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74AHCT1G08中文资料

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元器件交易网
INTEGRATED CIRCUITS
DATA SHEET
74AHC1G08; 74AHCT1G08 2-input AND gate
Product specification Supersedes data of 2002 Feb 21 2002 Jun 06
VI = VCC or GND; 5.5 IO = 0
2002 Jun 06
5
元器件交易网
Philips Semiconductors
Product specification
2-input AND gate
74AHC1G08; 74AHCT1G08
Family 74AHCT1G At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH VIL VOH HIGH-level input voltage LOW-level input voltage HIGH-level output VI = VIH or VIL; voltage IO = −50 µA VI = VIH or VIL; IO = −8.0 mA VOL LOW-level output voltage VI = VIH or VIL; IO = 50 µA VI = VIH or VIL; IO = 8.0 mA ILI ICC ∆ICC input leakage current quiescent supply current additional quiescent supply current per input pin input capacitance VI = VIH or VIL VCC (V) MIN. − − 4.5 − 0 − − − − 25 − 0.8 − − 0.1 0.36 0.1 1.0 1.35 Tamb (°C) −40 to +85 − 0.8 − − 0.1 0.44 1.0 10 1.5 −40 to +125 UNIT − 0.8 − − 0.1 0.55 2.0 40 1.5
handbook, halfpage
B 1 A 2 GND 3
MNA112
5 VCC
handbook, halfpage
1 2
B A
08
4 Y
Y
4
MNA113
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2002 Jun 06
3
元器件交易网
74AHC1G08; 74AHCT1G08
OUTPUT Y L L L H
PACKAGES TYPE NUMBER 74AHC1G08GW 74AHCT1G08GW 74AHC1G08GV 74AHCT1G08GV PINNING PIN 1 2 3 4 5 B A GND Y VCC SYMBOL data input B data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 5 5 5 5 PACKAGE SC-88A SC-88A SC-74A SC-74A MATERIAL plastic plastic plastic plastic CODE SOT353 SOT353 SOT753 SOT753 MARKING AE CE A08 C08
2002 Jun 06
2
元器件交易网
Philips Semiconductors
Product specification
2-input AND gate
FUNCTION TABLE See note 1. INPUTS A L L H H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION B L H L H
74AHC1G08; 74AHCT1G08
DESCRIPTION The 74AHC1G/AHCT1G08 is a high-speed Si-gate CMOS device. The 74AHC1G/AHCT1G08 provides the 2-input AND function.
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. PARAMETER propagation delay A and B to Y input capacitance power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 CONDITIONS AHC1G CL = 15 pF; VCC = 5 V 3.2 1.5 17 AHCT1G 3.6 1.5 19 ns pF pF UNIT
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS 74AHC1G SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage ambient temperature see DC and AC characteristics per device VCC = 3.3 ±0.3 V VCC = 5 ±0.5 V CONDITIONS MIN. 2.0 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 5.5 VCC +125 MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 5.5 VCC +125 V V V °C 74AHCT1G UNIT
tr, tf (∆t/∆f)
input rise and fall times
− −
− −
100 20
− −
− −
− 20
ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC VI IIK IOK IO ICC Tstg PD Note 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. PARAMETER supply voltage input voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from −40 to +125 °C VI < −0.5 V VO < −0.5 V or VO > VCC + 0.5 V; note 1 −0.5 V < VO < VCC + 0.5 V CONDITIONS MIN. −0.5 −0.5 − − − − −65 − MAX. +7.0 +7.0 −20 ±20 ±25 ±75 +150 250 UNIT V V mA mA mA mA °C mW
元器件交易网
Philips Semiconductors
Product specification
2-input AND gate
FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 1000 V. • Low power dissipation • Balanced propagation delays • Very small 5-pin package • Output capability: standard • Specified from −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
Philips Semiconductors
Product specification

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74HC1G08

74HC1G08

INTEGRATED CIRCUITS
DATA SHEET
74HC1G08; 74HCT1G08 2-input AND gate
Product specification File under Integrated Circuits, IC06
1998 Nov 10
Philips Semiconductors
−
−
−
ns
VCC = 2.0 V
−
−
500 ns
VCC = 4.5 V
−
−
−
ns
VCC = 6.0 V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
PINNING
PIN 1 2 3 4 5
SYMBOL inB inA GND outY VCC
DESCRIPTION data input B data input A ground (0 V) data output DC supply voltage
1998 Nov 10
2
Philips Semiconductors
4.13 4.32 − 5.63 5.81 −
3.7
−
5.2
−
VOL
LOW-level output
−
0
0.1
−
0.1
voltage; all outputs
−
0
0.1
−
0.1
−
0
0.1
−
74VHC08中文资料

74VHC08中文资料

74VHC08QUAD 2-INPUT AND GATEPRELIMINARY DATA®June 1999s HIGH SPEED:t PD =4.3ns (TYP.)at V CC =5V sLOW POWER DISSIPATION:I CC =2µA (MAX.)at T A =25o C sHIGH NOISE IMMUNITY:V NIH =V NIL =28%V CC (MIN.)s POWER DOWN PROTECTION ON INPUTS sSYMMETRICAL OUTPUT IMPEDANCE:|I OH |=I OL =8mA (MIN)sBALANCED PROPAGATION DELAYS:t PLH ≅t PHLsOPERATING VOLTAGERANGE:V CC (OPR)=2V to 5.5VsPIN AND FUNCTION COMPATIBLE WITH 74SERIES 08s IMPROVED LATCH-UP IMMUNITY sLOW NOISE:V OLP =0.8V(Max.)DESCRIPTIONThe 74VHC08is an advanced high-speed CMOS QUAD 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology.The internal circuit is composed of 2stagesincluding buffer output,which provide high noise immunity and stable output.Power down protection is provided on all inputs and 0to 7V can be accepted on inputs with no regard to the supply voltage.This device can be used to interface 5V to 3V.All inputs and outputs are equipped with protection circuits against static discharge,giving them 2KV ESD immunity and transient excess voltage.PIN CONNECTION AND IEC LOGIC SYMBOLSORDER CODES :74VHC08M 74VHC08TM(Micro Package)T(TSSOP Package)1/7TRUTH TABLEA B Y L L L L H L H L L HHHPIN DESCRIPTIONPIN No SYMBOL NAME AND FUNCTION 1,4,9,121A to 4A Data Inputs 2,5,10,131B to 4B Data Inputs 3,6,8,111Y to 4Y Data Outputs 7GND Ground (0V)14V CCPositive Supply VoltageABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V CC Supply Voltage -0.5to +7.0V V I DC Input Voltage -0.5to +7.0V V O DC Output Voltage -0.5to V CC +0.5V I IK DC Input Diode Current -20mA I OK DC Output Diode Current ±20mA I O DC Output Current ±25mA I CC or I GND DC V CC or Ground Current±50mAT stg Storage Temperature -65to +150o C T LLead Temperature (10sec)300oCAbsolute Maximum Ratingsarethose values beyond which dam age to the device may occur.Functional operation un der these condition is not implied.RECOMMENDED OPERATING CONDITIONSSymbol ParameterValue Unit V CC Supply Voltage 2.0to 5.5V V I Input Voltage 0to 5.5V V O Output Voltage 0to V CC VT op Operating Temperature-40to +85oCdt/dvInput Rise and Fall Time (see note 1)(V CC =3.3±0.3V)(V CC =5.0±0.5V)0to 1000to 20ns/V ns/V1)V IN from 30%to70%of V CCINPUT EQUIVALENT CIRCUIT74VHC082/7DC SPECIFICATIONSSymbolParameterTest Conditions ValueUnitV CC (V)T A =25oC -40to 85oC Min.Typ.Max.Min.Max.V IH High Level Input Voltage 2.0 1.5 1.5V 3.0to 5.50.7V CC0.7V CCV IL Low Level Input Voltage2.00.50.5V3.0to 5.50.3V CC0.3V CC V OHHigh Level Output Voltage2.0I O =-50µA 1.9 2.0 1.9V3.0I O =-50µA 2.9 3.0 2.94.5I O =-50µA 4.4 4.54.43.0I O =-4mA 2.58 2.484.5I O =-8mA 3.943.8V OLLow Level Output Voltage2.0I O =50µA 0.00.10.1V3.0I O =50µA 0.00.10.14.5I O =50µA 0.00.10.13.0I O =4mA 0.360.444.5I O =8mA 0.360.44I I Input Leakage Current 0to 5.5V I =5.5V or GND ±0.1±1.0µA I CCQuiescent Supply Current5.5V I =V CC or GND220µACAPACITIVE CHARACTERISTICSSymbolParameterTest ConditionsValueUnitT A =25oC -40to 85oC Min.Typ.Max.Min.Max.C IN Input Capacitance 41010pF C PDPower Dissipation Capacitance (note 1)18pF1)C PD isdefined as the value of the IC’sinternal equiva lent capacitance which is calculated fromthe operating current consumption without load.(Referto Test Circuit).Average operating current can be obtained bythe following equation.I CC (opr)=C PD •V CC •f IN +I CC /4(per Gate)AC ELECTRICAL CHARACTERISTICS (Input t r =t f =3ns)SymbolParameterTest Condition ValueUnitV CC (V)C L (pF)T A =25o C -40to 85o C Min.Typ.Max.Min.Max.t PLH t PHL Propagation Delay Time3.3(*)15 6.28.8 1.010.5ns3.3(*)508.712.3 1.014.05.0(**)15 4.3 5.9 1.07.05.0(**)505.87.91.09.0(*)Voltag e range is 3.3V ±0.3V (**)Voltage range is 5V ±0.5V74VHC083/7DYNAMIC SWITCHING CHARACTERISTICSSymbolParameterTest Conditions ValueUnitV CC (V)T A =25oC -40to 85oC Min.Typ.Max.Min.Max.V OLP Dynamic Low Voltage Quiet Output (note 1,2) 5.0C L =50pF0.30.8VV OLV -0.8-0.3V IHD Dynamic High Voltage Input (note 1,3) 5.0 3.5V ILDDynamic Low Voltage Input (note 1,3)5.01.51)Worst case package.2)Max num ber of outputs defined as (n).Data inputs aredriven 0V to 5.0V,(n -1)outputs switching and one out put at GND.3)Max num ber of data inputs (n)switching.(n-1)switching 0V to5.0V.Inputs under test switching:5.0V to threshold (V ILD ),0V to threshold (V IHD ),f=1MHz.C L =15/50pF or equ ivalent (includes jigand probe capacitance)R T =Z OU T of pulse generator (typ ically 50Ω)WAVEFORM:PROPAGATION DELAYS (f=1MHz;50%duty cycle)TEST CIRCUIT74VHC084/7DIM.mm inch MIN.TYP.MAX.MIN.TYP.MAX.A 1.750.068a10.10.20.0030.007a2 1.650.064b 0.350.460.0130.018b10.190.250.0070.010C 0.50.019c145(typ.)D 8.558.750.3360.344E 5.86.20.2280.244e 1.270.050e37.620.300F 3.8 4.00.1490.157G 4.6 5.30.1810.208L 0.5 1.270.0190.050M 0.680.026S8(max.)P013GSO-14MECHANICAL DATA74VHC085/7DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 1.10.433A10.050.100.150.0020.0040.006A20.850.90.950.3350.3540.374b 0.190.300.00750.0118c 0.090.200.00350.0079D 4.95 5.10.1930.1970.201E 6.25 6.4 6.50.2460.2520.256E1 4.34.4 4.480.1690.1730.176e 0.65BSC0.0256BSCK 0o 4o 8o 0o 4o 8o L0.500.600.700.0200.0240.028cEbA2AE1D1PIN 1IDENTIFICATIONA1LKeTSSOP14MECHANICAL DATA74VHC086/774VHC08 Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequence sof use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics–Printed in Italy–All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A..7/7。

74HC00中文资料_数据手册_参数

74HC00中文资料_数据手册_参数


IO = −20 µA
2.0
IO = −20 µA
4.5
IO = −20 µA
6.0
IO = −4.0 mA
4.5
IO = −5.2 mA
6.0
VOL
LOW-level output voltage VI = VIH or VIL
IO = 20 µA
2.0
IO = 20 µA
4.5
IO = 20 µA
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
VCC VI VO Tamb
supply voltage input voltage output voltage operating ambient temperature
tr, tf
input rise and fall times
74HC00; 74HCT00
handbook, halfpage
1B 2
1A VCC 1 14
13 4B
1Y 3
12 4A
2A 4 2B 5
GND(1)
11 4Y 10 3B
2Y 6 78
Top view GND 3Y
9 3A
MNA950
handbook, halfpage A B
Y
MNA211
(1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.
6.0
IO = 4.0 mA
74V1G08STR中文资料

74V1G08STR中文资料

1/9July 2001s HIGH SPEED: t PD = 3.8ns (TYP.) at V CC = 5V sLOW POWER DISSIPATION:I CC = 1µA(MAX.) at T A =25°C sHIGH NOISE IMMUNITY:V NIH = V NIL = 28% V CC (MIN.)s POWER DOWN PROTECTION ON INPUTS sSYMMETRICAL OUTPUT IMPEDANCE:|I OH | = I OL = 8mA (MIN) at V CC = 4.5V sBALANCED PROPAGATION DELAYS:t PLH ≅ t PHLsOPERATING VOLTAGE RANGE:V CC (OPR) = 2V to 5.5VsIMPROVED LATCH-UP IMMUNITYDESCRIPTIONThe 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology.The internal circuit is composed of 2 stages including buffer output, which provide high noise immunity and stable output.Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.74V1G08SINGLE 2-INPUT AND GATEPIN CONNECTION AND IEC LOGIC SYMBOLSORDER CODESPACKAGE T & R SOT23-5L 74V1G08STR SOT323-5L74V1G08CTR74V1G082/9INPUT EQUIVALENT CIRCUITPIN DESCRIPTIONTRUTH TABLEABSOLUTE MAXIMUM RATINGSAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.RECOMMENDED OPERATING CONDITIONS1) V IN from 30% to 70% of V CCPIN No SYMBOL NAME AND FUNCTION 11A Data Input 21B Data Input 41Y Data Output 3GND Ground (0V)5V CCPositive Supply VoltageA B Y L L L L H L H L L HHHSymbol ParameterValue Unit V CC Supply Voltage -0.5 to +7.0V V I DC Input Voltage -0.5 to +7.0V V O DC Output Voltage -0.5 to V CC + 0.5V I IK DC Input Diode Current - 20mA I OK DC Output Diode Current ± 20mA I ODC Output Current± 25mA I CC or I GND DC V CC or Ground Current± 50mA T stg Storage Temperature-65 to +150°C T LLead Temperature (10 sec)260°CSymbol ParameterValue Unit V CC Supply Voltage 2 to 5.5V V I Input Voltage 0 to 5.5V V O Output Voltage 0 to V CC V T op Operating Temperature-55 to 125°C dt/dvInput Rise and Fall Time (note 1) (V CC = 3.3 ± 0.3V) (V CC = 5.0 ± 0.5V)0 to 1000 to 20ns/V ns/V74V1G083/9DC SPECIFICATIONSAC ELECTRICAL CHARACTERISTICS (Input t r = t f = 3ns)(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ± 0.5VCAPACITIVE CHARACTERISTICS1) C PD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I CC(opr) = C PD x V CC x f IN + I CCSymbolParameterTest ConditionValue UnitV CC (V)T A = 25°C -40 to 85°C -55 to 125°C Min.Typ.Max.Min.Max.Min.Max.V IHHigh Level Input Voltage2.0 1.5 1.5 1.5V3.0 to 5.50.7V CC0.7V CC0.7V CCV ILLow Level Input Voltage2.00.50.50.5V3.0 to 5.50.3V CC0.3V CC0.3V CCV OHHigh Level Output Voltage2.0I O =-50 µA 1.9 2.0 1.9 1.9V3.0I O =-50 µA 2.9 3.0 2.9 2.94.5I O =-50 µA 4.4 4.54.4 4.43.0I O =-4 mA 2.58 2.48 2.44.5I O =-8 mA 3.943.83.7V OLLow Level Output Voltage2.0I O =50 µA 0.00.10.10.1V3.0I O =50 µA 0.00.10.10.14.5I O =50 µA 0.00.10.10.13.0I O =4 mA 0.360.440.554.5I O =8 mA 0.360.440.55I I Input Leakage Current0 to 5.5V I = 5.5V or GND ± 0.1± 1± 1µA I CCQuiescent Supply Current5.5V I = V CC or GND11020µA SymbolParameterTest ConditionValueUnitV CC (V)C L (pF)T A = 25°C -40 to 85°C -55 to 125°C Min.Typ.Max.Min.Max.Min.Max.t PLH t PHL Propagation DelayTime3.3(*)15 5.27.5 1.09.0 1.010.0ns 3.3(*)50 5.88.5 1.010.0 1.011.05.0(**)15 3.8 5.9 1.07.0 1.08.05.0(**)504.67.01.08.01.09.0SymbolParameterTest ConditionValue UnitT A = 25°C -40 to 85°C -55 to 125°C Min.Typ.Max.Min.Max.Min.Max.C IN Input Capacitance 4101010pF C PDPower Dissipation Capacitance (note 1)10pF74V1G084/9TEST CIRCUITL R T = Z OUT of pulse generator (typically 50Ω)WAVEFORM: PROPAGATION DELAY(f=1MHz; 50% duty cycle)74V1G08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.© The ST logo is a registered trademark of STMicroelectronics© 2001 STMicroelectronics - Printed in Italy - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - MoroccoSingapore - Spain - Sweden - Switzerland - United Kingdom© 9/9。