FQD5N60C
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FQD5N60C / FQU5N60C
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C)
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 1.4 A
-- 2.0 2.5
Ω
VDS = 40 V, ID = 1.4 A
(Note 4) --
4.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Rev. A, October 2003
FQD5N60C / FQU5N60C
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 4.5A, RG = 25 Ω
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
--
--
--
--
--
--
1 10 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 515 670
pF
-- 55
72
pF
-- 6.5 8.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
- Derorage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD5N60C / FQU5N60C 600 2.8 1.8 11.2 ± 30 210 2.8 4.9 4.5 2.5 49 0.39
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 4.5A
-- 10
30
ns
-- 42
90
ns
-- 38
85
ns
(Note 4, 5)
--
46 100
ns
VDS = 480 V, ID = 4.5A,
-- 15
19
nC
VGS = 10 V
-- 2.5
--
nC
(Note 4, 5) --
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
D
D
!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
●
◀▲
● ●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
Features
• 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
11.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
-
2.56
°C/W
-
50
°C/W
-
110
°C/W
©2003 Fairchild Semiconductor Corporation
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
ID, Drain Current [A]
101 150oC
100
25oC
-55oC
10-1 2
※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test
FQD5N60C / FQU5N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C)
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 1.4 A
-- 2.0 2.5
Ω
VDS = 40 V, ID = 1.4 A
(Note 4) --
4.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Rev. A, October 2003
FQD5N60C / FQU5N60C
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 4.5A, RG = 25 Ω
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
--
--
--
--
--
--
1 10 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 515 670
pF
-- 55
72
pF
-- 6.5 8.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
- Derorage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD5N60C / FQU5N60C 600 2.8 1.8 11.2 ± 30 210 2.8 4.9 4.5 2.5 49 0.39
12
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
※ Note : ID = 4.5A
-- 10
30
ns
-- 42
90
ns
-- 38
85
ns
(Note 4, 5)
--
46 100
ns
VDS = 480 V, ID = 4.5A,
-- 15
19
nC
VGS = 10 V
-- 2.5
--
nC
(Note 4, 5) --
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
D
D
!
D-PAK
G S FQD Series
GDS
I-PAK
FQU Series
G!
●
◀▲
● ●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
-55 to +150
300
Units V A A A V mJ A mJ
V/ns W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient*
Features
• 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V • Low gate charge ( typical 15 nC) • Low Crss ( typical 6.5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
11.2
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ
Max
Units
-
2.56
°C/W
-
50
°C/W
-
110
°C/W
©2003 Fairchild Semiconductor Corporation
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
ID, Drain Current [A]
101 150oC
100
25oC
-55oC
10-1 2
※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test
