ST13005-1

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ST13005STB13005-1

HIGHVOLTAGEFAST-SWITCHING

NPNPOWERTRANSISTORS

sMEDIUMVOLTAGECAPABILITY

sNPNTRANSISTORS

sLOWSPREADOFDYNAMICPARAMETERS

sMINIMUMLOT-TO-LOTSPREADFORRELIABLEOPERATION

sVERYHIGHSWITCHINGSPEED

sTHROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”)

APPLICATIONS:

sELECTRONICBALLASTSFORFLUORESCENTLIGHTING

sSWITCHMODEPOWERSUPPLIES

DESCRIPTION

Thedevicesareismanufacturedusinghigh

voltageMultiEpitaxialPlanartechnologyforhigh

switchingspeedsandmediumvoltagecapability.

TheyuseaCellularEmitterstructurewithplanar

edgeterminationtoenhanceswitchingspeeds

whilemaintainingthewideRBSOA.®

INTERNALSCHEMATICDIAGRAM

January1999ABSOLUTEMAXIMUMRATINGS

SymbolParameterValueUnit

VCESCollector-EmitterVoltage(VBE=0)700V

VCEOCollector-EmitterVoltage(IB=0)400V

VEBOEmitter-BaseVoltage(IC=0)9V

ICCollectorCurrent4A

ICMCollectorPeakCurrent(tp<5ms)8A

IBBaseCurrent2A

IBMBasePeakCurrent(tp<5ms)4A

PtotTotalDissipationatTc=25oC75W

TstgStorageTemperature-65to150oC

TjMax.OperatingJunctionTemperature150oC123

TO-220I2PAK

TO-262

(Suffix”-1”)123

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THERMALDATA

Rthj-caseThermalResistanceJunction-caseMax1.67oC/W

ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)

SymbolParameterTestConditionsMin.Typ.Max.Unit

ICEVCollectorCut-offCurrent(VBE=-1.5V)VCE=700VVCE=700VTcase=100oC15mAmA

IEBOEmitterCut-offCurrent(IC=0)VEB=9V1mA

VCEO(sus)∗Collector-EmitterSustainingVoltage(IB=0)IC=10mA400V

VCE(sat)∗Collector-EmitterSaturationVoltageIC=1AIB=0.2AIC=2AIB=0.5AIC=4AIB=1A0.50.61VV

VBE(sat)∗Base-EmitterSaturationVoltageIC=1AIB=0.2AIC=2AIB=0.5A1.21.6VV

hFEDCCurrentGainIC=1AVCE=5VGroupAGroupBIC=2AVCE=5V15278324540

tstfRESISTIVELOADStorageTimeFallTimeIC=2AIB1=-IB2=0.4AVCC=125VTp=30µs1.50.23.0µsµs

∗ Pulsed:Pulseduration=300µs,dutycycle=1.5%Note:Productispre-selectedinDCcurrentgain(GROUPAandGROUPB).STMicroelectronicsreservestherighttoshipeithergroupsaccordingtoproductionavailability.PleasecontactyournearestSTMicroelectronicssalesofficefordeliverydetails.ST13005/STB13005-1

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SafeOperatingAreas

DCCurrentGain

CollectorEmitterSaturationVoltageDeratingCurve

DCCurrentGain

BaseEmitterSaturationVoltageST13005/STB13005-1

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InductiveFallTimeInductiveStorageTime

ResistiveFallTimeResistiveLoadStorageTime

ReverseBiasedSOAST13005/STB13005-1

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Figure1:InductiveLoadSwitchingTestCircuit.

Figure2:ResistiveLoadSwitchingTestCircuit.1)Fastelectronicswitch2)Non-inductiveResistor3)Fastrecoveryrectifier

1)Fastelectronicswitch2)Non-inductiveResistorST13005/STB13005-1

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DIM.mminch

MIN.TYP.MAX.MIN.TYP.MAX.

A4.404.600.1730.181

C1.231.320.0480.051

D2.402.720.0940.107

D11.270.050

E0.490.700.0190.027

F0.610.880.0240.034

F11.141.700.0440.067

F21.141.700.0440.067

G4.955.150.1940.203

G12.42.70.0940.106

H210.010.400.3930.409

L216.40.645

L413.014.00.5110.551

L52.652.950.1040.116

L615.2515.750.6000.620

L76.26.60.2440.260

L93.53.930.1370.154

DIA.3.753.850.1470.151

P011CTO-220MECHANICALDATAST13005/STB13005-1

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DIM.mminch

MIN.TYP.MAX.MIN.TYP.MAX.

A4.44.60.1730.181

A12.492.690.0980.106

B0.70.930.0270.036

B21.141.70.0440.067

C0.450.60.0170.023

C21.231.360.0480.053

D8.959.350.3520.368

e2.42.70.0940.106

E1010.40.3930.409

L13.113.60.5150.531

L13.483.780.1370.149

L21.271.40.0500.055

LL1B2B

DEA

C2C

A1

L2e

P011P5/ETO-262(I2PAK)MECHANICALDATAST13005/STB13005-1

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