ST13005-1
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ST13005STB13005-1
HIGHVOLTAGEFAST-SWITCHING
NPNPOWERTRANSISTORS
sMEDIUMVOLTAGECAPABILITY
sNPNTRANSISTORS
sLOWSPREADOFDYNAMICPARAMETERS
sMINIMUMLOT-TO-LOTSPREADFORRELIABLEOPERATION
sVERYHIGHSWITCHINGSPEED
sTHROUGH-HOLEI2PAK(TO-262)POWERPACKAGEINTUBE(SUFFIX”-1”)
APPLICATIONS:
sELECTRONICBALLASTSFORFLUORESCENTLIGHTING
sSWITCHMODEPOWERSUPPLIES
DESCRIPTION
Thedevicesareismanufacturedusinghigh
voltageMultiEpitaxialPlanartechnologyforhigh
switchingspeedsandmediumvoltagecapability.
TheyuseaCellularEmitterstructurewithplanar
edgeterminationtoenhanceswitchingspeeds
whilemaintainingthewideRBSOA.®
INTERNALSCHEMATICDIAGRAM
January1999ABSOLUTEMAXIMUMRATINGS
SymbolParameterValueUnit
VCESCollector-EmitterVoltage(VBE=0)700V
VCEOCollector-EmitterVoltage(IB=0)400V
VEBOEmitter-BaseVoltage(IC=0)9V
ICCollectorCurrent4A
ICMCollectorPeakCurrent(tp<5ms)8A
IBBaseCurrent2A
IBMBasePeakCurrent(tp<5ms)4A
PtotTotalDissipationatTc=25oC75W
TstgStorageTemperature-65to150oC
TjMax.OperatingJunctionTemperature150oC123
TO-220I2PAK
TO-262
(Suffix”-1”)123
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THERMALDATA
Rthj-caseThermalResistanceJunction-caseMax1.67oC/W
ELECTRICALCHARACTERISTICS(Tcase=25oCunlessotherwisespecified)
SymbolParameterTestConditionsMin.Typ.Max.Unit
ICEVCollectorCut-offCurrent(VBE=-1.5V)VCE=700VVCE=700VTcase=100oC15mAmA
IEBOEmitterCut-offCurrent(IC=0)VEB=9V1mA
VCEO(sus)∗Collector-EmitterSustainingVoltage(IB=0)IC=10mA400V
VCE(sat)∗Collector-EmitterSaturationVoltageIC=1AIB=0.2AIC=2AIB=0.5AIC=4AIB=1A0.50.61VV
VBE(sat)∗Base-EmitterSaturationVoltageIC=1AIB=0.2AIC=2AIB=0.5A1.21.6VV
hFEDCCurrentGainIC=1AVCE=5VGroupAGroupBIC=2AVCE=5V15278324540
tstfRESISTIVELOADStorageTimeFallTimeIC=2AIB1=-IB2=0.4AVCC=125VTp=30µs1.50.23.0µsµs
∗ Pulsed:Pulseduration=300µs,dutycycle=1.5%Note:Productispre-selectedinDCcurrentgain(GROUPAandGROUPB).STMicroelectronicsreservestherighttoshipeithergroupsaccordingtoproductionavailability.PleasecontactyournearestSTMicroelectronicssalesofficefordeliverydetails.ST13005/STB13005-1
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SafeOperatingAreas
DCCurrentGain
CollectorEmitterSaturationVoltageDeratingCurve
DCCurrentGain
BaseEmitterSaturationVoltageST13005/STB13005-1
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InductiveFallTimeInductiveStorageTime
ResistiveFallTimeResistiveLoadStorageTime
ReverseBiasedSOAST13005/STB13005-1
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Figure1:InductiveLoadSwitchingTestCircuit.
Figure2:ResistiveLoadSwitchingTestCircuit.1)Fastelectronicswitch2)Non-inductiveResistor3)Fastrecoveryrectifier
1)Fastelectronicswitch2)Non-inductiveResistorST13005/STB13005-1
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DIM.mminch
MIN.TYP.MAX.MIN.TYP.MAX.
A4.404.600.1730.181
C1.231.320.0480.051
D2.402.720.0940.107
D11.270.050
E0.490.700.0190.027
F0.610.880.0240.034
F11.141.700.0440.067
F21.141.700.0440.067
G4.955.150.1940.203
G12.42.70.0940.106
H210.010.400.3930.409
L216.40.645
L413.014.00.5110.551
L52.652.950.1040.116
L615.2515.750.6000.620
L76.26.60.2440.260
L93.53.930.1370.154
DIA.3.753.850.1470.151
P011CTO-220MECHANICALDATAST13005/STB13005-1
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DIM.mminch
MIN.TYP.MAX.MIN.TYP.MAX.
A4.44.60.1730.181
A12.492.690.0980.106
B0.70.930.0270.036
B21.141.70.0440.067
C0.450.60.0170.023
C21.231.360.0480.053
D8.959.350.3520.368
e2.42.70.0940.106
E1010.40.3930.409
L13.113.60.5150.531
L13.483.780.1370.149
L21.271.40.0500.055
LL1B2B
DEA
C2C
A1
L2e
P011P5/ETO-262(I2PAK)MECHANICALDATAST13005/STB13005-1
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