FDD4243中文资料
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FDD4243中⽂资料November 2006
FDD4243 40V P-Channel PowerTrench ? MOSFET
2006 Fairchild Semiconductor Corporation FDD4243 Rev.C
http://www.doczj.com/doc/c9a25bda33d4b14e85246837.html
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FDD4243 40V P-Channel PowerTrench ? MOSFET
-40V, -14A, 44m ?Features
Max r DS(on) = 44m ? at V GS = -10V, I D = -6.7A Max r DS(on) = 64m ? at V GS = -4.5V, I D = -5.5A
High performance trench technology for extremely low r DS(on) RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench ? technology todeliver low r DS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
Application
Inverter Power Supplies
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter
Ratings Units V DS Drain to Source Voltage -40V V GS Gate to Source Voltage
±20V
I D Drain Current -Continuous (Package limited) T C = 25°C
-14A -Continuous (Silicon limited) T C = 25°C (Note 1)-24 -Continuous T A = 25°C (Note 1a)-6.7 -Pulsed
-60E AS Single Pulse Avalanche Energy (Note 3)84mJ P D Power Dissipation T C = 25°C
42W Power Dissipation (Note 1a)3T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C R θJC Thermal Resistance, Junction to Case
3.0°C/W
R θJA
Thermal Resistance, Junction to Ambient (Note 1a)
40
Device MarkingDevice Package Reel Size Tape Width Quantity FDD4243
FDD4243
D-PAK(TO-252)
13’’
12mm
2500 units
G S
D
TO -252D-PAK (TO-252)
S
G
D
FDD4243 40V P-Channel PowerTrench ? MOSFET
FDD4243 Rev.C http://www.doczj.com/doc/c9a25bda33d4b14e85246837.html
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Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS Drain to Source Breakdown Voltage I D = -250µA, V GS = 0V
-40 V ?BV DSS ?T J Breakdown Voltage Temperature Coefficient
I D = -250µA, referenced to 25°C
-32
mV/°C I DSS Zero Gate Voltage Drain Current V DS = -32V, -1µA V GS = 0V
T J = 125°C
-100I GSS
Gate to Source Leakage Current
V GS = ±20V, V GS = 0V
±100
nAOn Characteristics V GS(th)Gate to Source Threshold Voltage V GS = V DS , I D = -250µA -1-1.6-3V ?V GS(th) ?T J Gate toSource Threshold Voltage Temperature Coefficient I D = -250µA, referenced to 25°C 4.7 mV/°C
r DS(on)Drain to Source On Resistance V GS = -10V, I D = -6.7A
3644m ?V GS = -4.5V, I D = -5.5A
4864V GS = -10V, I D = -6.7A, T J = 125°C 5369
g FS
Forward Transconductance
V DS = -5V, I D = -6.7A
16
S
Dynamic Characteristics
C iss Input Capacitance V DS = -20V, V GS = 0V,f = 1MHz 11651550pF C oss Output Capacitance
165220pF C rss Reverse Transfer Capacitance
90135
pF R g
Gate Resistance
f = 1MHz
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Switching Characteristics
t d(on)Turn-On Delay Time V DD = -20V, I D = -6.7A V GS = -10V, R GEN = 6?
612ns t r Rise Time
1526ns t d(off)Turn-Off Delay Time 2235ns t f Fall Time
714ns Q g(TOT)Total Gate Charge at 10V V DD = -20V, I D = -6.7A V GS = -10V
2129
nC Q gs Gate to Source Gate Charge 3.4nC Q gd
Gate to Drain “Miller” Charge
4
nC
Drain-Source Diode Characteristics
V SD Source to Drain Diode Forward Voltage V GS = 0V, I S = -6.7A (Note 2) 0.86 1.2V t rr Reverse Recovery Time I F = -6.7A, di/dt = 100A/µs
2943ns Q rr
Reverse Recovery Charge
30
44nC
Notes:
1:R θJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined asthe solder mounting surface of the drain pins. R θJC is guaranteed by design while R θJC is determined by the user’s boarddesign.2:Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3:Starting T J = 25°C, L = 3mH, I AS = 7.5A, V DD = 40V, V GS = 10V.
a. 40°C/W when mounted on a 1 in 2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
FDD4243 Rev.C3
FDD4243 Rev.C4
FDD4243 Rev.C5
Rev. I22
