BLF574,112;中文规格书,Datasheet资料

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Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ Max Unit 110 - - V 1.25 1.7 2.25 V 1.35 1.85 2.35 V - - 2.8 µA 29 37.5 - A
12
1
5
34 [1]
3 5
4
2 sym117
Table 3. Ordering information
Type number Package
Name Description
BLF574
-
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA
Fig 3. Power gain as function of load power; typical values
BLF574_2
Product data sheet
/
Rev. 02 — 24 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA; PL = 400 W; f = 225 MHz.
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications I Broadcast transmitter applications
/
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
[1] Rth(j-c) is measured under RF conditions.
Typ 0.23
Unit K/W
BLF574_2
Product data sheet
/
Rev. 02 — 24 February 2009
© NXP B.V. 2009. All rights reserved.
2. Pinning information
Table 2. Pin 1 2 3 4 5
Pinning Description drain1 drain2 gate1 gate2 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efficiency = 70 %
gfs
forward transconductance
VDS = 10 V; ID = 12.5 A
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.33 A
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz. 7.1.1 1-Tone CW
30 Gp (dB)
28
26
24
001aaj127 80
30
ηD
Gp
I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
BLF574
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009
Product data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
-
56 A
−65 +150 °C
-
225 °C
Table 5. Symbol Rth(j-c)
Thermal characteristics Parameter thermal resistance from junction to case
Conditions Tcase = 80 °C; PL = 400 W
Symbol Parameter
Conditions
Min Typ Max Unit
Gp
power gain
PL = 400 W
25 26.5 28 dB
RLin
input return loss
ηD
drain efficiency
PL = 400 W PL = 400 W
13 20 - dB 66 70 - %
BLF574_2
Product data sheet
/
Rev. 02 — 24 February 2009
© NXP B.V. 2009. All rights reserved.
4 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
BLF574_2
Product data sheet
/
Rev. 02 — 24 February 2009
© NXP B.V. 2009. All rights reserved.
3 of 18
NXP Semiconductors
BLF574
HF / VHF power LDMOS transistor
Version SOT539A
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
- - 280 nA - 17 - S - 0.14 - Ω
- 1.5 - pF
- 204 - pF
- 72 - pF
Table 7. RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 1000 mA for total device; Tcase = 25 °C; unless otherwise specified; in a class-AB production test circuit.
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V; VDS = 10 V
IGSS
gate leakage current
ห้องสมุดไป่ตู้
VGS = 11 V; VDS = 0 V
500
Coss (pF)
400
001aaj126
300
200
100
0
0
10
20
30
40
50
VDS (V)
Fig 1.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per section