-1.0 6.88-0.3VI DSSZero Input Voltage Drain Current (V IN =0V)V DS =13V; V IN =0V;T j =25°C V DS =25V; V IN =0V3075µATable 12.On stateSymbol Parameter Test ConditionsMinTypMax Unit R DS(on)Static Drain-source On ResistanceV IN =5V;I D =7A; T j =25°C V IN =5V;I D =7A3570m Ω13/33T j =25°C, unless otherwise specified.Table 13.DynamicSymbol Parameter Test ConditionsMinTyp MaxUnit g fs (1)1.Pulsed: Pulse duration = 300µs, duty cycle 1.5%ForwardTransconductance V DD =13V; I D =7A18S C OSSOutput CapacitanceV DS =13V; f =1MHz; V IN =0V400pFTable 14.SwitchingSymbol Parameter Test ConditionsMinTyp Max Unit t d(on)Turn-on Delay Time V DD =15V; I D =7AV gen =5V; R gen =R IN MIN =10Ω80250ns t r Rise Time3501000ns t d(off)Turn-off Delay Time 4501350ns t f Fall Time150500ns t d(on)Turn-on Delay Time V DD =15V; I D =7AV gen =5V; R gen =2.2K Ω 1.5 4.5µs t r Rise Time9.730µs t d(off)Turn-off Delay Time 925µs t fFall Time10.230µs (dI/dt)on Turn-on Current Slope V DD =15V; I D =7AV gen =5V; R gen =R IN MIN =10Ω16A/µs Q iTotal Input ChargeV DD =12V; I D =7A;V IN =5V I gen =2.13mA36.8nCTable 15.Source drain diodeSymbol Parameter Test ConditionsMinTyp MaxUnit V SD (1)1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5%Forward On Voltage I SD =7A; V IN =0V0.8V t rr Reverse Recovery TimeI SD =7A; dI/dt =40A/µs V DD =30V; L =200µH300ns Q rr Reverse Recovery Charge0.80µC I RRMReverse Recovery Current5A-40°C < Tj < 150°C, unless otherwise specified.Table 16.ProtectionsSymbol Parameter Test Conditions Min Typ Max UnitI lim Drain Current Limit V IN=5V;V DS=13VV IN=5V;V DS=13V;T j=125°C1215182424AAt dlim Step ResponseCurrent LimitV IN=5V;V DS=13V45µsT jsh OvertemperatureShutdown150175°CT jrs OvertemperatureReset135°CI gf Fault Sink Current V IN= 5V; V DS=13V;T j=T jsh101520mAE as Single PulseAvalanche Energystarting T j=25°C; V DD=24VV IN=5V;R gen=R IN MIN=10Ω;L=24mH400mJ14/3315/333.3Dual high-side switch timing dataFigure 3.Switching time waveformsttV OUT nV IN n80%10%dV OUT /dt(on)td(off)90%dV OUT /dt(off)td(on)Table 17.Truth tableConditions Input Output Status Normal Operation L H L H H H Current Limitation L H H L X X H(T j < T TSD ) H (T j > T TSD ) LOvertemperature L H L L H L Undervoltage L H L L X X Overvoltage L H L L H H Output Voltage > V OL L H H H L H Output Current < I OLL HL HH LFigure 4.Open load status timing (withFigure 5.Over temperature status timing3.4 Electrical characterization for dual high side switch16/3317/33Figure 20.Openload on state detectionFigure 21.Openload off state voltage18/33characterization for low side switch es3.5 Electrical19/3320/33Figure 35.Source-drain diode forwardFigure 36.Static drain-source on resistanceFigure 37.Static drain-source on resistance Figure 38.Static drain-source on resistanceFigure 39.Normalized input threshold voltage Figure 40.Normalized on resistance vs21/33Figure 43.Current limit vs junction22/33recommendations4 ApplicationMost motor bridge drivers use a reverse battery protection diode (D) inside the supply rail.This diode prevents a reverse current flow back to V BATT in case the bridge becomesdisabled via the logic inputs while motor inductance still carries energy. In order to prevent ahazardous overvoltage at circuit supply terminal (V CC), a blocking capacitor (C) is needed tolimit the voltage overshoot. As basic orientation, 50µF per 1A load current is recommended.As an alternative, a Zener protection (Z) is also suitable.Even if a reverse polarity diode is not present, it is recommended to use a capacitor orZener at V CC because a similar problem appears in case the supply terminal of the modulehas intermittent electrical contact to the battery or gets disconnected while the motor isoperating.23/3324/3325/33Thermal data VN771K26/335 Thermal data5.1SO-28 thermal dataFigure 47.SO-28 PC boardFigure 48.Chipset configurationFigure 49.Auto and mutual R thj-amb vs PCB copper area in open box free air conditionLayout condition of Rth and Zth measurements (PCB FR4 area = 58mm x 58mm, PCB thickness =2mm,Cu thickness =35mm, Copper areas: from minimum pad layout to 16cm 2).HIGH SIDE CHIPchannels 1, 2LOW SIDE CHIP LOW SIDE CHIP channel 3channel 4VN771K Thermal data27/335.2Thermal calculation in clockwise and anti-clockwise operation in steady-state mode5.2.1 Thermal resistances definitionValues according to the PCB heatsink area.R thHS = R thHS1 = R thHS2 = High Side Chip Thermal Resistance Junction to Ambient (HS 1 orHS 2 in ON state)R thLS = R thLS3 = R thLS4 = Low Side Chip Thermal Resistance Junction to Ambient R thHSLS = R thHS1LS4 = R thHS2LS3 = Mutual Thermal Resistance Junction to Ambient between High Side and Low Side ChipsR thLSLS = R thLS3LS4 = Mutual Thermal Resistance Junction to Ambient between Low Side Chips5.2.2Thermal calculation in transient mode (a)T jHS12 = Z thHS x P dHS12 + Z thHSLS x (P dLS3 + P dLS4) + T amb T jLS3 = Z thHSLS x P dHS12 + Z thLS x P dLS3 + Z thLSLS x P dLS4 + T amb T jLS4 = Z thHSLS x P dHS12 + Z thLSLS x P dLS3 + Z thLS x P dLS4 + T amb5.2.3 Single pulse thermal impedance definitionValues according to the PCB heatsink area.Z thHS = High Side Chip Thermal Impedance Junction to AmbientZ thLS = Z thLS3 = Z thLS4 = Low Side Chip Thermal Impedance Junction to Ambient Z thHSLS = Z thHS12LS3 = Z thHS12LS4 = Mutual Thermal Impedance Junction to Ambientbetween High Side and Low Side ChipsZ thLSLS = Z thLS3LS4= Mutual Thermal Impedance Junction to Ambient between Low Side Chips5.2.4 Pulse calculation formulaTable 18.Thermal calculation in clockwise and anti-clockwise operation in steady-state modeHS 1HS 2LS 3LS 4T jHS12T jLS3T jLS4ON OFF OFF ON P dHS1 x R thHS + P dLS4 xR thHSLS + T amb P dHS1 x R thHSLS + P dLS4 x R thLSLS + T amb P dHS1 x R thHSLS + P dLS4 xR thLS + T amb OFFONONOFFP dHS2 x R thHS + P dLS3 xR thHSLS + T ambP dHS2 x R thHSLS + P dLS3 x R thLS + T amb P dHS2 x R thHSLS + P dLS3 x R thLSLS + T amba.Calculation is valid in any dynamic operating condition. P d values set by user.Z TH δR TH δZ THtp 1δ–()+Þ=where δt p T§=。

pc817中文资料及PDF下载pc817是常用的线性光藕，广泛用在电脑终端机，可控硅系统设备，测量仪器，影印机，自动售票，家用电器，如风扇，加热器等电路之间的信号传输，常常在各种要求比较精密的功能电路中被当作耦合器件，具有上下级电路完全隔离的作用，相互不产生影响。

使之前端与负载完全隔离，目的在于增加安全性，减小电路干扰，减化电路设计。

特点：电流传输比(CTR: MIN. 50% at IF=5mA ,VCE=5V)高隔离电压:5000V有效值紧凑型双列直插封装公认的UL认证，档案编号E64380Absolute Maximum Ratings PC817光耦绝对最大额定值当输入端加电信号时，发光器发出光线，照射在受光器上，受光器接受光线后导通，产生光电流从输出端输出，从而实现了"电-光-电"的转换。

普通光电耦合器只能传输数字信号（开关信号），不适合传输模拟信号。

线性光电耦合器是一种新型的光电隔离器件，能够传输连续变化的模拟电压或电流信号，这样随着输入信号的强弱变化会产生相应的光信号，从而使光敏晶体管的导通程度也不同，输出的电压或电流也随之不同。

Parameter 参数Symbol符号Rating 数值Unit 单位输入侧Forward current 正向电流IF 50 mA *1Peak forward current 峰值正向电流IFM 1 A Reverse voltage 反向电压VR 6 V Power dissipation 功耗P 70 mW输出侧Collector-emitter voltage 集电极发射极电压V CEO 35 V Emitter-collector voltage 发射极集电极电压V ECO 6 V Collector current 集电极电流IC 50 mA Collector power dissipation 集电极功耗PC 150 mWTotal power dissipation 总功耗P tot 200 mW *2Isolation voltage 隔离电压V iso 5 000 VrmsOperating temperature 操作温度T opr -30 to + 100℃Storage temperature 存储温度T stg -55 to + 125℃*3Soldering temperature 焊接温度T sol 260 ℃* 1 脉冲宽度<=100ms，占空比:0.001* 2 40至60％相对湿度，交流1分钟* 3 10秒Electro-optical Characteristics光电特性Parameter 参数Symbol 符号Conditions 测数值试条件最小典型最大典型输入侧Forward voltage正向电压V F IF = 20mA - 1.2 1.4 V Peak forward voltage正向峰值电压V FM IFM = 0.5A -- 3.0 V Reverse current 反向电流IR VR =4V --10 μA Terminal capacitance 终端电容Ct V = 0, f = 1kHz -3025pF输出侧Collector dark current 集电极暗电流ICEO VCE = 20V --10-7ATransfer charac-teris tics 传输特点*4Current transfer ratio电流传输比CTRIF = 5mA, V CE= 5V50 -60% Collector-emittersaturation voltage 集电极发射极饱和电压V CE(sat)IF = 20mA, I C= 1mA-0.1 0.2 V Isolation resistance 隔离电阻R ISODC500V, 40 to60% RH5x10101011-ΩFloating capacitance 浮动电容CfV = 0, f =1MHz-0.6 1.0 p F Cut-off frequency截止频率fcVCE = 5V, I C= 2mA, R L =100 W, -3dB-80 -kHzResponsetime 响应时间Rise time 上升时间tr VCE = 2V, I C= 2mA, R L =100 W- 4 18 μs Fall time下降时间tf - 3 18 μs* 4分类表电流传输比如下所示Model No. 型号Rank mark 等级标志电流传输比CTR ( % ) PC817A A 80 to 160PC817B B 130 to 260PC817C C 200 to 400PC817D D 300 to 600PC8 * 7AB A 或B 80 to 260PC8 * 7BC B 或C 130 to 400 PC8 * 7CD C 或D 200 to 600 PC8 * 7AC A, B 或C 80 to 400 PC8 * 7BD B, C 或D 130 to 600 PC8 * 7AD A, B, C 或D 80 to 600 PC8 * 7 A, B, C, D 或无标记50 to 600 *：1或2或3或4文章来源：http://www.originic.hk/Item/Show.asp?m=1&d=1689。

771所芯片手册（原创实用版）目录1.771 所芯片手册概述2.771 所芯片手册的主要内容3.771 所芯片手册的特点和优势4.如何获取和使用 771 所芯片手册正文【771 所芯片手册概述】771 所芯片手册是一本详尽介绍 771 所芯片的指南，旨在帮助工程师、技术人员以及其他相关人员更好地理解和应用这些芯片。

该手册包含了 771 所芯片的各项技术细节、应用方法和注意事项，是使用这些芯片的必备参考资料。

【771 所芯片手册的主要内容】771 所芯片手册主要包括以下内容：1.芯片概述：介绍了芯片的功能、特点和应用领域。

2.芯片架构：详细描述了芯片的内部结构、工作原理和运行流程。

3.引脚定义：列举了芯片的所有引脚及其功能、电气特性和连接方式。

4.寄存器和存储器：说明了芯片中的寄存器和存储器的作用、结构和访问方式。

5.指令集和编程：介绍了芯片的指令集、编程方法和编程注意事项。

6.电源和时序要求：描述了芯片的电源要求、时序要求和稳定性要求。

7.应用实例：提供了芯片在实际应用中的实例和设计方法。

【771 所芯片手册的特点和优势】771 所芯片手册具有以下特点和优势：1.详尽全面：手册内容全面，涵盖了芯片的各个方面，使用户能够充分了解芯片的性能和特性。

2.易懂易用：手册采用简洁明了的文字和图表，方便用户快速掌握芯片的使用方法。

3.实用性强：手册中提供了丰富的应用实例和设计方法，有助于用户将芯片应用于实际项目中。

4.更新及时：手册会随着芯片的更新换代而更新，确保用户始终掌握最新的技术信息。

【如何获取和使用 771 所芯片手册】要获取 771 所芯片手册，可以通过以下途径：1.访问 771 所官方网站，下载手册电子版。

2.向 771 所申请纸质版手册。

在使用手册时，请注意以下几点：1.仔细阅读手册，充分了解芯片的性能、特性和限制。

2.在实际应用中，务必遵循手册中的建议和注意事项，确保芯片的稳定运行。

771所芯片手册【原创实用版】目录1.771 所芯片手册概述2.771 所芯片手册的主要内容3.771 所芯片手册的应用领域4.771 所芯片手册的特点和优势5.结论正文一、771 所芯片手册概述771 所芯片手册是一本详尽介绍 771 所芯片的技术指南，该手册由我国知名的电子技术研究机构编写，旨在为广大工程师和技术人员提供一份全面、实用的参考资料。

手册中涵盖了 771 所芯片的各种技术参数、工作原理、应用方法等方面的信息，对于电子技术领域的从业者具有很高的参考价值。

二、771 所芯片手册的主要内容1.771 所芯片的基本信息：包括芯片的型号、规格、生产厂家等基本信息。

2.771 所芯片的工作原理：详细介绍了芯片的工作原理，包括电路设计、主要器件、功能模块等方面的内容。

3.771 所芯片的技术参数：列举了芯片的各种技术参数，如输入电压、输出电压、工作温度、存储容量等。

4.771 所芯片的应用方法：提供了芯片在不同领域的应用实例，包括硬件设计、软件编程、系统集成等方面的内容。

5.771 所芯片的测试与调试：介绍了芯片的测试方法、调试技巧以及故障排除等方面的知识。

三、771 所芯片手册的应用领域771 所芯片手册适用于多个领域，如通信、计算机、家电、工业控制等。

手册中的技术知识和应用实例可帮助工程师和技术人员解决各类技术问题，提高产品研发和系统集成的效率。

四、771 所芯片手册的特点和优势1.权威性：手册由我国知名的电子技术研究机构编写，内容具有很高的权威性。

2.全面性：手册涵盖了 771 所芯片的各个方面，包括基本信息、工作原理、技术参数、应用方法等，内容全面。

3.实用性：手册中提供了丰富的应用实例和技巧，有助于工程师和技术人员解决实际问题。

4.持续更新：手册将根据 771 所芯片的技术发展不断更新，确保内容始终保持最新。

五、结论771 所芯片手册是一本具有很高参考价值的技术指南，全面、详细地介绍了 771 所芯片的各种技术参数、工作原理、应用方法等方面的内容。