下载文档原格式
高二练习题制作古董汽车模型英语作文In recent times, the trend of creating antique car models has gained significant popularity among high school students, particularly those in their second year. This practice not only serves as a creative outlet but also enhances their cognitive and technical skills. Crafting a replica of an antique car involves meticulous attention to detail, precision, and dedication.The process typically begins with comprehensive research on the chosen antique car model. Students delve into historical archives, vintage catalogs, and online resources to gather detailed information regarding the design, features, and specifications of the vehicle. This initial phase not only broadens their knowledge of automotive history but also helps them understand the intricacies of the model they aim to replicate.After acquiring sufficient knowledge, students move on to the planning and design stage. This crucial step involves sketching the blueprint of the model, determining the materials required, and outlining a systematic approach to the construction process. Attention to detail is paramount during this phase, as even minor deviations can impact the authenticity and quality of the final product.Once the planning is complete, students embark on the construction phase, where they bring their vision to life. Working with precision tools and specialized materials, they meticulously assemble each component of the model, focusing on accuracy and craftsmanship. This stage demands patience and perseverance, as the intricate nature of the task requires careful attention to every detail.As the antique car model begins to take shape, students devote countless hours to refining and perfecting each element. From painting and detailing to finetuning the proportions, every step is executed with precision and care. This handson approach not only hones their technical skills but also fosters a sense of pride and accomplishment as they witness their creation evolve.Upon completion, the finished antique car model stands as a testament to the students' dedication and skill. Each intricate detail reflects their passion for craftsmanship and their commitment to excellence. Displaying the model showcases their talent and serves as a source of inspiration for others interested in the art of model making.In conclusion, the process of creating a replica of an antique car model is a rewarding and enriching experience for high school students. It nurtures their creativity, enhances their technical skills, and instills a sense of discipline anddedication. Through this practice, students not only develop a deeper appreciation for automotive history but also cultivate valuable traits that will serve them well in their academic and professional pursuits.。
Elite Power SimulatorUser Guide1 2 31 2 3onsemi’s online Elite Power Simulator Powered by •PLECS is a system level simulator that facilitates the modeling and simulation of complete systems with optimized device models for maximum speed and accuracy.PLECS is not a SPICE-based circuit simulator, where the focus is on low-levelbehavior of circuit components .•Power transistors are treated as simple switches that can be easily configured to demonstrate losses associated with conduction and switching transitions.•The PLECS models, referred to as “thermal models”, are composed of lookup tables for conduction and switching losses, along with a thermal chain in the form of a Cauer or Foster equivalent network.•During simulation, PLECS interpolates and/or extrapolates using the loss tables to get the bias point conduction and switching losses for the circuit operation./elite-power-simulatorElite Power Simulator FeaturesBroad Range ofCircuit Topologies Covering DC-DC, AC-DC, and DC-AC applications, including 32 circuit topologies in industrial (DC fast charging, UPS, ESS, solar inverters), automotive (OBC, traction), and non-traction spacesCorner SimulationCapability onsemi’s PLECS models go beyond nominal data from datasheets to include industry first corner simulation based on physical correlations in the manufacturing environment.Soft Switching Models onsemi provides industry first PLECS models valid for soft switchingapplications such as DC-DC LLC and CLLC Resonant, Dual Active Bridge, and Phase Shifted Full Bridge.Loss & Thermal DataPlottingExplore device conduction loss,switching energy loss, and thermalimpedance in a multifunctional 3Ddata visualization utility.Custom PLECS ModelUploadInterface with onsemi’s industry firstSelf-Service PLECS ModelGenerator(SSPMG) to simulate withmodels tailored to your application.Flexible Design &Fast Simulation ResultsFlexible to capture adjustments tovarious attributes such as, gate driveimpedance, cooling designs, andload profiling./elite-power-simulatoronsemi’s State-of-the-Art PLECS Models•Typical industry PLECS models are composed of measurement-based loss tables that are consistent with datasheets provided by the manufacturer.There are four major problems with this approach:1.The switching energy loss data is dependent on the parasitics of the measurements set ups and circuits.2.The conduction and switching energy loss data is limited and thus is often not dense enough to ensureaccurate interpolation and minimal extrapolation by PLECS.3.The loss data is based on nominal semiconductor process conditions only.4.The switching energy loss data comes from datasheet double pulse generated loss data. This means thePLECS models are only valid for hard switching topology simulation. The models are highly inaccurate if used in soft switching topology simulation.•onsemi’s Self-Service PLECS Model Generator (SSPMG) provides solutions to all four problems.•Ultimate power is delivered to the user to build PLECS models tailored for the user’s application. Unleash the power here: /self-plecs-generatorDeploying PLECS Models in Elite Power SimulatorCorner PLECS ModelsProcess ConditionR DSon , V th , BVCapacitance, Device RGConductionLossSwitching EnergyLossNominalNominal Nominal Nominal Nominal Best Case Conduction Loss, Worst Case Switching LossLow High Low High Worst Case Conduction Loss, Best Case Switching LossHighLowHighLow•Conventional PLECS models based on measurements are only valid for the typical or nominal process case in manufacturing. onsemi has developed accurate corner PLECS models based on real manufacturing distribution.•Physics dictates that worst case conduction and switching losses do not happen simultaneously for example.•Depending on the application, the influence of conduction and switching energy losses on the overall system performance will vary. The onsemi corner PLECS models provide the user the flexibility to investigate the entire correlated space.•Accurate corner and statistical modeling covered in detail in−SiC MOSFET Corner and Statistical SPICE Model Generation –Proceeding of International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 154-147, September 2020•For Hard Switching , the conventional Double Pulse Test is the good method to calculate losses for models.•For Soft Switching , it depends on the topology and the operating mode (Transition or Switching)−The Double Pulse Test is NOT representative of SoftSwitching. Using double pulse switching energy losses in the simulation of a Soft Switching Topology is highly inaccurate.−A Soft Switching energy loss schematic is implemented in SSPMG to deliver Soft Switching models accurate for topologies such asDC-DC LLC and CLLC Resonant, Dual Active Bridge, Phase Shifted Full Bridge, othersHard vs. Soft Switching Energy LossesH a r d S w i t c h i n g S o f t S w i t c h i n gOutline of User Guide123Access Elite Power Simulator with MYON AccountMYON MyON is required to use the Elite Power SimulatorLoginReturning UserFirst Time UserAccess Through Direct Link or Product PageIn addition to direct access to the Elite Power Simulator/elite-power-simulatorAccess is available on each EliteSiC Product Page.Learn more about EliteSiC at/silicon-carbideOutline of User Guide123Step 1: Select Application and TopologyApplication choice filters the available topologiesBasic circuit schematic displayedTopologiesgrouped byconverter classStep 2: Select DeviceInputs used to filtervalid devicesChoose discretes ormodulesSelect device to move onto next step Direct datasheet downloadStep 3: Configure Device Set parallel devicesLink to product pageUpload custom PLECS model from onsemi’s Self-Service PLECS Model Generator (SSPMG)Set circuit RGSet deviceprocess corner condition View loss and thermal dataView Device Loss Data SelectMOSFET orBody DiodeToggle on/offtemperatures in 3D plotInteractive 3D plotToggle table datawith temperature View loss dataView Device Thermal Data View thermal chainStep 4: Configure Circuit ParametersSet Circuit parameters, varies by topologySet modulation scheme, varies by topologyStep 5: Configure CoolingSet Thermal interface resistanceConfigure Heat sink as ideal with fixed temperatureor input custom thermal impedanceCustom Heat Sink Thermal Impedance UtilityChoose Foster or Cauer formatwith automatic conversion featureUp to 5 rungs possibleToggle log/linear Y axisStep 6a: Run SimulationDetailed temperature, loss,and efficiency reportedPivot table,export csv LaunchSimulationStep 6b: View PlotsZooming and cursor featuresStep 6c: Compare Multiple Simulation CasesCompare•Device Selection•Device Configuration✓Corner process loss data✓SSPMG Model•Circuit Parameters•CoolingCompare Results Go back to steps 2, 3, 4, or 5 to make changesStep 7: Review Summary TableDownload PLECS ModelsHighlight rows to be print or downloaded to CSVLoad Profile SimulationTopologies with Load Profiling NPC inverter (1 phase, 3 level)NPC inverter (3 phase, 3 level)T-Type inverter (1 phase, 3 level)T-Type inverter (3 phase, 3 level)ANPC inverter (1 phase, 3 level)ANPC inverter (3 phase, 3 level)Inverter (3 phase, 2 level, grid load)Inverter (3 phase, 2 level, motor load)Traction Inverter (3 phase)•Load profile simulation enables power and thermal estimations at multiple, user-defined operating points •Simple intuitive flowLoad ProfileSet up parameter profilesSetupLinearrampingwhenstepped Set up time intervalschanges notenabledAdd orsubtracttimeintervals Real time plotting ofload profileparameters forinspection beforelaunching simulationLoad Profile Simulation Mission Profilesimulation button isenabled (orange)when any circuitparameter is enabledwith a load profileExample Load Profile Simulation ResultsLosses can be tracked over the load profileby enabling the cursor Junction TemperatureQuestion?Have questions, comments, or need support with your Self-Service PLECS Model Generator needs? We’re here to help! Write us an email at ********************.•Self-Service PLECS Model Generator: /self-plecs-generator•Elite Power Simulator: /elite-power-simulatorFollow Us @onsemi。
Protective Devices Miniature Circuit Breakers PL7Catalog1.1Protective DevicesMiniature Circuit Breakers PL7• H igh-quality miniature circuit breakers for commercial and residential applications • Contact position indicator red - green • Guide for secure terminal connection • 3-position DIN rail clip, permits removal from existing busbar system• C omprehensive range of accessories can be mounted subsequently • Rated currents up to 63 A • Tripping characteristics B, C, D• R ated breaking capacity 10 kA according to IEC/EN 60898-1DescriptionSG06511Rated current I n (A)TypeDesignationArticle No.Units perpackageSG064111PL7-B1/21650796/602PL7-B2/21650836/603PL7-B3/21650856/604PL7-B4/21650866/606PL7-B6/22627616/6010PL7-B10/22627626/6013PL7-B13/22627646/6016PL7-B16/22627656/6020PL7-B20/22627666/6025PL7-B25/22627676/6032PL7-B32/22627686/6040PL7-B40/22627696/6050PL7-B50/22633506/6063PL7-B63/22633516/602-poleSG065111PL7-B1/31651124/402PL7-B2/31651164/403PL7-B3/31651184/404PL7-B4/31167094/406PL7-B6/32633864/4010PL7-B10/32633874/4013PL7-B13/32633884/4016PL7-B16/32633894/4020PL7-B20/32633904/4025PL7-B25/32633914/4032PL7-B32/32633924/4040PL7-B40/32633934/4050PL7-B50/32634004/4063PL7-B63/32634014/403-poleRated currentI n (A)TypeDesignationArticle No.Units perpackage10 kA, Characteristic BSG062111PL7-B1/116505212/1202PL7-B2/126483912/1203PL7-B3/116505512/1204PL7-B4/126485012/1206PL7-B6/126267312/12010PL7-B10/126267412/12013PL7-B13/126267512/12016PL7-B16/126267612/12020PL7-B20/126267712/12025PL7-B25/126267812/12032PL7-B32/126267912/12040PL7-B40/126269012/12050PL7-B50/126269112/12063PL7-B63/126269212/1201-poleSG063111PL7-B1/1N1652148/802PL7-B2/1N1652188/803PL7-B3/1N1652208/804PL7-B4/1N1652218/806PL7-B6/1N2627278/8010PL7-B10/1N2627288/8013PL7-B13/1N2627298/8016PL7-B16/1N2627408/8020PL7-B20/1N2627418/8025PL7-B25/1N2627428/8032PL7-B32/1N2627438/801+N-poleRated current I n (A)TypeDesignationArticle No.Units perpackage10 kA, Characteristic CSG062111PL7-C1/126269712/1202PL7-C2/126269912/1203PL7-C3/116506312/1204PL7-C4/126270012/1206PL7-C6/126270112/12010PL7-C10/126270212/12013PL7-C13/126270312/12016PL7-C16/126270412/12020PL7-C20/126270512/12025PL7-C25/126270612/12032PL7-C32/126270712/12040PL7-C40/126270812/12050PL7-C50/126270912/12063PL7-C63/126271012/1201-poleSG063111PL7-C1/1N1652308/802PL7-C2/1N2627448/803PL7-C3/1N1652358/804PL7-C4/1N2627458/806PL7-C6/1N2627468/8010PL7-C10/1N2627478/8013PL7-C13/1N2627488/8016PL7-C16/1N2627498/8020PL7-C20/1N2627508/8025PL7-C25/1N2627518/8032PL7-C32/1N2627528/801+N-poleRated currentI n (A)TypeDesignationArticle No.Units perpackageSG067111PL7-B1/3N1652513/302PL7-B2/3N1652553/303PL7-B3/3N1652573/304PL7-B4/3N1652583/306PL7-B6/3N2639823/3010PL7-B10/3N2639833/3013PL7-B13/3N2639843/3016PL7-B16/3N2639853/3020PL7-B20/3N2639863/3025PL7-B25/3N2639873/3032PL7-B32/3N2639883/3040PL7-B40/3N2639893/3050PL7-B50/3N2639903/3063PL7-B63/3N2639913/303+N-poleSG066111PL7-B1/41651463/302PL7-B2/41651533/303PL7-B3/41651573/304PL7-B4/41651593/306PL7-B6/41651633/3010PL7-B10/41651473/3013PL7-B13/41651493/3016PL7-B16/41651513/3020PL7-B20/41651543/3025PL7-B25/41651553/3032PL7-B32/41651583/3040PL7-B40/41651603/3050PL7-B50/41651623/3063PL7-B63/41651643/304-poleRated current I n (A)TypeDesignationArticle No.Units perpackageSG067111PL7-C1/3N1652673/302PL7-C2/3N1652713/303PL7-C3/3N1652733/304PL7-C4/3N1652743/306PL7-C6/3N2639923/3010PL7-C10/3N2639933/3013PL7-C13/3N2639943/3016PL7-C16/3N2639953/3020PL7-C20/3N2639963/3025PL7-C25/3N2639973/3032PL7-C32/3N2639983/3040PL7-C40/3N2639993/3050PL7-C50/3N2640003/3063PL7-C63/3N2640013/303+N-poleSG066111PL7-C1/41651723/302PL7-C2/41651783/303PL7-C3/41651823/304PL7-C4/41651843/306PL7-C6/41651883/3010PL7-C10/41651733/3013PL7-C13/41651753/3016PL7-C16/41073293/3020PL7-C20/41651793/3025PL7-C25/41651803/3032PL7-C32/41651833/3040PL7-C40/41651853/3050PL7-C50/41651873/3063PL7-C63/41651893/304-poleRated currentI n (A)TypeDesignationArticle No.Units perpackageSG064111PL7-C1/22633536/602PL7-C2/22633546/603PL7-C3/21650986/604PL7-C4/22633556/606PL7-C6/22633566/6010PL7-C10/22633576/6013PL7-C13/22633586/6016PL7-C16/22633596/6020PL7-C20/22633606/6025PL7-C25/22633616/6032PL7-C32/22633626/6040PL7-C40/22633636/6050PL7-C50/22633646/6063PL7-C63/22633656/602-poleSG065111PL7-C1/32634034/402PL7-C2/32634044/403PL7-C3/31651304/404PL7-C4/32634054/406PL7-C6/32634064/4010PL7-C10/32634074/4013PL7-C13/32634084/4016PL7-C16/32634094/4020PL7-C20/32634104/4025PL7-C25/32634114/4032PL7-C32/32634124/4040PL7-C40/32634134/4050PL7-C50/32634144/4063PL7-C63/32634154/403-poleSG064111PL7-D1/21081846/602PL7-D2/22633666/603PL7-D3/21081856/604PL7-D4/22633676/606PL7-D6/22633686/6010PL7-D10/22633696/6013PL7-D13/22633806/6016PL7-D16/22633816/6020PL7-D20/22633826/6025PL7-D25/22633836/6032PL7-D32/22633846/6040PL7-D40/22633856/602-pole Rated current I n (A)TypeDesignationArticle No.Units per package10 kA, Characteristic DSG062111PL7-D1/116507112/1202PL7-D2/126271112/1203PL7-D3/116507412/1204PL7-D4/126271212/1206PL7-D6/126271312/12010PL7-D10/126271412/12013PL7-D13/126271512/12016PL7-D16/126271612/12020PL7-D20/126271712/12025PL7-D25/126271812/12032PL7-D32/126271912/12040PL7-D40/126272012/1201-pole SG063111PL7-D1/1N 1652418/802PL7-D2/1N 2627538/803PL7-D3/1N 1652468/804PL7-D4/1N 2627548/806PL7-D6/1N 2627558/8010PL7-D10/1N 2627568/8013PL7-D13/1N 2627578/8016PL7-D16/1N 2627588/8020PL7-D20/1N 2627598/8025PL7-D25/1N2627608/801+N-pole SG066111PL7-D1/41651943/302PL7-D2/41652013/303PL7-D3/41652053/304PL7-D4/41652073/306PL7-D6/41652103/3010PL7-D10/41651953/3013PL7-D13/41651973/3016PL7-D16/41651993/3020PL7-D20/41652023/3025PL7-D25/41652033/3032PL7-D32/41652063/3040PL7-D40/41652083/304-pole Rated current I n (A)TypeDesignationArticle No.Units perpackageSG065111PL7-D1/31651364/402PL7-D2/32634164/403PL7-D3/31651414/404PL7-D4/32634174/406PL7-D6/32634184/4010PL7-D10/32634194/4013PL7-D13/32634204/4016PL7-D16/32634214/4020PL7-D20/32634224/4025PL7-D25/32634234/4032PL7-D32/32634244/4040PL7-D40/32634254/403-pole SG067111PL7-D1/3N 1652803/302PL7-D2/3N 1652843/303PL7-D3/3N 1652863/304PL7-D4/3N 1652873/306PL7-D6/3N 2640023/3010PL7-D10/3N 2640033/3013PL7-D13/3N 2640043/3016PL7-D16/3N 2640053/3020PL7-D20/3N 2640063/3025PL7-D25/3N 2640073/3032PL7-D32/3N 2640083/3040PL7-D40/3N2640093/303+N-poleSpecifications | Miniature Circuit Breakers PL7Description• High selectivity between MCB and back-up fuse due to low let-throughenergy• Compatible with standard busbar• T win-purpose terminal (lift/open-mouthed) above and below• B usbar positioning optionally above or below• M eets the requirements of insulation co-ordination, distance between con-tacts ³ 4 mm, for secure isolation• S uitable for applications up to 48 V DC (use PL7-DC for higher DC voltages)Accessories:Auxiliary switch for subsequent installation ZP-IHK286052ZP-WHK286053 Tripping signal switch for subsequent installation ZP-NHK248437 Remote control and automatic switching device Z-FW/LP248296Shunt trip release ZP-ASA/..248438, 248439 Undervoltage release Z-USA/..248288-248291 Additional terminal 35 mm2BB-UL-TEPA/35169823 Switching interlock Z-IS/SPE-1TE274418Technical DataPL7ElectricalDesign according toCurrent test marks as printed onto the deviceIEC/EN 60898-1Rated voltage U n AC: 230/400 VDC: 48 V (per pole, max. 2 poles)Rated frequency50/60 HzRated breaking capacity according to IEC/EN 60898-1I cn10 kACharacteristic B, C, DBack-up fuse max. 125 A gLSelectivity class3Rated impulse withstand voltage U imp 4 kV (1.2/50 μs)Enduranceelectrical components³ 10,000 switching operationsmechanical components³ 20,000 switching operationsLine voltage connection at will (above/below)MechanicalFrame size45 mmDevice height80 mmDevice width17.5 mm per pole (1MU)26.3 mm: device 1P+N (1.5MU)Mounting quick fastening with 3 lock-in positions on DIN rail IEC/EN 60715 Degree of protection IP20Upper and lower terminals open-mouthed/lift terminalsTerminal protection finger and hand touch safe, DGUV VS3, EN 50274Terminal capacity1-25 mm2(1p+N, 1,5TE)1-25 mm2 / 1-2x10 mm2 (N)Terminal torque2-2.4 Nm(1p+N, 1,5TE)2-2.4 Nm / 1.2-1.5 Nm (N)Busbar thickness 0.8 - 2 mm (except N 0.5MU)Mounting independent of positionOperation temperature -25°C to +75°CStorage- and transport temperature -40°C up to +75°CConnection diagrams1-pole 1+N-pole (1.5MU) 2-pole3-pole 3+N-poleDimensions (mm)3P3P+N453P17,526,31P3P+N4P80Tripping Characteristics (IEC/EN 60898-1)Tripping characteristic B Tripping characteristic C Tripping characteristic DTRIPPING CURRENTEffect of the Ambient Temperature on Thermal Tripping Behaviour Effect of Power FrequencyEffect of power frequency on the tripping behaviour I MA of the quick releaseLoad Capacity of Series Connected Miniature Circuit BreakersPower frequency f [Hz]162/35060100200300400I MA (f)/I MA (50 Hz) [%]91100101106115134141Adjusted rated current values according to the ambient temperatureNumber of devices (n) 1-poleThe use of the products in networks with other frequencies than 50/60 Hz is in the customer’s responsibility.Let-through Energy PL7Let-through Energy PL7, Characteristic B, 1-poleLet-through Energy PL7, Characteristic C, 1-poleLet-through Energy PL7, Characteristic D, 1-poleProspective short-circuit current [A]L e t t h r o u g h e n e r g y I 2t [A 2 s e c ]Prospective short-circuit current [A]L e t t h r o u g h e n e r g y I 2t [A 2 s e c ]Prospective short-circuit current [A]L e t t h r o u g h e n e r g y I 2t [A 2 s e c ]Short-circuit Selectivity PL7 towards DII-DIV fuse linkIn case of short-circuit, there is selectivity between the miniature circuit breakers PL7 and the upstream fuses up to the specified values of the selectivity limit current I s [kA] (i. e. in case of short-circuit currents I ks under I s only the MCB will trip, in case of short-circuit currents above this value both protective devices will respond).*) basically in accordance with EN 60898-1 D.5.2.bShort-circuit selectivity Characteristic B towards fuse link DII-DIV *)Short-circuit selectivity Characteristic C towards fuse link DII-DIV *)Short-circuit selectivity Characteristic D towards fuse link DII-DIV *)1) Selectivity limit current I sunder 0.5 kA2) S electivity limit current I s = rated breaking capacity I cn of the MCBDarker areas: no selectivity PL7DII-DIV gL/gG I n [A]10162025355063801002<0.51)<0.51)0.8 1.610.02)10.02)10.02)10.02)10.02)4<0.51)<0.51)0.6 1.0 3.610.02)10.02)10.02)10.02)5<0.51)1)2)2)PL7DII-DIV gL/gG I n [A]10162025355063801000.75 1.010.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)1.0<0.51) 1.210.02)10.02)10.02)10.02)10.02)10.02)10.02)1.6<0.51)<0.51) 1.0 2.210.02)10.02)10.02)10.02)10.02)2<0.51)<0.51)0.8 1.610.02)10.02)10.02)10.02)10.02)4<0.51)<0.51)0.60.8 1.8 3.69.710.02)10.02)5<0.51)1)2)2)PL7DII-DIV gL/gG I n [A]10162025355063801001)1)2)2)2)Short-circuit Selectivity PL7 towards D01-D03 fuse linkIn case of short-circuit, there is selectivity between the miniature circuit breakers PL7 and the upstream fuses up to the specified values of the selectivity limit current I s [kA] (i. e. in case of short-circuit currents I ks under I s only the MCB will trip, in case of short-circuit currents above this value both protective devices will respond).*) basically in accordance with EN 60898-1 D.5.2.bShort-circuit selectivity Characteristic B towards fuse link D01-D03*)Short-circuit selectivity Characteristic C towards fuse link D01-D03*)Short-circuit selectivity Characteristic D towards fuse link D01-D03*)1) Selectivity limit current I sunder 0.5 kA2) S electivity limit current I s = rated breaking capacity I cn of the MCBDarker areas: no selectivityPL7DII-DIV gL/gG I n [A]10162025355063801002<0.51)<0.51)0.6 1.010.02)10.02)10.02)10.02)10.02)4<0.51)1)2)2)2)2)PL7DII-DIV gL/gG I n [A]10162025355063801000.75<0.51)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)1.0<0.51)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)1.6<0.51)0.50.60.910.02)10.02)10.02)10.02)10.02)2<0.51)<0.51)0.50.710.02)10.02)10.02)10.02)10.02)4<0.51)1)1)2)2)PL7DII-DIV gL/gG1.16Protective DevicesMiniature Circuit Breakers PL7 - T echnical DataShort-circuit Selectivity PL7 towards NH-00 fuse linkIn case of short-circuit, there is selectivity between the miniature circuit breakers PL7 and the upstream fuses up to the specified values of the selectivity limit current I s [kA] (i. e. in case of short-circuit currents I ks under I s only the MCB will trip, in case of short-circuit currents above this value both protective devices will respond).*) basically in accordance with EN 60898-1 D.5.2.bShort-circuit selectivity Characteristic B towards fuse link NH-00*)Short-circuit selectivity Characteristic C towards fuse link NH-00*)Short-circuit selectivity Characteristic D towards fuse link NH-00*)1) Selectivity limit current I sunder 0.5 kA2) S electivity limit current I s = rated breaking capacity I cn of the MCBDarker areas: no selectivityPL7NH-00 gL/gG I n [A]1620253235405063801001251602<0.51)0.5 1.0 2.510.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)4<0.51)<0.51)0.8 1.3 2.3 4.310.02)10.02)10.02)10.02)10.02)10.02)5<0.51)<0.51)0.7 1.1 1.6 2.2 3.6 4.88.910.02)10.02)10.02)6<0.51)<0.51)0.7 1.1 1.5 2.0 3.3 4.37.610.02)10.02)10.02)8<0.51)1)2)2)2)PL7NH-00 gL/gGI n [A]1620253235405063801001251600.7510.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)1.00.910.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)1.6<0.51)0.6 1.3 4.210.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)2<0.51)0.6 1.0 2.510.02)10.02)10.02)10.02)10.02)10.02)10.02)10.02)4<0.51)<0.51)0.7 1.0 1.5 2.1 3.6 5.010.010.02)10.02)10.02)5<0.51)<0.51)0.60.8 1.2 1.7 2.8 3.88.710.02)10.02)10.02)6<0.51)<0.51)0.50.8 1.2 1.5 2.5 3.3 5.710.02)10.02)10.02)8<0.51)1)2)2)2)PL7NH-00 gL/gG I n [A]1620253235405063801001251604<0.51)<0.51)0.71.0 1.62.23.8 5.210.010.02)10.02)10.02)EatonEMEA Headquarters Route de la Longeraie 71110 Morges, Switzerland © 2022 EatonAll Rights ReservedPublication No. CA019068EN Article number 302783-MK 9010238178571Eaton Industries (Austria) GmbH Scheydgasse 421210 Vienna AustriaFollow us on social media to get the latest product and support information.Eaton is a registered trademark.All other trademarks are property To contact us please visit https:///contacts For technical questions please contact your local Eaton team.Changes to the products, to the information contained in thisdocument, and to prices are reserved; as are errors and omissions.Only order confirmations and technical documentation by Eaton is binding. Photos and pictures also do not warrant a specific layout or functionality. Their use in whatever form is subject to prior approval by Eaton. The same applies to trademarks (especially Eaton, Moeller,and Cutler-Hammer). The Terms and Conditions of Eaton apply, as referenced on Eaton Internet pages and Eaton order confirmations.Eaton is an intelligent power management company dedicated toimproving the quality of life and protecting the environment for people everywhere. We are guided by our commitment to do business right, to operate sustainably and to help our customers manage power - today and well into the future. By capitalizing on the global growth trends of electrification and digitalization, we’re accelerating the planet’s transition to renewable energy, helping to solve the world’s most urgent power management challenges, and doing what’s best for our stakeholders and all of society.For more information, visit .。
ASPICE软件数据模型设计文档英文版Document Title: ASPICE Software Data Model Design DocumentIn this document, we will outline the design of the ASPICE software data model. The ASPICE (Automotive SPICE) framework is a standard for the software development process in the automotive industry.IntroductionThe ASPICE software data model is a crucial component in ensuring the quality and efficiency of software development in the automotive sector. It provides a structured approach to managing software requirements, design, implementation, and testing.GoalsThe primary goal of the ASPICE software data model design is to establish a standardized framework for organizing and managing software-related data in compliance with ASPICE guidelines. This willfacilitate better communication, collaboration, and decision-making among software development teams.Key Components1. Software Requirements: This section will detail the functional and non-functional requirements of the software, including user needs, system capabilities, and performance metrics.2. Software Design: Here, we will outline the architectural design of the software, including modules, interfaces, and data structures.3. Software Implementation: This section will describe the coding and testing of the software, ensuring that it meets the specified requirements.4. Software Testing: We will detail the testing procedures and results to ensure the software functions as intended.5. Software Maintenance: This component will address how software updates, bug fixes, and enhancements will be managed over the software's lifecycle.ConclusionIn conclusion, the ASPICE software data model design document plays a critical role in ensuring the quality and reliability of software development in the automotive industry. By following the guidelines outlined in this document, software development teams can streamline their processes and deliver high-quality products to market.。
MC100EPT233.3 V Dual Differential LVPECL/LVDS/CML to LVTTL/LVCMOS TranslatorDescriptionThe MC100EPT23 is a dual differential LVPECL/LVDS/CML to LVTTL/LVCMOS translator. Because LVPECL (Positive ECL), LVDS, and positive CML input levels and LVTTL/LVCMOS output levels are used, only + 3.3 V and ground are required. The small outline 8-lead SOIC package and the dual gate design of the EPT23 makes it ideal for applications which require the translation of a clock or data signal.The EPT23 is available in only the ECL 100K standard. Since there are no LVPECL outputs or an external V BB reference, the EPT23 does not require both ECL standard versions. The LVPECL/LVDS inputs are differential. Therefore, the MC100EPT23 can accept any standard differential LVPECL/LVDS input referenced from a V CC of + 3.3 V. Features•1.5 ns Typical Propagation Delay•Maximum Operating Frequency > 275MHz•LVPECL/LVDS/CML Inputs, LVTTL/LVCMOS Outputs•24 mA LVTTL Outputs•Operating Range:♦V CC =3.0V to 3.6V with GND = 0V•These Devices are Pb-Free, Halogen Free and are RoHS CompliantA= Assembly LocationL= Wafer LotY= YearW= Work WeekM= Date CodeG= Pb-Free PackageKA23ALYW GG183TMGG14 (Note: Microdot may be in either location)†For information on tape and reel specifications, in-cluding part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, .ORDERING INFORMATIONDevice Package Shipping†MC100EPT23DG SOIC−8NB(Pb-Free)98 Units/TubeMC100EPT23DR2G SOIC−8NB(Pb-Free)2500/T ape & ReelTSSOP−8(Pb-Free)MC100EPT23DTR2G2500/T ape & ReelTSSOP−8(Pb-Free)MC100EPT23DTG100 Units/TubeDFN−8(Pb-Free)MC100EPT23MNR4G1000/T ape & Reel *For additional marking information, refer toApplication Note AND8002/D.MARKING DIAGRAMS*SOIC−8NBD SUFFIXCASE751−07TSSOP−8DT SUFFIXCASE948R−028DFN−8MN SUFFIXCASE 506AAQ0GNDV CCFigure 1. Logic Diagram and 8-Lead PinoutD0Q1D1D1D0(Top View)Table 1. PIN DESCRIPTIONPin FunctionQ0, Q1LVTTL/LVCMOS OutputsD0**, D1**D0**, D1**Differential LVPECL/LVDS/CML Inputs V CC Positive Supply GND GroundEP(DFN −8 only) Thermal exposed pad must be connected to a sufficient thermal conduit.Electrically connect to the most negative supply (GND) or leave unconnected, floating open.** Pins will default to V CC /2 when left open.Table 2. ATTRIBUTESCharacteristicsValue Internal Input Pulldown Resistor 50k W Internal Input Pullup Resistor 50k W ESD ProtectionHuman Body Model Machine ModelCharged Device Model> 1500 V > 100V > 2kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1)Pb-Free Pkg SOIC −8NB TSSOP −8DFN −8Level 1Level 3Level 1Flammability RatingOxygen Index: 28 to 34UL 94V −*******inTransistor Count91 DevicesMeets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1.For additional information, see Application Note AND8003/D .Table 3. MAXIMUM RATINGSSymbol ParameterCondition 1Condition 2Rating Unit V CC Power Supply GND = 0V 3.8V V I Input Voltage GND = 0V V I ≤ V CC3.8V I out Output CurrentContinuous Surge50100mA T A Operating Temperature Range −40 to +85°C T stg Storage Temperature Range−65 to +150°C q JA Thermal Resistance (Junction-to-Ambient)0lfpm 500lfpm SOIC −8NB 190130°C/W q JC Thermal Resistance (Junction-to-Case)Standard Board SOIC −8NB 41 to 44°C/W q JA Thermal Resistance (Junction-to-Ambient)0lfpm 500lfpm TSSOP −8185140°C/W q JC Thermal Resistance (Junction-to-Case)Standard Board TSSOP −841 to 44°C/W q JAThermal Resistance (Junction-to-Ambient)0lfpm 500lfpmDFN −812984°C/WTable 3. MAXIMUM RATINGSCondition 1Condition 2ParameterRatingSymbol Unit T sol Wave Solder (Pb-Free)<2 to 3 sec @ 260°C265°C q JC Thermal Resistance (Junction-to-Case)(Note 1)DFN−835 to 40°C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.JEDEC standard multilayer board − 2S2P (2 signal, 2 power)Table 4. PECL DC CHARACTERISTICS(V CC = 3.3V, GND = 0V (Note 1))Symbol Characteristic−40°C25°C85°CUnit Min Typ Max Min Typ Max Min Typ MaxI CCH Power Supply Current (Outputs set to HIGH)102035102035102035mA I CCL Power Supply Current (Outputs set to LOW)152740152740152740mA V IH Input HIGH Voltage207524202075242020752420mV V IL Input LOW Voltage135516751355167513551675mV V IHCMR Input HIGH Voltage Common Mode Range(Note 2)1.2 3.3 1.2 3.3 1.2 3.3VI IH Input HIGH Current150150150m AI IL Input LOW CurrentDD −150−150−150−150−150−1500.5m ANOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.1.All values vary 1:1 with V CC.2.V IHCMR min varies 1:1 with V EE, V IHCMR max varies 1:1 with V CC. The V IHCMR range is referenced to the most positive side of the differentialinput signal.Table 5. LVTTL/LVCMOS OUTPUT DC CHARACTERISTICS(V CC= 3.3V, GND = 0.0V, T A= −40°C to 85°C)Symbol Characteristic Condition Min Typ Max Unit V OH Output HIGH Voltage I OH = −3.0mA 2.4V V OL Output LOW Voltage I OL = 24mA0.5VI OS Output Short Circuit Current−180−50mA NOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.Table 6. AC CHARACTERISTICS(V CC= 3.0V to 3.6V, GND = 0.0V(Note 1))Symbol Characteristic−40°C25°C85°CUnit Min Typ Max Min Typ Max Min Typ Maxf max Maximum Frequency (Figure 2)275350275350275350MHzt PLH, t PHL Propagation Delay toOutput Differential (Note 2)1.1 1.5 1.8 1.1 1.5 1.8 1.1 1.5 1.8nst SK++ t SK−−t SKPP Output-to-Output Skew++Output-to-Output Skew−−Part-to-Part Skew (Note 3)15357060805001540707080500304014012580500pst JITTER Random Clock Jitter (RMS) (Figure 2)510510510ps V PP Input Voltage Swing (Differential Configuration)150800120015080012001508001200mV t r t f Output Rise/Fall Times (0.8 V − 2.0 V)Q, Q330600900330600900330650900psNOTE:Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500lfpm. Electrical parameters are guaranteed only over the declaredoperating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously.1.Measured with a 750 mV 50% duty-cycle clock source. R L = 500 W to GND and C L = 20 pF to GND. Refer to Figure 3.2.Reference (V CC =3.3V ± 5%; GND = 0 V)3.Skews are measured between outputs under identical conditions.Figure 2. Typical V OH / Jitter Versus Frequency (255C)FREQUENCY (MHz)V O H (V )0.01.02.03.0R A N D O M C L O C K J I T T E R (p s R M S )1284Figure 3. TTL Output Loading Used for Device EvaluationGNDResource Reference of Application NotesAN1405/D −ECL Clock Distribution Techniques AN1406/D −Designing with PECL (ECL at +5.0 V)AN1503/D −ECLinPS t I/O SPiCE Modeling Kit AN1504/D −Metastability and the ECLinPS Family AN1568/D −Interfacing Between LVDS and ECL AN1672/D −The ECL Translator Guide AND8001/D −Odd Number Counters Design AND8002/D −Marking and Date Codes AND8020/D −Termination of ECL Logic Devices AND8066/D −Interfacing with ECLinPSAND8090/D−AC Characteristics of ECL DevicesECLinPS is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.DFN8 2x2, 0.5P CASE 506AA ISSUE FDATE 04 MAY 2016SCALE 4:1*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DIMENSIONS: MILLIMETERSGENERICMARKING DIAGRAM*RECOMMENDEDXX = Specific Device Code M = Date Code G = Pb −Free DeviceNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSION b APPLIES TO PLATEDTERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP .4.COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.2XDIM MIN MAX MILLIMETERS A 0.80 1.00A10.000.05A30.20 REF b 0.200.30D 2.00 BSC D2 1.10 1.30E 2.00 BSC E20.700.90e 0.50 BSC K L 0.250.35L1DETAIL ALOPTIONAL CONSTRUCTIONSL1−−−0.100.30 REF DETAIL BALTERNATE CONSTRUCTIONS*This information is generic. Please refer todevice data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products may not follow the Generic Marking.SOIC −8 NB CASE 751−07ISSUE AKDATE 16 FEB 2011NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 (0.006)PER SIDE.5.DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.6.751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07.SCALE 1:1STYLES ON PAGE 2DIM A MIN MAX MIN MAX INCHES4.805.000.1890.197MILLIMETERSB 3.80 4.000.1500.157C 1.35 1.750.0530.069D 0.330.510.0130.020G 1.27 BSC 0.050 BSC H 0.100.250.0040.010J 0.190.250.0070.010K 0.40 1.270.0160.050M 0 8 0 8 N 0.250.500.0100.020S5.806.200.2280.244MYM0.25 (0.010)YM0.25 (0.010)Z SXS____XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = YearW = Work WeekG = Pb −Free PackageGENERICMARKING DIAGRAM*8ICDiscrete 0.60.024ǒmm inchesǓSCALE 6:1*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*Discrete(Pb −Free)IC (Pb −Free)XXXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb −Free Package*This information is generic. Please refer todevice data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products may not follow the Generic Marking.SOIC −8 NB CASE 751−07ISSUE AKDATE 16 FEB 2011STYLE 4:PIN 1.ANODE2.ANODE3.ANODE4.ANODE5.ANODE6.ANODE7.ANODEMON CATHODE STYLE 1:PIN 1.EMITTER2.COLLECTOR3.COLLECTOR4.EMITTER5.EMITTER6.BASE7.BASE8.EMITTER STYLE 2:PIN 1.COLLECTOR, DIE, #12.COLLECTOR, #13.COLLECTOR, #24.COLLECTOR, #25.BASE, #26.EMITTER, #27.BASE, #18.EMITTER, #1STYLE 3:PIN 1.DRAIN, DIE #12.DRAIN, #13.DRAIN, #24.DRAIN, #25.GATE, #26.SOURCE, #27.GATE, #18.SOURCE, #1STYLE 6:PIN 1.SOURCE2.DRAIN3.DRAIN4.SOURCE5.SOURCE6.GATE7.GATE8.SOURCE STYLE 5:PIN 1.DRAIN2.DRAIN3.DRAIN4.DRAIN5.GATE6.GATE7.SOURCE8.SOURCESTYLE 7:PIN 1.INPUT2.EXTERNAL BYPASS3.THIRD STAGE SOURCE4.GROUND5.DRAIN6.GATE 37.SECOND STAGE Vd 8.FIRST STAGE Vd STYLE 8:PIN 1.COLLECTOR, DIE #12.BASE, #13.BASE, #24.COLLECTOR, #25.COLLECTOR, #26.EMITTER, #27.EMITTER, #18.COLLECTOR, #1STYLE 9:PIN 1.EMITTER, COMMON2.COLLECTOR, DIE #13.COLLECTOR, DIE #24.EMITTER, COMMON5.EMITTER, COMMON6.BASE, DIE #27.BASE, DIE #18.EMITTER, COMMON STYLE 10:PIN 1.GROUND2.BIAS 13.OUTPUT4.GROUND5.GROUND6.BIAS 27.INPUT8.GROUND STYLE 11:PIN 1.SOURCE 12.GATE 13.SOURCE 24.GATE 25.DRAIN 26.DRAIN 27.DRAIN 18.DRAIN 1STYLE 12:PIN 1.SOURCE2.SOURCE3.SOURCE4.GATE5.DRAIN6.DRAIN7.DRAIN8.DRAINSTYLE 14:PIN 1.N −SOURCE2.N −GATE3.P −SOURCE4.P −GATE5.P −DRAIN6.P −DRAIN7.N −DRAIN8.N −DRAIN STYLE 13:PIN 1.N.C.2.SOURCE3.SOURCE4.GATE5.DRAIN6.DRAIN7.DRAIN8.DRAIN STYLE 15:PIN 1.ANODE 12.ANODE 13.ANODE 14.ANODE 15.CATHODE, COMMON6.CATHODE, COMMON7.CATHODE, COMMON8.CATHODE, COMMON STYLE 16:PIN 1.EMITTER, DIE #12.BASE, DIE #13.EMITTER, DIE #24.BASE, DIE #25.COLLECTOR, DIE #26.COLLECTOR, DIE #27.COLLECTOR, DIE #18.COLLECTOR, DIE #1STYLE 17:PIN 1.VCC2.V2OUT3.V1OUT4.TXE5.RXE6.VEE7.GND8.ACCSTYLE 18:PIN 1.ANODE2.ANODE3.SOURCE4.GATE5.DRAIN6.DRAIN7.CATHODE8.CATHODESTYLE 19:PIN 1.SOURCE 12.GATE 13.SOURCE 24.GATE 25.DRAIN 26.MIRROR 27.DRAIN 18.MIRROR 1STYLE 20:PIN 1.SOURCE (N)2.GATE (N)3.SOURCE (P)4.GATE (P)5.DRAIN6.DRAIN7.DRAIN8.DRAIN STYLE 21:PIN 1.CATHODE 12.CATHODE 23.CATHODE 34.CATHODE 45.CATHODE 5MON ANODEMON ANODE8.CATHODE 6STYLE 22:PIN 1.I/O LINE 1MON CATHODE/VCCMON CATHODE/VCC4.I/O LINE 3MON ANODE/GND6.I/O LINE 47.I/O LINE 5MON ANODE/GND STYLE 23:PIN 1.LINE 1 INMON ANODE/GNDMON ANODE/GND4.LINE 2 IN5.LINE 2 OUTMON ANODE/GNDMON ANODE/GND8.LINE 1 OUT STYLE 24:PIN 1.BASE2.EMITTER3.COLLECTOR/ANODE4.COLLECTOR/ANODE5.CATHODE6.CATHODE7.COLLECTOR/ANODE 8.COLLECTOR/ANODE STYLE 25:PIN 1.VIN2.N/C3.REXT4.GND5.IOUT6.IOUT7.IOUT8.IOUTSTYLE 26:PIN 1.GND2.dv/dt3.ENABLE4.ILIMIT5.SOURCE6.SOURCE7.SOURCE8.VCCSTYLE 27:PIN 1.ILIMIT2.OVLO3.UVLO4.INPUT+5.SOURCE6.SOURCE7.SOURCE8.DRAINSTYLE 28:PIN 1.SW_TO_GND2.DASIC_OFF3.DASIC_SW_DET4.GND5.V_MON6.VBULK7.VBULK8.VINSTYLE 29:PIN 1.BASE, DIE #12.EMITTER, #13.BASE, #24.EMITTER, #25.COLLECTOR, #26.COLLECTOR, #27.COLLECTOR, #18.COLLECTOR, #1STYLE 30:PIN 1.DRAIN 12.DRAIN 13.GATE 24.SOURCE 25.SOURCE 1/DRAIN 26.SOURCE 1/DRAIN 27.SOURCE 1/DRAIN 28.GATE 1CASE 948R −02ISSUE ADATE 04/07/2000TSSOP 8DIM MIN MAX MIN MAX INCHESMILLIMETERS A 2.90 3.100.1140.122B 2.90 3.100.1140.122C0.80 1.100.0310.043D 0.050.150.0020.006F 0.400.700.0160.028G 0.65 BSC 0.026 BSC L 4.90 BSC 0.193 BSC M0 6 0 6 NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A DOES NOT INCLUDE MOLD FLASH.PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15(0.006) PER SIDE.4.DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010)PER SIDE.5.TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.6.DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-.____DETAIL ESCALE 2:1K 0.250.400.0100.016MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTLITERATURE FULFILLMENT:。
同步整流BUCK型DC-DC模块TPS54310的平均SPICE模型的建立与应用Build and Application of the Averaged SPICE Model of the Synchronous Buck Module TPS54310香港科汇（亚太）有限公司成都代表处何亚宁摘要：在Dr. Sam Ben-Yaakov开关电感模型概念的基础上，根据DC-DC模块TPS54310的实际工作原理，建立适用于SPICE软件的等效电路模型，从而可以方便地对TPS54310进行直流分析、小信号分析以及闭环大信号瞬态分析。
模型的准确性在所建模型的SPICE仿真结果与TI公司提供的专用设计软件SWIFT™ Designer 2.01的设计结果的对比中得到证实。
关键词：同步整流；开关电感模型；平均SPICE模型；仿真；直流分析；小信号分析；闭环大信号瞬态分析Abstract Base on the Switched Inductor Model (SIM) concept of Dr. Sam Ben-Yaakov. A averaged SPICE model of the TPS54310 is built using equivalent circuit method.So the DC analysis,small signal analysis and large signal closed loop transient analysis of the TPS54310 can easily be D ON e.The validity of the model is verified by comparision between the results of design with the original design program SWIFT™ Designer 2.01 and the results of SPICE simulation using the model built in this paper.Key words synchronous rectifier; Switched Inductor Model; averaged SPICE model; simulation; DC analysis; small signal analysis; large signal closed loop transient analysis1 引言自从1978年，R.Keller 首次运用R.D.Middlebrook的理论进行开关电源的SPICE仿真，近30年来，在开关电源的平均SPICE模型的建模方面，许多学者都建立了自己的模型理论，从而形成了各种SPICE模型。
ASPICE软件测试策略设计文档英文版ASPICE Software Testing Strategy Design DocumentIntroductionThis document outlines the software testing strategy designed for ASPICE (Automotive SPICE) compliance. The goal is to ensure the quality and reliability of the software through systematic testing processes.Testing ScopeThe testing scope includes functionality testing, performance testing, security testing, and compatibility testing. Each aspect will be thoroughly evaluated to meet ASPICE requirements.Testing ApproachThe testing approach will follow a structured methodology, including test planning, test case design, test execution, and testreporting. Regular reviews and feedback sessions will be conducted to ensure the effectiveness of the testing process.Test EnvironmentA dedicated test environment will be set up to simulate real-world scenarios and test the software under different conditions. This environment will be closely monitored to identify any issues or discrepancies.Test ToolsVarious testing tools will be utilized to automate the testing process and streamline test execution. These tools will help in identifying defects and tracking the progress of testing activities.Test ScheduleA detailed test schedule will be developed to allocate time for different testing phases and ensure timely completion of testing activities. Regular updates will be provided to stakeholders to keep them informed of the progress.Test MetricsKey performance indicators will be defined to measure the effectiveness of the testing process. These metrics will help in identifying areas for improvement and ensuring the quality of the software.Test ReportingComprehensive test reports will be generated to document the test results, defects found, and overall test coverage. These reports will be shared with the project team and stakeholders for review and decision-making.ConclusionBy following this software testing strategy, we aim to achieve ASPICE compliance and deliver high-quality software that meets the expectations of our stakeholders. Continuous improvement and adherence to best practices will be the key focus areas throughout the testing process.。
User’s Guide ROHM Solution SimulatorAutomotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifiers (Op-Amps) TLR377YG-C – Voltage Follower– DC Sweep simulationThis circuit simulates DC sweep response with Op-Amp as a voltage follower. You can observe the output voltage when the input voltage is changed. You can customize the parameters of the components shown in blue, such as VSOURCE, or peripheral components, and simulate the voltage follower with the desired operating condition.You can simulate the circuit in the published application note: Operational amplifier, Comparator (Tutorial). [JP] [EN] [CN] [KR] General CautionsCaution 1: The values from the simulation results are not guaranteed. Please use these results as a guide for your design.Caution 2: These model characteristics are specifically at Ta=25°C. Thus, the simulation result with temperature variances may significantly differ from the result with the one done at actual application board (actual measurement).Caution 3: Please refer to the Application note of Op-Amps for details of the technical information.Caution 4: The characteristics may change depending on the actual board design and ROHM strongly recommend to double check those characteristics with actual board where the chips will be mounted on.1 Simulation SchematicFigure 1. Simulation Schematic2 How to simulateThe simulation settings, such as parameter sweep or convergence options,are configurable from the ‘Simulation Settings’ shown in Figure 2, and Table1 shows the default setup of the simulation.In case of simulation convergence issue, you can change advancedoptions to solve. The temperature is set to 27 °C in the default statement in‘Manual Options’. You can modify it.Figure 2. Simulation Settings and execution Table 1.Simulation settings default setupParameters Default NoteSimulation Type DC Do not change Simulation TypeParameter Sweep VSOURCE VOLTAGE_LEVEL from 0 V to 5 V by 0.1 VAdvanced options Balanced - Convergence Assist -Manual Options .temp 27 - SimulationSettingsSimulate3 Simulation Conditions4 Op-Amp modelTable 3 shows the model pin function implemented. Note that the Op-Amp model is the behavior model for its input/output characteristics, and no protection circuits or the functions not related to the purpose are not implemented.5 Peripheral Components5.1 Bill of MaterialTable 4 shows the list of components used in the simulation schematic. Each of the capacitors has the parameters of equivalent circuit shown below. The default values of equivalent components are set to zero except for the ESR ofC. You can modify the values of each component.Table 4. List of capacitors used in the simulation circuitType Instance Name Default Value Variable RangeUnits Min MaxResistor R1_1 0 0 10 kΩRL1 10k 1k 1M, NC ΩCapacitor C1_1 0.1 0.1 22 pF CL1 10 free, NC pF5.2 Capacitor Equivalent Circuits(a) Property editor (b) Equivalent circuitFigure 3. Capacitor property editor and equivalent circuitThe default value of ESR is 0.01 Ω.(Note 2) These parameters can take any positive value or zero in simulation but it does not guarantee the operation of the IC in any condition. Refer to the datasheet to determine adequate value of parameters.6 Recommended Products6.1 Op-AmpTLR377YG-C : Automotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifier. [JP] [EN] [CN] [KR] [TW] [DE]TLR2377YFVM-C : Automotive High Precision & Input/Output Rail-to-Rail CMOS Operational Amplifier (DualOp-Amp). [JP] [EN] [CN] [KR] [TW] [DE]LMR1802G-LB : Low Noise, Low Input Offset Voltage CMOS Operational Amplifier. [JP] [EN] [CN] [KR] [TW] [DE] Technical Articles and Tools can be found in the Design Resources on the product web page.NoticeROHM Customer Support System/contact/Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.N o t e sThe information contained herein is subject to change without notice.Before you use our Products, please contact our sales representative and verify the latest specifica-tions :Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.The Products specified in this document are not designed to be radiation tolerant.For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.ROHM has used reasonable care to ensur e the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.W hen providing our Products and technologies contained in this document to other countries,you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.1) 2)3)4)5)6)7)8)9)10)11)12)13)。
初三测试题制作简易电路板英语作文In today's technological era, understanding the basics of circuits is essential. As part of a test for ninth graders, a task involving the creation of a simple circuit board was given. This exercise aimed to test the students' knowledge ofelectrical circuits and their ability to practically apply this knowledge.The task began with a basic introduction to circuits. Students were taught about the components required for a circuit to function, such as resistors, capacitors, and LEDs. They were also educated on the importance of a power source, such as a battery, in providing the necessary electrical energy for the circuit to operate.Following the theoretical explanation, the students were provided with a practical demonstration of circuit construction. They were shown how to connect the components in the correct sequence to ensure the smooth flow of electricity. This handson experience allowed the students to understand the significance of proper wiring and component placement in a circuit.After the demonstration, the students were given the task of creating their own simple circuit boards. Armed with the knowledge they had acquired, the students set out to design and assemble their circuits. Some students chose to create circuitswith basic functions, such as lighting up an LED, while others attempted more complex designs involving multiple components.As the students worked on their projects, the classroom buzzed with excitement and concentration. The sound of wires being connected and components being tested filled the air asthe students meticulously put their circuits together. It was a sight to behold, seeing the young minds fully engaged in the practical application of their learning.Once the circuits were completed, the students eagerly awaited the moment of truth – testing their creations. With bated breath, they connected the power source to their circuits and watched in anticipation as the LEDs lit up, signaling the successful completion of their tasks. The sense of accomplishment and pride on their faces was palpable as they realized that they had successfully created functioning circuits.In conclusion, the task of making a simple circuit board was not just a test of knowledge, but a practical application of learning. It allowed the students to see the realworld implications of their theoretical understanding and showcased their ability to apply that knowledge effectively. This exercise served as a reminder of the importance of handson learning in reinforcing concepts and fostering a deeper understanding of complex subjects.。
