AZ10E142
AZ100E142 ECL/PECL 9-bit Shift Register
1630 S. STAPLEY DR., SUITE 127 • MESA, ARIZONA 85204 • USA • (480) 962-5881 • FAX (480) 890-2541
ARIZONA MICROTEK, INC.
FEATURES
• 700 MHz Minimum Shift Frequency
• 9-Bit for Byte-Parity Application
• Asynchronous Master Reset
• Dual Clocks
• Operating Range of 4.2V to 5.46V
• 75kΩ Internal Input Pulldown Resistors
• Direct Replacement for ON Semi
MC10E142 & MC100E142
DESCRIPTION
The AZ10/100E142 is a 9-bit shift register, designed with byte-parity applications in mind. The E142 performs
serial/parallel in and serial/parallel out, shifting in one direction. The nine inputs D0-D8 accept parallel input data,
while S-IN accepts serial input data. The Qn outputs do not need to be terminated for the shift operation to function.
To minimize noise and power, any Q output not used should be left unterminated.
Vishay SiliconixSUM90P10-19L
Document Number: 73474S-71207-Rev. D, 1P-Channel 100-V (D-S) MOSFETFEATURES •TrenchFET® Power MOSFETPRODUCT SUMMARY VDS (V)rDS(on) (Ω)ID (A)Qg (Typ)- 1000.019 at VGS = - 10 V - 9097 nC0.021 at VGS = - 4.5 V - 85TO-263 S GD Top View Drain Connected to Tab Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free)SGDP-Channel MOSFETNotes: a. Package Limited.b. Surface Mounted on 1" x 1" FR4 Board. c. t = 10 sec.d. Maximum under Steady State conditions is 40 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise notedParameter S
ymbol Limit Unit Drain-Source Voltage VDS- 100VGate-Source Voltage VGS± 20Continuous Drain Current (TJ = 150 °C)TC = 25 °CID- 90ATC = 125 °C- 52TA = 25 °C- 17.2b, cTA = 125 °C- 9.9b, cPulsed Drain Current IDM- 90Continuous Source-Drain Diode Current TC = 25 °CIS- 250TA = 25 °C- 9b, cAvalanche CurrentL = 0.1 mHIAS- 70Single-Pulse Avalanche EnergyEAS245mJMaximum Power DissipationTC = 25 °CPD375WTC = 125 °C125TA = 25 °C13.6b, cTA = 125 °C4.5b, cOperating Junction and Storage Temperature Range TJ, Tstg- 50 to 175°CTHERMAL RESISTANCE RATINGS Parameter S
HZ-P SeriesSilicon Epitaxial Planar Zener Diodesfor Voltage Controller & Voltage Limitter
ADE-208-123D (Z)Rev.4Sep. 2000
Features• Wide spectrum from 1.88V through 40V of zener voltage provide flexible application.• Glass package DO-41 structure ensures high reliability.Ordering InformationType No.MarkPackage CodeHZ-P SeriesType No.DO-41
Outline
1. Cathode2. AnodeCathode bandType No.12 2.0 B元器件交易网HZ-P SeriesRev.4, Sep. 2000, page 2 of 8Absolute Maximum Ratings(Ta = 25°C)ItemSymbolValueUnitPower dissipationPd0.8WJunction temperatureTj175°CStorage temperatureTstg−55 to +175°C
Electrical Characteristics(Ta = 25°C)Zener VoltageReverese CurrentDynamic ResistanceVZ (V)*1TestConditionIR (µA)TestConditionrd (Ω)TestConditionTypeGradeMinMaxIZ (mA)MaxVR (V)MaxIZ (mA)HZ2.0BP1.882.12402000.52540CP2.002.24HZ2.2BP2.082.33402000.72040CP2.202.45HZ2.4BP2.282.56402001.01540CP2.402.70HZ2.7BP2.52.9402001.01540CP2.73.1HZ3.0BP2.83.2401001.01540CP3.03.4HZ3.3BP3.13.540801.01540CP3.33.7HZ3.6BP3.43.840601.01540CP3.64.0HZ3.9BP3.74.140401.01540CP3.94.4HZ4.3BP4.04.540201.01540CP4.34.8HZ4.7BP4.44.940201.01040CP4.75.2Note:1.Tested with DC.元器件交易网HZ-P SeriesRev.4, Sep. 2000, page 3 of 8Electrical Characteristics (cont)(Ta = 25°C)Zener VoltageReverese CurrentDynamic ResistanceVZ (V)*1TestConditionIR (µA)TestConditionrd (Ω)TestConditionTypeGradeMinMaxIZ (mA)MaxVR (V)MaxIZ (mA)HZ5.1BP4.85.440201.0840CP5.15.7HZ5.6BP5.36.040201.5840CP5.66.3HZ6.2BP5.86.640203.0640CP6.27.0HZ6.8BP6.47.240203.5640CP6.87.7HZ7.5BP7.07.940204.0440CP7.58.4HZ8.2BP7.78.740205.0440CP8.29.3HZ9.1BP8.59.640206.0640CP9.110.2HZ10BP9.410.640107.0640CP10.011.2HZ11BP10.411.620108.0820CP11.012.3HZ12BP11.412.620109.0820CP12.013.5HZ13BP12.414.1201010.01020CP13.315.0HZ15BP13.815.6201011.01020CP14.716.5HZ16BP15.317.1201012.01220CP16.218.3HZ18BP16.819.1201013.01220CP18.020.3HZ20BP18.821.2201015.01420CP20.022.4Note:1.Tested with DC.元器件交易网HZ-P SeriesRev.4, Sep. 2000, page 4 of 8Electrical Characteristics (cont)(Ta = 25°C)Zener VoltageReverese CurrentDynamic ResistanceVZ (V)*1TestConditionIR (µA)TestConditionrd (Ω)TestConditionTypeGradeMinMaxIZ (mA)MaxVR (V)MaxIZ (mA)HZ22BP20.823.3101017.01410CP22.024.5HZ24BP22.825.6101019.01610CP24.027.6HZ27BP25.128.9101021.01610CP27.030.8HZ30BP28.032.0101023.01810CP30.034.0HZ33BP31.035.0101025.01810CP33.037.0HZ36BP34.038.0101027.02010CP36.040.0Notes:1.Tested with DC.2.Type No. is as follows; HZ2.0BP, HZ2.0CP, • • • HZ36BP, HZ36CP.元器件交易网HZ-P SeriesRev.4, Sep. 2000, page 5 of 8Main Characteristic
1EZ110D5
THRU
1EZ200D51.0 W Silicon
Zener Diodes100 to 200 VoltsFeatures • Zener Voltage 100V to 200V • Silicon Planar Power Zener Diodes • Low profile package • Glass passivated junction Maximum Ratings
Symbol Value Units Peak Pulse Power Dissipation on TA=50 oC (1) Derate above 50 oC PD 1.0 6.67 W mW/ oC Junction Temperature TJ 150 oC Storage Temperature Range TSTG -55 to 150 o
C
Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Value Unit Peak Forward Surge Current (2) IFSM 10 A Maximum Forward Voltage @ IF=200mA VF 1.2 V NOTE: (1) Mounted on 5.0mm2 (.013mm thick) land areas. (2) Measured on 8.0ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum. Mechanical Data • Case: Molded plastic, DO-41 • Polarity: Color band denotes cathode end • Weight: 0.012 ounce, 0.3 gram DO-41
