Power MOSFETIRFI630G, SiHFI630GVishay SiliconixFEATURES•Isolated Package•H igh Voltage Isolation = 2.5 kV RMS (t = 60 s;f = 60 Hz)•Sink to Lead Creepage Distance = 4.8 mm•Dynamic dV/dt Rating •Low Thermal Resistance•Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 9.9 mH, R G = 25 Ω, I AS = 5.9 A (see fig. 12).c.I SD ≤ 5.9 A, dI/dt ≤ 120 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)200R DS(on) (Ω)V GS = 10 V 0.40Q g (Max.) (nC)43Q gs (nC)7.0Q gd (nC)23ConfigurationSingleORDERING INFORMATIONPackage TO-220 FULLPAK Lead (Pb)-free IRFI630GPbF SiHFI630G-E3 SnPbIRFI630G SiHFI630GABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARAMETER SYMB O L LIMIT UNIT Drain-Source Voltage V DS200VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D5.9A T C = 100 °C3.7Pulsed Drain Current a I DM 24Linear Derating Factor0.28W/°C Single Pulse Avalanche Energy b E AS 230mJ Repetitive Avalanche Current a I AR 5.9 A Repetitive Avalanche Energy a E AR 3.5mJ Maximum Power Dissipation T C = 25 °CP D 35WPeak Diode Recovery dV/dt cdV/dt 5.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may applyIRFI630G, SiHFI630GVishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPARAMETER SYMBL TYP.MAX.UNIT Maximum Junction-to-Ambient R thJA -65°C/WMaximum Junction-to-Case (Drain)R thJC- 3.6IRFI630G, SiHFI630GVishay SiliconixFig. 4 - Normalized On-Resistance vs. TemperatureIRFI630G, SiHFI630GVishay SiliconixFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageIRFI630G, SiHFI630GVishay SiliconixFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 12b - Unclamped Inductive WaveformsIRFI630G, SiHFI630GVishay SiliconixFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRFI630G, SiHFI630GVishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91148.Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92DISCRETEMOS FET 2N7002 60V,0.2A SOT-23DISCRETEMOS FET IRF510A 100V,5.6A TO-220DISCRETEMOS FET IRF520A 100V,9.2A TO-220DISCRETEMOS FET IRF530A 100V,14A TO-220DISCRETEMOS FET IRF540A 100V,28A TO-220DISCRETEMOS FET IRF610A 200V,3.3A TO-220DISCRETEMOS FET IRF620A 200V,5A TO-220DISCRETEMOS FET IRF630A 200V,9A TO-220DISCRETEMOS FET IRF634A 250V,8.1A TO-220DISCRETEMOS FET IRF640A 200V,18A TO-220DISCRETEMOS FET IRF644A 250V,14A TO-220DISCRETEMOS FET IRF650A 200V,28A TO-220DISCRETEMOS FET IRF654A 250V,21A TO-220DISCRETEMOS FET IRF720A 400V,3.3A TO-220MOS FET IRF730A 400V,5.5A TO-220DISCRETEMOS FET IRF740A 400V,10A TO-220DISCRETEMOS FET IRF750A 400V,15A TO-220DISCRETEMOS FET IRF820A 500V,2.5A TO-220DISCRETEMOS FET IRF830A 500V,4.5A TO-220DISCRETEMOS FET IRF840A 500V,8A TO-220DISCRETEMOS FET IRF9520 TO-220DISCRETEMOS FET IRF9540 TO-220DISCRETEMOS FET IRF9610 TO-220DISCRETEMOS FET IRF9620 TO-220DISCRETEMOS FET IRFP150A 100V,43A TO-3PDISCRETEMOS FET IRFP250A 200V,32A TO-3PDISCRETEMOS FET IRFP450A 500V,14A TO-3PDISCRETEMOS FET IRFR024A 60V,15A D-PAKDISCRETEMOS FET IRFR120A 100V,8.4A D-PAKMOS FET IRFR214A 250V,2.2A D-PAKDISCRETEMOS FET IRFR220A 200V,4.6A D-PAKDISCRETEMOS FET IRFR224A 250V,3.8A D-PAKDISCRETEMOS FET IRFR310A 400V,1.7A D-PAKDISCRETEMOS FET IRFR9020TF D-PAKDISCRETEMOS FET IRFS540A 100V,17A TO-220FDISCRETEMOS FET IRFS630A 200V,6.5A TO-220FDISCRETEMOS FET IRFS634A 250V,5.8A TO-220FDISCRETEMOS FET IRFS640A 200V,9.8A TO-220FDISCRETEMOS FET IRFS644A 250V,7.9A TO-220FDISCRETEMOS FET IRFS730A 400V,3.9A TO-220FDISCRETEMOS FET IRFS740A 400V,5.7A TO-220FDISCRETEMOS FET IRFS830A 500V,3.1A TO-220FDISCRETEMOS FET IRFS840A 500V,4.6A TO-220FDISCRETEMOS FET IRFS9Z34 -60V,12A TO-220FMOS FET IRFSZ24A 60V,14A TO-220FDISCRETEMOS FET IRFSZ34A 60V,20A TO-220FDISCRETEMOS FET IRFU110A 100V,4.7A I-PAKDISCRETEMOS FET IRFU120A 100V,8.4A I-PAKDISCRETEMOS FET IRFU220A 200V,4.6A I-PAKDISCRETEMOS FET IRFU230A 200V,7.5A I-PAKDISCRETEMOS FET IRFU410A 500V I-PAKDISCRETEMOS FET IRFU420A 500V,2.3A I-PAKDISCRETEMOS FET IRFZ20A TO-220DISCRETEMOS FET IRFZ24A 60V,17A TO-220DISCRETEMOS FET IRFZ30 TO-220DISCRETEMOS FET IRFZ34A 60V,30A TO-220DISCRETEMOS FET IRFZ40 TO-220DISCRETEMOS FET IRFZ44A 60V,50A TO-220DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220FMOS FET IRLSZ14A 60V,8A,Logic TO-220FDISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220DISCRETEMOS FET SFP36N03 30V,36A TO-220DISCRETEMOS FET SFP65N06 60V,65A TO-220DISCRETEMOS FET SFP9540 -100V,17A TO-220DISCRETEMOS FET SFP9634 -250V,5A TO-220DISCRETEMOS FET SFP9644 -250V,8.6A TO-220DISCRETEMOS FET SFP9Z34 -60V,18A TO-220DISCRETEMOS FET SFR9214 -250V,1.53A D-PAKDISCRETEMOS FET SFR9224 -250V,2.5A D-PAKDISCRETEMOS FET SFR9310 -400V,1.5A D-PAKDISCRETEMOS FET SFS9630 -200V,4.4A TO-220FDISCRETEMOS FET SFS9634 -250V,3.4A TO-220FDISCRETEMOS FET SFU9220 -200V,3.1A I-PAKMOS FET SSD2002 25V N/P Dual 8SOPDISCRETEMOS FET SSD2019 20V P-ch Dual 8SOPDISCRETEMOS FET SSD2101 30V N-ch Single 8SOPDISCRETEMOS FET SSH10N80A 800V,10A TO-3PDISCRETEMOS FET SSH10N90A 900V,10A TO-3PDISCRETEMOS FET SSH5N90A 900V,5A TO-3PDISCRETEMOS FET SSH60N10 TO-3PDISCRETEMOS FET SSH6N80A 800V,6A TO-3PDISCRETEMOS FET SSH70N10A 100V,70A TO-3PDISCRETEMOS FET SSH7N90A 900V,7A TO-3PDISCRETEMOS FET SSH9N80A 800V,9A TO-3PDISCRETEMOS FET SSP10N60A 600V,9A TO-220DISCRETEMOS FET SSP1N60A 600V,1A TO-220DISCRETEMOS FET SSP2N90A 900V,2A TO-220DISCRETEMOS FET SSP35N03 30V,35A TO-220MOS FET SSP3N90A 900V,3A TO-220DISCRETEMOS FET SSP4N60A 600V,4A TO-220DISCRETEMOS FET SSP4N60AS 600V,4A TO-220DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220DISCRETEMOS FET SSP5N90A 900V,5A TO-220DISCRETEMOS FET SSP60N06 60V,60A TO-220DISCRETEMOS FET SSP6N60A 600V,6A TO-220DISCRETEMOS FET SSP70N10A 100V,55A TO-220DISCRETEMOS FET SSP7N60A 600V,7A TO-220DISCRETEMOS FET SSP7N80A 800V,7A TO-220DISCRETEMOS FET SSP80N06A 60V,80A TO-220DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAKDISCRETEMOS FET SSR2N60A 600V,1.8A D-PAKDISCRETEMOS FET SSR3055A 60V,8A D-PAKDISCRETEMOS FET SSS10N60A 600V,5.1A TO-220FMOS FET SSS2N60A 600V,1.3A TO-220FDISCRETEMOS FET SSS3N80A 800V,2A TO-220FDISCRETEMOS FET SSS3N90A 900V,2A TO-220FDISCRETEMOS FET SSS4N60A 600V,3.5A TO-220(F/P)DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220(F/P)DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220FDISCRETEMOS FET SSS4N90AS 900V,2.8A TO-220FDISCRETEMOS FET SSS5N80A 800V,3A TO-220FDISCRETEMOS FET SSS6N60A 600V, TO-220(F/P)。
常用三极管型号及参数晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应IRF440 500V 8A 125W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BUZ11A 50V 25A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN2SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿）2SB669 70V 4A 40W * * PNP(达林顿）晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型TIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUS13A 1000V 15A 175W * * NPNBUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPNBU2506 1500V 7A 50W * * NPNBU932R 500V 15A 150W * * NPNBU806 400V 8A 60W * * NPNBU406 400V 7A 60W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BF458 250V 0.1A 10W * * NPNBD682 100V 4A 40W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型MJ10015 400V 50A 200W * * NPNMJ10012 400V 10A 175W * * NPN(达林顿)MJ4502 90V 30A 200W * * PNPMJ3055 60V 15A 115W * * NPNMJ2955 60V 15A 115W * * PNPMN650 1500V 6A 80W * * NPNBUX98A 400V 30A 210W * * NPNBUX84 800V 2A 40W * * NPNBUW13A 1000V 15A 150W * * NPNBUV48A 450V 15A 150W * * NPNBUV28A 225V 10A 65W * * NPNBUV26 90V 14A 65W * * NPNBUT12A 450V 10A 125W * * NPNBUT11A 1000V 5A 100W * * NPNBUS14A 1000V 30A 250W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BD681 100V 4A 40W * * NPNBD244 45V 6A 65W * * PNPBD243 45V 6A 65W * * NPNBD238 100V 2A 25W * * PNPBD237 100V 2A 25W * * NPNBD138 60V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD135 45V 1.5A 12.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPN BC546 80V 0.2A 0.5W * * NPNBC338 50V 0.8A 0.6W * * NPNBC337 50V 0.8A 0.6W * * NPNBC327 50V 0.8 0.6W * * PNPBC307 50V 0.2AA 0.3W * * PNP。
9011,9012,9013,9014,8050,8550三极管的区别9011 NPN 30V 30mA 400mW 150MHz 放大倍数20-809012 PNP 50V 500mA 600mW 低频管放大倍数30-909013 NPN 20V 625mA 500mW 低频管放大倍数40-1109014 NPN 45V 100mA 450mW 150MHz 放大倍数20-908050 NPN 25V 700mA 200mW 150MHz 放大倍数30-1008550 PNP 40V 1500mA 1000mW 200MHz 放大倍数40-140详情如下：90系列三极管参数90系列三极管大多是以90字为开头的，但也有以ST90、C或A90、S90、SS90、UTC90开头的，它们的特性及管脚排列都是一样的。
9011 结构：NPN集电极-发射极电压30V集电极-基电压50V射极-基极电压5V集电极电流0.03A耗散功率0.4W结温150℃特怔频率平均370MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989012 结构：PNP集电极-发射极电压-30V集电极-基电压-40V射极-基极电压-5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009013 结构：NPN集电极-发射极电压25V集电极-基电压45V射极-基极电压5V集电极电流0.5A耗散功率0.625W结温150℃特怔频率最小150MHZ放大倍数：D64-91 E78-112 F96-135 G122-166 H144-220 I190-3009014 结构：NPN集电极-发射极电压45V集电极-基电压50V射极-基极电压5V集电极电流0.1A耗散功率0.4W结温150℃特怔频率最小150MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009015 结构：PNP集电极-发射极电压-45V集电极-基电压-50V射极-基极电压-5V集电极电流0.1A耗散功率0.45W结温150℃特怔频率平均300MHZ放大倍数：A60-150 B100-300 C200-600 D400-10009016 结构：NPN集电极-发射极电压20V集电极-基电压30V射极-基极电压5V集电极电流0.025A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-1989018 结构：NPN集电极-发射极电压15V集电极-基电压30V射极-基极电压5V集电极电流0.05A耗散功率0.4W结温150℃特怔频率平均620MHZ放大倍数：D28-45 E39-60 F54-80 G72-108 H97-146 I132-198三极管85508550是一种常用的普通三极管。
