MBRB1060中文资料

材料1060材料1060是一种新型的高强度、高韧性的金属材料，具有广泛的应用前景。

它由多种金属元素合金化而成，具有优异的力学性能和耐腐蚀性能，适用于航空航天、汽车制造、建筑结构等领域。

本文将对材料1060的特性、应用以及未来发展进行介绍。

首先，材料1060的主要特性是高强度和高韧性。

由于其特殊的合金化成分和热处理工艺，使得材料1060具有优异的力学性能，能够承受较大的载荷而不易变形或断裂。

同时，材料1060还具有良好的耐腐蚀性能，能够在恶劣环境下长期使用而不受损害。

这些特性使得材料1060在工程领域中具有广泛的应用前景。

其次，材料1060在航空航天、汽车制造、建筑结构等领域有着重要的应用。

在航空航天领域，材料1060可以用于制造飞机结构件、发动机零部件等，其高强度和耐腐蚀性能能够保障飞行器的安全和可靠性。

在汽车制造领域，材料1060可以用于制造车身结构、发动机零部件等，能够提高汽车的安全性和燃油经济性。

在建筑结构领域，材料1060可以用于制造桥梁、高楼大厦等，其高强度和耐腐蚀性能能够提高建筑物的使用寿命和安全性。

可以说，材料1060在各个领域都有着重要的应用价值。

最后，材料1060在未来有着广阔的发展前景。

随着工程技术的不断进步和市场需求的不断增长，材料1060的应用领域将会不断扩大。

同时，随着材料科学的发展，材料1060的性能也将不断得到提升，使其在更多领域得到应用。

因此，可以预见，材料1060将会成为未来工程材料领域的重要代表之一。

综上所述，材料1060具有高强度、高韧性和优异的耐腐蚀性能，适用于航空航天、汽车制造、建筑结构等领域，未来发展前景广阔。

相信随着科技的不断进步和应用的不断拓展，材料1060将会在工程材料领域发挥越来越重要的作用。

0.74 18.79
0.065 1.651 0.420 10.66 0.07 1.78 0.14 3.56
inches mm
0.330 8.38
D2PAK POWER DISSIPATION
The power dissipation of the D2PAK is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the D2PAK package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The 50°C/W for the D2PAK package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 2.5 watts. There are other alternatives to achieving higher power dissipation from the D2PAK package. One is to increase the area of the drain pad. By increasing the area of the drain pad, the power dissipation can be increased. Although one can almost double the power dissipation with this method, one will be giving up area on the printed circuit board which can defeat the purpose of using surface mount technology. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

MBRB735 THRU MBRB760SCHOTTKY RECTIFIERReverse Voltage - 35 to 60 Volts Forward Current -7.5 AmperesFEATURESRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS MBRB735MBRB745MBRB750MBRB760UNITS Maximum repetitive peak reverse voltage V RRM35455060Volts Maximum working peak reverse voltage V RWM35455060Volts Maximum DC blocking voltage V DC35455060Volts Maximum average forward rectified current (SEE FIG 1)I(AV)7.5Amps Peak repetitive forward current (square wave, 20 KH Z)at T C=105°CI FRM15.0Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM150.0Amps Peak repetitive reverse surge current (NOTE 1)I RRM 1.00.5Amps Maximum instantaneous I F=7.5A, T C=25°C-0.75forward voltage at I F=7.5A, T C=125°CV F 0.570.65Volts(NOTE2)I F=15A, T C=25°C0.84-I F=15A, T C=125°C0.72-Maximum instantaneous reverse current atrated DC blocking voltage T C=25°C I R0.10.5mA (NOTE 1)T C=125°C15.050.0Voltage rate of change (rated V R)dv/dt10,0001,000V/µs Maximum thermal resistance,(NOTE 3)RΘJC 3.0°C/W Operating junction temperature range T J-65 to +150°C Storage temperature range T STG-65 to +175°C NOTES:(1) 2.0µs, pulse width, f=1.0 KH Z(2) Pulse test: 300µs pulse width, 1% duty cycle(3) Thermal resistance from junction to case4/98TO-263AB11010025507510012515017500.10.20.30.40.50.60.70.80.9 1.01.1 1.20.010.1110500.1110100401001,0004,0000.010.11101000.11101000501001500246810204060801000.0010.010.111050FIG. 1 - FORWARD CURRENT DERATING CURVECASE TEMPERATURE, °CA V E R A G E F O R W A R D C U R R E N T ,A M P E R E SFIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTNUMBER OF CYCLES AT 60 H ZP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E SFIG. 3 - TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSFIG. 4 - TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T , A M P E R E SI N S T A N T A N E O U S R E V E R S E C U R R E N T , M I L L I A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTSPERCENT OF RATED PEAK REVERSEVOLTAGE, %FIG. 5 - TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E , p FREVERSE VOLTAGE, VOLTST J =T J max.8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)T J =75°CT J =25°CT J =25°CT J =125°CPULSE WIDTH = 300µsT J =25°C f=1.0 MHz Vsig=50mVp-pRESISTIVE OR INDUCTIVE LOADT J =125°CFIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCEt, PULSE DURATION, sec.T R A N S I E N T T H E R M A L I M P E D A N C E , °C /WMBR735 - MBR745MBR750 & MBR760MBRB735 - MBRB745MBRB750 & MBBR760MBRB735 - MBRB745MBRB750 & MBBR760MBRB735 - MBRB745MBRB750 & MBBR760RATINGS AND CHARACTERISTIC CURVES MBRB735 THRU MBRB760。

20 10 MBR1035-MBR1045
1
MBR1050-MBR1060
0.1
T A= 125ºC TA = 75º C
0.01
MBR1035-MBR1045
TA = 25º C
0.001 0
MBR1050-MBR1060
20
40
60
80 100 120
Percent of Rated Peak Reverse Voltage [%]
INDUCTIVE LOAD
2 .375" (9.00mm) LOAD
LENGTHS
0 0 25 50 75 100 125 150 175 Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A]
0.5
Units
V V V V mA mA A
© 2012 Fairchild Semiconductor Corporation
MBR1035 - MBR1060 Rev. D0
1

/
MBR1035 - MBR1060 — Schottky Rectifie源自s354550
60
V
10
A
150
A
Tstg Storage Temperature Range
-65 to +175
°C
TJ Operating Junction Temperature
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.