2SC3840资料

高频三级管代换资料

号 功率 增益 电压 频率 工作状态 封装 123脚

国外三极管

2N3375 10W 5dB 28V 400MHz FM/AM/SSB TO-60

2N3553 2.5W 10dB 28V 175MHz FM/AM TO-39 C B E

2N3632 20W 7dB 28V 175MHz FM TO-60

2N3866 5W 10dB 28V 400MHz WINTransceiver TO-39 C B E

2N3924 4W 6dB 13.6V 175MHz WINTransceiver TO-39

2N4427 2W 10dB 12V 175MHz WINTransceiver TO-39

2N5108 1W 5dB 24V 1200MHz WINTransceiver TO-39

2N5109 3.5W 11dB 15V 200MHz WINTransceiver TO-39

2N5421 3W 9dB 13.5V 175MHz WINTransceiver TO-39

2N5913 2W 7dB 12.5V 175MHz WINTransceiver TO-39

2N5943 1W 8dB 15V 400MHz FM TO-39

2SC730 0.8W 10dB 13.5V 175MHz FM TO-39 C B E

1Transistors

Publication date: March 2003SJC00150BED2SC3940, 2SC3940A

Silicon NPN epitaxial planar type

For low-frequency output amplification and driver amplification

Complementary to 2SA1534, 2SA1534A

■Features

•Low collector-emitter saturation voltage VCE(sat)•Allowing supply with the radial taping

■Absolute Maximum Ratings Ta = 25°CUnit: mm

ParameterSymbolConditionsMinTypMaxUnit

Collector-base voltage2SC3940VCBOIC = 10 µA, IE = 030V

(Emitter open)2SC3940A60

Collector-emitter voltage2SC3940VCEOIC = 2 mA, IB =

025V

(Base open)2SC3940A50

Emitter-base voltage (Collector open)VEBOIE = 10 µA, IC =

05V

Collector-base cutoff current (Emitter open)ICBOVCB = 20 V, IE = 00.1µA

Forward current transfer ratio *1hFE1 *2VCE = 10 V, IC = 500 mA85340

hFE2VCE = 5 V, IC = 1 A50

Collector-emitter saturation voltage*1VCE(sat)IC = 500 mA, IB = 50 mA0.20.4V

78Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application: Audio and General Purpose

SymbolVCBOVCEOVEBOICIBPCTjTstg2SC38562001806154130(Tc=25°C)150–55 to +150UnitVVVAAW°C°CsAbsolute maximum ratings sElectrical CharacteristicsSymbolICBOIEBOV(BR)CEOhFEVCE(sat)fTCOB2SC3856100max100max180min50min∗2.0max20typ300typUnitµAµAVVMHzpFConditionsVCB=200VVEB=6VIC=50mAVCE=4V, IC=3AIC=5A, IB=0.5A VCE=12V, IE=–0.5AVCB=10V, f=1MHz2SC3856

(Ta=25°C)(Ta=25°C)

IC–VCE Characteristics (Typical)

hFE–IC Characteristics (Typical)hFE–IC Temperature Characteristics (Typical)θj-a–t CharacteristicsIC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)

Pc–Ta DeratingSafe Operating Area (Single Pulse)fT–IE Characteristics (Typical)03

2

1

00.51.02.01.5Base Current IB(A)Collector-Emitter Saturation Voltage VCE(sat)(V)

2SK3842

2006-11-17 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

2SK3842

Switching Regulator Applications, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) • High forward transfer admittance: |Yfs| = 93 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

Unit

Drain-source voltage VDSS 60 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V

Gate-source voltage VGSS ±20 V

DC (Note 1) ID 75 Drain current Pulse(t< = 1 ms) (Note 1) IDP 300 A

Drain power dissipation (Tc = 25°C) PD 125 W

Single pulse avalanche energy (Note 2) EAS 322 mJ

Avalanche current IAR 75 A

Repetitive avalanche energy (Note 3) EAR 12.5 mJ