AP3302H

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge
BV DSS 25V ▼ Simple Drive Requirement R DS(ON)50m
Ω▼ Fast Switching
I D
16A
Description
Absolute Maximum Ratings
Symbol Units V DS V V GS
V I D @T C =25℃A I D @T C =100℃A I DM
A P D @T C =25℃W W/℃T STG ℃T J

Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 6.4℃/W Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200701031
Thermal Data
Parameter
Pulsed Drain Current 125Operating Junction Temperature Range
-55 to 150
Linear Derating Factor 0.16Storage Temperature Range
Total Power Dissipation 20-55 to 150Continuous Drain Current, V GS @ 10V 16Continuous Drain Current, V GS @ 10V 10Drain-Source Voltage 25Gate-Source Voltage
AP3302H/J
Parameter
Rating The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3302J) is available for low-profile applications.
± 20G
D
S
TO-251(J)
G D S
TO-252(H)
Electrical Characteristics@T j =25o C(unless otherwise specified)
Symbol Parameter
Test Conditions
Min.Typ.Max.
Units BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA 25--V R DS(ON)Static Drain-Source On-Resistance 2V GS =10V, I D =8A --50m ΩV GS(th)Gate Threshold Voltage
V DS =V GS , I D =250uA 2-4V I DSS Drain-Source Leakage Current (T j =25o C)V DS =25V, V GS =0V --1uA Drain-Source Leakage Current (T j =150o C)
V DS =20V, V GS =0V --25uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =10A -7.413nC Q gs Gate-Source Charge V DS = 20V - 2.2-nC Q gd Gate-Drain ("Miller") Charge V GS =10V - 4.2-nC t d(on)Turn-on Delay Time 2V DS =15V -8-ns t r Rise Time
I D =16A
-7.4-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =10V -11-ns t f Fall Time R D =0.94Ω-3-ns C iss Input Capacitance V GS =0V -164290pF C oss Output Capacitance
V DS =25V -158-pF C rss
Reverse Transfer Capacitance
f=1.0MHz
-
62
-pF
Source-Drain Diode
Symbol Parameter
Test Conditions
Min.Typ.Max.Units V SD
Forward On Voltage 2I S =16A, V GS =0V -- 1.3V t rr
Reverse Recovery Time I S =16A, V GS =0V ,-29-ns Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-21
-nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP3302H/J
± 20V ±100
AP3302H/J
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP3302H/J
Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform。