SGM44600中文资料

4Ω, High Speed, Low Voltage SGM44600 Dual, DPDT Analog SwitchREV. A SG Microelectronics Co, LtdTel: 86/10/51798160/80SGM446002ORDERING INFORMATIONMODEL PIN- PACKAGE SPECIFIED TEMPERATURERANGE ORDERING NUMBER PACKAGE MARKING PACKAGE OPTION SGM44600TQFN-16 (3mm × 3mm)- 40°C to +85°CSGM44600YTQ16/TR44600Tape and Reel, 3000ABSOLUTE MAXIMUM RATINGSV + to GND.........................................................................0V to +6V Analog, Digital voltage range….....................-0.3V to (V + + 0.3V)Continuous Current NO, NC, or COM ...........................±200mAPeak Current NO, NC, or COM .......................................±350mAOperating Temperature Range.............................- 40°C to +85°CJunction Temperature...........................................................+150°C Storage Temperature...............................................- 65°C to +150°CLead Temperature (soldering, 10s)........................................+260°C ESD Susceptibility HBM............................................................................................ 2000V MM. (200V)Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.PIN DESCRIPTIONNAME TQFN PIN FUNCTION V + 14 Power supply GND 6 Ground IN 2 Digital control pin to connect the COM terminal to the NO or NC terminals N.C. 10 Not internally connected. COM X 16, 4, 8, 12 Common terminal NO X 15, 3, 7, 11 Normally-open terminal NC X 1, 5, 9, 13 Normally-closed terminalNote: NO X , NC X and COM X terminal may be an input or output.ELECTRICAL CHARACTERISTICS(V + = +4.5V to +5.5V, GND = 0V, V IH = +1.6V, V IL = +0.6V, T A = - 40°C to + 85°C. Typical values are at V + = +5.0V, T A = + 25°C, unless otherwise noted.)PARAMETER SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS ANALOG SWITCH Analog Signal RangeV NO , V NC , V COM- 40°C to +85°C 0 V +V +25°C 46 ΩOn-Resistance R ON V + = 4.5V, V NO or V NC = 1.2V,I COM = -100mA, Test Circuit 1 - 40°C to +85°C 7 Ω +25°C 0.4 2.5Ω On-Resistance Match BetweenChannels∆R ON V + = 4.5V, V NO or V NC = 1.2V, I COM = -100mA, Test Circuit 1 - 40°C to +85°C 3 Ω +25°C 23 ΩOn-Resistance Flatness R FLAT(ON) V + = 4.5V, V NO or V NC = 1.2V, I COM = -100mA, Test Circuit 1- 40°C to +85°C 3.5Ω Source OFF Leakage current I NC(OFF), I NO(OFF)V + = 5.5V, V NO or V NC = 3.3V/ 0.3V,V COM = 0.3V/ 3.3V- 40°C to +85°C 1 µA Channel ON Leakage current I NC(ON), I NO(ON), I COM(ON) V + = 5.5V, V COM = 0.3V/ 3.3V, V NO or V NC = 0.3V/ 3.3V, or floating- 40°C to +85°C1µADIGITAL INPUTS Input High Voltage V INH - 40°C to +85°C 1.6 V Input Low Voltage V INL- 40°C to +85°C 0.5V Input Leakage CurrentI IN V + = 5.5V, V IN = 0V or 5.5V- 40°C to +85°C1µADYNAMIC CHARACTERISTICS Turn-On Time t ON +25°C 29.5 nsTurn-Off Timet OFF V IH = 3V, V IL = 0V, Test Circuit2+25°C 29.5 ns Break-Before-Make Time Delay t D V IH = 3V, V IL = 0V, Test Circuit4 +25°C10.0nsCharge Injection,QV IN = GND, R G = 0Ω,C L = 1.0nF, Q = C L x V OUT,V IH = 3V, V IL = 0V, Test Circuit3 +25°C 4.8 pC 1MHz +25°C -75 dB Off Isolation O ISOV BIAS = 2.1V , V IN = 0dBm V IH = 3V, V IL = 0V, Test Circuit510MHz +25°C -551MHz +25°C -100 dB Channel-to-Channel Crosstalk X TALK V BIAS = 2.1V , V IN = 0dBm V IH = 3V, V IL = 0V,Test Circuit610MHz +25°C -60 Bandwidth –3 dB BW V BIAS = 2.1V , V IN = 0dBm,V IH = 3V, V IL = 0V, Test Circuit7+25°C 300MHzChannel ON Capacitance C NC(ON), C NO(ON),C COM(ON)+25°C 43.0 pFPOWER REQUIREMENTS Power Supply Range V +- 40°C to +85°C 1.8 5.5V Power Supply CurrentI +V + = 5.5V, V IN = 0V or V +- 40°C to +85°C1µASpecifications subject to changes without notice.ELECTRICAL CHARACTERISTICS(V + = +2.7V to +3.6V, V IH = +1.6 V, V IL = +0.4V, T A = - 40°C to +85°C. Typical values are at V + = +3.0V, T A = + 25°C, unless otherwise noted.)PARAMETER SYMBOL CONDITIONS TEMP MIN TPY MAX UNITS ANALOG SWITCH Analog Signal RangeV NO , V NC , V COM- 40°C to +85°C 0 V +V +25°C 1015Ω On-Resistance R ON V + = 2.7V, V NO or V NC = 1.2V,I COM = -10mA, Test Circuit 1 - 40°C to +85°C 18Ω +25°C 1 3 Ω On-Resistance Match BetweenChannels∆R ON V + = 2.7V, V NO or V NC = 1.2V, I COM = -100mA, Test Circuit 1 - 40°C to +85°C 4 Ω +25°C 6 9 ΩOn-Resistance Flatness R FLAT(ON) V + = 2.7V, V NO or V NC = 1.2V, I COM = -100mA, Test Circuit 1- 40°C to +85°C 12Ω Source OFF Leakage current I NC(OFF), I NO(OFF)V + = 3.6V, V NO or V NC = 3.3V / 0.3V,V COM = 0.3V/ 3.3V- 40°C to +85°C 1 µA Channel ON Leakage current I NC(ON), I NO(ON), I COM(ON) V + = 3.6V, V COM = 0.3V/ 3.3V, V NO or V NC = 0.3V/ 3.3V, or floating- 40°C to +85°C1µADIGITAL INPUTS Input High Voltage V INH - 40°C to +85°C 1.5 V Input Low Voltage V INL- 40°C to +85°C 0.4V Input Leakage CurrentI IN V + = 5.5V, V IN = 0V or 3.6V- 40°C to +85°C1µADYNAMIC CHARACTERISTICS Turn-On Time t ON +25°C 38.0 nsTurn-Off Timet OFF V IH = 1.5V, V IL = 0V, Test Circuit2+25°C 45.0 ns Break-Before-Make Time Delay t D V IH = 1.5V, V IL = 0V, Test Circuit4 +25°C5.6nsCharge Injection,QV IN = GND, R G = 0Ω,C L = 1.0nF, Q = C L x V OUT,V IH = 1.5V, V IL = 0V, Test Circuit3 +25°C 2.6 pC1MH +25°C -75 dB Off Isolation O ISOV BIAS = 1.5V , V IN = 0dBm V IH = 1.5V, V IL = 0V, Test Circuit510MHz +25°C -55dB 1MHz +25°C -100 dB Channel-to-Channel Crosstalk X TALK V BIAS = 1.5V , V IN = 0dBm V IH = 1.5V, V IL = 0V,Test Circuit610MHz +25°C -60 dB Bandwidth –3 dB BW V BIAS = 1.5V , V IN = 0dBm,V IH = 1.5V, V IL = 0V, Test Circuit7+25°C 300MHzChannel ON Capacitance C NC(ON), C NO(ON),C COM(ON)+25°C 43.0 pFSpecifications subject to changes without notice.TYPICAL PERFORMANCE CHARACTERISTICSTEST CIRCUITSTest Circuit 1. On ResistanceV OUTV NO or VV V INTest Circuit 2. Switching Times, t ON , t OFFTest Circuit 3. Charge InjectionTEST CIRCUITS (Cont.)Test Circuit 4. Break-Before-Make Time Delay, t DTest Circuit 5. Off IsolationV OUTNO or NCCOMR L 50ΩV +C L 5pF0.1µFSource Signal Channel To Channel Crosstalk = -20V NO or V NCV OUTN.C.Test Circuit 6. Channel-to-Channel CrosstalkTEST CIRCUITS (Cont.)Test Circuit 7. Bandwidth -3dBPACKAGE OUTLINE DIMENSIONS TQFN-16 (3mm × 3mm)Note: All linear dimensions are in millimeters.REVISION HISTORYLocation Page 11/2007—Preliminary Datasheet01/2008—Data Sheet REV.ASG Microelectronics Co., LtdA2608, NO.72 North RoadXisanhuan, Haidian District,Beijing, China 100037Tel: 86-10-51798160/80Fax: 86-10-51798180-803。