三极管数据手册说明书
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BTA330B-800CT
3Q Hi-Com Triac
Rev.01 - 16 October 2019Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable
plastic package intended for use in circuits where high static and dynamic dV/dt and high dIT/dt can
occur. This triac will commutate the full RMS current at the maximum rated junction temperature
(Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where high junction operating
temperature capability is required.
2. Features and benefits
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High junction operating temperature capability (Tj(max) = 150 °C)
• High voltage capability
• High current capability
• Less sensitive gate for highest noise immunity
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt and fast transients
• Surface mountable plastic package
• Package is RoHS compliant
3. Applications
• Heating controls
• High power motor control
• High power switching
• Applications subject to high temperature (Tj(max) = 150 °C)
4. Quick reference dataTable 1. Quick reference data
Symbol Parameter Conditions MinTypMax Unit
VDRM repetitive peak off-state
voltage - - 800 V
IT(RMS) RMS on-state currentfull sine wave; Tmb ≤ 120 °C;
Fig. 1; Fig. 2; Fig. 3 - - 30 A
ITSM non-repetitive peak on-
state currentfull sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5 - - 270 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 297 A
Tj junction temperature - - 150 °C
Static characteristics
IGT gate trigger currentVD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7 - - 35 mAWeEn SemiconductorsBTA330B-800CT3Q Hi-Com Triac
BTA330B-800CTProduct data sheetAll information provided in this document is subject to legal disclaimers.© WeEn Semiconductors Co., Ltd. 2019. All rights reserved16 October 20192 / 12 Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7 - - 35 mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7 - - 35 mA
IH holding currentVD = 12 V; Tj = 25 °C; Fig. 9 - - 50 mA
VT on-state voltageIT = 42 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V
Dynamic characteristics
dVD/dtrate of rise of off-state
voltageVDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 2000 - - V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit 1000 - - V/μs
dIcom/dtrate of change of
commutating currentVD = 400 V; Tj = 125 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit 16 - -A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A;
dVcom/dt = 20 V/µs; (snubberless
condition); gate open circuit 13 - -A/ms
5. Pinning informationTable 2. Pinning information
Pin Symbol DescriptionSimplified outlineGraphic symbol
1 T1 main terminal 1
12
3sym051T1
GT22 T2main terminal 2
3 Ggate
mb T2mounting base; main terminal 2
6. Ordering informationTable 3. Ordering information
Type number Package
Name Orderable part number Packing
method Small packing
quantity Package
version Package
issue date
BTA330B-800CT TO263BTA330B-800CTJ Reel 800 TO263E 26-May-2017
7. Marking
Type number Marking codes
BTA330B-800CT BTA330B-800CTTable 4. Marking codesWeEn SemiconductorsBTA330B-800CT3Q Hi-Com Triac
BTA330B-800CTProduct data sheetAll information provided in this document is subject to legal disclaimers.© WeEn Semiconductors Co., Ltd. 2019. All rights reserved16 October 20193 / 128. Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter ConditionsMinMax Unit
VDRM repetitive peak off-state
voltage - 800 V
IT(RMS) RMS on-state currentfull sine wave; Tmb ≤ 120 °C;
Fig. 1; Fig. 2; Fig. 3 - 30 A
ITSM non-repetitive peak on-
state currentfull sine wave; Tj(init) = 25 °C; tp = 20 ms;
Fig. 4; Fig. 5 - 270 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 297 A
I2t I2t for fusingtP = 10 ms; sine wave pulse - 364.5 A2s
dIT/dt rate of rise of on-state
currentIG = 70 mA - 100 A/μs
IGM peak gate current - 2 A
PGM peak gate power - 5 W
PG(AV) average gate powerover any 20 ms period - 0.5 W
Tstg storage temperature -40 150 °C
Tj junction temperature - 150 °C
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values f = 50 Hz; Tmb = 120 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
