▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device▼ Pb-Free package is available132SOT– 23 (TO–236AB)LP2301LT1GMaximum Ratings and Thermal Characteristics (T A = 25o C unless otherwise noted)Symbol Limit Unit V DS -20V GS ± 8I D -2.3I DM -8TA = 25o C 0.9 TA = 75oC0.57T J , T stg -55 to 150oCR qJC Junction-to-Ambient Thermal Resistance (PCB mounted)2)R qJA140Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation2. 1-in 22oz Cu PCB board3. Guaranteed by design; not subject to production testingContinuous Drain Current Gate-Source Voltage Maximum Power DissipationOperating Junction and Storage Temperature Range oC/WJunction-to-Case Thermal ResistanceParameterV A WDrain-Source Voltage P D Pulsed Drain Current 1) 20V P-Channel Enhancement-Mode MOSFETV DS = -20VR DS(ON), Vgs@-4.5V, Ids@-2.8A = 100R DS(ON), Vgs@-2.5V, Ids@-2.0A = 150FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOMm Ωm ΩLP2301LT1GELECTRICAL CHARACTERISTICS Parameter SymbolTest Condition Min Typ Max UnitStaticDrain-Source Breakdown Voltage BV DSS V GS = 0V, I D = -250uA -20--V Drain-Source On-State Resistance R DS(on)V GS = -4.5V, I D = -2.8A 69100Drain-Source On-State Resistance R DS(on)V GS = -2.5V, I D = -2.0A 83150m ΩGate Threshold Voltage V GS(th)V DS =V GS , I D = -250uA -0.45-0.95V Zero Gate Voltage Drain Current I DSS V DS = -9.6V, V GS = 0V -1uA Gate Body Leakage I GSS V GS = ±8V, V DS = 0V±100nA Gate ResistanceRg ΩForward Transconductance g fsV DS = -5V, I D = -4.0A6.5SDynamic3)Total Gate Charge Q g 15.23Gate-Source Charge Q gs 5.49Gate-Drain Charge Q gd 2.74Turn-On Delay Time t d(on)17.28Turn-On Rise Time t r 3.73Turn-Off Delay Time t d(off)36.05Turn-Off Fall Time t f 6.19Input Capacitance C iss 882.51Output CapacitanceC oss 145.54Reverse Transfer Capacitance C rss97.26Source-Drain Diode Max. Diode Forward Current I S -2.4A Diode Forward VoltageV SDI S = -0.75A, V GS = 0V-0.8-1.2VNote : Pulse test: pulse width <= 300us, duty cycle<= 2%ns V DS = -6V, V GS = 0Vf = 1.0 MHz pF V DS = -6V, I D = -2.8AV GS = -4.5VnCV DD = -6V, R L = 6ΩΙD = −1Α, V GEN = -4.5VR G = 6Ωm ΩNOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,19822. CONTROLLING DIMENSION: INCH.INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.11020.1197 2.803.04B 0.04720.0551 1.20 1.40C 0.03500.04400.89 1.11D 0.01500.02000.370.50G 0.07010.0807 1.78 2.04H 0.00050.00400.0130.100J0.00340.00700.0850.177K 0.01400.02850.350.69L 0.03500.04010.89 1.02S 0.08300.1039 2.10 2.64V0.01770.02360.450.60SOT -23VLP2301LT1GReel DimensionsMetric Dimensions Govern –– English are in parentheses for reference onlyEMBOSSED TAPE AND REEL DATAFOR DISCRETESAT MaxOutside Dimension Measured at EdgeGInside Dimension Measured Near Hub20.2mm Min (.795’’)1.5mm Min(.06’’)13.0mm ± 0.5mm(.512 ±.002’’)50mm Min (1.969’’)Full RadiusSize A Max GT Max 8 mm330mm (12.992’’)8.4mm+1.5mm, -0.0(.33’’+.059’’, -0.00)14.4mm (.56’’)LESHAN RADIO COMPANY, LTD.Storage ConditionsTemperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred )Recommended Period: One year after manufacturing(This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation)元器件交易网Shi p ment S p ecification10 Reel12 Inner Box/Carton 360KPCS/CartonDim(Unit:mm)Dim(Unit:mm)10Reel/Inner Box30KPCS/Inner Box460mm*400mm*420mm8000PCS/Reel (SOT-723,SOD-723)3000PCS/Reel80KPCS/Inner Box (SOT-723,SOD-723)960KPCS/Carton (SOT-723,SOD-723)LESHAN RADIO COMPANY, LTD.元器件交易网。
