G9014中文资料
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PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)5962-9680101Q2A ACTIVE LCCC FK201TBD Call TI Level-NC-NC-NC 5962-9680101QCA ACTIVE CDIP J141TBD Call TI Level-NC-NC-NC 5962-9680101QDA ACTIVE CFP W141TBD Call TI Level-NC-NC-NC 5962-9680101VCA ACTIVE CDIP J141TBD Call TI Call TI5962-9680101VDA ACTIVE CFP W141TBD Call TI Call TISN74AHCT14D ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DBLE OBSOLETE SSOP DB14TBD Call TI Call TISN74AHCT14DBR ACTIVE SSOP DB142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DBRE4ACTIVE SSOP DB142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DE4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DGVR ACTIVE TVSOP DGV142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DGVRE4ACTIVE TVSOP DGV142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DR ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DRE4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14DRG4ACTIVE SOIC D142500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14N ACTIVE PDIP N1425Pb-Free(RoHS)CU NIPDAU Level-NC-NC-NCSN74AHCT14NSR ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14NSRE4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14NSRG4ACTIVE SO NS142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14PW ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14PWE4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14PWG4ACTIVE TSSOP PW1490Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AHCT14PWLE OBSOLETE TSSOP PW14TBD Call TI Call TISN74AHCT14PWR ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14PWRE4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMSN74AHCT14PWRG4ACTIVE TSSOP PW142000Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74AHCT14RGYR ACTIVE QFN RGY141000Green(RoHS&CU NIPDAU Level-2-260C-1YEAROrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)no Sb/Br)SNJ54AHCT14FK ACTIVE LCCC FK201TBD Call TI Level-NC-NC-NC SNJ54AHCT14J ACTIVE CDIP J141TBD Call TI Level-NC-NC-NC SNJ54AHCT14W ACTIVE CFP W141TBD Call TI Level-NC-NC-NC(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-The planned eco-friendly classification:Pb-Free(RoHS)or Green(RoHS&no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all6substances,including the requirement that lead not exceed0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green(RoHS&no Sb/Br):TI defines"Green"to mean Pb-Free(RoHS compatible),and free of Bromine(Br)and Antimony(Sb)based flame retardants(Br or Sb do not exceed0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The 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TPO414中文资料1:三端DC-DC脉宽调制开关。
2:产品亮点。
分离转换开关的低成本替代品。
只有较少的15个元件,降低成本,提高可靠性。
允许12毫米以下更小更轻的所有表面装载元件解决方案。
3:在反击式拓扑中有80%的能效。
内置的启动和电流限制,减少DC电流损耗。
低电容的MOSFET(金属氧化物半导体场效应晶体管)CMOS(互补金属氧化物半导体)控制器/门驱动器的消耗只有7Mw.70%的最大占空比最大限度的降低了传导损耗。
4:简化设计,缩短上市时间集成的脉宽调制控制器和大功率的MOSFET(金属氧化物半导体场效应晶体管)只需要一个补偿电容。
旁路和启动/自动重启的功能。
5:系统电平错误保护特征自动重启和逐周期电流限制(逐周期电流感测)即时性电流限制功能。
处理初级和次级的错误。
在线的片锁热关断保护整个系统,预防过载。
6:高度灵活,多功能实现降压,升压,反激式和正激式拓扑。
轻松接口,同时包含OPTO和初级反馈。
支持连续和不连续的运作模式。
指定用于DC16V以下输入。
7:说明TOPS开关系列,实现只有3个终端,为所有DC-DC所必须的功能:高电压N沟道功率MOSFET(金属氧化物半导体场效应晶体管),包含受控的启动门驱动,电压模式的脉宽调节控制器有内部集成的120KHZ的震荡器。
高电压启动偏置电路,能隙带派生参考,并联分流稳压器,误差放大器电路是为环路补偿和错误保护的,相比分离的MOSFET 和控制器或字激的开关转换器解决方案,TOPS开关集成电路能降低总成本,元件的数量,尺寸,和重量,同时提高效率和系统可靠性,这个器件非常适合电信,电报,和其他DC-DC的高达21W的输出功率。
在内部,SMD-8的引线框架,使用6个引脚将热量从芯片传递到电路板上,减少了散热片的成本。
8:典型应用9:输出能力:10:引脚功能描述。
漏极引脚:输出MOSFET的漏极连接,在启动运行时候,通过内部开关式的高压电流源。
提供内部的偏置电流。