MTB1306-D
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MTB1306
Preferred Device
Power MOSFET
75 Amps, 30 Volts, Logic Level
N−Channel D 2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also
pad size.
Preferred devices are recommended choices for future use and best overall value.
ELECTRICAL CHARACTERISTICS(T
= 25°C unless otherwise noted)
3.Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (N O R M A L I Z E D )
R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (O H M S )
075125
150
I D , D R A I N C U R R E N T (A M P S )
−50
1015202530
T J , JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
−25
0255075100125
150
5010025 5.0
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t)are determined by how fast the FET input capacitance can be charged by current from the generator.
The published capacitance data is difficult to use for calculating rise and fall because drain−gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (I G(A V)) can be made from a
t = Q/I G(A V)
t r = Q 2 x R G t f = Q 2 x R G where
V GG R G and Q 2values t d(on) = R G C t d(off) = R G C The capacitance (C iss ) is read from the capacitance curve at a voltage corresponding to the off−state condition when calculating t d(on) and is read at a voltage corresponding to the on−state when calculating t d(off).
At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths,produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt V GS OR V DS , GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V G S , G A T E −T O −S O U R C E V O L T A G E (V O L T S )
7.5
5.0
010
2.5
(I DM T J , STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
V DS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
0.110
I D , D R A I N C U R R E N T (A M P S )
25
507510012510001.0
10150
100
r (t ), N O R M A L I Z E D E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E
PACKAGE DIMENSIONS
D2PAK
CASE 418B−03
ISSUE D
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