诺林7KW曝光机I O

i-line Scan Field Stepperi-line scan field stepper utilizes innovative platform and highspeed wafer stage to deliver maximized throughputThe NSR-SF155 i-line scan field stepper employs Skyhook Technology, where the lens module is suspended from the main body to eliminate the influence of ground or stage vibration. Coupled with increased wafer stage speed and enhanced chamber temperature stability, this system delivers throughput of ≥ 200 wafers per hour (300 mm), with optimal overlay performance.Precision Equipment Company Global Networkb NIKON PRECISION EUROPE GmbH (Germany)NIKON PRECISION KOREA LTD. (Korea) NIKON CORPORATION b NIKON TEC CORPORATION (Japan) NIKON PRECISION TAIWAN LTD. (Taiwan) b NIKON PRECISION INC. (U.S.A.)b NIKON PRECISION SHANGHAI CO., LTD. (China) b bMain Characteristics• Superior throughput Combining an optimized stepper platform with Skyhook Technology and a faster wafer stage has minimized vibration effects, while boosting stepper productivity. The NSR-SF155 enables superior throughput of ≥200 wafers per hour (300 mm). • High overlay accuracy The NSR-SF155 employs the Skyhook platform paired with a stage countermass, enhanced chamber heat controls, and optimized airflow to maintain overlay accuracy of 25 nm or better. • Low total cost of ownership Maximized yield is achieved with improved chamber heat controls and optimized throughput, thereby enabling the NSR-SF155 to deliver the lowest total cost of ownership. To further increase value, Nikon has developed a solution that enables customers to upgrade existing NSR-SF150 systems on their production lines to the NSR-SF155 configuration.b NIKON PRECISION SINGAPORE PTE LTD. (Singapore)NIKON CORPORATIONPrecision Equipment Company Planning DepartmentShin-Yurakucho Bldg., 12-1, Yurakucho 1-chome, Chiyoda-ku, Tokyo 100-8331, Japan Tel: +81-3-3216-1344 Fax: +81-3-3216-1059NIKON PRECISION TAIWAN LTD.3F-1, 2, 3, 5 No.28, Tai Yuen Street, Chu Pei City, Hsin Chu Hsien, Taiwan Tel: +886-3-552-5888 Fax: +886-3-552-5858NIKON PRECISION SINGAPORE PTE LTD.29 Woodlands I ndustrial Park E1, Northtech Lobby 3 #4-17, Singapore 757716 Tel: +65-6367-4020 Fax: +65-6367-4021NIKON PRECISION INC.IC Production EquipmentPerformance1399 Shoreway Road, Belmont, CA 94002-4107, U.S.A. Tel: +1-(650)-508-4674 Fax: +1-(650)-508-4600NIKON PRECISION SHANGHAI CO., LTD.RM.601 Xin Jin Qiao Tower, No.28 Xin Jin Qiao Road, Pudong New District, Shanghai 201206, China Tel: +86-21-5899-0266 Fax: +86-21-5899-1660NIKON PRECISION EUROPE GmbHPaul-Ehrlich-Str. 3-5, 63225 Langen, Germany Tel: +49-6103-973-0 Fax: +49-6103-973-333NIKON PRECISION KOREA LTD.17-24 Singal-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do, Korea Tel: +82-31-288-5601 Fax: +82-31-288-5609WARNINGTO ENSURE CORRECT USAGE, READ THE CORRESPONDING MANUALS CAREFULLY BEFORE USING YOUR EQUIPMENT.i-linei-line stepper provides a costeffective solution for 350 nm device mass productionThe NSR-2205i14E2 i-line stepper is a cost-effective system that delivers a maximum lens numerical aperture of 0.63 and enables resolution of 350 nm and below. With off-axis illumination capabilities and a variable NA, it supports optimization of a range of processing conditions for 350 nm device mass production.StepperThe export of this product is controlled by Japanese Foreign Exchange and Foreign Trade Law and I nternational export control regime. I t shall not be exported without authorization from the appropriate governmental authorities. Specifications and equipment are subject to change without any notice or obligation on the part of the manufacturer. Products and brand names are trademarks or registered trademarks of their respective companies. November 2010. ©2010 NI KON CORPORATI ONSpecifications©2010 NI KON CORPORATI ONhttp://www.nikon.co.jp/pecMax. 1mW CW He-Ne 633nm100-8331140-00121-12-11-5-214F03 5762-891103 3216-1344This product was developed and manufactured in the factory certified under ISO 9001.2010-2011Printed in Japan 4CEJ-SUSH-7 1011-01 TArF immersion ScannerArF immersion scanner enables 45 nm device mass production with NA of 1.30The NSR-S610C ArF immersion scanner features a projection lens utilizing immersion lithography technology to deliver an NA of 1.30. The new S610C Tandem Stage delivers maximized throughput, and coupled with Local Fill Technology and the advanced multi-axial catadioptric lens design, enables mass production of the most advanced 45 nm devices and beyond.ArF immersion ScannerArFScannerMain Characteristics• Through 40 to 45 nm resolution The 1.30 NA optics of the NSR-S610C enable 40 to 45 nm imaging with a k1 process factor of 0.30**. The ultra-high NA enables the S610C to produce all critical layers of 40 to 45 nm devices with sufficient process windows for volume production.**Resolution = k1 x (wavelength/NA), where k1 represents the process margin. k1 of 0.30 or greater is generally recognized as a requirement for volume production.ArF scanner with Tandem Stage boosts throughput by 20%, supporting mass production of 65 nm devices and beyondThe NSR-S310F ArF scanner employs the Tandem Stage—initially deployed on renowned Nikon immersion scanners—to boost throughput by 20% compared to conventional models. The 0.92 NA projection optics and POLANO polarization control deliver superior imaging capabilities, while thermal aberration control is further enhanced with optional infrared aberration control (IAC). Enabling throughput greater than 174 wafers per hour, the NSR-S310F provides optimal cost of ownership in the mass production of 65 nm or smaller devices.ArF immersion scanner with new Streamlign platform enables rapid production ramps required for 32 nm, and provides extendibility to 22 nm applications.The NSR-S620D incorporates three newly developed technologies* — Bird’s Eye Control, Stream Alignment, and the Modular2 Structure — to make it the optimal immersion scanner for double patterning. The NSR-S620D design builds upon the unique Tandem Stage and Local Fill Technologies employed in the Nikon NSR-S610C, the world’s first ArF Immersion Scanner for 45 nm node volume production.*See “Main Characteristics of the Streamlign Platform” below.Streamlign Platform• Superior imaging through POLANO polarization and Nikon projection optics The reliable Nikon 1.30 NA catadioptric projection optics, combined with sophisticated POLANO polarization technology, provides superior imaging with low flare and minimizes the impact of thermal aberrations. • High throughput, high accuracy using the Nikon optimized immersion platform Nikon Tandem Stage technology uses an exposure stage and a separate calibration stage for high throughput (130 wafers per hour) with optimal stability due to frequent system calibration. • Proven, defect-free immersion exposure Local Fill Technology is proven to eliminate scanner-induced defects such as bubbles, watermarks, and immersion-induced particles from the immersion process.PerformanceMain Characteristics of the Streamlign platform• Bird’s Eye Control Enabling superior yield • Hybrid encoder/interferometer system delivers optimal stage performance. • Dramatically improves accuracy and stability. • Provides superior focus control. • Targeting 2 nm overlay capabilities.PerformanceEncoderKrFInterferometer Wafer StageScanner• Stream Alignment Enabling optimal affordability • Straight Line Auto-Focus generates a dense map of the wafer surface to enhance focus control (using wider AF beam span). • Enables increased alignment sites with minimal productivity impact using Five-Eye FIA. • Greatly reduces wafer overhead time. • Targeting throughput up to 200 wph.Straight Line Auto-FocusTechnology that delivers revolutionary lens numerical aperture Nikon immersion lithography technology achieves an NA of over 1.0.Immersion LithographyFive-Eye FIAProjection lensIllumination Unit• Modular2 Structure Enabling rapid production ramps • Significantly faster installations - 20 day target. • Simplifies maintenance by the modular design. • Provides optimal uptime with modular design and individual components replacement. • Extendible platform enables multigenerational use.Reticle StageMetrology FrameProjection LensStepper resolution is normally expressed as resolution = k1 (process coefficient) x (light source wavelength)/NA (numerical aperture: the brightness of the projection lens), where a shorter light source wavelength and a greater projection lens NA produce finer resolution. NA is derived from NA = n x sin , where n is the refractive index of the medium through which the exposure light passes, and is the angle the exposure light forms. In air, because n = 1, a maximum NA of about 0.9 is generally believed to represent the physical limit. Pure water, however, has a much higher refractive index than air, and placing water between the lens and the wafer improves the NA to 1.0 or greater, resulting in extremely high resolution. This technique is referred to as immersion lithography.Recovery Pure waterSupply WaferKrF scanner increases throughput by 20% with Tandem Stage, enabling volume production of 110 nm or smaller devicesThe NSR-S210D KrF scanner employs the Tandem Stage—used worldwide on immersion scanners—to enhance throughput by 20% compared to conventional models. The 0.82 NA projection optics and illumination system employed ensure exceptional imaging performance with low flare, while the system is also highly resistant to thermal effects. With throughput capabilities of more than 176 wafers per hour, the NSR-S210D greatly reduces KrF cost of ownership for mass production of 110 nm devices and beyond.Scanning motionWafer stageProjection lensPerformancePure water (n=1.44)WaferImmersion LithographyResistArF excimer laser lightWafer Stage。

Agilent U8030 SeriesTriple-Output DC Power SuppliesData SheetAgilent extends its family of basic DC power supplies to include a one of a kind power supply that offers up to 375 W power at three outputs. Equipped with output sequencing capability, it allows you to generate output sequences even with minimal programming skills. Each power sup-ply is also built with excellent load regulation and clean output noise for continued stability. With these and many other features, you get a solid and reliable triple-output power sup-ply at an unsurpassed performance.The U8030 series offers twomodels- the U8031A and U8032A, each with different voltage andcurrent ratings to cater to your needs. Both models are well-regulatedcompact bench-tops with total output of 375 W, making it an ideal power source alternative in electronics manufacturing, research and develop-ment as well as education sector.Generate power supply output sequences -No ExtensiveProgramming Skills NecessaryThe output sequencing capability is carefully thought out for your convenience and ease when operating. Designed to perform automation function, our U8030 series is well-suited even for those with minimal programming skills. With easy-to-use knob and intuitive keypads, you can now set yourdesired output sequences for margin test, burn-in test and other general purpose tasks in an industrial setting.Higher Power. Better Reliability.Unrivalled Performance.Key Features• Provides total power of 375 W for three outputs• Output sequencing capability• Excellent load and line regulation (CV: < 0.01% + 2 mV; CC: < 0.02% + 2 mA) ensures stable output • Provides clean output with≤ 1 mVrms (0.5 mVrms typical) noise• Fast < 50 µs transient response for stable testing• Dual display shows both voltage and current reading• Over-voltage and over-current protection• Security features: keypad lock and physical lock mechanismUnrivalled Performance- With Low Output Noise and Excellent Load RegulationThe U8030 series provides excellent load and line regulation(CV: < 0.01% + 2 mV; CC: <0.02% + 2 mA) to ensure stable output even when load changes. This is crucial especially when dealing with noise-sensitive circuits that demand clean power. At a wide bandwidth of 20 Hz to 20 MHz, our bench power supplies continue to provide clean output at the lowest Vrms ≤ 1 mVrms (0.5 mVrms typical), leaving your signals uncontaminated and ensuring minimal interference to your Device-Under-Test (DUT).Added Safety Features-With OVP, OCPand Physical LockMechanismSafety is an important considerationwhen dealing with power. Users maynot only want to protect themselvesfrom exposure to current, but alsothe additional costs incurred to theirinvestment (DUT). Our U8030 seriespower supplies are integrated withan array of security features such asover-voltage (OVP) and over-current(OCP) protection to mitigate theserisks.Additionally, security features suchas keypad locking capability preventsaccidental front panel usage whilephysical lock mechanism which isstrategically located at the rear ofthe unit provides secure instrumentstorage.Differentiated Features-Allowing You to WorkBetterBoth models of the U8030 seriescome with a set of features to suityour needs while remaining easy touse. The LCD screen displays bothvoltage and current readings in a one-view panel while the all ON/OFF but-ton allows multiple outputs to be con-trolled simultaneously. Additionally,the auto-track feature simplifies setupbetween output 1 and output 2. Withthese, you get a solid bench powersupply plus a set of convenient andeasy to use features.Figure 1. Output sequencing made easy with intuitive keypads Figure 2. Backlight on/off feature withdual reading (voltage and current) on anLCD displayFigure 3. Simplifies Output 1 and Output 2setup with tracking featureFront Panel Descriptionwithout a PCLCD display:Channel control:Allows channels to be controlled individually/simultaneously (ON/OFF)Tracking:Auto-tracking between output 1 and output 2 with single controlEssential security features: Over-voltage protection (OVP)/Keypad lock/unlock:Locks front panel to prevent accidental changeFigure 4. The U8032A as illustratedKey SpecificationsElectrical SpecificationsTable 1.1 Electrical specifications 1U8031A U8032A Total power output (W)0 – 375 WVoltage output (V)Output Channel 1 & 2 (@ 0 to 40 °C)0 to 30 V 0 to 60 VCurrent output (A)Output Channel 1 & 2 (@ 0 to 40 °C)0 to 6 A 0 to 3 ANumber of outputs Three isolated outputs• Two variable: CV and CC operation• One fixed: CV operation only5 V fixed output 2 Output Channel 3• Voltage/Current output: 5 V, 3A• Output accuracy: ≤ 5% or (5 V ± 0.25 V) • Vrms: < 2 mVrms, or Vpp: < 50 mVpp • Load and line regulation: ≤ 5 mV• Overload condition: 3 A + 20% (typical)Line & load regulation (for variable output)CV: < 0.01% + 2 mV CC: < 0.02% + 2 mARipple & noiseBased on calculation at temp 18 - 28 °C and bandwidth at 20 Hz to 20 MHz CV: ≤1 mVrms, 0.5 mVrms(typical) or ≤ 10 mVpp, 5 mVpp(typical) CC: ≤ 1 mArmsLoad transient response timeWithin 15 mV from full load to half loadand from half load to full load< 50 usStability (output drift)Following 30 minutes warm-up, change in output over 8 hour under constant load, line, and ambient temperature.Voltage: < 0.02% Current: < 0.1%Programming accuracy (23 °C ± 5 °C)CV: ≤ 0.25% + 15 mVCC: ≤ 0.30% + 15 mAMeter readback accuracy (23 °C ± 5 °C)CV: ≤ 0.25% + 10 mVCC: ≤ 0.25% + 10 mAProgramming/meter resolution Voltage: 10 mV(4 digits)Current: 10 mA (3 digits)Maximum output float voltage±240 Vdc1. The specifications stated are based on a 1 hour warm-up period.2. Ripple and noise, load transient response time, stability (output drift), programming accuracy, and meter readback accuracy specificationsnot available for Output Channel 3.Physical characteristicsTable 1.2 Physical characteristicsU8031A/U8032ADisplay LCD with amber backlightRotary knob for reading adjustment YesSize4U, half rackDimensions (H x W x D)179.0 x 212.3 x 379.0 mmWeight8.2 kgSupplemental characteristicsTable 1.3 Supplemental characteristicsU8031A U8032ATemperature coefficient (for 12 months) ±(% of output + offset)Output• CV: (0.01% + 1 mV)/°C • CC: (0.01% + 1 mA)/°C OVP, OCP• CV: < 0.05%/°C• CC: < 0.05%/°COutput voltage overshootDuring turn-on or turn-off of AC power, if output control isset less than 1 V< 1 VVoltage programming speed to within 1 % of total excursion Up Full loadNo loadDown Full loadNo load 30 V60 V 80 ms80 ms30 ms150 ms200 ms100 ms30 ms300 msOver temperature protection YesLast memory setting enabled YesThree memory storage locations for voltage and current settings YesErasing non-volatile memory Yes, erasable through front panelRack mount capability Yes, front panel and rear have rack-mountable supportAC power input specificationsTable 1.4 AC power input specificationsU8031A/U8032AInput power option (selectable)100 Vac ± 10%, 47 to 63 Hz115 Vac ± 10%, 47 to 63 Hz230 Vac± 10%, 47 to 63 HzMaximum input power600 VAFuse External, located at the rear panelEnvironmental specificationsTable 1.5 Environmental specificationsU8031A/U8032AOperating temperature0 to 40 °CStorage temperature–40 to 70 °CHumidity15% RH (relative humidity) to 85% RH at 40 °C (non condensing) Altitude Up to 2000 mFan acoustic noise• No load: follow Agilent Class CO, 45 dB sound pressureand 50 dB sound power• Full load: follow Agilent Class GP, 55 dB sound pressureand 60 dB sound powerEnvironment of use• Installation category II• Pollution Degree 2Connection specificationsTable 1.6 Connection specificationsU8031A/U8032AOutput connections+Out, –Out, and chassis ground on the front panel.(Either positive or negative output terminal may be grounded or can beoperated floating at up to a maximum of 240 V off ground. Total outputvoltage to ground must not exceed 240 Vdc)Binding posts Output binding post located horizontally and side by sideI/O connections N/AAC input 3 pins standard IEC AC power connector with fuse and lineselection at the rearProtection featuresTable 1.7 Protection featuresU8031A U8032A Overvoltage protection accuracy ± (% of output + offset)< 0.5% +0.5 VOvervoltage protection programmable range0.1 to 33.0 V0.1 to 66.0 V Overvoltage protection response time< 10 msOvercurrent protection accuracy ± (% of output + offset)< 0.5% + 0.5 AOvercurrent protection programmable range0.1 to 6.6 A0.1 to 3.3 A Overcurrent protection response time< 10 msOrdering InformationIncluded documentation:U8030 Series Product Reference CD-ROMAdditional documentation:U8031A-ACF Japanese language user guide, printedU8031A-ABA English language user guide, printedU8032A-ACF Japanese language user guide, printedU8032A-ABA English language user guide, printedCalibration document:U8031A-UK6 Commercial calibration with test result dataU8032A-UK6 Commercial calibration with test result dataOther Options:E3600A-100 Test lead kitOption 1CM Rack-mount kitRack-mount kits:To rack-mount a single instrument:Adapter kit (P/N 5063- 9245)Revised: June 8, 2011Product specifications and descriptions in this document subject to change without notice.© Agilent Technologies, Inc. 2011Published in USA, December 14, 20115990-9321EN。

Specifications: I.E.C. Equipment Classification:
Type BF, Class 1
Typical Operating Requirements: Lamp: Camera Link: Nurse Assist: Voltage Input Range: Max Power:
Clearly True High Definition TM
Clearly True High Definition TM
LS7700 Light Source
Catalog Number LS7700 LS7701
Description 300w Xenon Light Source 300w Replacement Bulb with Heat Sync
5.15" (H) x 14.0" (W) x 14.0" (L) 13.08 cm (H) x 35.6 cm (H) x 35.6 cm (L) Approx. 16 lbs.
© 2008 Linvatec Corporation, a subsidiary of ConMed Corporation, 02/2008,ource
Introducing the HD compatible 300-watt Xenon Light Source from ConMed Linvatec. This stand alone, user-friendly light source provides optimal light output so even the most challenging surgical cases are adequately illuminated.

EconoPIM ™2 模块 采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管 带有温度检测NTC 和预涂导热介质特性•电气特性-V CES = 1200 V-I C nom = 50 A / I CRM = 100 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-预涂导热介质-焊接技术可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。

描述FP50R12N2T7PEconoPIM ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4二极管,整流器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5IGBT, 斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6Diode-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 10封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 11模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .191封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE35nH 模块引线电阻,端子-芯片R AA'+CC'T H=25°C, 每个开关 5.5mΩ模块引线电阻,端子-芯片R CC'+EE'T H=25°C, 每个开关 4.8mΩ储存温度T stg-40125°C 最高基板工作温度T BPmax150°CM5, 螺丝36Nm 模块安装的安装扭距M根据相应的应用手册进行安装重量G180g注:The current under continuous operation is limited to 50 A rms per connector pin.Storage and shipment of modules with TIM => see AN2012-072IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 90 °C50A 集电极重复峰值电流I CRM t P = 1 ms100A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 50 A, V GE = 15 V T vj = 25 °C 1.50 1.80VT vj = 125 °C 1.64T vj = 175 °C 1.72栅极阈值电压V GEth I C = 2 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.92µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V11.1nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.039nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.01mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.059µs T vj = 125 °C0.061T vj = 175 °C0.062上升时间(感性负载)t r I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.043µs T vj = 125 °C0.047T vj = 175 °C0.049关断延迟时间(感性负载)t doff I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.290µs T vj = 125 °C0.380T vj = 175 °C0.420下降时间(感性负载)t f I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.110µs T vj = 125 °C0.200T vj = 175 °C0.270开通损耗能量 (每脉冲)E on I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 7.5 Ω, di/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 5.07mJ T vj = 125 °C 6.76T vj = 175 °C7.72关断损耗能量 (每脉冲）E off I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 7.5 Ω, dv/dt =2900 V/µs (T vj = 175 °C)T vj = 25 °C 3.37mJ T vj = 125 °C 5.31T vj = 175 °C 6.58(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C190At P≤ 7 µs,T vj=175 °C180结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material0.777K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F50A 正向重复峰值电流I FRM t P = 1 ms100A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C465A²sT vj = 175 °C420表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM I F = 35 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C31A T vj = 125 °C39T vj = 175 °C45恢复电荷Q r I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 3.96µC T vj = 125 °C7.37T vj = 175 °C9.89(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗（每脉冲）E rec I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 1.31mJ T vj = 125 °C 2.52T vj = 175 °C 3.46结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.13K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4二极管,整流器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1600V 最大正向均方根电流(每芯片)I FRMSM T H = 60 °C70A最大整流器输出均方根电流I RMSM T H = 60 °C100A 正向浪涌电流I FSM t P = 10 ms T vj = 25 °C560AT vj = 150 °C435I2t-值I2t t P = 10 ms T vj = 25 °C1570A²sT vj = 150 °C945表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A T vj = 150 °C 1.05V 反向电流I r T vj = 150 °C, V R = 1600 V1mA 结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.10K/W 允许开关的温度范围T vj, op-40150°C5IGBT, 斩波器表 9最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 110 °C25A 集电极重复峰值电流I CRM t P = 1 ms50A 栅极－发射极峰值电压V GES±20V表 10特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 25 A, V GE = 15 V T vj = 25 °C 1.60 1.85VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.525 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.395µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 4.77nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.017nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.004mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.041µs T vj = 125 °C0.043T vj = 175 °C0.044上升时间(感性负载)t r I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.025µs T vj = 125 °C0.028T vj = 175 °C0.030关断延迟时间(感性负载)t doff I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.230µs T vj = 125 °C0.320T vj = 175 °C0.350下降时间(感性负载)t f I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.140µs T vj = 125 °C0.220T vj = 175 °C0.280(待续)表 10(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值开通损耗能量 (每脉冲)E on I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 9.1 Ω, di/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.47mJ T vj = 125 °C 2.05T vj = 175 °C 2.39关断损耗能量 (每脉冲）E off I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 9.1 Ω, dv/dt =3120 V/µs (T vj = 175 °C)T vj = 25 °C 1.65mJ T vj = 125 °C 2.58T vj = 175 °C 3.13短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C90At P≤ 7 µs,T vj=175 °C85结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material1.19K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.6Diode-斩波器表 11最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F25A 正向重复峰值电流I FRM t P = 1 ms50A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C125A²sT vj = 175 °C95表 12特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 25 A, V GE = 0 V T vj = 25 °C 1.83 2.30VT vj = 125 °C 1.70T vj = 175 °C 1.63(待续)表 12(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复峰值电流I RM I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C21.7A T vj = 125 °C26.7T vj = 175 °C29.8恢复电荷Q r I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.69µC T vj = 125 °C 3.29T vj = 175 °C 4.29反向恢复损耗（每脉冲）E rec I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C0.63mJ T vj = 125 °C 1.28T vj = 175 °C 1.69结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.63K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.7负温度系数热敏电阻表 13特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7 负温度系数热敏电阻9电路拓扑图图 110封装尺寸图 211模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002022-02-01Initial version商标所有参照产品或服务名称和商标均为其各自所有者的财产。