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1100 2.5-Inch and M.2 SATA NAND Flash SSDMTFDDAK256TBN, MTFDDAK512TBN, MTFDDAK1T0TBN,MTFDDAK2T0TBN, MTFDDAV256TBN, MTFDDAV512TBN,MTFDDAV1T0TBNFeatures•Micron® 3D TLC NAND Flash•RoHS-compliant package•SATA 6 Gb/s interface•TCG/Opal 2.0-compliant self-encrypting drive (SED)•Compatible with Microsoft eDrive®•Hardware-based AES-256 encryption engine •ATA modes supported–PIO mode 3, 4–Multiword DMA mode 0, 1, 2–Ultra DMA mode 0, 1, 2, 3, 4, 5, 6•Industry-standard, 512-byte sector size support •Hot-plug/hot-remove capable (2.5")•Device sleep (DEVSLP), extreme low-power mode •Native command queuing support with 32-com-mand slot support•ATA-8 ACS3 command set compliant•ATA security feature command set and password login support•Secure erase (data page) command set: fast and se-cure erase•Sanitize device feature set support•Self-monitoring, analysis, and reporting technology (SMART) command set•Dynamic write acceleration•Adaptive thermal monitoring•Power loss protection for data-at-rest •Performance1, 2–PCMark® Vantage (HDD test suite score): Up to 84,000–Sequential 128KB READ: Up to 530 MB/s–Sequential 128KB WRITE: Up to 500 MB/s–Random 4KB READ: Up to 55,000 IOPS–Random 4KB WRITE: Up to 83,000 IOPS–READ/WRITE latency: 85µs/40µs (TYP)•Reliability–MTTF: 1.5 million device hours3–Static and dynamic wear leveling–Uncorrectable bit error rate (UBER): <1 sector per 1015 bits read•Low power consumption–Device Sleep numbers: <4mW–DIPM numbers: 110mW TYP4•Endurance: Total bytes written (TBW)–120TB•Capacity (unformatted): 128GB•2.5-inch × 7mm form factor•Secure firmware update with digitally signed firm-ware image•Operating temperature–Commercial (0°C to +70°C)5Notes: 1.Typical I/O performance numbers as meas-ured fresh-out-of-the-box (FOB) using Iome-ter with a queue depth of 32 and writecache enabled.2. 4 KB transfers used for READ/WRITE latencyvalues.3.The product achieves a mean time to failure(MTTF) based on population statistics notrelevant to individual units.4.Active average power measured during exe-cution of MobileMark® with DIPM (device-initiated power management) enabled.5.Temperature measured by SMART attribute194.Warranty: Contact your Micron sales representative for further information regarding the product, including product warranties.Part Numbering Informations 1100 SSD is available in different configurations and densities. The chart below is a comprehensive list of options for the 1100 series devices; not all options listed can be combined to define an offered product. Visit for a list of valid part numbers.Figure 1: Part Number ChartMT FD D AK256T BN -1AR1ESMicron Technology Product FamilyFD = Flash driveDrive InterfaceD = SATA 6.0 Gb/sDrive Form FactorAK = 2.5-inch (7mm)AV = M.2 (80mm x 22mm) Drive Density256 = 256GB512 = 512GB1T0 = 1024GB2T0 = 2048GBNAND Flash TypeT = TLCProduct FamilyBN = 1100Production StatusBlank = ProductionES = Engineering sampleCustomer DesignatorYY = StandardFeature SetAB = StandardTA = TAA CompliantZZ = BlankExtended Firmware FeaturesZ = Non-Encrypted2 = SED (self-encrypting drive)Sector Size1 = 512 byteNAND Flash ComponentAR = 384Gb, TLC, x16, 1.8V (3D)BOM RevisionFor example:1 = 1st generation2 = 2nd generation2AB YYGeneral Descriptionsolid state drive (SSD) uses a single-chip controller with a SATA interface on the systemside and up to four channels of NAND Flash internally. Available in both M.2 and 2.5-inch form factors, the SSD integrates easily in existing storage infra-structures.The SSD is designed to use the SATA interface efficiently during both READs andWRITEs while delivering bandwidth-focused performance. SSD technology enables en-hanced boot times, faster application load times, reduced power consumption and ex-tended reliability.The self-encrypting drive (SED) features a FIPS-compliant, AES-256 encryption engine,providing hardware-based, secure data encryption, with no loss of SSD performance.This SED follows the TCG/Opal specification for trusted peripherals.When TCG/Opal features are not enabled, the device can perform alternate data en-cryption by invoking the ATA security command set encryption features, to providefull-disk encryption (FDE) managed in the host system BIOS. TCG/Opal and ATAsecurity feature sets cannot be enabled simultaneously.The data encryption is always running; however, encryption keys are not managed andthe data is not secure until either TCG/Opal or ATA security feature sets are enabled.Figure 2: Functional Block DiagramPerformanceMeasured performance can vary for a number of reasons. The major factors affectingdrive performance are the capacity of the drive and the interface of the host. Addition-ally, overall system performance can affect the measured drive performance. Whencomparing drives, it is recommended that all system variables are the same, and onlythe drive being tested varies.Performance numbers will vary depending on the host system configuration.For SSDs designed for the client computing market, Micron specifies performance infresh-out-of-box (FOB) state. Data throughput measured in steady state may be lowerthan FOB state, depending on the nature of the data workload.For a description of these performance states and of Micron's best practices for per-formance measurement, refer to Micron's technical marketing brief, Best Practices forSSD Performance Measurement.Table 1: Drive PerformanceNotes: 1.Performance numbers are maximum values, except as noted.2.Typical I/O performance numbers as measured using Iometer with a queue depth of 32and write cache enabled. Fresh-out-of-box (FOB) state is assumed. For performancemeasurement purposes, the SSD may be restored to FOB state using the SECURE ERASEcommand.3.Iometer measurements are performed on an 20GB span of logical block addresses(LBAs).4.4KB transfers with a queue depth of 1 are used to measure READ/WRITE latency valueswith write cache enabled.5.System variations will affect measured results. For comparison, PCMark scores are meas-ured with the SSD as a secondary drive in a two-drive system. When measured as an OSdrive, system overhead can cause lower scores.Logical Block Address ConfigurationThe drive is set to report the number of logical block addresses (LBA) that will ensuresufficient storage space for the specified capacity. Standard LBA settings, based on theIDEMA standard (LBA1-03), are shown below.Table 2: Standard LBA SettingsReliabilitySSDs incorporate advanced technology for defect and error management.They usevarious combinations of hardware-based error correction algorithms and firmware-based static and dynamic wear-leveling algorithms.Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is de-fined as data that is reported as successfully programmed to the SSD but when it is readout of the SSD, the data differs from what was programmed.Table 3: Uncorrectable Bit Error RateMean Time To FailureMean time to failure (MTTF) for the SSD can be predicted based on the component reli-ability data using the methods referenced in the Telcordia SR-332 reliability predictionprocedures for electronic equipment.Table 4: MTTFNote: 1.The product achieves a mean time to failure (MTTF) of 1.5 million hours, based on popu-lation statistics not relevant to individual units.EnduranceEndurance for the SSD can be predicted based on the usage conditions applied to thedevice, the internal NAND component cycles, the write amplification factor, and thewear-leveling efficiency of the drive. The table below shows the drive lifetime for eachSSD capacity by client computing and sequential input and based on predefined usageconditions.Table 5: Drive Lifetime – Client ComputingNotes: 1.Total bytes written validated with the drive 90% full.2.SSD volatile write cache is enabled.3.Access patterns used during reliability testing are 25% sequential and 75% random andconsist of the following: 1% are 512B; 44% are 4 KiB; 35% are 64 KiB; and 20% are 128KiB.4.Host workload parameters, including write cache settings, I/O alignment, transfer sizes,randomness, and percent full, that are substantially different than the described notesmay result in varied endurance results.5.GB/day can be calculated by dividing the total bytes written value by the number ofdays in the interval of interest (365 days × number of years). For example: 100 TB/3years/365 days = 91 GB/day for 3 years.Electrical CharacteristicsEnvironmental conditions beyond those listed may cause permanent damage to the de-vice. This is a stress rating only, and functional operation of the device at these or anyother conditions above those indicated in the operational sections of this specificationis not implied. Exposure to absolute maximum rating conditions for extended periodsmay affect reliability.Table 6: SATA Power ConsumptionNotes: 1.Data taken at 25°C using a 6 Gb/s SATA interface.2.Active average power measured while running MobileMark productivity suite.3.Device-initiated power management (DIPM) enabled. DIPM slumber and DEVSLP ena-bled.4.Active maximum power is an average power measurement performed using Iometerwith 128KB sequential write transfers.Table 7: Maximum RatingsNote: 1.Operating temperature is best measured by reading the SSD's on-board temperaturesensor, which is recorded in SMART attribute 194 (0xC2).Table 8: Shock and VibrationDynamic Write AccelerationDynamic write acceleration optimizes SSD performance for typical client-computingenvironments, where WRITE operations tend to occur in bursts of commands with idletime between these bursts.Capacity for accelerated performance is derived from the adaptive usage of the SSD'snative NAND array, without sacrificing user-addressable storage. Recent advances inMicron NAND technology enable the SSD firmware to achieve acceleration through on-the-fly mode switching between SLC and TLC modes to create a high-speed SLC poolthat changes in size and location with usage conditions.During periods of idle time between write bursts, the drive may free additional capacityfor accelerated write performance. The amount of accelerated capacity recovered dur-ing idle time depends on the portion of logical addresses that contain user data andother runtime parameters. In applications that do not provide sufficient idle time, thedevice may need to perform SLC-to-TLC data migration during host activity.Under accelerated operation, write performance may be significantly higher than non-accelerated operations. Power consumption per-byte written is lower during acceler-ated operation, which may reduce overall power consumption and heat production.。

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TM512_V1.0

TM512_V1.0

TM512是512差分并联协议LED驱动芯片，可选择1/2/3/4通道高精度恒流输出，并带解码转发功能，可通过DO口转换成单线归零码信号，直接控制我公司TM18系列IC，可转发192个通道数据。

TM512 解码技术精准解码DMX512信号，可兼容并拓展512协议信号，TM512对传输频率在200K～500K以内的DMX512信号完全自适应解码，无需进行任何速度设置，寻址可达4096通道。

TM512内置E2PROM，无需外接，同时支持在线写码，可通过地址写码线实现100米（点间距）*1024（TM512 级联点数）一次性在线写码。

芯片提供4个耐压24V以上的可达60毫安的高精度恒流输出通道，并且通过1个外接电阻来设定电流的输出大小。

TM512有PWM反极性降频输出功能，此功能适合外挂三极管，MOS管或大电流恒流驱动IC 的应用。

高端口刷新率，大幅提高画面刷新率。

TM512更可将多组恒流输出接口短路以扩大电流驱动能力。

它主要为建筑物装饰和舞台灯光效果LED 照明系统而设计，适合于需要并接的LED 照明系统，某一个芯片的异常完全不影响其他芯片的正常工作，维护简单方便。

本产品性能优良，质量可靠。

功能特点兼容并扩展DMX512(1990)信号协议控制方式：差分并联，最大支持4096个通道独家自适应解码技术，对信号传输速率200K～500kbps的DMX512信号可完全自适应解码内置E2PROM，无需外接E2PROM内置485接口模块，无需外加485内置485模块具有差分信号分辨率高，差分输入阻抗大的优点，可大大加强带载能力单独的地址串联写码线，可一次性自动写码，支持先安装后写码方式增强型在线级联写码方式，支持100米（点间距）*1024（TM512 级联点数）一次性在线写码 加强型写码线抗干扰设计，8项抗干扰和效验匹配设置确保不会因为写码线被干扰而误写码 E2位置外发式写码，确保IC在任何情况下（如上电掉电，电源干扰）不会对E2误写码E2地址码双备份模式，部分E2损坏也不影响地址码读取PWM控制端将256级灰度经伽码校正为1024级灰度画面刷新率2KHz以上内置5V稳压管输出耐压大于30伏特R/G/B/W 四位恒流輸出通道外置输出恒流可调电阻，每通道电流范围3～60mA±3%通道间电流差异值±3%芯片间电流差异值支持1/2/3/4组字段(slot)数据读取模式PWM 选择端可选择反极性降频功能，降频后端口刷新率为500Hz上电自检亮白灯，写码成功后亮蓝灯80nS输出通道迟滞，降低突波电流干扰工业级设计，性能稳定应用领域点光源，线条灯，洗墙灯，舞台灯光系统，室内外视频墙，装饰照明系统电平，数据位中的数据是0，则相应的时间段是低电平；数据是1，则相应的时间段是高电平。

micronmtfdkba512tfh参数

micronmtfdkba512tfh参数

micronmtfdkba512tfh参数Micron MTFDKBA512TFH 是一款 Micron Technology 公司生产的SATA 接口的固态硬盘（SSD）产品。

下面将介绍该产品的一些主要参数。

容量：Micron MTFDKBA512TFH 固态硬盘的总容量为 512GB（千兆字节），可以满足大多数用户的存储需求。

接口：该固态硬盘采用了SATAIII接口标准（6Gb/s），与主板或扩展卡的SATA插槽兼容。

尺寸：Micron MTFDKBA512TFH 固态硬盘的尺寸为 2.5 英寸，符合标准的硬盘尺寸，适用于大多数笔记本电脑和台式机。

读写速度：该固态硬盘具有出色的读写速度，能够提供更快的数据传输和载入速度。

具体的性能参数可能因不同的使用场景而有所差异。

耐用性：Micron MTFDKBA512TFH 采用固态技术，不包含任何机械部件，因此具有较长的寿命和更高的抗震性能。

此外，它还具有抗磁性，能够更好地保护数据的安全性。

功耗：固态硬盘比传统的机械硬盘具有更低的功耗，可以帮助延长笔记本电脑或台式机的电池寿命。

支持TRIM：Micron MTFDKBA512TFH 固态硬盘支持 TRIM 功能，可以通过操作系统轻松管理和优化固态硬盘的性能。

随机读写性能：该固态硬盘拥有优秀的随机读写性能，可以有效处理大量小文件的读写操作，提高文件传输速度和系统运行效率。

数据安全性：该固态硬盘支持硬件加密和数据保护功能，可以帮助用户保护存储在固态硬盘上的敏感数据。

兼容性：Micron MTFDKBA512TFH 固态硬盘兼容大多数操作系统，如Windows、Mac OS和Linux等。

它可以与现有的硬件设备连接和使用，无需进行额外的配置。

总结：Micron MTFDKBA512TFH 固态硬盘是一款高性能、高稳定性并具备较大存储容量的产品。

无论是用于日常办公、高速数据传输还是游戏娱乐，该固态硬盘都能提供出色的性能和用户体验。

MT41K512M16HA-107 IT_A

MT41K512M16HA-107 IT_A

Functional DescriptionDDR3 SDRAM uses a double data rate architecture to achieve high-speed operation.The double data rate architecture is an 8n-prefetch architecture with an interface de-signed to transfer two data words per clock cycle at the I/O pins. A single read or writeoperation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.The differential data strobe (DQS, DQS#) is transmitted externally, along with data, foruse in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with datafor WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to thedata strobes.The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CKgoing HIGH and CK# going LOW is referred to as the positive edge of CK. Control, com-mand, and address signals are registered at every positive edge of CK. Input data is reg-istered on the first rising edge of DQS after the WRITE preamble, and output data is ref-erenced on the first rising edge of DQS after the READ preamble.Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a se-lected location and continue for a programmed number of locations in a programmedsequence. Accesses begin with the registration of an ACTIVATE command, which is thenfollowed by a READ or WRITE command. The address bits registered coincident withthe ACTIVATE command are used to select the bank and row to be accessed. The ad-dress bits registered coincident with the READ or WRITE commands are used to selectthe bank and the starting column location for the burst access.The device uses a READ and WRITE BL8 and BC4. An auto precharge function may beenabled to provide a self-timed row precharge that is initiated at the end of the burstaccess.As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAMallows for concurrent operation, thereby providing high bandwidth by hiding row pre-charge and activation time.A self refresh mode is provided, along with a power-saving, power-down mode. Industrial TemperatureThe industrial temperature (IT) device requires that the case temperature not exceed–40°C or 95°C. JEDEC specifications require the refresh rate to double when T C exceeds85°C; this also requires use of the high-temperature self refresh option. Additionally,ODT resistance and the input/output impedance must be derated when T C is < 0°C or>95°C.General Notes•The functionality and the timing specifications discussed in this data sheet are for theDLL enable mode of operation (normal operation).•Throughout this data sheet, various figures and text refer to DQs as “DQ.” DQ is to beinterpreted as any and all DQ collectively, unless specifically stated otherwise.•The terms “DQS” and “CK” found throughout this data sheet are to be interpreted asDQS, DQS# and CK, CK# respectively, unless specifically stated otherwise.Functional Block DiagramsDDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internallyconfigured as an 8-bank DRAM.Figure 4: 1 Gig x 8 Functional Block DiagramFigure 5: 512 Meg x 16 Functional Block DiagramTable 3: 78-Ball FBGA – x4, x8 Ball Descriptions (Continued)8Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions质量等级领域:宇航级IC 、特军级IC 、超军级IC 、普军级IC 、禁运IC 、工业级IC ，军级二三极管，功率管等;应用领域:航空航天、船舶、汽车电子、军用计算机、铁路、医疗电子、通信网络、电力工业以及大型工业设备祝您:工作顺利，生活愉快!以深圳市美光存储技术有限公司提供的参数为例，以下为MT41K512M16HA-107 IT_A的详细参数，仅供参考。

MT25QL512ABB8ESF-0SIT

MT25QL512ABB8ESF-0SIT

Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB, Sector EraseMT25QL512ABBFeatures•SPI-compatible serial bus interface•Single and double transfer rate (STR/DTR)•Clock frequency–133 MHz (MAX) for all protocols in STR–90 MHz (MAX) for all protocols in DTR•Dual/quad I/O commands for increased through-put up to 90 MB/s•Supported protocols in both STR and DTR–Extended I/O protocol–Dual I/O protocol–Quad I/O protocol•Execute-in-place (XIP)•PROGRAM/ERASE SUSPEND operations •Volatile and nonvolatile configuration settings •Software reset•Reset pin available•3-byte and 4-byte address modes – enable memory access beyond 128Mb•Dedicated 64-byte OTP area outside main memory –Readable and user-lockable–Permanent lock with PROGRAM OTP command •Erase capability–Bulk erase–Sector erase 64KB uniform granularity–Subsector erase 4KB, 32KB granularity •Security and write protection–Volatile and nonvolatile locking and software write protection for each 64KB sector–Nonvolatile configuration locking–Password protection–Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size–Program/erase protection during power-up–CRC detects accidental changes to raw data •Electronic signature–JEDEC-standard 3-byte signature (BA20h)–Extended device ID: two additional bytes identify device factory options•JESD47H-compliant–Minimum 100,000 ERASE cycles per sector–Data retention: 20 years (TYP)Options Marking •Voltage– 2.7–3.6V L •Density–512Mb512•Device stacking–Monolithic A •Device generation B •Die revision B •Pin configuration–HOLD#1–RESET# and HOLD#8•Sector Size–64KB E •Packages – JEDEC-standard, RoHS-compliant–24-ball T-PBGA 05/6mm × 8mm(TBGA24)12–16-pin SOP2, 300 mil(SO16W, SO16-Wide, SOIC-16)SF–W-PDFN-8 8mm × 6mm(MLP8 8mm × 6mm)W9•Security features–Standard security0•Special options–Standard S–Automotive A •Operating temperature range–From –40°C to +85°C IT–From –40°C to +105°C AT–From –40°C to +125°C UTFigure 51: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) (94)Figure 52: Hold Timing (94)Figure 53: Output Timing for STR (95)Figure 54: Output Timing for DTR (95)Table 51: AC Characteristics and Operating Conditions (89)Table 52: AC RESET Conditions (92)Table 53: Program/Erase Specifications (96)Device DescriptionThe MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-ty, advanced write protection mechanisms, and extended address access. Innovative,high-performance, dual and quad input/output commands enable double or quadru-ple the transfer bandwidth for READ and PROGRAM operations.Figure 2: Block DiagramNote: 1.Each page of memory can be individually programmed, but the device is not page-eras-able.512Mb, 3V Multiple I/O Serial Flash Memory Device Description。