STW15NK90Z中文资料

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1/9April 2004STW15NK90ZN-CHANNEL 900V -0.40Ω -15A TO-247Zener-Protected SuperMESH™MOSFETs TYPICAL R DS (on)=0.40Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTED s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sVERY GOOD MANUFACTURING REPEATIBILITYDESCRIPTIONThe SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout.In addition topushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST fullrange of high voltage MOSFET s in-cluding revolutionary MDmesh™products.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIESORDERING INFORMATIONTYPE V DSS R DS(on)I D Pw STW15NK90Z900V<0.55Ω15A350WSALES TYPE MARKING PACKAGE PACKAGINGSTW15NK90ZW15NK90ZTO-247TUBESTW15NK90Z2/9ABSOLUTE MAXIMUM RATINGS( )Pulse width limited by safe operating area(1)I SD ≤15A,di/dt ≤ 200A/µs,V DD ≤900V ,T j ≤T JMAX.(*)Limited only by maximum temperature allowedTHERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device ’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ’s integrity.These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)900V V DGR Drain-gate Voltage (R GS =20k Ω)900V V GS Gate-source Voltage±30V I D Drain Current (continuous)at T C =25°C 15A I D Drain Current (continuous)at T C =100°C 9.5A I DM ( )Drain Current (pulsed)60A P TOT Total Dissipation at T C =25°C 350W Derating Factor2.77W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K Ω)6000V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns T j T stgOperating Junction Temperature Storage Temperature-55to 150°CRthj-case Thermal Resistance Junction-case Max0.36°C/W Rthj-ambT lThermal Resistance Junction-ambient MaxMaximum Lead Temperature For Soldering Purpose50300°C/W °CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)15A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =50V)360mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=±1mA (Open Drain)30V3/9STW15NK90ZELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =1mA,V GS =0900V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max RatingV DS =Max Rating,T C =125°C 150µA µA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V±10µA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =150µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =7.5A0.400.55ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS =15V ,I D =7.5A15S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0610046596pF pF pF C oss eq.(3)Equivalent Output Capacitance V GS =0V,V DS =0V to 720V 230pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off Delay Time Fall TimeV DD =450V,I D =7.5A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)422713535ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD =720V,I D =15A,V GS =10V1905670256nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)1560A A V SD (1)Forward On Voltage I SD =15A,V GS =0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =15A,di/dt =100A/µs V DD =100V,T j =25°C (see test circuit,Figure 5)74810.528ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =15A,di/dt =100A/µs V DD =100V,T j =150°C (see test circuit,Figure 5)9001328.5ns µC ASTW15NK90Z4/9TransconductanceSafe Operating Area5/9STW15NK90ZNormalized BVDSS vsTemperatureSource-drain Diode Forward CharacteristicsSTW15NK90Z6/9Maximum Avalanche Energy vsTemperature7/9STW15NK90ZFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTW15NK90Z8/9STW15NK90Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.9/9。