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ULN2003中文资料

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ULN2003/ULN2003A中文资料ULN2003/ULN2003A中文资料

在自动化密集的的场合会有很多被控元件如继电器，微型电机，风机，电磁阀，空调，水处理等元件及设备，这些设备通常由CPU所集中控制，由于控制系统不能直接驱动被控元件，这需要由功率电路来扩展输出电流以满足被控元件的电流，电压。ULN2XXXX高压大电流达林顿晶体管阵列系列产品就属于这类可控大功率器件，由于这类器件功能强、应用范围语广。因此，许多公司都生产高压大电流达林顿晶体管阵列产品，从而形成了各种系列产品。838电子ULN2003是什么-

原理：LN2003也是一个7路反向器电路，即当输入端为高电平时ULN2003输出端为低电平，当输入端为低电平时ULN2003输出端为高电平，继电器得电吸合。如图九所示

功能特点：

高电压输出50V

输出钳位二极管

输入兼容各种类型的逻辑电路

应用继电器驱动器

ULN200X逻辑图 DISSIPATION RATING TABLE耗散评级表

PACKAGE封装 TA=25℃ POWER RATING 额定功率 DERATING FACTOR ABOVE功耗系数 TA=25℃ TA=85℃ POWER RATI定功率

D 950 mW 838电子 7.6 mW/℃ 494 mW

N 1150 mW 9.2 mW/℃ 598 mW

electrical characteristics, 电气特性（除非另有说明）TA = 25℃ (unless otherwise

noted)

PARAMETER 参数 测试图 TEST CONDITIONS 测试条件 ULN2001A ULN20位最小 典型 最大 最小 型大

VI(on) On-state input voltage 输入电压 6 VCE=2V, IC =300mA - - - -

VCE(sat) Collector-emitter saturation voltage集电极-发射极饱和电压 5 II=250μA,IC=100mA - 0.9 1.1 -

II=350μA, IC=200mA - 1 1.3 -

II=500μA, IC=350mA - 1.2 1.6 -

VF

Clamp forward voltage 正向钳位电压 8 IF = 350mA - 1.7 2 -

ICEX Collector cutoff current集电极截止电流 1 VCE = 50V, II = 0 - - 50 - - 50 μA

2 VCE=50V,TA=

70℃ II=0 - 100 - - 100

-

VI=6V - - - - - 500

II(off)

Off state input current关闭状态下输入电流 3 VCE=50V,TA=70℃ IC=500μA, 50 65 - 50 65 - μA

II Input current 输入电流 4 VI = 17 V - - - - 0.82 1.25 mA

IR Clamp reverse current 反向钳位电流 7 VR=50V, TA=70℃ - - 100 - - 100 μA

VR = 50 V - - 50 - - 50

hFE Static forward-current transfer ratio 静态正向电流传输比 5 VCE=2V, IC =350mA 1000 - - - - - -

Ci Input capacitance 输入电容 - VI = 0, f = 1MHz 15 25 15 25 pF

electrical characteristics, 电气特性（除非另有说明）TA = 25℃ (unless otherwise

noted)

PARAMETER 参数 测试图 TEST CONDITIONS 测试条件 ULN2003A ULN20最小 典型 最大 最小 大VI(on) On state input voltage输入电压 66 VCE=2V IC=125mA

IC=200mA - - 2.4 -

IC=250mA - - 2.7 -

IC=275mA - - - - IC=300mA - - 3 - - -

IC=350mA 8

VCE(sat) ittCollector-emitter saturation

voltage集电极发射极饱和电压 5 II = 250μA, IC=100mA - 0.9 1.1 0.9 1.1

V II = 350μA, IC =200mA - 1 1.3 1 1.3

II = 500μA, IC=350mA - 1.2 1.6 1.2 1.6

ICEX Collector cutoff current 集电极截止电流 1 VCE = 50V, II = 0 - - 50 - 50 μA

22 VCE=50V,TA=70℃ II = 0 - - 100

- - 100

-

VI = 1V - - - - - 500

VF Clamp forward voltage 正向钳位电压 8 IF = 350mA - 1.7 2 - 1.7 2 V

II(off) Off state input

current 关闭状态下输入电流 33 VCE = 50 V, CE , TA = 70℃ IC = 500μA 50 65 - 50 65 - μA

II Input current输入电流 4 VI = 3.85 V - 0.93 1.35 - - -

mA VI = 5 V - - - 0.35 0.5

VI = 12 V - - - 1 1.45

IR Clamp reverse current 反向钳位电流 77 VR = 50 V - - 50 - - 50

μA

VR = 50 V, TA = 70℃ - - 100 - - 100

Ci Input capacitance输入电容 - VI = 0, f =1MHz - 15 25 15 25 pF electrical characteristics, 电气特性（除非另有说明）TA = 25℃ (unless otherwise

noted)

PARAMETER 参数 测试图 TEST CONDITIONS 测试条件 ULQ2003A ULQ2004最小 典型 最大 最小 典型VI(on) On state input voltage输入电压 6 VCE=2V IC=125mA

IC=200mA - - 2.7 - -

IC=250mA - - 2.9 - -

IC=275mA - - - - -

IC=300mA - - 3 - -

IC=350mA

VCE(sat) ittCollector-emitter saturation voltage集电极发射极饱和电压 5 II = 250μA, IC=100mA - 0.9 1.1 0.9 II = 350μA, IC =200mA - 1 1.3 1

II = 500μA, IC=350mA - 1.2 1.6 1.2ICEX Collector cutoff current 集电极截止电流 1 VCE = 50V, II = 0 - - 50 -

A22 VCE=50V II = 0 - - 100

- -

VI = 1V - - - - -

VF Clamp forward voltage 正向钳位电压 8 IF =350mA - 1.7 2 - 1.7II(off) Off state input current

关闭状态下输入电流 3 VCE =50V, IC=500μA 30 65 - 50 65 AII Input current输入电流 4 VI = 3.85V - 0.93 1.35 - -

VI = 5V - - - 0.3VI = 12V - - - 1 1.45

IR Clamp reverse current 反向钳位电流 7 VR = 50V TA =25℃ - - 100 - - 50

μA

VR = 50V - - 100 - - 100

Ci Input capacitance输入电容 - VI = 0, f=1MHz - 15 25 15 25 pF

switching characteristics, 开关特性TA = 25℃

PARAMETER 参数 TEST CONDITIONS 测试条件 ULN2001A,ULN ULN2003A,UL 位

最小 典型

tPLH Propagation delay time, low- to high-level output传播延迟时间，从低到高输出 See Figure 9 - 0.25

s

tPHL Propagation delay time, high- to low-level output 传播延迟时间，从高到低输出 See Figure 9 - 0.25

s

VOH High-level output voltage after switching 输出高电平电压 VS=50V, IO≈300mA, See Figure 10 VS–20 -

switching characteristics over recommended operating conditions (unless otherwise noted)开关特性的建议运行条件（除非另有说明）

PARAMETER 参数838电子 TEST CONDITIONS 测试条ULQ2003A,ULQ2004A 件 最小 典型 最大

tPLH Propagation delay time, low- to high-level output 传播延迟时间，从低到高输出 See Figure 9 - 1 10 μs

tPHL Propagation delay time, high- to low-level output 传播延迟时间，从高到低输出 See Figure 9 - 1 10 μs

VOH High-level output voltage after switching 输出高电平电压 VS=50V, IO≈300mA, See

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RA30H0608M-01中文资料

RA30H0608M-01中文资料

MITSUBISHI RF MOSFET MODULE RA30H0608M 68-88MHz 30W 12.5V MOBILE RADIO

RA30H0608M MITSUBISHI ELECTRIC 7 April 2003 1/9 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS

TENTATIVE DESCRIPTION The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 68-88MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H0608M-E01 RA30H0608M-01 (Japan - packed without desiccator) Antistatic tray, 10 modules/tray BLOCK DIAGRAM 3 1 5 元器件交易网MITSUBISHI RF POWER MODULE RA30H0608M

APD0805-000中文资料

APD0805-000中文资料

1Skyworks Solutions,Inc.• Phone [781] 376-3000 • Fax [781] 376-3100 • sales@ • 200075 Rev.C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice.• February 17,2005APD Series:Silicon PIN Diode ChipsDATA SHEET

Features●Established Skyworks PIN diode process●For switch and attenuator applications●Low capacitance designs to 0.05 pF●Voltage ratings to 100 V●Chip size smaller than 15 mils square

DescriptionSkyworks APD Series of silicon PIN diode chips are designed foruse as switch and attenuator devices in high performance hybridmicrowave integrated circuits.These PIN diode designs areuseful over a wide range of frequencies from below 100 MHz tobeyond 30 GHz.These devices utilize Skyworks well establishedsilicon technology resulting in high resistivity and tightly con-trolled I region width PIN diodes.APD0505-00 throughAPD0810-000 are primarily designed for fast speed throughmoderate speed switch applications.They have low resistanceand capacitance at zero bias and reverse bias.The thick I regionAPD2220-000 is primarily designed for low distortion attenuator

uln2003工作原理

uln2003工作原理

uln2003工作原理

ULN2003是一种常用的继电器驱动器件，它由7个高电平电流驱动通道组成。每个通道包含一个开关二极管和一个开关晶体管，用来驱动继电器或其他高电平负载。ULN2003的工作原理如下：

1. 控制信号：通过连接到ULN2003的输入端口，来控制每个输出通道的开关状态。当输入信号为高电平（通常为5V），相应的输出通道就会打开，允许电流流过。

2. 驱动方式：当输入信号为高电平时，ULN2003的内部晶体管会导通，允许电流从所驱动的负载中流过。输出端口上的电压将近似于电源电压（通常为12V-24V），以便足够驱动负载。

3. 集成二极管：每个输出通道内置了一个二极管，用于避免反向电压的产生。当由于负载的感应性质而发生电压反向时，二极管会导通，从而保护驱动器和其他组件。

4. 高电平电流：ULN2003的输出通道可以提供较高的电流输出，通常在500mA-600mA范围内。这使得它能够驱动多种继电器、电磁阀、步进电机等高负载设备。

总结来说，ULN2003是一种通过控制输入信号来驱动高电平负载的集成电路。当输入信号为高电平时，输出通道会导通，允许电流通过，从而驱动负载工作。同时，内置的二极管还能保护电路免受反向电压的损坏。

proteus元件中英文对照表.

proteus元件中英文对照表.

1.analog ics 模拟集成器件8个子类：

amplifier 放大器

comparators 比较器

display drivers 显示驱动器

filters 滤波器

miscellaneous 混杂器件

regulators 三端稳压器

timers 555定时器

voltage references 参考电压

2，capacitors CAP电容，23个分类别

animated 可显示充放电电荷电容

audio grade axial 音响专用电容

axial lead polypropene 径向轴引线聚丙烯电容

axial lead polystyrene 径向轴引线聚苯乙烯电容

ceramic disc 陶瓷圆片电容

decoupling disc 解耦圆片电容

high temp radial 高温径向电容

high temp axial electrolytic高温径向电解电容

metallised polyester film 金属聚酯膜电容

metallised polypropene 金属聚丙烯电容

metallised polypropene film 金属聚丙烯膜电容