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20N60C

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HGTG20N60C3, HGTP20N60C3,HGT1S20N60C3S45A, 600V, UFS Series N-Channel IGBTThis family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly developmental type TA49178.Symbol Features•45A, 600V, T C = 25o C•600V Switching SOA Capability•Typical Fall Time. . . . . . . . . . . . . . . . 108ns at T J = 150o C •Short Circuit Rating•Low Conduction Loss•Related Literature-TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”PackagingJEDEC STYLE TO-247JEDEC TO-220AB (ALTERNATE VERSION)JEDEC TO-263ABOrdering InformationPART NUMBER PACKAGE BRAND HGTG20N60C3TO-247G20N60C3HGTP20N60C3TO-220AB G20N60C3HGT1S20N60C3S TO-263AB G20N60C3NOTE:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e.,HGT1S20N60C3S9A.CEGGCECOLLECTOR(FLANGE)GCECOLLECTOR(FLANGE)GCOLLECTORE(FLANGE)INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS4,364,0734,417,3854,430,7924,443,9314,466,1764,516,1434,532,5344,587,713 4,598,4614,605,9484,620,2114,631,5644,639,7544,639,7624,641,1624,644,637 4,682,1954,684,4134,694,3134,717,6794,743,9524,783,6904,794,4324,801,986 4,803,5334,809,0454,809,0474,810,6654,823,1764,837,6064,860,0804,883,767 4,888,6274,890,1434,901,1274,904,6094,933,7404,963,9514,969,027Data Sheet December 2001Absolute Maximum Ratings T C = 25o C, Unless Otherwise SpecifiedALL TYPES UNITS Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES600V Collector Current ContinuousAt T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C2545A At T C = 110o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C11020A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I CM300A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GES±20V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM±30V Switching Safe Operating Area at T J = 150o C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA20A at 600VPower Dissipation Total at T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D164W Power Dissipation Derating T C > 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32W/o C Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E ARV100mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T J, T STG-55 to 150o C Maximum Temperature for SolderingLeads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T L Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T pkg 300260o Co CShort Circuit Withstand Time (Note 2) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC4µsShort Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t SC10µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.NOTES:1.Pulse width limited by maximum junction temperature.2.V CE(PK) = 360V, T J = 125o C, R G = 10Ω.Electrical Specifications T C = 25o C, Unless Otherwise SpecifiedPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = 250µA, V GE = 0V600--V Emitter to Collector Breakdown Voltage BV ECS I C = 10mA, V GE = 0V1528-V Collector to Emitter Leakage Current I CES V CE = BV CES T C = 25o C--250µAT C = 150o C-- 5.0mACollector to Emitter Saturation Voltage V CE(SAT)I C = I C110V GE = 15V T C = 25o C- 1.4 1.8V T C = 150o C- 1.5 1.9VGate to Emitter Threshold Voltage V GE(TH)I C = 250µA, V CE = V GE 3.4 4.8 6.3V Gate to Emitter Leakage Current I GES V GE = ±20V--±250nASwitching SOA SSOA T J = 150o C, R G =10Ω, V GE = 15V,L = 100µH V CE = 480V120--A V CE = 600V20--AGate to Emitter Plateau Voltage V GEP I CE = I C110, V CE = 0.5 BV CES-8.4-VOn-State Gate Charge Q G(ON)I CE = I C110V CE = 0.5 BV CES V GE = 15V-91110nC V GE = 20V-122145nCCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 25o CI CE = I C110V CE = 0.8 BV CESV GE = 15VR G = 10ΩL = 1mHTest Circuit (Figure 17)-2832nsCurrent Rise Time t rI-2428ns Current Turn-Off Delay Time t d(OFF)I-151210ns Current Fall Time t fI-5598ns Turn-On Energy (Note 4)E ON1-295320µJ Turn-On Energy (Note 4)E ON2-500550µJ Turn-Off Energy (Note 3)E OFF-500700µJCurrent Turn-On Delay Time t d(ON)I IGBT and Diode at T J = 150o C I CE = I C110V CE = 0.8 BV CES V GE = 15V R G = 10ΩL = 1mHTest Circuit (Figure 17)-2832ns Current Rise Timet rI -2428ns Current Turn-Off Delay Time t d(OFF)I -280450ns Current Fall Time t fI -108210ns Turn-On Energy (Note 4)E ON1-380410µJ Turn-On Energy (Note 4)E ON2- 1.0 1.1mJ Turn-Off Energy (Note 3)E OFF - 1.2 1.7mJThermal Resistance Junction To Case R θJC--0.76o C/WNOTES:3.T urn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.4.Values for two T urn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T J as the IGBT . The diode type is specified in Figure 17.Typical Performance CurvesUnless Otherwise SpecifiedFIGURE 1.DC COLLECTOR CURRENT vs CASETEMPERATUREFIGURE 2.MINIMUM SWITCHING SAFE OPERATING AREAFIGURE 3.OPERATING FREQUENCY vs COLLECTOR TOEMITTER CURRENTFIGURE 4.SHORT CIRCUIT WITHSTAND TIMEElectrical SpecificationsT C = 25o C, Unless Otherwise Specified (Continued)PARAMETERSYMBOL TEST CONDITIONSMIN TYP MAX UNITS T C , CASE TEMPERATURE (o C)I C E , D C C O L L E C T O R C U R R E N T (A )50V GE = 15V257510012515050301020400V CE , COLLECTOR TO EMITTER VOLTAGE (V)6070040I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )20300400200100500600080100120140T J = 150o C, R G = 10Ω, V GE = 15V, L = 100µH0f M A X , O P E R A T I N G F R E Q U E N C Y (k H z )2I CE , COLLECTOR TO EMITTER CURRENT (A)1051100401020f MAX1 = 0.05 / (t d(OFF)I + t d(ON)I )R ØJC = 0.76o C/W, SEE NOTES P C = CONDUCTION DISSIPATION (DUTY FACTOR = 50%)f MAX2 = (P D - P C ) / (E ON2 + E OFF )T C V GE 110o C 10V15V 75o C 110o C 75o C10V 15V T J = 150o C, R G = 10Ω, L = 1mH, V CE = 480VV GE , GATE TO EMITTER VOLTAGE (V)I S C , P E A K S H O R T C I R C U I T C U R R E N T (A )t S C , S H O R T C I R C U I T W I T H S T A N D T I M E (µs )1011121314152468150200250300350t SCI SC101214400450V CE = 360V, R G = 10Ω, T J = 125o CFIGURE 5.COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6.COLLECTOR TO EMITTER ON-STATE VOLTAGEFIGURE 7.TURN-ON ENERGY LOSS vs COLLECTOR TOEMITTER CURRENT FIGURE 8.TURN-OFF ENERGY LOSS vs COLLECTOR TOEMITTER CURRENTFIGURE 9.TURN-ON DELAY TIME vs COLLECTOR TOEMITTER CURRENT FIGURE 10.TURN-ON RISE TIME vs COLLECTOR TOEMITTER CURRENT2V CE , COLLECTOR TO EMITTER VOLTAGE (V)I C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )02084806040100610PULSE DURATION = 250µsDUTY CYCLE <0.5%, V GE = 10V T C = -55o CT C = 150o CT C = 25o CI C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )V CE , COLLECTOR TO EMITTER VOLTAGE (V)15020025030002305014100DUTY CYCLE <0.5%, V GE = 15V PULSE DURATION = 250µsT C = 150o CT C = -55o CT C = 25o C56E O N 2, T U R N -O N E N E R G Y L O S S (m J )2.51.5I CE , COLLECTOR TO EMITTER CURRENT (A)2.01.00.52010251553.00303540T J = 25o C, T J = 150o C, V GE = 15VT J = 25o C, T J = 150o C, V GE = 10VR G = 10Ω, L = 1mH, V CE = 480V3.54.0I CE , COLLECTOR TO EMITTER CURRENT (A)E OF F , T U R N -O F F E N E RG Y L O S S (m J )0.52520101551.02.52.01.53035403.0T J = 25o C; V GE = 10V OR 15VT J = 150o C; V GE = 10V OR 15VR G = 10Ω, L = 1mH, V CE = 480V I CE , COLLECTOR TO EMITTER CURRENT (A)t d I ,T U R N -O N D E L A Y T I M E (n s )20101552530354040302035254550R G = 10Ω, L = 1mH, V CE = 480VT J = 25o C, T J = 150o C, V GE = 15VT J = 25o C, T J = 150o C, V GE = 10VI CE , COLLECTOR TO EMITTER CURRENT (A)t r I ,R I S E T I M E (n s )2505075125100150101554030203525175200T J = 25o C AND T J = 150o C, V GE = 15VT J = 25o C, T J = 150o C, V GE = 10VR G = 10Ω, L = 1mH, V CE = 480VFIGURE 11.TURN-OFF DELAY TIME vs COLLECTOR TOEMITTER CURRENT FIGURE 12.FALL TIME vs COLLECTOR TO EMITTERCURRENTFIGURE 13.TRANSFER CHARACTERISTIC FIGURE 14.GATE CHARGE WAVEFORMSFIGURE 15.CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE101525525020100175125150200225I CE , COLLECTOR TO EMITTER CURRENT (A)t d (O F F )I , T U R N -O F F D E L A Y T I M E (n s )303540R G = 10Ω, L = 1mH, V CE = 480VT J = 150o C, V GE = 10V , V GE = 15VT J = 25o C, V GE = 10V, V GE = 15V 275300I CE , COLLECTOR TO EMITTER CURRENT (A)t f I , F A L L T I M E (n s )608010040507090102025515303540R G = 10Ω, L = 1mH, V CE = 480V110120T J = 150o C, V GE = 10V OR V GE = 15VT J = 25o C, V GE = 10V OR 15VI C E , C O L L E C T O R T O E M I T T E R C U R R E N T (A )501001505789106V GE , GATE TO EMITTER VOLTAGE (V)1120025030012131415PULSE DURATION = 250µsDUTY CYCLE <0.5%, V CE = 10V T C = 150o CT C = 25o CT C = -55o CQ g , GATE CHARGE (nC)08106420102040V G E , G A T E T O E M I T T E R V O L T A G E (V )5010030121416I G (REF) = 1mA, R L = 15Ω, T C = 25o CV CE = 400VV CE = 200VV CE = 600V60708090V CE , COLLECTOR TO EMITTER VOLTAGE (V)5101520250C , C A P A C I T A N C E (n F )12345C IESC OESC RESFREQUENCY = 1MHzFIGURE 16.NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASETest Circuit and WaveformsFIGURE 17.INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 18.SWITCHING TEST WAVEFORMSt 1,RECTANGULAR PULSE DURATION (s)Z θJ C ,N O R M A L I Z E D T H E R M A L R E S P O N S E10-310-210-110010-510-310-210-110010110-40.10.20.050.02SINGLE PULSEt 1t 2P DDUTY FACTOR, D = t 1 / t 2PEAK T J = (P D X Z θJC X R θJC ) + T C0.50.01R G = 10ΩL = 1mHV DD = 480V+-RHRP3060t fIt d(OFF)It rI t d(ON)I10%90%10%90%V CEI CEV GEE OFFE ON2Handling Precautions for IGBTsInsulated Gate Bipolar T ransistors are susceptible togate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:1.Prior to assembly into a circuit, all leads should be keptshorted together either by the use of metal shortingsprings or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.2.When devices are removed by hand from their carriers,the hand being used should be grounded by any suitable means - for example, with a metallic wristband.3.Tips of soldering irons should be grounded.4.Devices should never be inserted into or removed fromcircuits with power on.5.Gate Voltage Rating - Never exceed the gate-voltagerating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region.6.Gate Termination - The gates of these devices areessentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.7.Gate Protection - These devices do not have an internalmonolithic Zener diode from gate to emitter. If gateprotection is required an external Zener is recommended.Operating Frequency InformationOperating frequency information for a typical device (Figure3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.f MAX1 is defined by f MAX1 = 0.05/(t d(OFF)I+ t d(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. t d(OFF)I and t d(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. t d(OFF)I is important when controlling output ripple under a lightly loaded condition.f MAX2 is defined by f MAX2 = (P D - P C)/(E OFF + E ON2). The allowable dissipation (P D) is defined by P D = (T JM - T C)/RθJC. The sum of device switching and conduction losses must not exceed P D. A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated byP C=(V CE x I CE)/2.E ON2 and E OFF are defined in the switching waveforms shown in Figure 18. E ON2 is the integral of the instantaneous power loss (I CE x V CE) during turn-on and E OFF is the integral of the instantaneous power loss(I CE x V CE) during turn-off. All tail losses are included in the calculation for E OFF; i.e., the collector current equals zero (I CE = 0).。

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SPP20N60元件参数

SPP20N60元件参数


Marking 20N60S5 20N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
-
t d(off)
-
120 - ns
25
-
140 210
Fall time
tf
-
30 45
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=350V, ID=20A
Gate to drain charge
Qgd
Gate charge total
0.012 0.091
Unit Ws/K
Ptot (t)
Tj R th1
C th 1
C th 2
Rth,n Tcase External Heatsink
C th ,n
Tamb
Rev. 2.1
Page 4
2004-03-30
SPP20N60S5 SPB20N60S5
1 Power dissipation Ptot = f (TC)
Symbol dv/dt
Value 20
Unit V/ns
Symbol RthJC RthJA
Tsold
Values
Unit
min. typ. max.
-
IXDP20N60B;IXDP20N60BD1;中文规格书,Datasheet资料

IXDP20N60B;IXDP20N60BD1;中文规格书,Datasheet资料

J 0.64 1.01 K 2.54 BSC
M 4.32 4.82 N 1.14 1.39
Q 0.35 0.56 R 2.29 2.79
Inches Min. Max.
0.500 0.550 0.580 0.630
0.390 0.420 0.139 0.161
0.230 0.270 0.100 0.125
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 20N60 B VCES = 600 V
IXDP 20N60 BD1 IC25
= 32 A
V = CE(sat) typ 2.2 V
C
C
TO-220 AB
1-4
/
IXDP 20N60 B IXDP 20N60 BD1
Symbol
Cies C
oes
Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
easy paralleling q MOS input, voltage controlled q optional ultra fast diode q International standard package
Advantages
q Space savings q High power density
80
RG = 22W
A TJ = 125°C ICM 60
天高微 CS20N60

天高微 CS20N60

Silicon N-Channel Power MOSFETCS20N60ANDWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 1 o f 10 2011○R Huajing Discrete DevicesGeneral Description ：CS20N60AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.Features ：z Fast Switchingz Low ON Resistance(Rdson ≤0.32Ω)z Low Gate Charge (Typical Data:95nC )z Low Reverse transfer capacitances (Typical:38pF) z 100% Single Pulse avalanche energy TestApplications ：Automotive 、DC Motor Control and Class D Amplifier.Absolute （Tc= 25℃ unless otherwise specified ）：Symbol ParameterRating Units V DSS Drain-to-Source Voltage 600 V Continuous Drain Current20 A I D Continuous Drain Current T C = 100 °C 13 A I DMa1Pulsed Drain Current 80 A V GS Gate-to-Source Voltage±30 VE AS a2Single Pulse Avalanche Energy 1500 mJ E ARa1Avalanche Energy ,Repetitive 250 mJ I ARa1Avalanche Current7.1 A dv/dt a3Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation280 W P DDerating Factor above 25°C2.24W/℃V ESD(G-S)Gate source ESD (HBM-C= 100pF, R=1.5k Ω)6000VT J ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150℃ T LMaximumTemperature for Soldering300℃V DSS 600 V I D 20 AP D (T C =25℃) 280 W R DS(ON)Typ 0.23 ΩWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 2 o f 10 2011○R CS20N60ANDHuajing Discrete DevicesElectrical Characteristics （Tc= 25℃ unless otherwise specified ）：OFF Characteristics RatingSymbol Parameter Test ConditionsMin. Typ. Max.UnitsV DSSDrain to Source Breakdown VoltageV GS =0V, I D =250µA 600 -- -- VΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.6 -- V/℃V DS = 600V, V GS = 0V,T a = 25℃-- -- 25 I DSS Drain to Source Leakage Current V DS =480V, V GS = 0V, T a = 125℃-- -- 250µAI GSS(F) Gate to Source Forward Leakage V GS =+30V -- -- 10 µA I GSS(R)Gate to Source Reverse LeakageV GS =-30V-- -- -10µAON Characteristics RatingSymbol Parameter Test ConditionsMin. Typ. Max.Units R DS(ON) Drain-to-Source On-Resistance V GS =10V,I D =10A -- 0.23 0.32Ω V GS(TH)Gate Threshold VoltageV DS = V GS , I D = 250µA2.0 4.0VPulse width tp ≤380µs,δ≤2%Dynamic Characteristics Rating Symbol Parameter Test ConditionsMin. Typ. Max.Unitsg fs Forward Transconductance V DS =15V, I D =10A-- 18 -- S C iss Input Capacitance -- 4900 -- C oss Output Capacitance-- 360 -- C rssReverse Transfer CapacitanceV GS = 0V V DS = 25Vf = 1.0MHz -- 38 --pFResistive Switching Characteristics RatingSymbol Parameter Test ConditionsMin. Typ. Max.Unitst d(ON) Turn-on Delay Time -- 20 -- tr Rise Time-- 28 -- t d(OFF) Turn-Off Delay Time -- 90 -- t f Fall Time I D =10A V DD =200V V GS = 10V R G =4.7Ω-- 46 -- nsQ g Total Gate Charge -- 95 Q gs Gate to Source Charge -- 18 -- Q gd Gate to Drain (“Miller”)ChargeI D =20A V DD =300VV GS = 10V-- 38 --nCWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 3 o f 10 2011○R Huajing Discrete DevicesCS20N60AND Source-Drain Diode Characteristics RatingSymbol Parameter Test ConditionsMin. Typ. Max.UnitsI S Continuous Source Current (Body Diode) -- -- 20 A I SM Maximum Pulsed Current (Body Diode)-- -- 80 A V SD Diode Forward Voltage I S =20A,V GS =0V -- -- 1.5 V trr Reverse Recovery Time -- 658 nsQrrReverse Recovery ChargeI S =20A,T j = 25°C dI F /dt=100A/us,V GS =0V-- 7.4µCPulse width tp ≤380µs,δ≤2%Symbol Parameter Typ. UnitsR θJC Junction-to-Case 0.45 ℃/W R θJAJunction-to-Ambient40℃/WGate-source Zener diode RatingSymbolParameter Test ConditionsMin.Typ. Max.UnitsV GSOGate-source breakdown voltageI GS = ±1mA(Open Drain)30 VThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’sESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.a1：Repetitive rating; pulse width limited by maximum junction temperature a2：L=10.0mH, I D =17.3A, Start T J =25℃ a3：I SD =20A,di/dt ≤100A/us,V DD ≤BV DS, Start T J =25℃WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 4 o f102011○R Huajing Discrete DevicesCS20N60AND Characteristics Curve ：7540010025020030050100125150T C , C ase T em perature , CP D , P o w e r D i s s i p a t i o n ，W a t t sWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 5 o f 10 2011○R Huajing Discrete DevicesCS20N60ANDWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 6 o f 10 2011○R Huajing Discrete DevicesCS20N60ANDWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 7 o f 10 2011○R Huajing Discrete DevicesCS20N60AND TestCircuitandWaveformWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 8 o f 10 2011○R Huajing Discrete DevicesCS20N60ANDWUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. P a g e 9 o f 10 2011○R Huajing Discrete DevicesCS20N60AND Package Information ：规范(mm)项 目MIN MAXA 15.10 15.90B19.30 20.30C 4.70 4.90D 1.90 2.10E 0.90 1.10F 0.50 0.70G1 2.00 2.20G2 3.00 3.20H 3.30 3.70I 2.70 2.90L 19.5 20.9N 5.25 5.653.10 3.30TO-3P(N) PackageP a g e 10 o f 102011○R Huajing Discrete DevicesCS20N60AND The name and content of poisonous and harmful material in productshazardous substancePart’s Name Pb Hg Cd Cr(VI) PBBPBDELimit ≤0.1% ≤0.1% ≤0.01% ≤0.1%≤0.1%≤0.1% Lead Frame ○ ○ ○ ○ ○ ○ Molding Compound○ ○ ○ ○ ○ ○ Chip ○ ○ ○ ○ ○ ○ Wire Bonding○○ ○ ○ ○ ○ Solder ×○○○○○Note○：means the hazardous material is under the criterion of SJ/T11363-2006.×：means the hazardous material exceeds the criterion of SJ/T11363-2006. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup’s ROHS.Warnings1. Exceeding the maximun ratings of the device in performance may cause damage to the device,even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device.2. When installing the heatsink, please pay attention to the torsional moment and the smoothnessof the heatsink.3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect the device frombeing damaged by the static electricity when using it.4. This publication is made by Huajing Microelectronics and subject to regular change without notice.。

SPA20N60C3

SPA20N60C3

Cool MOS™ Power TransistorV DS @ T jmax 650V R DS(on)0.19ΩI D20.7AFeature•• Worldwide best R DS(on) in TO 220• Ultra low gate charge• Periodic avalanche rated • Extreme d v /d t rated• High peak current capability • Improved transconductance• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)Marking 20N60C320N60C320N60C320N60C3TypePackage Ordering Code SPP20N60C3P-TO220-3-1Q67040-S4398SPB20N60C3P-TO263-3-2Q67040-S4397SPI20N60C3P-TO262-3-1Q67040-S4550SPA20N60C3P-TO220-3-31Q67040-S4410Maximum Ratings ParameterSymbol ValueUnit SPA Continuous drain currentT C = 25 °C T C = 100 °CI D20.713.120.71)13.11)APulsed drain current, t p limited by T jmax I D puls 62.162.1A Avalanche energy, single pulseI D =10A, V DD =50VE AS 690690mJAvalanche energy, repetitive t AR limited by T jmax 2)I D =20A, V DD =50VE AR 11Avalanche current, repetitive t AR limited by T jmax I AR 2020A Gate source voltage staticV GS±20±20VGate source voltage AC (f >1Hz)V GS ±30±30Power dissipation, T C = 25°C P tot 20834.5W SPP_B SPP_B_IOperating and storage temperature T j , T st g -55...+150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 480 V, I D = 20.7 A, T j = 125 °Cd v/d t50V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC --0.6K/W Thermal resistance, junction - case, FullPAK R thJC_FP-- 3.6 Thermal resistance, junction - ambient, leaded R thJA--62 Thermal resistance, junction - ambient, FullPAK R thJA_FP--80SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 3)R thJA---3562-Soldering temperature,1.6 mm (0.063 in.) from case for 10s4)T sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=20A-700-Gate threshold voltage V GS(th)I D=1000µA, V GS=V DS 2.13 3.9Zero gate voltage drain current I DSS V DS=600V, V GS=0V,T j=25°C T j=150°C --0.1-1100µAGate-source leakage current I GSS V GS=30V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=13.1AT j=25°C T j=150°C --0.160.430.19-ΩGate input resistance R G f=1MHz, open drain-0.54-Electrical Characteristics Parameter Symbol ConditionsValues Unit min.typ.max.Transconductance g fs V DS ≥2*I D *R DS(on)max , I D =13.1A-17.5-S Input capacitance C iss V GS =0V, V DS =25V, f =1MHz-2400-pFOutput capacitanceC oss -780-Reverse transfer capacitanceC rss-50-Effective output capacitance,5)energy relatedC o(er)V GS =0V, V DS =0V to 480V-83-Effective output capacitance,6)time related C o(tr)-160-Turn-on delay timet d(on)V DD =380V, V GS =0/13V, I D =20.7A, R G =3.6Ω, T j =125-10-nsRise timet r V DD =380V, V GS =0/13V, I D =20.7A, R G =3.6Ω-5-Turn-off delay time t d(off)-67100Fall timet f -4.512Gate Charge Characteristics Gate to source charge Q gs V DD =480V, I D =20.7A-11-nCGate to drain charge Q gd -33-Gate charge total Q gV DD =480V, I D =20.7A, V GS =0 to 10V-87114Gate plateau voltageV (plateau)V DD =480V, I D =20.7A-5.5-V1Limited only by maximum temperature2Repetitve avalanche causes additional power losses that can be calculated as P AV =E AR *f .3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.4Soldering temperature for TO-263: 220°C, reflow 5C o(er)is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% V DSS .6C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS .Electrical CharacteristicsParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C--20.7AInverse diode direct current,pulsedI SM--62.1 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=480V, I F=I S ,d i F/d t=100A/µs -500800nsReverse recovery charge Q rr-11-µC Peak reverse recovery current I rrm-70-A Peak rate of fall of reverserecovery currentdi rr/dt T j=25°C-1400-A/µs1 Power dissipation P tot = f (T C)Ptot2 Power dissipation FullPAKP tot = f (T C)Ptot3 Safe operating areaI D = f ( V DS )parameter : D= 0 , T C=25°C3ID4 Safe operating area FullPAKI D = f (V DS)parameter: D = 0, TC = 25°C3ID5 Transient thermal impedance Z thJC = f (t p )parameter: D = t p /T10 10 10 10 10 K/W Z t h J C6 Transient thermal impedance FullPAK Z thJC = f (t p )parameter: D = t p /t110 10 10 10 10 K/WZ t h JC7 Typ. output characteristic I D = f (V DS ); T j =25°C parameter: t p = 10 µs, V GSI DI D = f (V DS ); T j =150°C parameter: t p = 10 µs, V GSI D9 Typ. drain-source on resistance R DS(on)=f(I D)parameter: T j=150°C, V GSRDS(on)10 Drain-source on-state resistanceR DS(on) = f (T j)parameter : I D = 13.1 A, V GS = 10 VSPP20N60C3RDS(on)I D= f ( V GS ); V DS≥ 2 x I D x R DS(on)maxparameter: t p = 10 µsIDV GS= f (Q Gate)parameter: I D = 20.7 A pulsedSPP20N60C3VGS13 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF14 Typ. switching timet = f (I D), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, R G=3.6Ω15 Typ. switching timet = f (R G), inductive load, T j=125°Cpar.: V DS=380V, V GS=0/+13V, I D=20.7 Ad i/d t = f(R G), inductive load, T j = 125°Cpar.: V DS=380V, V GS=0/+13V, I D=20.7AA/µsdi/dt17 Typ. drain source voltage sloped v/d t = f(R G), inductive load, T j = 125°C par.: V DS=380V, V GS=0/+13V, I D=20.7AV/nsdv/dt18 Typ. switching lossesE = f (I D), inductive load, T j=125°Cpar.: VDS=380V, V GS=0/+13V, R G=3.6ΩmWsE19 Typ. switching lossesE = f(R G), inductive load, T j=125°Cpar.: V DS=380V,V GS=0/+13V, I D=20.7AmWsEI AR = f (t AR)par.: T j≤ 150 °C4IAR21 Avalanche energyE AS = f (T j)par.: I D = 10 A, V DD = 50 VE23 Avalanche power lossesP AR = f (f )parameter: E AR=1mJ6PAR22 Drain-source breakdown voltageV(BR)DSS = f(T j)SPP20N60C3V(BR)DSSC = f (V DS)parameter:V GS=0V, f=1 MHz25 Typ. C oss stored energy E oss =f (V DS )E Definition of diodes switching characteristicsP-TO-220-3-1All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3P-TO-263-3-2 (D2-PAK)P-TO-262-3-1 (I 2-PAK)Typical1)Metal surface min. X = 7.25, Y = 6.9All metal surfaces tin plated, except area of cut.P-TO-220-3-31 (FullPAK)Please refer to mounting instructions (application note AN-TO220-3-31-01)Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).。