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TS13003HVCTA3中文资料

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TS13003HV 1-3 2004/09 rev. A
TS13003HV
High Voltage NPN Transistor

Pin assignment:
1. Emitter
2. Collector
3. Base

BVCEO = 530V
BVCBO = 900V
Ic = 1.5A
VCE (SAT), = 0.5V @ Ic / Ib = 0.5A / 0.1A

Features 󰂗 High voltage. 󰂗 High speed switching Structure 󰂗 Silicon triple diffused type. 󰂗 NPN silicon transistor Ordering Information
Part No. Packing Package
TS13003HVCT B0Bulk Pack TO-92
TS13003HVCT A3Ammo Pack TO-92

Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage VCBO 900V V
Collector-Emitter Voltage VCEO 530V V
Emitter-Base Voltage VEBO 10 V
DC 1.5 Collector Current Pulse IC 3 A

Collector Power Dissipation PD 0.6 W
Operating Junction Temperature TJ +150 oC
Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%

Electrical Characteristics (Ta = 25 oC unless otherwise noted)

Parameter Conditions SymbolMin Typ MaxUnit
Static
Collector-Base Voltage IC = 10mA, IB = 0 BVCBO 900 -- -- V
Collector-Emitter Breakdown Voltage IC = 10mA, IE = 0 BVCEO 530 -- -- V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 BVEBO 9 -- -- V
Collector Cutoff Current VCB = 800V, IE = 0 ICBO -- -- 10 uA
Emitter Cutoff Current VEB = 10V, IC = 0 IEBO -- -- 0.5 uA
Collector-Emitter Saturation Voltage IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A VCE(SAT)1 VCE(SAT)2-- -- -- -- 2.5 0.8 V

DC Current Gain VCE = 10V, IC = 10uA VCE = 10V, IC = 0.4A VCE = 10V, IC = 1.0A hFE 15
20
6

--
--
--

40
40
40
Frequency VCE = 10V, IC = 0.1A fT 4 -- -- MHz
Output Capacitance VCB = 10V, f = 0.1MHz Cob -- 21 -- pF
Turn On Time tON -- 1.1 -- uS Storage Time tSTG -- -- 4 uS Fall Time VCC = 125V, IC = 1A,
I
B1 = 0.2A, IB2
= -0.2A,

RL = 125ohm
t

f
-- -- 0.7 uS

Note : pulse test: pulse width <=300uS, duty cycle <=2%

元器件交易网www.cecb2b.com
TS13003HV 2-3 2004/09 rev. A

Electrical Characteristics Curve
Figure 1. Static Characteric Figure 2. DC Current Gain

Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Switching Time
Figure 5. Safe Operating Area Figure 6. Power Derating

元器件交易网www.cecb2b.com
TS13003HV 3-3 2004/09 rev. A

TO-92 Mechanical Drawing
C
D

A
B

H
EF
G

TO-92 DIMENSION
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX

A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 14.30(typ) 0.563(typ)
D 0.43 0.49 0.017 0.019
E 2.19 2.81 0.086 0.111
F 3.30 3.70 0.130 0.146
G 2.42 2.66 0.095 0.105
H 0.37 0.43 0.015 0.017

元器件交易网www.cecb2b.com

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海德汉TNC 620 HSCI Gen 3驱动器紧凑型数控系统说明书

海德汉TNC 620 HSCI Gen 3驱动器紧凑型数控系统说明书

TNC 620 HSCIGen 3驱动器镗铣类机床的紧凑型数控系统面向机床制造商07/2021TNC数控系统带驱动系统一般信息TNC 620•铣、钻和镗机床的紧凑型数控系统•轴数：8个控制环，其中2个可配置为主轴•用海德汉变频器系统并优选使用海德汉电机•全数字化HSCI接口和EnDat接口•尺寸紧凑•CF闪存卡•海德汉Klartext对话式和G代码（ISO）编程•标准铣、钻和镗加工循环•测头探测循环•程序段处理速度快（1.5 ms）19英寸显示屏（纵向）版•一体化的显示屏、键盘和主机（MC8410）•显示器下端为键盘•多点触摸式操作15英寸显示屏（横向）版•一体化的显示屏和主机（MC8420）•独立的键盘单元•多点触控操作系统测试海德汉数控系统、功率模块、电机和编码器通常是完整系统的组成部件。

因此，需要综合测试整个系统，而不能仅仅测试各单独设备的技术性能。

损耗件海德汉数控系统中含易损件，例如、后备电池和风扇。

标准本产品遵循的标准（ISO，EN等），请见样本中的标注。

注意Intel、Intel Xeon、Core和Celeron是Intel Corporation的注册商标。

有效性本文所述功能和技术参数适用于以下数控系统和NC数控软件版本：TNC 620，NC数控软件版本817600-08（需出口许可证）817601-08（无需出口许可证）本样本是以前样本的替代版，所有以前版本均不再有效。

如有变更，恕不另行通知。

要求有些技术参数对机床的配置有特别要求。

请注意，有些功能还需机床制造商开发专用PLC程序。

功能安全特性（FS）如果未明确区分标准部件与FS部件（FS = 功能安全特性），所介绍的信息适用于这两类部件（例如， TE 735，TE 735 FS）。

对于带功能安全特性的部件，在其产品标识的最后带标识符“（FS）”，例如，UEC 3xx (FS)2目录TNC数控系统带驱动系统2一览表4HSCI控制部件16附件23电缆概要37技术说明44数据传输和通信73安装信息77主要尺寸79一般信息101其它海德汉数控系统103主题索引104请注意技术参数表内的页码。

CA-301中文资料

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Load capacitance
CL
Fundamental: 10 pF to ∞. Over tone: 5 pF to ∞
Series resistance
R1
As per below table
Shunt capacitance
C0
5 pF Max.
Insulation resistance
IR
∆f/f
±30 x 10-6 (Under 5.5 MHz: ±50 x 10-6,±100 x 10-6)
Frequency temperature characteristics (standard)
Under 5.5 MHz: ±50 x 10-6 Over 5.5 MHz: ±30 x 10-6
Only crystal oscillation is guaranteed
Soldering condition (only lead part) TSOL
Under +260 °C within 10 s
Do not heat the package at more than +150 °C
Frequency tolerance (standard)
Crystal unit
CYLINDER HIGH-FREQUENCY CRYSTAL UNIT
CA-301
• Compact design with case as small as 3 mm in diameter while still maintaining excellent characteristics of AT-cut.
Series resistance (Ω) 150 Ω Max. 100 Ω Max. 80 Ω Max. 60 Ω Max. 50 Ω Max. 40 Ω Max. 100 Ω Max. 80 Ω Max.
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CS30中文资料

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Symbol Test Conditions Maximum RatingsI T(RMS)T VJ = T VJM49A I T(AV)M T case = 85°C; 180° sine 31A I TSMT VJ = 45°C;t = 10 ms (50 Hz), sine 300A V R = 0 V t = 8.3 ms (60 Hz), sine 320A T VJ = T VJM t = 10 ms (50 Hz), sine 270A V R = 0 Vt = 8.3 ms (60 Hz), sine 290A I²tT VJ = 45°C t = 10 ms (50 Hz), sine 450A 2s V R = 0 V t = 8.3 ms (60 Hz), sine 440A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 365A 2s V R = 0 Vt = 8.3 ms (60 Hz), sine355A 2s (di/dt)crT VJ = T VJM repetitive, I T = 40 A 150A/m sf = 50 Hz, t P =200 m s V D = 2/3 V DRM I G = 0.3 A non repetitive, I T = I T(AV)M 500A/m s di G /dt = 0.3 A/m s(dv/dt)cr T VJ = T VJM ;V DR = 2/3 V DRM1000V/m s R GK = ¥; method 1 (linear voltage rise)P GM T VJ = T VJM t P =30 m s 10W I T = I T(AV)Mt P =300 m s5W P GAV 0.5W V RGM 10V T VJ -40...+125°C T VJM 125°C T stg -40...+125°C M dMounting torque M30.8...1.2Nm Weight6gFeaturesq Thyristor for line frequency qInternational standard package JEDEC TO-247q Planar passivated chipqLong-term stability of blocking currents and voltages qEpoxy meets UL 94V-0Applicationsq Motor control q Power converter q AC power controllerqSwitch-mode and resonant mode power suppliesqLight and temperature controlAdvantagesqEasy to mount with 1 screw (isolated mounting screw hole)q Space and weight savings q Simple mountingqImproved temperature and power cyclingData according to IEC 60747IXYS reserves the right to change limits, test conditions and dimensionsPhase Control ThyristorV RRM = 1200-1600 V I T(RMS)= 49 A I T(AV)M = 31 AV RSM V RRM TypeV DSM V DRM V V 12001200CS 30-12io114001400CS 30-14io116001600CS 30-16io1ACG A C TO-247 ADC = Cathode, A = Anode, G = Gate TAB = Anode(TAB)G030元器件交易网Symbol Test ConditionsCharacteristic ValuesI R , I D T VJ = T VJM ; V R = V RRM ; V D = V DRM £5mA V T I T= 45 A; T VJ = 25°C£1.6V V T0For power-loss calculations only (T VJ = 125°C)0.9V r T 15m W V GT V D = 6 V;T VJ = 25°C £ 1.0V T VJ = -40°C £ 1.2V I GTV D = 6 V;T VJ = 25°C £65mA T VJ = -40°C £80mAT VJ = 125°C £50mA V GD T VJ = T VJM ;V D = 2/3 V DRM£0.2V I GD £5mA I L T VJ = 25°C; t P = 10 m s£150mA I G = 0.3 A; di G /dt = 0.3 A/m s I H T VJ = 25°C; V D = 6 V; R GK = ¥£100mA t gd T VJ = 25°C; V D = 1/2 V DRM £2m s I G = 0.3 A; di G /dt = 0.3 A/m s R thJC DC current 0.62K/W R thJH DC current0.82K/W aMax. acceleration, 50 Hz50m/s 2Fig. 1Gate trigger rangeFig. 2Gate controlled delay time t gd1010010001101001000µst gdI G1101001000100000.1110I GV GmA VmA010203040506070809001020304050600.00.51.0I TA P TW Z thJCFig. 8Fig. 3Fig. 6元器件交易网。