HAL251低电压功耗霍尔传感器

HAL251the following on a single silicon chip HAL251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivitymicro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress.is special made for low operation voltage, 1.65V , to active the chip which is includes : voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of omni-polar magnetic fields for operation.The package type is in a Halogen Free version has been verified by third party Lab.Features and Benefits● CMOS Hall IC Technology ● Strong RF noise protection● 1.65 to 3.5V for battery-powered applications● Omni polar, output switches with absolute value of North or South pole from magnet ● Operation down to 1.65V , Micro power consumption ● High Sensitivity for reed switch replacement applications ● Multi Small Size option●Low sensitivity drift in crossing of Temp. range●Ultra Low power consumption at 5uA (Avg) ● High ESD Protection, HBM > ±4KV( min ) ● Totem-pole outputApplications● Solid state switch● Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip VideoSet)● Lid close sensor for battery powered devices● Magnet proximity sensor for reed switch replacement in low duty cycle applications ● Water Meter ● Floating Meter ● PDVD ● NBHAL251/ UAC1：10nF C2：100pFAbsolute Maximum Ratings At(Ta=25℃)CharacteristicsValues Unit Supply voltage,(V DD ) 4.5 V Output V oltage,(V out ) 4.5 V Reverse V oltage , (V DD ) (V OUT ) -0.3 V Magnetic flux density UnlimitedGauss Output current,(I OUT )1 mAOperating temperature range, (Ta ) -40 to +85 ℃ Storage temperature range, (Ts ) -65 to +150℃ Maximum Junction Temp,(Tj ) 150℃Thermal Resistance(θJA ) S 310 / 540 / 206 / 543 ℃/W (θJC ) 223 / 390 / 148 / 410 ℃/W Package Power Dissipation, (P D )400 / 230 / 606 / 230mWNote: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability.Electrical SpecificationsDC Operating Parameters ：Ta=25℃, V DD =1.8VParametersTest ConditionsMinTypMaxUnitsSupply V oltage,(V DD ) Operating 1.65 3.5 V Supply Current,(I DD ) Awake State 1.4 3 mA Sleep State 3.6 7 μA Average 5 10 μA Output Leakage Current,(I off ) Output off1uA Output High Voltage,(V OH ) I OUT =0.5mA(Source) V DD -0.2V Output Low Voltage,(V OL ) I OUT =0.5mA(Sink) 0.2 V Awake mode time,(T aw ) Operating 40 80 uS Sleep mode time,(T SL ) Operating 40 80 mS Duty Cycle,(D,C )0.1 % Electro-Static DischargeHBM4KVTypical Application circuitVccHAL251T / UAST / UA STE ST/UA UA 2512251E Magnetic SpecificationsDC Operating Parameters ：Ta=25℃, V DD =1.8VParameter SymbolTest ConditionsMin. Typ. Max. UnitsOperating Point B OPS S pole to branded side, B > BOP, V out On 30 55 Gauss B OPN N pole to branded side, B > BOP, V out On -55 -30 Gauss Release Point B RPS S pole to branded side, B < BRP, V out Off 10 20 Gauss B RPN N pole to branded side, B < BRP, V out Off-20 -10 Gauss HysteresisB HYS|BOPx - BRPx|10Gauss51ESTMagnetic SpecificationsDC Operating Parameters ：Ta=25℃, V DD =1.8VParameter SymbolTest ConditionsMin. Typ. Max. UnitsOperating Point B OPS N pole to branded side, B > BOP, V out On 30 55 Gauss B OPN S pole to branded side, B > BOP, V out On -55 -30 Gauss Release Point B RPS N pole to branded side, B < BRP, V out Off 10 20 Gauss B RPN S pole to branded side, B < BRP, V out Off-20 -10 Gauss HysteresisB HYS|BOPx - BRPx|10GaussOutput Behavior versus Magnetic PolarDC Operating Parameters ：Ta = -40 to 85℃, Vdd =1.8V to 3.5VParameterTest conditionOUT(ST)Test conditionOUT(SN)South poleB<Bop[(-55)~(-10)] Low B<Bop[(-55)~(-10)] Low Null or weak magnetic fieldB=0 or B < BRP High B=0 or B < BRP High North poleB>Bop(55~10)LowB>Bop(55~10)LowNorth PoleSouth PoleST PackageUA PackageVsatMagnetic Flux Density in GaussSouth PoleHAL251Performance GraphTypical Supply Voltage(V DD ) Versus Flux DensityTypical Temperature(T A ) Versus Flux DensityTypical Temperature(T A ) Versus Supply Current(I DD )Typical Supply Voltage(V DD ) Versus Supply Current(I DD )Typical Supply Voltage(V DD ) Versus Output Voltage(V DSON )Typical Temperature(T A ) Versus Output Voltage(V DSON )Package Power DissipationThe power dissipation of the Package is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, R θJA , the thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be calculated as follows:aj J(max)D R Ta -T P θ=The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature Ta of 25°C, one can calculate the power dissipation of the device which in this case is 400 milliwatts.400mW C/310C25-C 150(ST)P W D =°°°=The 310℃/W for the ST package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to achieving higher power dissipation from the Package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.Sensor Location, package dimension and markingST Package(TSOT-23) Hall Plate Chip Location(Top View) (Bottom view)251XX1230.80Location3NOTES: 1.PINOUT (See Top View at left:) Pin 1 V DD Pin 2 Output Pin 3 GND 2.Controlling dimension: mm;UA Package Hall Chip location 251XXXNOTES:1).Controlling dimension:mm 2).Leads must be free of flash and plating voids 3).Do not bend leads within 1 mm of lead to package interface.4).PINOUT: Pin 1 V DD Pin 2 GND Pin 3 Output Output Pin Assignment(Top view)123V DD GND Out251XXX2.00Location。