IRF830A

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www.irf.com13/20/03

IRF830ASMPS MOSFET

HEXFET® Power MOSFETlSwitch Mode Power Supply ( SMPS )lUninterruptable Power Supply

lHigh speed power switching

Benefits

Applications

lLow Gate Charge Qg results in Simple Drive RequirementlImproved Gate, Avalanche and dynamic dv/dt RuggednesslFully Characterized Capacitance and Avalanche Voltage and CurrentlEffective Coss specified ( See AN 1001)

VDSSRds(on) maxID

500V1.40Ω5.0A

Typical SMPS Topologies:l Two transistor Forwardl Half Bridge and Full Bridge

ParameterMax.UnitsID @ TC = 25°CContinuous Drain Current, VGS @ 10V5.0ID @ TC = 100°CContinuous Drain Current, VGS @ 10V3.2AIDMPulsed Drain Current 󰀃20PD @TC = 25°CPower Dissipation74WLinear Derating Factor0.59W/°CVGSGate-to-Source Voltage ± 30Vdv/dtPeak Diode Recovery dv/dt 󰀄5.3V/nsTJOperating Junction and-55 to + 150TSTGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°C

Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum RatingsTO-220ABSDG

PD- 91878D

Notes 󰀁 through 󰀃 are on page 8IRF830A

2www.irf.comParameterMin.Typ.Max.Units ConditionsgfsForward Transconductance2.8––––––SVDS = 50V, ID = 3.0AQgTotal Gate Charge–––––– 24 ID = 5.0A

QgsGate-to-Source Charge––––––6.3nCVDS = 400VQgdGate-to-Drain ("Miller") Charge––––––11VGS = 10V, See Fig. 6 and 13 󰀅td(on)Turn-On Delay Time–––10–––VDD = 250VtrRise Time–––21–––ID = 5.0Atd(off)Turn-Off Delay Time–––21–––RG = 14Ω

tfFall Time–––15–––RD = 49Ω,See Fig. 10 󰀅CissInput Capacitance–––620–––VGS = 0VCossOutput Capacitance–––93–––VDS = 25VCrssReverse Transfer Capacitance–––4.3–––pFƒ = 1.0MHz, See Fig. 5CossOutput Capacitance–––886–––VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

CossOutput Capacitance–––27–––VGS = 0V, VDS = 400V, ƒ = 1.0MHzCoss eff.Effective Output Capacitance–––39–––VGS = 0V, VDS = 0V to 400V 󰀆

Dynamic @ TJ = 25°C (unless otherwise specified)ns

ParameterTyp.Max.UnitsEASSingle Pulse Avalanche Energy󰀇–––230mJIARAvalanche Current󰀃–––5.0AEARRepetitive Avalanche Energy󰀃–––7.4mJ

Avalanche Characteristics

SDG

ParameterMin.Typ.Max.Units ConditionsISContinuous Source CurrentMOSFET symbol(Body Diode)––––––showing theISM

Pulsed Source Currentintegral reverse

(Body Diode) 󰀃––––––p-n junction diode.VSDDiode Forward Voltage––––––1.5VTJ = 25°C, IS = 5.0A, VGS = 0V 󰀅trrReverse Recovery Time–––430650nsTJ = 25°C, IF = 5.0AQrrReverse RecoveryCharge–––1.622.4µCdi/dt = 100A/µs 󰀅tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics5.020A

ParameterTyp.Max.UnitsRθJCJunction-to-Case–––1.7RθCSCase-to-Sink, Flat, Greased Surface0.50–––°C/WRθJAJunction-to-Ambient–––62

Thermal Resistance

Static @ TJ = 25°C (unless otherwise specified)ParameterMin.Typ.Max.Units ConditionsV(BR)DSSDrain-to-Source Breakdown Voltage500––––––VVGS = 0V, ID = 250µA∆V(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA

RDS(on)Static Drain-to-Source On-Resistance––––––1.4ΩVGS = 10V, ID = 3.0A 󰀅VGS(th)Gate Threshold Voltage2.0–––4.5VVDS = VGS, ID = 250µA––––––25µAVDS = 500V, VGS = 0V––––––250VDS = 400V, VGS = 0V, TJ = 125°CGate-to-Source Forward Leakage––––––100VGS = 30VGate-to-Source Reverse Leakage––––––-100nAVGS = -30V

IGSS

IDSSDrain-to-Source Leakage CurrentIRF830A

www.irf.com3Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 3. Typical Transfer Characteristics0.010.1 1 10 1000.1 1 10 10020µs PULSE WIDTHT = 25CJ

°

TOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)I , Drain-to-Source Cur

r

ent (A)

DSD4.5V0.1

1

10 100

1 10 10020µs PULSE WIDTHT = 150CJ

°

TOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)I , Drain-to-Source Cur

r

ent (A)

DSD4.5V

0.1 1 10 1004.05.06.07.08.0V = 50V20µs PULSE WIDTHDS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GSDT = 25 CJ°

T = 150 CJ°

-60-40-200204060801001201401600.00.51.01.5

2.02.5

T , Junction Temperature( C)R , Drain-to-Source On Resistance

(Normalized)

JDS(on)°V=I=GSD10V

5.0A