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2SC2295中文资料

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0.4 –0.05
Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
– 0.6 – 0.5
–120 – 0.4 – 0.3 – 0.2 – 0.1 0 0 20 40 60 80 100
Reverse transfer conductance gre (mS)
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE — IC
240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 – 0.1 – 0.3
fT — I E
60
Zrb — IE
Reverse transfer impedance Zrb (Ω)
(Ta=25˚C)
Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = –1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCB = 10V, IE = –1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB Ω pF Unit µA
6
60µA
7.5
4
40µA
5.0
2
20µA
2.5
0 0 6 12
0 0 20 40 60 80 100
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base current IB (µA)
IB — VBE
120 VCE=10V Ta=25˚C 100 50 60
Output susceptance boe (mS)
1.0
=–1mA 100
– 0.3
58
–60
IE=–4mA 100 58
0.6 58 0.4
– 0.4
100
–80
– 0.5
–100 yfe=gfe+jbfe VCE=10V
0.2 f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5
80
40 Ta=75˚C 30
25˚C
–25˚C
60
Ta=75˚C 25˚C
40
20
0.1 –25˚C 0.03 0.01 0.1
20
10
0 0 0.2 0.4 0.6 0.8 1.0
0 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
30
100
Base to emitter voltage VBE (V)
IC — VBE
Collector to emitter saturation voltage VCE(sat) (V)
100 30 10 3 1 0.3 VCE=10V
VCE(sat) — IC
IC/IB=10
Collector current IC (mA)
Base current IB (µA)
元器件交易网
Transistor
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification Complementary to 2SA1022
Unit: mm
s Features
q q q
VCB=10V f=100MHz Ta=25˚C VCB=10V f=2MHz Ta=25˚C
Forward current transfer ratio hFE
200
Transition frequency fT (MHz)
50
160
Ta=75˚C 25˚C
40
120 –25˚C 80
30
20
40
*h
FE
Rank classification
Rank hFE Marking Symbol B 70 ~ 140 VB C 110 ~ 220 VC
0 to 0.1
Ratings
Unit
0.1 to 0.3 0.4±0.2
0.8
(Ta=25˚C)
1.1 –0.1
0.16 –0.06
+0.2
+0.1
Collector power dissipation PC (mW)
Collector current IC (mA)
175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140
8
80µA
Collector current IC (mA)
18
200
10.0
f=10.7MHz 0
– 0.1mA f=10.7MHz 58
boe — goe
1.2
10.7
Reverse transfer susceptance bre (mS)
yre=gre+jbre VCE=10V
–1mA 100
yoe=goe+jboe VCE=10V
– 0.1 IE=–1mA
–20
58 –2mA 100
10
0.3
1
3
10
30
100
–1
–3
–10
–30
–100
0 – 0.1
– 0.3
–1
–3
–10
Collector current IC (mA)
Emitter current IE (mA)
Emitter current IE (mA)
2
元器件交易网
Transistor
30 20 5 30 200 150 –55 ~ +150
V V V mA mW ˚C ˚C
1:Base 2:Emitter 3:Collector
JEDEC:TO–236 EIAJ:SC–59 Mini Type Package
Marking symbol : V
s Electrical Characteristics
0 – 0.3 –1 –3 –10 0 8 16 24 32 40
Collector to emitter voltage VCE (V)
Emitter current IE (mA)
Input conductance gie (mS)
bre — gre
0
bfe — gfe
Forward transfer susceptance bfe (mS)
0.95
2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
+0.1
1.45
1
元器件交易网
Transistor
PC — Ta
250 12 Ta=25˚C 225 10 IB=100µA 12.5
2SC2295
IC — VCE
15.0 VCE=10V Ta=25˚C
IC — I B
Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance
bie — gie
Input susceptance bie (mS)
20 –4mA 16
IE=–1mA
–7mA 100
2.0 IC=3mA 1.5 1mA
Noise figure NF (dB)
8
–2mA
58
6
12
1.0
4
8
0.5
2
4
f=10.7MHz
0 0.1
0.3
1
3
10
30
100
0 – 0.1
2.8 –0.3 0.65±0.15
+0.2
1.5 –0.05
+0.25
0.65±0.15
2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO CEBO IC PC Tj Tstg
3
Cre — VCE

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2SK3295-ZJ中文资料

2SK3295-ZJ中文资料


GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3 VDS = 10 V ID = 1 mA
2
VGS(off) - Gate to Source Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
1
0
−50
0
50
100
150
Tch - Channel Temperature - ˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
50 Pulsed
40 ID = 28 A
18 A
30
7A
20
10
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
TYPICAL CHARACTERISTICS (TA = 25°C)
ID - Drain Current - A
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
160
120
VGS =10 V
7.0 V
80
4.5 V 40
0
0
1
Pulsed
2
3
VDS - Drain to Source Voltage - V
1000 100
Pulsed VDS = 10 V
10 1
0.1 0.01
Tch = −50˚C −25˚C 25˚C 75˚C 150˚C
2SK2955中文资料

2SK2955中文资料


t rr
—
Note: 4. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
10
µA
—
2.5 V
0.010 0.013 Ω
0.015 0.025 Ω
40
—
S
2200 —
pF
1050 —
pF
320 —
pF
25
—
ns
200 —
ns
320 —
ns
240 —
ns
0.95 —
V
60
—

Drain to Source Voltage V DS (V)
5
2SK2955
Reverse Drain Current I DR (A) Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage 50
40
30 10 V
5V
VGS = 0, –5 V
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Maximum Avalanche Energy vs. Channel Temperature Derating 200
L
I AP Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1 2
• L • I AP2•
2SC2655中文资料

2SC2655中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)2SC2655Power Amplifier Applications Power Switching Applications• Low saturation voltage: V CE (sat) = 0.5 V (max) (I C = 1 A) • High collector power dissipation: P C = 900 mW • High-speed switching: t stg = 1.0 μs (typ.) • Complementary to 2SA1020.Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 50 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO5 VCollector current I C 2 A Base currentI B 0.5 ACollector power dissipation P C 900 mWJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Industrial ApplicationsUnit: mmJEDEC TO-92MOD JEITA ―TOSHIBA 2-5J1AWeight: 0.36 g (typ.)Electrical Characteristics (Ta = 25°C)Note: h FE (1) classification O: 70 to 140, Y: 120 to 240Markinglead (Pb)-free package or lead (Pb)-free finish.indicatorCollector-emitter voltage V CE (V)I C – V CEC o l l e c t or c u r r e n t I C (A )Collector current I C (A)V CE – I CC o l l e c t o r -em i t t e r v o lt a g e V C E (V )Collector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t i on v o l t a g e VC E (s a t ) (V )Collector current I C (A)h FE – I CD C c u r r e n tg a i n h F ECollector current I C (A)V CE – I CC o l l e c t o r -e m itt e r v o l t a g eV C E (V )Collector current I C (A)V CE – I CC o l l e c t o r -em i t t e r v o l t a g e V C E (V )0.010.03 0.1 14 6 8 10Collector current I C (A)V BE (sat) – I CB a s e -e m i t t e r s a t u r a t io n v ol t a g e V B E (s a t ) (V )I C – V BEC ol l e c t or c ur r e n t I C (A )Base-emitter voltage V BE (V)C o l l e c t o rc ur r e nt I C (A )Collector-emitter voltage V CE (V)Safe Operating AreaAmbient temperature Ta (°C)P C – TaC o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )20040080010000.2 1 3 10 300.5 100RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SC3735B35中文资料(RENESAS)中文数据手册「EasyDatasheet - 矽搜」

2SC3735B35中文资料(RENESAS)中文数据手册「EasyDatasheet - 矽搜」


t （当T , I = I = 10 mA)
t
见 测试电路
t
hFE 分类
打标
h
B33 40至80
B34 60至120
B35 100至200
封装图（单位： mm）
0.4
0.95 2.9±0.2
0.95
0.3
2.8±0.2
1.5
0.65
2
3
1
0.4
打标
0.16 1.1至1.4
1.发射器 2.基 3.收藏家
防止它们之间物理损伤一个故障情况下所造成火灾可能性,和伤害或损害 瑞萨电子产品,如安全设计硬件和软件,包括但不限于冗余度,防火和防故障,老化退化或其他任何适当措施,适当治 疗.因为单独微机软件评价是非常困难,请评价您所生产最终产品或系统安全性.
10. 请联系瑞萨电子销售处细节,以环境问题,如环境 每个瑞萨电子产品兼容性.请使用瑞萨电子产品符合所有适用 调控受控物质列入或使用,包括但不限于欧盟RoHS法规 指示.瑞萨电子承担对于因您不遵守适用法律法规而导致损害或损失不承担任何责任.
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1985, 2008
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产量
INPUT
t 交换
INPUT
产量
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INPUT
t 交换
INPUT
产量
产量
INPUT
t 交换
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