pmp3030

k) 过热保护（告警和跳闸） l) 定时限零序过流保护（告警和跳闸）
m) 零序方向保护 n) 失压保护 o) 低压保护 p) 过压保护 q) 过负荷保护（告警和跳闸） r) 母线 PT 断线、CT 断线
2）测控功能
1
a) 16 路遥信开入采集、装置遥信变位、事故遥信 b) 正常断路器遥控分合、小电流接地探测遥控分合 c) Iam、Ibm、Icm、P、Q、COSф、H 等模拟量的遥测 d) 积分电度，包括正向有功、正向无功、反向有功、反向无功 e) 开关事故分合次数统计及事件 SOE 等 f) 谐波分析（可选配）
3）其他功能 a) 装置描述、装置参数的远方查看； b) 8 套定值，保护定值、区号的远方查看、修改功能； c) 保护功能软压板状态的远方查看、投退； d) 装置保护开入状态的远方查看； e) 装置运行状态（包括保护动作元件的状态和装置的自检信息）的远方查 看； f) 远方对装置实现信号复归；
g) 虚遥信 h) 故障录波功能，16 套标准 COMTRADE 格式波形。
保护功能
测控功能
辅助功能
1) 2) 3) 4) 5)自带操作回路 故障录波 GPS 对时 控母断线检测 弹簧未储能检 测
七个开关遥信，检修 状态 3) 积分电度：正向有功
1) 2) 3) 4) 5)
自带操作回路 故障录波 GPS 对时 控母断线检测 弹簧未储能检
3
1) 2) 3) 4)
差动速断保护 比率差动保护 差流告警 电流速断保护（区分启动前， 启动后）
1.3 DMP3300 系列电动机保护装置功能一览表
2
DMP3300 系列电动机保护测控装置
装置型号 （适应范 围）
1) 电流速断保护（区分启动前，启 动后） 2) 过流保护 3) 反时限过流保护 4) 负序过流保护 DMP3371 （适用于 10kV 及以下三相异 8) 过热保护告警和跳闸 步电动机成套 9) 零序过流保护告警和跳闸 保护） 10) 小电流接地选线 11) 失压保护 12) 低压保护 13) 过压保护 14) 过负荷跳闸和告警 15) CT 断线告警 PT 断线告警 DMP3372 （适用于 10kV 及以下的电动 4) 机，作为内部 4) 相间短路的主 保护） 测 遥控：遥跳、遥合 CT 断线告警 3) 积分电度：无 1) 2) 3) 差动速断保护 比率差动保护 差流告警 1) 2) 遥测：无 遥信：事故总信号、 检修状态 反向无功电度 4) 遥控：遥跳、遥合 度、反向有功电度、 电度、正向无功电 5) 启动时间过长保护 6) 堵转保护 7) 启动间隔保护 1) 遥 测 ： Iam 、 Ibm 、 Icm、P、Q、cos、H 2) 遥信：事故总信号、 一个断路器位置 （双位 置遥信） ，合后位置、

DescriptionHewlett-Packard’s INA-30311 is a Silicon monolithic amplifier for applications to 1.0 GHz. Packaged in a miniature SOT-143 package,it requires very little board space.The INA-30311 uses an internally biased topology which eliminates the need for external components and provides decreased sensitiv-ity to ground inductance.The INA-30311 is designed with an output impedance that varies from near 200 Ω at lowfrequencies to near 50 Ω at higher frequencies. This provides a matching advantage for IF circuits, as well as improved power efficiency, making it suitable for battery powered designs.The INA-30311 is fabricated using HP’s 30 GHz f MAX ISOSAT TM Silicon bipolar process which uses nitride self-alignment sub-micrometer lithography, trench isolation, ion implantation, gold metallization, and polyimide intermetal dielectric and scratch protection to achieve superior performance, uniformity, and reliability.1 GHz Low Noise Silicon MMIC Amplifier Technical DataINA-30311Features• Internally Biased, Single 3 V Supply (6 mA)• 3.5 dB NF • 13 dB Gain• Unconditionally StableApplications• LNA or IF Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, and Wireless LAN ApplicationsSOT-143 Surface MountPackagePin Connections and Package MarkingEquivalent Circuit (Simplified)GNDOUTPUTINPUTV CCAbsolute Maximum RatingsAbsolute Symbol ParameterUnits Maximum [1]V CC Device Voltage, to ground V 12P in CW RF Input Power dBm +13T j Junction Temperature °C 150T STGStorage Temperature°C-65 to 150INA-30311 Electrical Specifications [3], T C = 25°C, Z O = 50 Ω, V CC = 3 VSymbol Parameters and Test ConditionsUnits Min.Typ.Max.G p Power Gain (|S 21|2) f = 900 MHz dB 1113NF Noise Figuref = 900 MHz dB 3.5P 1dB Output Power at 1 dB Gain Compression f = 900 MHz dBm -11IP 3Third Order Intercept Point f = 900 MHz dBm-2VSWR Input VSWR f = 900 MHz1.7I cc Device Current mA 6.37.5ιdGroup Delayf = 900 MHz ps 325INA-30311 Typical Scattering Parameters [3], T C = 25°C, Z O = 50 Ω, V CC = 3 VFreq.S 11S 21S 12S 22K GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang Factor 0.050.09-116.12 6.40-6-38.10.01220.57-1 4.350.100.09-216.11 6.39-12-38.20.01240.56-3 4.430.200.10-616.12 6.40-25-38.40.01280.56-7 4.410.300.13-1616.14 6.41-38-38.90.011130.55-11 4.830.400.16-2916.07 6.36-52-39.40.011190.54-14 4.880.500.18-4215.90 6.24-66-40.10.010270.52-18 5.600.600.21-5915.56 6.00-81-40.70.009400.50-20 6.580.700.22-7515.04 5.65-95-40.70.009570.47-237.260.800.24-9214.34 5.21-109-39.60.011740.46-24 6.490.900.25-10713.44 4.70-122-37.60.013860.44-24 6.231.000.26-12212.53 4.23-135-35.50.017940.43-25 5.351.200.27-14410.50 3.35-155-32.30.0241000.42-26 4.831.400.27-1628.50 2.66-173-29.60.0331010.42-27 4.431.600.27-177 6.69 2.16172-27.50.0421000.42-28 4.311.800.27173 5.01 1.78159-25.70.052990.42-30 4.222.000.27163 3.58 1.51147-24.10.062970.42-32 4.172.200.27156 2.35 1.31136-22.50.075950.42-35 3.972.400.26150 1.21 1.15126-21.40.085920.41-37 4.042.500.261470.751.09122-20.90.091910.41-393.99Note:3. Reference plane per Figure 9 in Applications Information section.Thermal Resistance [2]:θj-c = 550°C/WNotes:1. Operation of this device above any one of these limits may cause permanent damage.2. T C = 25°C (T C is defined to be thetemperature at the package pins where contact is made to the circuit board).INA-30311 Typical Performance, T C = 25°C, Z O = 50 Ω, V CC = 3 VFigure 7. Input and Output VSWR vs.Frequency.Figure 8. Supply Current vs. Voltage and Temperature.Figure 1. Power Gain vs. Frequency and Voltage.Figure 2. Noise Figure vs. Frequency and Voltage.G A I N (d B )0.10FREQUENCY (GHz)0.7201051.515 1.10.30.50.9 1.3 3.3 V 3.0 V 2.7 VN O I S E F I G U R E (d B )0.10FREQUENCY (GHz)0.74.02.01.0 1.53.0 1.10.30.50.9 1.3 2.7 V 3.0 V 3.3 V0.51.52.53.5P 1 d B (d B m )0.1-14FREQUENCY (GHz)0.70-6-10 1.5-4 1.10.30.50.9 1.33.3 V 3.0 V2.7 V -12-8-2V S W R (n :1)FREQUENCY (GHz)Figure 5. Noise Figure vs. Frequency and Temperature.Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Temperature.G A I N (d B )0.10FREQUENCY (GHz)0.7201051.515 1.10.30.50.9 1.3-40+25+85N O I S E F I G U R E (d B )0.10FREQUENCY (GHz)0.7521 1.541.10.30.50.9 1.3-40+25+853P 1 d B (d B m )0.1-12FREQUENCY (GHz)0.7-8-10-111.5-91.10.30.50.9 1.3-40+25+85Figure 3. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.Figure 4. Gain vs. Frequency and Temperature.I C C (mA )V CC (V)INA-30311 Applications InformationIntroductionThe INA-30311 is a silicon RF integrated circuit that provides an easy-to-use solution for low noise or multi-purpose gain block applications up to 1000 MHz. This two-stage amplifier design uses resistive feedback to provide flat gain over a wide frequency range. This device is assembled in a miniature, surface mount package and is intended for use in low cost wireless communication products.A unique feature of the INA-30311 is that it is designed with a 50Ωinput impedance and an output impedance that approaches 200Ωat lower frequencies. This imped-ance converting feature is very useful for applications such as receiver IF circuits in which the INA-30311 is followed by highinput impedance devices like signal processing circuits, filters, or mixed signal ICs.In addition to simplifying the match to higher impedance devices, a key benefit of the higher output impedance feature is an improvement in power efficiency.Phase Reference PlanesThe positions of the reference planes used to measureS-Parameters are shown in Figure9. As seen in the illustra-tion, the reference planes are located at the point where the package leads contact the test circuit.MATCHEDΩOUTPUT BiasingThe INA-30311 is a voltage biaseddevice and operates from a single+3 volt power supply. With acurrent drain of 6 mA, thisamplifier is suitable for use inbattery powered applications. Allbias circuitry is fully integratedinto the IC eliminating the needfor external DC components. RFperformance is very stable for3-volt battery supplies that mayrange from 2.7 to 3.3 volts,depending on battery “freshness”or state of charge in the case ofrechargeable batteries.While the INA-30311 wasdesigned for use in +3 volt batterypowered applications, theinternal bias regulation circuitryallows it to be used with anypower supply voltage from +2.7to +5 volts.Typical ConfigurationsThe way in which the INA-30311is used depends on the particularapplication and operatingfrequency.• For receiver IF amplifier appli-cations up to several hundredMHz, the relatively higher out-put impedance level of theINA-30311 may be used toadvantage when interfacingdirectly with devices havinghigher than 50Ω input imped-ances, such as certain signalprocessing or mixed signal ICs.This application is shown inFigure 10.• A second implementation,shown in Figure 11, uses asimple reactive network at theamplifier’s output to match theoutput impedance to 50 Ω.This matched output arrangementwill provide an additional 0.9 dBof gain and output power at900MHz when driving into a 50Ωstage.• The third way to use the INA-30311 is to simply cascadeseveral INA-30311’s with 50Ωstages and neglect the effects ofthe output mismatch.The 50 Ω cascade withoutimpedance matching, shown inFigure 12, trades off theimprovement in stage gain andoutput power for a moresimplified interstage circuit andreduced circuit board space.Figure 11. Impedance MatchedOutput.Figure 12. Simple Cascade withoutImpedance Matching.Figure 10. INA-30311 Driving a HighInput Impedance Stage.RF RFFigure 13. Basic Amplifier Application.900 MHz Matched ExampleThis section describes ademonstration circuit for900␣MHz that is based on thematched output configurationshown in Figure11.The output VSWR of the INA-30311 is approximately 2.6:1 at900 MHz and results in a 0.9 dBmismatch loss when used in a50Ω system. The use of a simpleimpedance matching circuit at theoutput will increase both gain andoutput power by 0.9 dB. Thenoise figure of the amplifierremains the same and does notdepend on whether or not theoutput is matched.There are many circuit topologiesthat may be used to match theoutput impedance of theINA-30311 to a 50 Ω load. Theexample presented in Figure 15 isdesigned to match the amplifier’soutput for frequencies near900␣MHz.This circuit is representative forapplications in the 800 MHzcellular or 900 MHz unregulatedfrequency bands. This exampleuses a series capacitor to resonatewith a shunt, high impedancetransmission line. The transmis-sion line is tapped at a 50 Ω levelfor the output. This circuitprovides the desired impedancetransformation with a minimumof components, using only onechip capacitor that also doublesas the output DC block.used to the amplifier to the V CCsupply, additional bypasscapacitors may be needed toprevent resonances that wouldotherwise result in undesirablegain responses. A well-bypassedV CC line is also desirable toprevent possible oscillations thatmay occur due to feedbackthrough the bias line from otherstages in a cascade.Adequate grounding is needed toobtain maximum performance.The ground pin of the INA-30311should be connected to directlyto RF ground by using platedthrough holes (vias) near thepackage terminals.FR-4 or G-10 PCB material is agood choice for most low costwireless applications. Typicalboard thickness is 0.025 or0.031␣inches. The width of 50 Ωmicrostriplines in these PCBthicknesses is also convenient formounting chip components suchas the series DC blockingcapacitors.50 Ω ExampleThe demonstration circuit in Figure14 shows the INA-30311 usedwithout output impedancematching and is an example of thecascade depicted in Figure 12. Thislayout illustrates the simplestimplementation of the INA-30311by using 50 Ω microstriplineswith DC blocking capacitors forboth the input and output. TheV CC supply connection is RFbypassed very close to the lead ofthe RFIC. Provision is also madefor an additional bypass capacitoron the V CC line near the edge ofthe PCB.Operating DetailsThe basic application of the INA-30311 is shown in Figure 13. DC blocking capacitors should be placed in series with the RF Input and RF Output to isolate adjoin-ing circuits from the internal bias voltages that are present at these terminals. The values of the blocking capacitors are deter-mined by the lowest frequency of operation for a particular applica-tion. The capacitor’s reactances are chosen to be 5% or less of the amplifier’s input or output imped-ance at the lowest operating frequency. For example, an ampli-fier to be used in an application covering the 902 to 928 MHz band would require an input blocking capacitor of at least 70pF, which is 2.5 Ω of reactance, or 5% of50␣Ω at 902MHz.The V CC connection to the amplifier must be RF bypassed by placing a capacitor to ground directly at the bias pin of the package. Like the DC blocking capacitors, the value of the V CC bypass capacitor is determined by the lowest operating frequency for the ampli-fier. This value is typically the same as that of the DC blocking capacitors. If long bias lines areINA-30311 Part Number Ordering InformationPart Number Devices per ContainerContainer INA-30311-TR13,0007" reel INA-30311-BLK100Antistatic bagFigure 14. 50 Ω Input/Output Example.Figure 15. Matched Output Example.DIMENSIONS ARE IN MILLIMETERS (INCHES)0.10 (0.004) 0.013 (0.0005)END VIEWSIDE VIEWPackage Dimensions。

VIH VIL IOH VOL VOH
SDO
电流偏移量(通道间)
dIOUT1
电流偏移量(芯片间)
dIOUT2
IOUT=64.5mA VDS=1.0V
电流偏移量 vs. 输出电压 电流偏移量 vs. 电源电压
%/dVDS %/dVDD VDS，TH
输出电压 = 1.0~3.0V，
Rext=700Ω@20mA
GFN: QFN24-4*4-0.5
产品说明
MBI5030是专为LED全彩显示面板的应用设计的驱动IC，内建可选择16位或是12位灰阶控制的脉波宽度调变功能。 MBI5030 内建16位位移缓存器可以将串行的输入资料转换成每个输出通道的灰阶像数。而且，MBI5030的16个恒流 输出通道所输出的电流值不受输出端负载电压影响并提供一致并且恒定的输出电流。MBI5030的使用者可以经由选用 不同阻值的外接电阻来调整MBI5030各输出级的电流大小。除此之外，MBI5030的使用者还可以藉由可程序化的8位 电流增益调整来调整整体LED的驱动电流。 藉由Scrambled-PWM (S-PWMTM) 的技术，MBI5030可加强脉波宽度调变的功能，并将导通的时间分散成数个较短的 导通时间，进而增加了视觉的更新率。在建立16位灰阶应用的全彩显示面板时，可藉由S-PWM™ 来减少画面的闪烁。 除此之外，MBI5030可降低对于控制器对于脉波宽度调变时钟频率的要求，使用者只需数兆赫的时间频率来达到16位 的灰阶脉波宽度调变。MBI5030可以藉由输入的影像数据来调整相对应LED的亮度。而且，MBI5030可以使每个输出 通道表现出16位(65,536灰阶)的颜色变化。此外，MBI5030可以藉由16位影像数据中用来补偿gamma修正或是LED偏 差的信息来调整每一颗LED明亮度。

PJ3000M调频广播发射机原理及故障处理一、PJ3000M调频广播发射机原理1.音频信号输入：外部音频输入接口将音频信号输入到发射机中。

2.音频处理：音频信号经过音频处理电路，包括放大、混响、均衡等处理，以提高音频信号的质量。

3.载频产生：载频产生电路将高频信号与参考信号相乘，产生RF信号。

4.调制：调制电路将音频信号与RF信号进行调制，形成调频信号。

5.功率放大：调频信号经过功率放大电路，增加信号强度。

6.天线发射：增强后的调频信号通过天线发射出去。

二、PJ3000M调频广播发射机常见故障及处理方法1.无法开机：可能原因包括电源故障、线路松动等。

处理方法为检查电源线是否插紧，检查电源线是否有断路等情况。

2.无法调频：可能原因包括音频输入故障、调频电路故障等。

处理方法为检查音频输入线路是否正常连接，检查调频电路是否有损坏。

3.信号不清晰：可能原因包括天线连接不良、调频信号损耗等。

处理方法为检查天线连接是否紧固，检查调频信号是否有损耗。

4.功率不足：可能原因包括功放电路故障、功率调节故障等。

处理方法为检查功放电路是否正常，检查功率调节器是否工作正常。

5.杂音干扰：可能原因包括线路干扰、电磁干扰等。

处理方法为检查线路是否有干扰源，检查周围环境是否有大功率电器等可能干扰的设备。

6.发热过高：可能原因包括散热器堵塞、风扇故障等。

处理方法为清洁散热器，检查风扇是否正常工作。

7.显示屏异常：可能原因包括显示屏损坏、控制电路故障等。

处理方法为更换显示屏，检查控制电路是否正常工作。

总之，PJ3000M调频广播发射机在使用过程中可能出现各种故障，对于不同的故障情况，需要进行详细的排查和诊断，及时采取相应的处理措施，以保证广播发射机的正常运行。