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RFL2N06中文资料

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5-1SemiconductorFeatures•2A, 50V and 60V•rDS(ON)= 0.95Ω•SOA is Power-Dissipation Limited•Nanosecond Switching Speeds•Linear Transfer Characteristics•High Input Impedance•Majority Carrier Device•Related Literature-TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”DescriptionThese are N-Channel enhancement mode silicon gatepower field effect transistors designed for applications suchas switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.These types can be operated directly from integratedcircuits.Formerly developmental type TA09378.

Symbol

PackagingJEDEC TO-205AFOrdering InformationPART NUMBERPACKAGEBRANDRFL2N05TO-205AFRFL2N05RFL2N05TO-205AFRFL2N05NOTE:When ordering, include the entire part number.GD

S

DRAIN(CASE)SOURCEGATEJanuary 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.Copyright © Harris Corporation 1997File Number1497.2RFL2N05,RFL2N06

2A, 50V and 60V, 0.95 Ohm,N-Channel Power MOSFETs元器件交易网www.cecb2b.com

5-2Absolute Maximum RatingsTC = 25oC, Unless Otherwise SpecifiedRFL2N05RLF2N06UNITSDrain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS5060VDrain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . .VDGR5060VGate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS±20±20VDrain Current, RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID22APulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM1010AMaximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD8.338.33WLinear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.06670.0667W/oCOperating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . TJ, TSTG-55 to 150-55 to 150oCMaximum Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .TLPackage Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .Tpkg300260300260oCoCCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation ofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.NOTE:1.TJ= 25oC to 125oC.Electrical SpecificationsTC = 25oC, Unless Otherwise SpecifiedPARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITSDrain to Source Breakdown VoltageBVDSSID = 250µA, VGS = 0RFL2N0550--VRFL2N0660--VGate to Threshold VoltageVGS(TH)VGS = VDS, ID = 250µA, (Figure 8)2-4VZero-Gate Voltage Drain CurrentIDSSVDS = 0.8 x Rated BVDSS,TC = 25oC--1µATC = 125oC--25µAGate to Source Leakage CurrentIGSSVGS =±20V, VDS = 0--±100nADrain to Source On Voltage (Note 2)VDS(ON)ID = 1A, VGS = 10V--0.95VID = 2A, VGS = 10V--2.0VID = 4A, VGS = 15V--4.8VDrain to Source On Resistance (Note 2)rDS(ON)ID = 1A, VGS = 10V, (Figures 6, 7)--0.95ΩForwardTransconductance(Note 2)gfsID = 1A, VDS = 10V, (Figure 10)400--STurn-On Delay Timetd(ON)ID≈ 1A, VDD = 30V, RGS= 50Ω,VGS = 10V, (Figures 11, 12, 13)-615nsRise Timetr-1430nsTurn-Off Delay Timetd(OFF)-1630nsFall Timetf-3050nsInput CapacitanceCISSVGS = 0V, VDS = 25V,f = 1MHz, (Figure 9)--200pFOutput CapacitanceCOSS--85pFReverse-Transfer CapacitanceCRSS--30pFThermal Resistance Junction to CaseRθJC--15oC/WSource to Drain Diode SpecificationsPARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITSSource to Drain Diode Voltage(Note 2)VSDISD = 1A--1.4VDiode Reverse Recovery TimetrrISD = 2A, dISD/dt = 50A/µs-100-nsNOTE:2.Pulse test:pulse width≤ 300µs, duty cycle≤ 2%.RFL2N05, RFL2N06元器件交易网www.cecb2b.com

5-3Typical Performance CurvesUnless Otherwise Specified

FIGURE 1.NORMALIZED POWER DISSIPATION vsCASE TEMPERATUREFIGURE 2.MAXIMUM CONTINUOUS DRAIN CURRENT vsCASE TEMPERATURE

FIGURE 3.FORWARD BIAS SAFE OPERATING AREAFIGURE 4.SATURATION CHARACTERISTICS

FIGURE 5.TRANSFER CHARACTERISTICSFIGURE 6.DRAIN TO SOURCE ON RESISTANCE vs DRAINCURRENTTC, CASE TEMPERATURE (oC)POWER DISSIPATION MULTIPLIER

0.002550751001500.20.40.60.81.01.2

1250255075100125150TC, CASE TEMPERATURE (oC)ID, DRAIN CURRENT (A)2.5

1.51.00.52.0

1.00

0.10

0.0110.00

101001000VDS, DRAIN TO SOURCE VOLTAGE (V)ID, DRAIN CURRENT (A)

1OPERATION IN THIS AREALIMITED BY rDS(ON)

RFL2N06TJ= MAX RATED

RFL2N05108642

01234567ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)250µs PULSE TESTDUTY CYCLE≤2%VGS = 20V

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2N60L-TF3-R中文资料

2N60L-TF3-R中文资料

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET

1 of 8 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-053,E 2 Amps,󰀁600 Volts N-CHANNEL MOSFET 󰂄 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 󰂄 FEATURES * RDS(ON) = 3.8Ω@VGS = 10V. * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (Crss = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 󰂄 SYMBOL 1.Gate3.Source2.Drain TO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 2N60L󰂄 ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2N60-TA3-T 2N60L-TA3-T TO-220 G D S Tube 2N60-TF3-T 2N60L-TF3-T TO-220F G D S Tube 2N60-TM3-T 2N60L-TM3-T TO-251 G D S Tube 2N60-TN3-R 2N60L-TN3-R TO-252 G D S Tape Reel 2N60-TN3-T 2N60L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source 2N60L-TA3-T(1)Packing Type(2)Package Type(1) T: Tube, R: Tape Reel(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251, TN3: TO-252(3) L: Lead Free Plating, Blank: Pb/Sn(3)Lead Plating 元器件交易网2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 QW-R502-053,E 󰂄 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOLRATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A TC = 25°C 2.0 A Drain Current Continuous TC = 100°C ID 1.26 A Drain Current Pulsed (Note 2) IDP 8.0 A Repetitive(Note 2) EAR 4.5 mJ Avalanche Energy Single Pulse(Note 3) EAS 140 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TC = 25°C 45 W Total Power Dissipation Derate above 25°C PD 0.36 W/󰄊 Junction Temperature TJ +150 󰄊 Storage Temperature TSTG -55 ~ +150 󰄊 Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 󰂄 THERMAL DATA PARAMETER PACKAGESYMBOLRATINGS UNIT TO-251 112 TO-252 112 TO-220 54 Thermal Resistance Junction-Ambient TO-220F θJA 54 TO-251 12 TO-252 12 TO-220 4 Thermal Resistance Junction-Case TO-220F θJc 4 󰄊/W 󰂄 ELECTRICAL CHARACTERISTICS (TJ =25℃, unless Otherwise specified.) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNITOff Characteristics Drain-Source Breakdown Voltage BVDSSVGS = 0V, ID = 250µA 600 V VDS = 600V, VGS = 0V 10 µA Zero Gate Voltage Drain Current IDSS VDS = 480V, TC = 125°C 100µA Forward VGS = 30V, VDS = 0V 100nA Gate-Body Leakage CurrentReverse IGSS VGS = -30V, VDS = 0V -100nA Breakdown Voltage Temperature Coefficient 󰂶BVDSS/T󰂶J ID = 250 µA 0.4 V/󰄊On Characteristics Gate Threshold Voltage VGS(TH)VDS = VGS, ID = 250µA 2.0 4.0V Static Drain-Source On-Resistance RDS(ON)VGS = 10V, ID =1A 3.8 5 Ω Forward Transconductance gFS VDS = 50V, ID = 1A (Note 1) 2.25 S Dynamic Characteristics Input Capacitance CISS 270 350pF Output Capacitance COSS 40 50 pF Reverse Transfer Capacitance CRSS VDS =25V, VGS =0V, f =1MHz 5 7 pF 元器件交易网2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 8 QW-R502-053,E 󰂄 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNITSwitching Characteristics Turn-On Delay Time tD (ON) 10 30 ns Rise Time tR 25 60 ns Turn-Off Delay Time tD(OFF) 20 50 ns Fall Time tF VDD =300V, ID =2.4A, RG=25Ω (Note 1,2) 25 60 ns Total Gate Charge QG 9.0 11 nC Gate-Source Charge QGS 1.6 nC Gate-Drain Charge QGD VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) 4.3 nC Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A 1.4V Continuous Drain-Source Current ISD 2.0A Pulsed Drain-Source Current ISM 8.0A Reverse Recovery Time tRR 180 ns Reverse Recovery Charge QRR VGS = 0 V, ISD = 2.4A, di/dt = 100 A/µs (Note1) 0.72 µCNote: 1. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 2. Essentially Independent of Operating Temperature 元器件交易网2N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 8 QW-R502-053,E 󰂄 TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T.LVDDDriverVGSRG-VDSD.U.T.+*dv/dt controlled by RG* ISD controlled by pulse period* D.U.T.-Device Under TestP. W.PeriodD=VGS(Driver)ISD(D.U.T.)IFM, Body Diode Forward Currentdi/dtIRMBody Diode Reverse CurrentBody Diode Recovery dv/dtBody Diode Forward Voltage DropVDD10VVDS(D.U.T.)-+VGS=P.W.PeriodFig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms 元器件交易网

RM6资料

RM6资料

xDSL POTs Splitter< Pin Type: RM Series> Type: RM6

Please refer to the sales offices on our website for a representative near you 1/1 ◆ Product Description ・20.0×20.0mm Max.(L×W),13.0mm Max. Height. ◆ Feature ・Excellent Longitudinal Balance. ・For use with Legerity’s Itergrated Voice and Data(IVD) solution. ・Customized inductance values available. ・RoHS Compliance. ◆ Dimensions (mm) ◆ Land Pattern (mm) ◆Schematics(Bottom) ◆ Specification Inductance (mH) Part

Name

20kHz

0.1Vac,0Adc

20kHz

0.1Vac,0.12Adc

20kHz

0.1Vac,0.23Adc

LL

100kHz,

0.1Vac

THD

50kHz, 12.3Vrms LB 200Hz-3200Hz D.C.R.(Ω) Pri/SecT15101 6.44 Min. 6.30 Min. 4.0 Min. 8.0μH Max.-85dB Max. 65dB Min. 11/11 T15102 8.74 Min. 8.46 Min. 4.0 Min. 8.0μH Max.-85dB Max. 65dB Min. 13.6/13.6 元器件交易网

2N2722中文资料

2N2722中文资料

70Dual TransistorsTO-78 CasePD@ TA=25oC=600mW Total (Both Die Equal Power)TYPE NO.DESCRIPTIONICVCBOVCEOhFE@ IC @ VCEVCE (SAT)@ ICfTMATCHING(mA)(V)(V)(V)(mA)(V)(V)(mA)(MHz)hFEVBE*TYPMAXMINMINMINMAXMAXMIN%(mV)2N2060NPN AMPL/SWITCH5001006050150105.01.25060105.02N2060ANPN AMPL/SWITCH5001006050150105.00.65060103.02N2223NPN AMPL/SWITCH5001006050200105.01.2505020152N2223ANPN AMPL/SWITCH5001006050200105.01.25050105.02N2453NPN LOW NOISE5060301506001.05.01.05.060103.02N2453ANPN LOW NOISE5080501506001.05.01.05.060103.02N2480NPN AMPL/SWITCH5007535303501.05.01.3505020102N2480ANPN AMPL/SWITCH5008040502001.05.01.25050205.02N2639NPN LOW NOISE304545503000.015.01.01040105.02N2640NPN LOW NOISE304545503000.015.01.0104020102N2641NPN LOW NOISE304545503000.015.01.01040- -- -2N2642NPN LOW NOISE3045451003000.015.01.01040105.02N2643NPN LOW NOISE3045451003000.015.01.0104020102N2644NPN LOW NOISE3045451003000.015.01.01040- -- -2N2652NPN AMPL/SWITCH50010060502001.05.01.25060153.02N2652ANPN AMPL/SWITCH50010060502001.05.01.25060103.02N2722NPN LOW NOISE404545502500.0015.01.010100105.02N2903NPN LOW NOISE5060301256251.05.01.05.06020102N2903ANPN LOW NOISE5060301256251.05.01.05.060105.02N2913NPN LOW NOISE304545602400.015.00.351.060- -- -2N2914NPN LOW NOISE3045451506000.015.00.351.060- -- -2N2915NPN LOW NOISE304545602400.015.00.351.060103.02N2915ANPN LOW NOISE304545602400.015.00.351.060101.52N2916NPN LOW NOISE3045451506000.015.00.351.060103.02N2916ANPN LOW NOISE3045451506000.015.00.351.060101.52N2917NPN LOW NOISE304545602400.015.00.351.060205.02N2918NPN LOW NOISE3045451506000.015.00.351.060205.02N2919NPN LOW NOISE306060602400.015.00.351.060103.02N2919ANPN LOW NOISE306060602400.015.00.351.060101.52N2920NPN LOW NOISE3060601506000.015.00.351.060103.02N2920ANPN LOW NOISE3060601506000.015.00.351.060101.52N3726PNPLOW NOISE30045451353501.05.00.2550200105.02N3727PNPLOW NOISE30045451353501.05.00.2550200102.52N3806PNPLOW NOISE5060601504501.05.00.20.1100- -- -2N3807PNPLOW NOISE5060603009001.05.00.20.1100- -- -2N3808PNPLOW NOISE5060601504501.05.00.20.1100205.02N3809PNPLOW NOISE5060603009001.05.00.20.1100205.02N3810PNPLOW NOISE5060601504501.05.00.20.1100103.02N3810APNPLOW NOISE5060601504501.05.00.20.11005.01.52N3811PNPLOW NOISE5060603009001.05.00.20.1100103.02N3811APNPLOW NOISE5060603009001.05.00.20.11005.01.52N4015PNPAMPL/SWITCH30060601353501.05.00.2550200105.02N4016PNPAMPL/SWITCH30060601353501.05.00.2550200102.52N5794NPN AMPL/SWITCH6007540100300150100.3150250- -- -2N5796PNPAMPL/SWITCH6006060100300150100.4150200- -- -MD708NPN SATSWITCH200401540200101.00.5100300- -- -MD708ANPN SATSWITCH200401540200101.00.5100300105.0MD708BNPN SATSWITCH200401540200101.00.51003002010元器件交易网

IRFI540N中文资料

IRFI540N中文资料

HEXFET® Power MOSFETIRFI540NPD - 9.1361A

3/16/98VDSS = 100VRDS(on) = 0.052ΩID = 20ASDGTO-220 FULLPAKlAdvanced Process TechnologylIsolated PackagelHigh Voltage Isolation = 2.5KVRMS 󰂅lSink to Lead Creepage Dist. = 4.8mmlFully Avalanche Rated

ParameterMin.Typ.Max.UnitsRθJCJunction-to-Case––––––––2.8RθJAJunction-to-Ambient––––––––65Thermal ResistanceParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V20ID @ TC = 100°CContinuous Drain Current, VGS

@ 10V14AIDMPulsed Drain Current 󰂁󰂆110PD @TC = 25°CPower Dissipation54WLinear Derating Factor0.36W/°CVGSGate-to-Source Voltage±20VEASSingle Pulse Avalanche Energy 󰂂󰂆300mJIARAvalanche Current󰂁󰂆16AEARRepetitive Avalanche Current󰂁5.4mJdv/dtPeak Diode Recovery dv/dt 󰂃󰂆5.0V/nsTJOperating Junction and-55 to + 175 TSTGStorage Temperature Range°CSoldering Temperature, for 10 seconds300 (1.6mm from case)Mounting torque, 6-32 or M3 screw.10 lbf•in (1.1N•m)Absolute Maximum RatingsDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientdevice for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additionalinsulating hardware in commercial-industrial applications.The moulding compound used provides a high isolationcapability and a low thermal resistance between the taband external heatsink. This isolation is equivalent to usinga 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip orby a single screw fixing.PRELIMINARY