2SC3444资料

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晶体管型号:2N1711(S)

生产厂家:德国AEG公司,DIT,德国椤茨标准电器公司

制作材料:Si-NPN

性质:通用型(Uni)

封装形式:直插封装

极限工作电压:75V

最大电流允许值:0.5A

最大耗散率:0.8W

放大倍数:未知放大倍数

最大工作频率:>70MHZ

引脚数: 3

可代换的型号:BC140,BC141,BC300,BC301,2N1990,

晶体管型号:2N2102(A.L.S)

生产厂家:美国国民半导体公司,美国无线电公司,SEM,美国得克萨斯仪表公司,德国凡尔

伏公司

制作材料:Si-NPN

性质:低频或音频放大(LF),开关管(S)

封装形式:直插封装

极限工作电压:120V

最大电流允许值:1A

最大耗散率:1W

放大倍数:未知放大倍数

最大工作频率:>120MHZ

引脚数: 3

可代换的型号:

BC300,BSS42,BSS43,BSV84,BSW67,BSX47,2N2243,2N2405,2N3019,2N3020,3DK03E,

晶体管型号:2N2218(A)

生产厂家:SEM,德国电子元件股份公司,美国得克萨斯仪表公司,美国晶体管有限公司,德

国凡尔伏公司

制作材料:Si-NPN

性质:通用型(Uni)

封装形式:直插封装

极限工作电压:60V

最大电流允许值:0.8A

最大耗散率:0.8W

放大倍数:β>40

最大工作频率:<1MHZ或者未知工作频率

引脚数: 3

可代换的型号:

BC141,BC301,BFX96A,BSW51,BSW52,BSW53,BSW54,BSX45,BSX59,BSX60,BSX61,2N3444,3DK3 D,

晶体管型号:2N2219

2SA系列（PNP型）三极管参数表

2SA系列(PNP型)三极管参数表

型号⼚商特性⽤途集电极

最⼤直

流耗散

功率Pcm(W)

集电极

最⼤允

许直流

电流Icm(A)

集电极-

基极击穿

电压BVcbo(V)

集电极-

发射极击

穿电压BVceo(V)

特征频

率ft(Hz)

放⼤倍数

国内外代换

型号2SA0683PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC13831 -1.5 -30 -25 200M 50-340 CK77A

2SA0684PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC13841 -1.5 -60 -50 200M 50-340 CK77A

2SA0794PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC15671.2 -500m -100 -100 120M 50-220 CA77A2SA0794A PANASONIC 硅PNP三极管,低频功率放⼤和驱动，

配对管2SC1567A1.2 -500m -120 -120 120M 50-220 CA77A

2SA0885PANASONIC 硅PNP三极管,低频功率放⼤，配对管

2SC1846

5 -1 -45 -35 200M 50-340 3CK10B

2SA0886PANASONIC 硅PNP三极管,低频功率放⼤，配对管

2SC1847

1.2 -1.5 -50 -40 150M 80-220 3CK10B

2SA100锗PNP三极管,⾼频射频放⼤60m -10m -40 10M 80-300 3AG95A 2SA1001硅PNP三极管80 130 3CD10E 2SA1002硅PNP三极管120 120 3CD15D 2SA1003硅PNP三极管120 150 3CD15E 2SA1004硅PNP三极管310m -100m -40 3CG121C

2SA1006NEC 硅PNP三极管,功率放⼤，配对管

2SC2336

2SC3324

2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3324

Audio Frequency Low Noise Amplifier Applications

• High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Unit

Collector-base voltage VCBO 120 V

Collector-emitter voltage VCEO 120 V

Emitter-base voltage VEBO 5 V

Collector current IC 100 mA

Base current IB 20 mA

Collector power dissipation PC 150 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55~125 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking

I

CVCETYPEPOLA RITY(mW)(mA)(V)(V)mAVoltsMax VoltsmA(MHZ)Marking1S9012PNP3005004025120/3505010.6500501502T12S9013NPN3005004025120/3505010.650050150J33S9014NPN2001005045200/1000150.31005150J64S9015PNP2001005045200/1000150.310010150M65S9018NPN20050251870/1901.O50.51001600J86S8050NPN3005004025120/3505010.650050150J3Y7S8550PNP3005004025120/3505010.6500501502TY8SS8050NPN1001500402585/30010010.58008080Y19SS8550PNP1001500402585/30010010.58008080Y210C1815NPN20015060500130/400260.251001080HF11A1015PNP2001505050130/400260.31001080BA12C945NPN2001506050130/400160.310010150CR13A733PNP2001506050120/475160.31001050CS142SC1623NPN200100605090/600160.310010250L4、L5、L6、L715M28SNPN20010004020300/1000010010.556002010028S16M8050NPN2001000402580/30010010.580080150Y1117M8550PNP2001000402585/30010010.580080150Y2118MMBT5551NPN30060018016080/250105.O0.5505.O80G119MMBT5401PNP300600160150100/200105.O0.5500.51002L20MMBTA42NPN300300300300100/20010100.2202501D21MMBTA92NPN300300300300100/20010100.2202502D222SC2412NPN2001506050120/560160.4505180BQ、BR、BS232SC3356NPN300100201250/30020100.51057000R23、R24、R25242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR26BC807-16PNP2255005045100/25010010.7500502005A27BC807-25PNP2255005045160/40010010.7500502005B28BC807-40PNP2255005045250/60010010.7500502005C29BC817-16NPN2255005045100/25010010.7500502006A30BC817-25NPN2255005045160/40010010.7500502006B31BC817-40NPN2255005045250/60010010.7500502006C32BC846ANPN2251008065110/220250.610051001A33BC846BNPN2251008065200/450250.610051001B34BC847ANPN2251005045110/220250.610051001E35BC847BNPN2251005045200/450250.610051001F36BC847CNPN2251005045420/800250.610051001G37BC848ANPN2251003030110/220250.610051001J38BC848BNPN2251003030200/450250.610051001K39BC848CNPN2251003030450/800250.610051001L40BC858APNP2251008065125/250250.6510051003A41BC858BPNP2251008065220/475250.6510051003B42BC857APNP2251005045125/250250.6510051003E43BC857BPNP2251005045220/475250.6510051003F44BC875CPNP2251005045420/800250.6510051003G贴片三极管主要参数一览表(SOT-23)hFE极性型号PDICBVCBOBVCEO序号VCE(sat) IC/IBf TYPE打标Min/MaxI