1891137中文资料

4
5
6
7
12 11 10 9
VCC = PIN 16 GND = PIN 8
4
5
6
7
12
11
10
9
O0a
O1a
O2a
O3a
O0b
O1b
O2b
ቤተ መጻሕፍቲ ባይዱ
O3b
FAST AND LS TTL DATA 5-235
元器件交易网
SN54/74LS139
FUNCTIONAL DESCRIPTION The LS139 is a high speed dual 1-of-4 decoder/demultiplexer fabricated with the Schottky barrier diode process. The device has two independent decoders, each of which accept two binary weighted inputs (A0, A1) and provide four mutually exclusive active LOW outputs (O0 – O3). Each decoder has an active LOW Enable (E). When E is HIGH all outputs are forced HIGH. The enable can be used as the data input for a 4-output demultiplexer application. Each half of the LS139 generates all four minterms of two variables. These four minterms are useful in some applications, replacing multiple gate functions as shown in Fig. a, and thereby reducing the number of packages required in a logic network.

0.25
0.4
II
最大输入电压时输入电流
VCC = Max, VI = 7V
-
-
0.1
mA
IIH
输入高电平电流
VCC = Max, VI = 2.7V
-
-
20
μA
IIL
输入低电平电流
VCC = Max, VI = 0.4V
-
-
-0.36
mA
IOS
输出短路电流
VCC = Max (Note 4)
-20
-
-100
mA
ICC
电源电流
VCC = Max (Note 5)
-
6号
参数
Fro (Input)
To (Output)
RL = 2 kW
单位
CL = 15 pF
CL = 50 pF
Min
Max
Min
Max
tPLH
低到高输出传递延迟时间
Select to Output
-
18
-
27
74LS139中文资料(功能,引脚,真值表及电气参数)
74LS139功能:
54/74LS139为2线－4线译码器,也可作数据分配器。
其主要电特性的典型值如下：
型号54LS139/74LS139
传递延迟时间22ns功耗34mW
当选通端（G1）为高电平，可将地址端（A、B）的二进制编码在一个对应的输出端以低电平译出。
ns
tPHL
高到低输出传递延迟时间
Select to Output
-
27
-
40
ns
tPLH
低到高输出传递延迟时间

100371中⽂资料100371Low Power Triple 4-Input Multiplexer with EnableGeneral DescriptionThe 100371contains three 4-input multiplexers which share a common decoder (inputs S 0and S 1).Output buffer gates provide true and complement outputs.A HIGH on the Enable input (E)forces all true outputs LOW (see Truth Table).All in-puts have 50k ?pull-down resistors.Featuresn 35%power reduction of the 100171n 2000V ESD protectionn Pin/function compatible with 100171n Voltage compensated operating range =?4.2V to ?5.7V nAvailable to MIL-STD-883Logic SymbolPin Names DescriptionI 0x –I 3x Data Inputs S 0,S 1Select InputsE Enable Input (Active LOW)Z a –Z c Data OutputsZ a –Z cComplementary Data OutputsDS100975-1September 1998100371Low Power Triple 4-Input Multiplexer with Enable1998National Semiconductor Corporation /doc/8316005118.htmlConnection DiagramsLogic Diagram24-Pin DIPDS100975-224-Pin Quad CerpakDS100975-3DS100975-5/doc/8316005118.html2Truth TableInputs OutputsE S0S1Z nL L L I0xL H L I1xL L H I2xL H H I3xH X X LH=HIGH Voltage LevelL=LOW Voltage LevelX=Don’t Care3/doc/8316005118.htmlAbsolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Storage Temperature (T STG )65C to +150C Maximum Junction Temperature (T J )Ceramic+175?CV EE Pin Potential to Ground Pin ?7.0V to +0.5V Input Voltage (DC)V EE to +0.5VOutput current (DC Output HIGH)?50mA ESD (Note 2)≥2000VRecommended Operating ConditionsCase Temperature (T C )Military55C to +125C Supply Voltage (V EE )5.7V to 4.2VNote 1:Absolute maximum ratings are those values beyond which the de-vice may be damaged or have its useful life impaired.Functional operation under these conditions is not implied.Note 2:ESD testing conforms to MIL-STD-883,Method 3015.Military VersionDC Electrical CharacteristicsV EE =?4.2V to ?5.7V,V CC =V CCA =GND,T C =?55?C to +125?C Symbol Parameter Min Max Units T C Conditions NotesV OHOutput HIGH Voltage1025870mV 0C to (Notes 3,4,5)+125?C ?1085870mV 55C V IN =V (Max)Loading with V OLOutput LOW Voltage18301620mV 0C to or V IL (Min)50?to ?2.0V+125?C ?18301555mV ?55?C V OHCOutput HIGH Voltage1035mV 0C to (Notes 3,4,5)+125?C ?1085mV ?55?C V IN =V IH (Min)Loading with V OLCOutput LOW Voltage1610mV 0C to or V IL (Max)50?to ?2.0V+125?C ?1555mV ?55?C V IH Input HIGH Voltage ?1165?870mV ?55?C to Guaranteed HIGH Signal (Notes 3,4, 5,6)+125?C for All InputsV IL Input LOW Voltage ?1830?1475mV ?55?C to Guaranteed LOW Signal (Notes 3,4,5,6)+125?C for All Inputs I IL Input LOW Current 0.50µA55C to V EE =4.2V (Notes 3,4,5)+125?CV IN =V IL (Min)I IHInput HIGH Current(Notes 3,4,5)I 0X –I 3X 340µA0?C to S 0,S 1,E 300+125?C V EE =?5.7V I 0X –I 3X 490µA ?55?CV IN =V IH (Max)S 0,S 1,E450I EEPower Supply Current8030mA55C to Inputs Open(Notes 3,4,5)+125?CNote 3:F100K 300Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals ?55?C),then testing immediately without allowing for the junction temperature to stabilize due to heat dissapation after power-up.This provides “cold start”specs which can be considered a worst case condition at cold temperatures.Note 4:Screen tested 100%on each device at ?55?C,+25?C,and +125?C,Subgroups 1,2,3,7,and 8.Note 5:Sample tested (Method 5005,Table I)on each manufactured lot at ?55?C,+25?C,and +125?C,Subgroups 1,2,3,7,and 8.Note 6:Guaranteed by applying specified input condition and testing V OH /V OL ./doc/8316005118.html4Military VersionAC Electrical CharacteristicsV EE =?4.2V to ?5.7V,V CC =V CCA =GND Symbol ParameterT C =?55?C T C =+25?C T C =+125?C UnitsConditionsNotesMin Max Min Max Min Max t PLH Propagation Delay 0.101.900.201.700.202.00ns(Notes 7,8,9,11)t PHL I 0x –I 3x to Output t PLH Propagation Delay 0.402.700.602.400.502.90nst PHL S 0,S 1to Output Figures 1,2t PLH Propagation Delay 0.502.700.602.400.502.90nst PHL E to Output t TLH Transition Time0.201.600.301.500.201.60ns(Note 10)t THL20%to 80%,80%to 20%Note 7:F100K 300Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals ?55?C),then testing immediately after power-up.This provides “cold start”specs which can be considered a worst case condition at cold temperatures.Note 8:Screen tested 100%on each device at +25?C temperature only,Subgroup A9. Note 9:Sample tested (Method 5005,Table I)on each mfg.lot at +25?C,Subgroup A9,and at +125?C and ?55?C temperatures,Subgroups A10and A11.Note 10:Not tested at +25?C,+125?C and ?55?C temperature (design characterization data).Note 11:The propagation delay specified is for single output switching.Delays may vary up to 300ps with multiple outputs switching.Test CircuitryDS100975-6Notes:V CC ,V CCA =+2V,V EE =?2.5VL1and L2=equal length 50?impedance lines R T =50?terminator internal to scopeDecoupling 0.1µF from GND to V CC and V EE All unused outputs are loaded with 50?to GND C L =Fixture and stray capacitance ≤3pFPin numbers shown are for flatpak;for DIP see logic symbolFIGURE 1.AC Test Circuit/doc/8316005118.html5Switching WaveformsDS100975-7FIGURE2.Propagation Delay and Transition Times /doc/8316005118.html6Physical Dimensions inches(millimeters)unless otherwise noted24-Lead Ceramic Dual-In-Line Package(D)Package Number J24E24-Lead Ceramic Flatpak(F)Package Number W24B7/doc/8316005118.htmlLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE-VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI-CONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or sys-tems which,(a)are intended for surgical implant intothe body,or (b)support or sustain life,and whose fail-ure to perform when properly used in accordancewith instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component in any component of a life support device or system whose failure to perform can be rea-sonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@/doc/8316005118.html/doc/8316005118.htmlNational Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@/doc/8316005118.htmlDeutsch Tel:+49(0)180-5308585English Tel:+49(0)180-5327832Fran?ais Tel:+49(0)180-5329358Italiano Tel:+49(0)180-5341680National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:sea.support@/doc/8316005118.htmlNational Semiconductor Japan Ltd.Tel:81-3-5620-6175Fax:81-3-5620-6179100371L o w P o w e r T r i p l e 4-I n p u t M u l t i p l e x e r w i t h E n a b l eNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。

0.4
0
0
0.4
0.8
1.2
IT(RMS) (A)
=导通角
图 1.最大导通状态功耗为 通态电流有效值功能 ;典型值 .
10 ITSM
(A) 8
6
4
2
0
1
10
10
10
n
周期在f = 50赫兹N =数
图 2.最大允许非重复性峰值通态电流为周期正 弦电流数函数 ;典型值 .
10 ITSM (A)
10
IT/δt limit
断态泄漏电流
崛起临界率 断态电压
Z0103MA/MN/NA/NN Z0107MA/MN/NA/NN Z0109MA/MN/NA/NN
变化临界速度 整流电压
Z0103MA/MN/NA/NN Z0107MA/MN/NA/NN Z0109MA/MN/NA/NN
条件
VD = 12 V; R L = 30 ; T2+ G+; T2+ G−; T2− G−; 图9
芯片中文手册,看全文,戳
Z0103/07/09系列
双向可控硅
修订02 - 2002年9月12日
产品数据
1.产品简介
1.1简介
钝化三端双向可控硅在常规和表面安装封装.在需要高双向瞬态和阻断电压能力应 用程序供使用. 可在一个范围内栅电流灵敏度,以获得最佳性能.
产品可用性：
Z0103MA; Z0103NA; Z0107MA; Z0107NA; Z0109MA; Z0109NA在SOT54B Z0103MN; Z0103NN; Z0107MN; Z0107NN; Z0109MN; Z0109NN在SOT2​23.
j = 25 °C 前激增;