2256-23L中文资料

写 防 护 护 （ WP＃ ） 写防护护（WP＃）引脚可用于防止状态寄存器被写入.用于 与状态一起注册块防护护（BP0,BP1,BP2和BP3）位和状态寄存器 防护护（SRP）位,部分或整个存储器阵列可以是硬件防护护.该WP＃功能 仅适用于标准SPI和双SPI操作,当在四路SPI,该引脚为串行 数据IO（DQ 2）为四I / O操作.
图一接线图
CS#
1
DO (DQ 1)
2
WP# (DQ 2)
3
VSS
4
8 VCC 7 NC (DQ 3) 6 CLK 5 DI (DQ 0)
8 - 引脚SOP / PDIP
CS# 1 DO (DQ 1) 2 WP# (DQ 2) 3
VSS 4
8 VCC 7 NC (DQ 3) 6 CLK 5 DI (DQ 0)
引脚名称符号引脚名称串行时钟输入串行数据输入数据输入输出0串行数据输出数据输入输出1芯片使能写防护护数据输入输出2不连接数据输入输出3电源电压27
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EN25Q64
64兆 位 串 行 闪 存 与 4K字 节 统 一 部 门
特征
单电源工作
- 全电压范围：2.7-3.6伏
工业温度范围
概述
该EN25Q64是一个64兆位（8192K字节）串行闪存,具有先进写防护护 机制.所述EN25Q64支持标准串行外围接口（SPI）,和一个高
高性能双输出和四I / O使用SPI接口：串行时钟,片选,串行DQ
DQ1(DO), DQ 2（WP＃）和DQ 3（NC）.高达50MHz SPI时钟频率被支持,允许 为100MHz时使用等效时钟速率双输出和200MHz为四路输出
- 通过写防护护所有或存储器部分

1)Valid for one branch – Gültig für einen Brückenzweig2)Max. case temperature T C = 120/C – Max. Gehäusetemperatur T C = 120/C34628.02.2002Three-Phase Si-Bridge RectifiersDreiphasen-Si-BrückengleichrichterNominal current 25 ANennstromRepetitive peak reverse voltage 50…1600 VPeriodische Spitzensperrspannung Plastic case with alu-bottomKunststoffgehäuse mit Alu-Boden Dimensions 28.5 x 28.5 x 10 [mm]AbmessungenWeight approx. – Gewicht ca.21 gCompound has classification UL94V-0Vergußmasse UL94V-0 klassifiziertStandard packaging: bulk see page 22Standard Lieferform: lose im Karton s. Seite 22Recognized Product – Underwriters Laboratories Inc.® File E175067Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067Maximum ratings GrenzwerteType Typ max. alternating input voltage max. EingangswechselspannungV VRMS [V]Repetitive peak reverse voltage Periodische SpitzensperrspannungV RRM [V] 1)DB 25-0053550DB 25-0170100DB 25-02140200DB 25-04280400DB 25-06420600DB 25-08560800DB 25-107001000DB 25-128001200DB 25-149001400DB 25-1610001600Repetitive peak forward current f > 15 Hz I FRM 100 A 2)Periodischer SpitzenstromPeak forward surge current, 50 Hz half sine-wave T A = 25/CI FSM350 AStoßstrom für eine 50 Hz Sinus-Halbwelle1)Valid for one branch – Gültig für einen Brückenzweig 34728.02.2002Rating for fusing, t <10 ms T A = 25/Ci 2t 600 A 2s Grenzlastintegral, t <10 msOperating junction temperature – Sperrschichttemperatur T j – 50…+150/C Storage temperature – LagerungstemperaturT S– 50…+150/CCharacteristicsKennwerteMax. current with cooling fin 300 cm 2T A = 50/C R-load I FAV 25.0 A Dauergrenzstrom mit Kühlblech 300 cm 2C-load I FAV 25.0 A Forward voltage – Durchlaßspannung T j = 25/C I F = 12.5 A V F < 1.05 V 1)Leakage current – SperrstromT j = 25/CV R = V RRMI R < 10 :A Isolation voltage terminals to caseV ISO >2500 V Isolationsspannung Anschlüsse zum Gehäuse Thermal resistance junction to caseR thC< 2.4 K/W Wärmewiderstand Sperrschicht – Gehäuse Admissible torque for mounting 10-32 UNF 18 ± 10% lb.in Zulässiges AnzugsdrehmomentM 52 ± 10% Nm。

1950
11.2
20.0
dB
NF
Noise Figure
1950
2.7
3.7
dB
VD
Device Operating Voltage
3.0
3.25
3.5
V
ID
Device Operating Current
31
35
39
mA
RTH, j-l Thermal Resistance (junction to lead)
Noise Figure (dB)
25
10
P1dB (dBm)
OIP3 (dBm)
20
TLEAD=+25ºC
15
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
5
TLEAD=+25ºC
0
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
303 South Technology Court Broomfield, CO 80021
Gain & Return Loss vs. Frequency
V = 3.25 V, I = 35 mA (Typ.)
D
D
32
0
GAIN
24
-10
IRL
16
-20
ORL
8
-30
0
-40
0
1
2
3
4
5
Frequency (GHz)
Product Features • Available in Lead Free, RoHS Compliant

DD250/S – DD256/S25A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODESingle Phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.CharacteristicSymbol DD250/S DD251/S DD252/S DD253/S DD254/S DD255/S DD256/S Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWM V R 50100200300400500600V RMS Reverse VoltageV R(RMS)3570140210280350420V Average Rectified Output Current @T C = 150°C I O25ANon-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)I FSM 300A Forward Voltage @I F = 25A V FM 1.0V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM 5.0500µA Typical Junction Capacitance (Note 1)C j 300pF Typical Thermal Resistance (Note 2)R JC 1.0°C/W Operating and Storage Temperature RangeT J , T STG-65 to +175°CNote: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.2. Thermal Resistance: Junction to case, single side cooled.WTEORDERING INFORMATIONProduct No.Package TypeShipping QuantityDD2509.5mm Dish Press-Fit 2000 Units/Box DD250S 8.4mm Dish Press-Fit 2000 Units/Box DD2519.5mm Dish Press-Fit 2000 Units/Box DD251S 8.4mm Dish Press-Fit 2000 Units/Box DD2529.5mm Dish Press-Fit 2000 Units/Box DD252S 8.4mm Dish Press-Fit 2000 Units/Box DD2539.5mm Dish Press-Fit 2000 Units/Box DD253S 8.4mm Dish Press-Fit 2000 Units/Box DD2549.5mm Dish Press-Fit 2000 Units/Box DD254S 8.4mm Dish Press-Fit 2000 Units/Box DD2559.5mm Dish Press-Fit 2000 Units/Box DD255S 8.4mm Dish Press-Fit 2000 Units/Box DD2569.5mm Dish Press-Fit 2000 Units/Box DD256S8.4mm Dish Press-Fit2000 Units/Box1. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.2.To order Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, DD250-LF.Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.We power your everyday.Won-Top Electronics Co., Ltd.No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417Email: sales@Internet: 。