HCF4099M013TR,HCF4099M013TR,HCF4099M013TR,HCF4099BEY,HCF4099BEY, 规格书,Datasheet 资料

1/24/111ORDERING INFORMATION:See detailed ordering and shipping information on the last page of this data sheet.Notes through are on page 10Features and BenefitsBenefitsApplication(s)• System/Load Switchresults in ⇒IRLML2244TRPbFIRLML2244TRPbF 3Fig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature-V DS , Drain-to-Source Voltage (V)0.1110100-V DS , Drain-to-Source Voltage (V)-I D , D r a i n -t o -S o u r c e C u r r e n t (A )T J , Junction Temperature (°C)R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c eIRLML2244TRPbFFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source Voltage Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain DiodeForward Voltage110100-V DS , Drain-to-Source Voltage (V)10100100010000C , C a p a c i t a n c e (p F )-V SD , Source-to-Drain Voltage (V)0.1110100-I S D , R e v e r s e D r a i n C u r r e n t (A )110100-V DS , Drain-to-Source Voltage (V)0.010.1110100-I D , D r a i n -t o -S o u r c e C u r r e n t (A)048121620Q G, Total Gate Charge (nC)2468101214-V G S , G a t e -t o -S o u r c e V o l t a g e (V )IRLML2244TRPbF 5Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-AmbientFig 9. Maximum Drain Current Vs.Ambient TemperatureFig 10b. Switching Time WaveformsFig 10a. Switching Time Test Circuit255075100125150T A , Ambient Temperature (°C)012345-I D , D r a i n C u r r e n t (A)t 1 , Rectangular Pulse Duration (sec)R DV DDV DSV t t t tFig 13. Typical On-Resistance Vs. DrainCurrentFig 12. Typical On-Resistance Vs. GateVoltageFig 14b. Gate Charge Test CircuitFig 14a. Basic Gate Charge Waveform 24681012-V GS, Gate -to -Source Voltage (V)20406080100120R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (m Ω)5101520253035-I D , Drain Current (A)04080120160200R D S (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (m Ω)Vgs = -4.5VIdQgs1Qgs2Qgd Qgodr 0 7Fig 15. Typical Threshold Voltage Vs.Junction TemperatureFig 16. Typical Power Vs. TimeT J , Temperature ( °C )-V G S (t h ), G a t e t h r e s h o l d V o l t a g e (V )Time (sec)P o w e r (W )IRLML2244TRPbFMicro3 (SOT-23/TO-236AB) Part Marking InformationMicro3 (SOT-23) Package OutlineDimensions are shown in millimeters (inches)Note: For the most current drawing please refer to IR website at: /package/cF =DA T E C E =X = D =C =B =A =W = (1-26) IF PRECEDED BY LAST DIG IT O F C ALENDA R YEA RH =G =KH G F E D C B 200620032002200520042008200720102009J Y 51292830C B D52ZNote: A line a bove the work we e k(a s s how n he re ) indic a tes Le a d - Fre e.I =J = IRLML2030L = IRLML0060M = IRLML0040K = IRLML0100N = IRLML2060P = IRLML9301R = IRLML9303C u HALOG PAIRLML2244TRPbF 9Micro3™ Tape & Reel InformationDimensions are shown in millimeters (inches)2.05 ( .080 )1.95 ( .077 )TRFEED DIRECTION4.1 ( .161 )3.9 ( .154 )1.6 ( .062 )1.5 ( .060 )1.85 ( .072 )1.65 ( .065 )3.55 ( .139 )3.45 ( .136 )1.1 ( .043 )0.9 ( .036 )4.1 ( .161 )3.9 ( .154 )0.35 ( .013 )0.25 ( .010 )8.3 ( .326 )7.9 ( .312 )1.32 ( .051 )1.12 ( .045 )9.90 ( .390 )8.40 ( .331 )178.00( 7.008 ) MAX.NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.Note: For the most current drawing please refer to IR website at: /package/IRLML2244TRPbFData and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .01/2011Qualification standards can be found at International Rectifier’s web site /product-info/reliabilityHigher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: /whoto-call/salesrep/Applicable version of JEDEC standard at the time of product release.Notes:Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Refer to application note #AN-994.Qualification information †分销商库存信息: IRIRLML2244TRPBF。

HC32F460系列32位ARM® Cortex®-M4 微控制器HC32F460PETB-LQFP100HC32F460KETA-LQFP64HC32F460KEUA-QFN60TRHC32F460JETA-LQFP48HC32F460JEUA-QFN48TR数据手册产品特性ARM Cortex-M4 32bit MCU+FPU，210DMIPS，512KB Flash，192KB SRAM，USB FS（Device/Host），14 Timers，2 ADCs，1 PGA，3 CMPs，20个通信接口⚫ARMv7-M 架构32bit Cortex-M4 CPU，集成FPU、MPU，支持SIMD指令的DSP，及CoreSight标准调试单元。

最高工作主频168MHz，Flash加速单元实现0-wait程序执行，达到210DMIPS或485Coremarks的运算性能⚫内置存储器–最大512KByte的Flash memory，支持安全保护及数据加密*1–最大192KByte的SRAM，包括32KByte的168MHz单周期访问高速RAM，4KByteRetention RAM⚫电源，时钟，复位管理–系统电源（Vcc）：1.8-3.6V–6个独立时钟源：外部主时钟晶振（4-24MHz），外部副晶振（32.768kHz），内部高速RC（16/20MHz），内部中速RC（8MHz），内部低速RC（32kHz），内部WDT专用RC（10kHz）–包括上电复位（POR），低电压检测复位（LVDR），端口复位（PDR）在内的14种复位源，每个复位源有独立标志位⚫低功耗运行–外设功能可以独立关闭或开启–三种低功耗模式：Sleep，Stop，Power down 模式–Run模式和Sleep模式下支持高速模式、超低速模式之间的切换–待机功耗：Stop模式typ.90uA@25°C，Power down模式最低至1.8uA@25°C–Power down模式下，支持16个端口唤醒，支持超低功耗RTC工作，4KByte SRAM保持数据–待机快速唤醒，Stop模式唤醒最快至2us，Power down模式唤醒最快至20us⚫外设运行支持系统显著降低CPU处理负荷–8通道双主机DMAC–USBFS专用DMAC–数据计算单元（DCU）–支持外设事件相互触发（AOS）⚫高性能模拟–2个独立12bit 2MSPS ADC–1个可编程增益放大器（PGA）–3个独立电压比较器（CMP），支持2路内部基准电压–1个片上温度传感器（OTS）⚫Timer–3个多功能16bit PWM Timer（Timer6）–3个16bit 电机PWM Timer（Timer4）–6个16bit 通用Timer（TimerA）–2个16bit 基础Timer（Timer0）⚫最大83个GPIO–CPU单周期访问，最大100MHz输出–最大81个5V-tolerant IO⚫最大20个通信接口–3个I2C，支持SMBus协议–4个USART，支持ISO7816-3协议–4个SPI–4个I2S，内置音频PLL支持音频级采样精度–2个SDIO，支持SD/MMC/eMMC格式–1个QSPI，支持168Mbps高速访问（XIP）–1个CAN，支持ISO11898-1标准协议–1个USB 2.0 FS，内置PHY，支持Device/Host ⚫数据加密功能–AES/HASH/TRNG⚫封装形式：LQFP100（14×14mm）LQFP64（10×10mm）QFN60（7×7mm）QFN48（5×5mm）LQFP48（7×7mm）*1：关于Flash安全保护及数据加密的具体规格，请咨询销售窗口。

s MEDIUM-SPEED OPERATIONs COMMON RESETs FULLY STA TIC OPERATIONs BUFFERED INPUTS AND OUTPUTSs QUIESCENT CURRENT SPECIFIED UP TO 20Vs5V,10V AND15V PARAMETRIC RATINGSs INPUT LEAKAGE CURRENTI I=100nA(MAX)AT V DD=18V T A=25°Cs100%TESTED FOR QUIESCENT CURRENT s MEETS ALL REQUIREMENTS OF JEDEC JESD13B”STANDARD SPECIFICATIONSFOR DESCRIPTION OF B SERIES CMOSDEVICES”DESCRIPTIONThe HCF4060B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology available in DIP and SOP packages. The HCF4060B consists of an oscillator section and14ripple carry binary counter stages.The oscillator configuration allows design of either RC or crystal oscillator circuits.A RESET input is provided which reset the counter to the all0’s state and disable oscillator.A high level on the RESET line accomplishes the reset function.All counter stages are master slave flip-flops.The state of the counter is advanced one step in binary order on the negative transition ofφ1(andφ0).All inputs and outputs are fully buffered.Schmitt trigger action on the clock pin permits unlimited clock rise and fall time.HCF4060B14-STAGE RIPPLE CARRY BINARY COUNTER/DIVIDER AND OSCILLATORPIN CONNECTION ORDER CODESPACKAGE TUBE T&R DIP HCF4060BEYSOP HCF4060BM1HCF4002M013TRDIP SOP1/9September2001HCF4060B2/9INPUT EQUIVALENT CIRCUITPIN DESCRIPTIONFUNCTIONAL DIAGRAMLOGIC DIAGRAMPIN No SYMBOLNAME AND FUNCTION1,2,3,4,5,6,7,13,14,15Q 12,Q 13,Q 14,Q 6,Q 5,Q 7,Q 4,Q 9,Q 8,Q 10Outputs 9,10,11Φ0,Φ0,Φ1Oscillator Input 12RESET Reset8V SS Negative Supply Volt-age16V DDPositive Supply Volt-ageHCF4060B3/9ABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur.Functional operation under these conditions is not implied.All voltage values are referred to V SS pin voltage.RECOMMENDED OPERATING CONDITIONSSymbol ParameterValue Unit V DD Supply Voltage -0.5to +22V V I DC Input Voltage -0.5to V DD +0.5V I I DC Input Current±10mA P D Power Dissipation per Package200mW Power Dissipation per Output Transistor 100mW T op Operating Temperature -55to +125°C T stgStorage Temperature-65to +150°CSymbol ParameterValue Unit V DD Supply Voltage 3to 20V V I Input Voltage0to V DD V T opOperating Temperature-55to 125°CHCF4060B4/9DC SPECIFICATIONSThe Noise Margin for both ”1”and ”0”level is:1V min.with V DD =5V,2V min.with V DD =10V,2.5V min.with V DD =15VSymbolParameterTest ConditionValue UnitV I (V)V O (V)|I O |(µA)V DD (V)T A =25°C -40to 85°C -55to 125°C Min.Typ.Max.Min.Max.Min.Max.I LQuiescent Current0/550.0455150µA0/10100.0410103000/15150.0420206000/20200.081001003000V OHHigh Level Output Voltage0/5<15 4.95 4.95 4.95V0/10<1109.959.959.950/15<11514.9514.9514.95V OLLow Level Output Voltage 5/0<150.050.050.05V10/0<1100.050.050.0515/0<1150.050.050.05V IHHigh Level Input Voltage 0.5/4.5<15 3.5 3.5 3.5V1/9<1107771.5/13.5<115111111V ILLow Level Input Voltage 4.5/0.5<15 1.5 1.5 1.5V9/1<11033313.5/1.5<115444I OHOutput Drive Current0/5 2.5<15-1.36-3.2-1.15-1.1mA0/5 4.6<15-0.44-1-0.36-0.360/109.5<110-1.1-2.6-0.9-0.90/1513.5<115-3.0-6.8-2.4-2.4I OLOutput Sink Current0/50.4<150.4410.360.36mA 0/100.5<110 1.1 2.60.90.90/15 1.5<115 3.06.8 2.42.4I I Input Leakage Current0/18Any Input 18±10-5±0.3±0.3±1µA C IInput CapacitanceAny Input57.5pFHCF4060B5/9DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25°C,C L =50pF,R L =200K Ω,t r =t f =20ns)(*)Typical temperature coefficent for all V DD values is 0.3%/°C,all input rise and fall times=20ns.(**)RC Oscillator applications are not recommended at supply voltages below 7V for R X =50K ΩSymbolParameterTest ConditionValue (*)UnitV DD (V)Min.Typ.Max.t TLH t THL Output Transition Time5100200ns 1050100154080t PLH t PHL Propagation Delay Time (φto Q 4out)5370740ns1015030015100200t PLH t PHL Propagation Delay Time(Q n to Q n+1)5100200ns1050100154080t WInput Pulse Width5f =100KHz 50100ns102040151530t r t fInput Pulse Rise and Fall Time5Unlimited µs1015f maxMaximum Clock Input Frequency5 3.57MHz10816151224RESET OPERATION t PHL Propagation Delay Time5180360ns10801601550100t WInput Pulse Width560120ns103060152040RC OPERATIONVariation of Frequency (Unit-to-Unit)5Cx=200pF,Rs=560K Ω, Rx=50K Ω1821.525KHz102023261521.12427Variation of Frequency With Voltage Change (Same Unit)5to 10Cx=200pF,Rs=560K Ω, Rx=50K Ω2KHz10to 151R X5Cx=10µF 20M Ω10Cx=50µF 2015Cx=10µF 10C X5Rx=500K Ω1000mF10Rx=300K Ω5015Rx=300K Ω50Maximum Oscillator Frequency (**)10Rx=5K Ω, Cx=15pF530650810pF15690800940HCF4060BDETAIL OF TYPICAL FLIP-FLOP STAGE TYPICAL RC OSCILLATOR CIRCUIT TYPICAL CRYSTAL OSCILLATOR CIRCUIT 6/9HCF4060B Plastic DIP-16(0.25)MECHANICAL DATAmm.inchDIM.MIN.TYP MAX.MIN.TYP.MAX.a10.510.020B0.77 1.650.0300.065b0.50.020b10.250.010D200.787E8.50.335e 2.540.100e317.780.700F7.10.280I 5.10.201L 3.30.130Z 1.270.050P001C7/9HCF4060B8/9DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A 1.750.068 a10.10.20.0030.007 a2 1.650.064 b0.350.460.0130.018 b10.190.250.0070.010 C0.50.019c145°(typ.)D9.8100.3850.393 E 5.8 6.20.2280.244 e 1.270.050e38.890.350F 3.8 4.00.1490.157G 4.6 5.30.1810.208 L0.5 1.270.0190.050 M0.620.024 S8°(max.)SO-16MECHANICAL DATAPO13HHCF4060B Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringe ment of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specifications mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.©The ST logo is a registered trademark of STMicroelectronics©2001STMicroelectronics-Printed in Italy-All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-MoroccoSingapore-Spain-Sweden-Switzerland-United Kingdom©http://w 9/9。

20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
−
−
500
−
−
500
−
−
140
−
−
100
−
Unit Vdc mA mA Vdc Vdc
−
pF MHz
ns ns ns
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 D = 0.5 0.5
0.3 0.2
0.2
0.1 0.1
0.07
0.05
0.05 0.02
MJF44H11 MJF45H11
Symbol VCEO(sus)
ICES IEBO VCE(sat) VBE(sat) hFE