肖特基二极管MBR系列命名规则

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MBR0520-MBR0580SOD-123Schottky Barrier Rectifier Diode肖特基势垒整流二极管■Features 特点Low forward voltage drop 低正向压降High current capability 高电流能力Surface mount device 表面贴装器件Case 封装:SOD-123■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号MBR0520MBR0530MBR0540MBR0560MBR0580Unit 单位Device Marking 产品印字R2R3R4R6R8V Peak Reverse Voltage 反向峰值电压V RRM 2030406080V DC Reverse Voltage 直流反向电压V R 2030406080V RMS Reverse Voltage 反向电压均方根值V R(RMS)1421284256V Forward Rectified Current 正向整流电流I F 0.5A Peak Surge Current 峰值浪涌电流I FSM 5.5A Power Dissipation 耗散功率P D 410mWThermal Resistance J-A 结到环境热阻R θJA 245℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg -50to+125℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号MBR0520MBR0530MBR0540MBR0560MBR0580Unit 单位Condition 条件Reverse Voltage 反向电压V R 2030406080V I R =1mA Forward Voltage 正向电压V F 0.450.550.550.70.8V I F =0.5A Reverse Current 反向电流I R 80µA V R =V RRMDiode Capacitance 二极管电容C T30pFV R =4V,f=1MHz安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MBR0520-MBR0580■Typical Characteristic Curve典型特性曲线■Dimension外形封装尺寸SOD-123。

MBR1040CT MBR1040FCT MBR1040DC肖特基二极管参数PDF规格书MBR1040FCT等肖特基均采用俄罗斯Mikron芯片，28条台湾健鼎测试线，确保MBR1040FCT的高可靠性肖特基二极管MBR1040FCT参数规格：肖特基二极管MBR1040FCT电流：10A；肖特基二极管MBR1040FCT电压：40V；肖特基二极管MBR1040FCT管装：50/管；盒装：1000PCS/盒。

肖特基二极管广泛应用于开关电源、变频器、驱动器等电路，作高频、低压、大电流整流二极管、续流二极管、保护二极管使用，或在微波通信等电路中作整流二极管、小信号检波二极管使用。

MBR1040CT ITO-220AB肖特基二极管PDF资料MBR1040CT肖特基类型：高结温芯片，品牌：ASEMI，应用市场：电源，小家电，LED电源，各式充电器，开关电源，LED显示屏等。

MBR1040CT肖特基相关参数如下：MBR1040CT电压Vrrm:40VMBR1040CT电流If平均：10AMBR1040CT正向电压Vf最大：0.54VMBR1040CT电流，Ifs最大：120AMBR1040CT工作温度范围：-40°C to+150°CMBR1040CT封装形式：TO-220/TO-220F/ITO-220MBR1040CT反向恢复电流，Irrm:20UA肖特基系列型号：MBR1040CT,MBR1045CT,MBR1060CT,MBR1060FCT,MBR10100CT,MBR10100FCT,MBR10150FCT,MBR10150CT,MBR10200FCT,MBR10200CT肖特基二极管封装：TO-251,TO-252,TO-263,TO-220,TO-247,TO-3P。

编辑：GGASEMI肖特基二极管的型号众多，接下来所列型号主要以电流电压大小，分为大类，再以封装区分作为辅助分类。

ASEMI肖特基二极管型号大全，找找MBR4045PT属于哪一类1A~5A 20V~150V 肖特基二极管两者型号都在用SS封装：SS110 、SS14 。

10A 45V~200V 肖特基二极管采用TO-220AC封装的有：MBR10200AC、MBR10150AC、MBR10100AC、MBR1060AC、MBR1045AC、MBR1040AC采用TO-220封装的有：MBR1040FCT、MBR10200FCT、MBR10100FCT、MBR10150FCT、 MBR1040CT、MBR10200CT、MBR1040FCT、MBT1045FCT、 MBR1045CT、MBR1040CT、 MBR1045CT、MBR1060CT、MBR1060FCT、MBR10100CT、MBT10100FCT、MBR10150CT该封装有FCT和CT结尾的型号命名，区别于前者是塑封封装、后者是铁头封装。

采用TO-251封装的有：BD1045CT、BD1060CT、BD10100CT、BD10150CT、BD10200CT、BD1040CT采用TO-252封装的有：BD1040CS、BD1045CS、BD1060CS、BD10100CS、BD10150CS、 BD10200CS 采用TO-263封装的有：MBR10200DC、MBR1040DC、MBR1045DC、MBR1060DC、MBR10100DC、MBR10150DC20A 45V~200V肖特基二极管采用TO-220AC封装的有：MBR20200AC、MBR20150AC、MBR20100AC、MBR2060AC、 MR2045AC采用TO-251封装的有：BD2060CT、BD2045CT、BD20100CT、BD20150CT、BD20200CT、采用TO-252封装的有：BD20100CS、BD20150CS、BD20200CS、BD2045CS、BD2060CS采用TO-263封装的有：MBR2045DC、MBR2060DC、MBR20100DC、MBR20150DC、MBR20200DC采用TO-220封装的有：MBR2045CT、MBR2045FCT、MBR20200FCT、MBR2060CT、 MBR20100FCT、MBR2060FCT、MBR20100CT、MBR20100FCT、 MBR20150CT、MBR20150FCT、MBR20200CT、MBR20200FCT采用TO-247/3封装的有：MBR20200PT30A 45V~200V 肖特基二极管采用TO-247/3P封装的有：MBR3045PT、MBR3060PT、MBR30100PT、MBR30150PT、MBR30200PT采用TO-263封装的有：MBR30200DC、MBR3060DC、MBR30100DC、MBR30150DC、MBR3045DC采用TO-220封装的有：MBR3045CT、MBR3045FCT、MBR3060CT、MBR3060FCT、MBR30100CT、MBT30100FCT、MBR30150CT、MBR30150FCT、 MBR30200CT、MBR30200FCT 40A 45V~200V 肖特基二极管采用TO-263封装的有：MBR4045DC、MBR40200DC、MBR4060DC、MBR40100DC、MBR40150DC采用TO-247/3P封装的有：MBR40200PT、MBR4045PT、MBR4060PT、MBR40100PT、 MBR40150PT、采用TO-220封装的有：MBR4045FCT、MBR4045CT、MBR4060FCT、MB40100FCT、 MBR4060CT、MBR40100CT60A 45V~220V 肖特基二极管采用TO-247/3P封装的有：MBR6045PT、MBR6060PT、MBR60100PT、MBR60150PT、 MBR60200PT 10A~60A 20V~100V 肖特基二极管采用ITO-220AB封装的有：SBT10150UCT、SBT10100UCT、SBT1060UCT、SBT1045UCT、SBT10150VCT、SBT10100VCT、SBT1060VCT、SBT1045VCT、SBT30150UCT、SBT2045VCT、SBT2060VCT、SBT20100VCT、SBT20150VCT、SBT2045UCT、 SBT2060UCT、SBT20100UCT、 SBT20150UCT、SBT3045VCT、SBT3060VCT、SBT30100VCT、 SBT30150VCT、SBT3045UCT、SBT3060UCT、SBT30100UCT、SBT1045UFCT、SBT30100UFCT、SBT1060UFCT、SBT10150VFCT、SBT10100VFCT、SBT1060VFCT、SBT1045VFCT、SBT10100UFCT、SBT2045VFCT、SBT10150UFCT、 SBT2060VFCT、SBT20100VFCT、SBT20150VFCT、SBT2045UFCT、SBT2060UFCT、SBT20100UFCT、SBT20150UFCT、SBT3045VFCT、SBT3060VFCT、SBT30100VFCT、 SBT30150VFCT、SBT3045UFCT、SBT3060UFCT、SBT30150UFCT、SBT1045UFCT、 SB10100LCT、SB10150LCT、SB1045LFCT、SB1045LFCT、SB30100LFCT、 SB1060LFCT、SB30150LFCT、SB10100LFCT、SB2045LFCT、SB10150LFCT、SB2060LFCT、SB20100LFCT、SB3060LCT采用TO-220AB封装的有：SB1060LCT、SB30150LCT、SB30150LCT、SB10100LCT、SB2060LCT、SB10150LCT、SB20150LCT、SB3060LCT、SB30100LCT、SB1045LCT采用TO-277封装的有：10V45这款肖特基二极管型号是超低压降、贴片小封装的。

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MBR1080 THUR MBR10100
Dual High-Voltage Schottky Rectifiers
REV:1.01
The forward voltage and forward current curve
The reverse leak current and the reverse voltage (single-device) curve
MBR1080 THUR MBR10100 Dual High-Voltage Schottky Rectifiers
◆ Half Bridge Rectified、Common Cathode Structure. Multilayer Metal -Silicon Potential Structure. Low Power Waste，High Efficiency. Beautiful High Temperature Character. Have Over Voltage protect loop，high reliability. RoHs Product.
MBR10100
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修订内容
ＷＷＷ．ＳＵＮＮＹＳＥＭＩ．ＣＯＭ
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VRRM= 100V IF(AV)= 10A
Circuit and Protection Circuit.
■ MBR1080、MBR1090、MBR10100 Schottky diode,in the manufacture uses the main process technology includes: Silicon epitaxial substrate, P+ loop technology,The potential metal and the silicon alloy technology, the device uses the two chip, the common cathode, the plastic package structure.