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STD15N06L中文资料

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STD15N06LN -CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORs TYPICAL R DS(on)=0.075Ωs AVALANCHE RUGGED TECHNOLOGY s 100%AVALANCHE TESTEDs REPETITIVE AVALANCHE DATA AT 100o C s LOW GATE CHARGEs HIGH CURRENT CAPABILITYs 175o C OPERATING TEMPERATURE sAPPLICATION ORIENTED CHARACTERIZATIONsTHROUGH-HOLE IPAK (TO-251)POWER PACKAGE IN TUBE (SUFFIX ”-1”)sSURFACE-MOUNTING DPAK (TO-252)POWER PACKAGE IN TAPE &REEL (SUFFIX ”T4”)APPLICATIONS s HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC &DC-AC CONVERTERS s MOTOR CONTROL,AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)INTERNAL SCHEMATIC DIAGRAMTYPE V DSS R DS(on)I D STD15N06L60V<0.1Ω15AFebruary 1995ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V D S Drain-source Voltage (V GS =0)60V V DG R Drain-gate Voltage (R GS =20k Ω)60V V GS Gate-source Voltage±15V I D Drain Current (continuous)at T c =25o C 15A I D Drain Current (continuous)at T c =100o C 10A I D M (•)Drain Current (pulsed)60A P tot Total Dissipation at T c =25o C 50W Derating Factor 0.33W/o CT stg Storage Temperature-65to 175o C T jMax.Operating Junction Temperature175oC(•)Pulse width limited by safe operating area132IPAK TO-251(Suffix ”-1”)13DPAK TO-252(Suffix ”T4”)1/10THERMAL DATAR thj-cas e R thj-amb R t hc-sin kT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose31001.5275o C/Wo C/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI A R Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max,δ <1%)15AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V D D=25V)50mJE AR Repetitive Avalanche Energy(pulse width limited by T j max,δ <1%)12mJI A R Avalanche Current,Repetitive or Not-Repetitive(T c=100o C,pulse width limited by T j max,δ <1%)10AELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V G S=060VI DS S Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating x0.8T c=125o C2501000µAµAI G SS Gate-body LeakageCurrent(V D S=0)V GS=±15V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V G S(th)Gate Threshold Voltage V DS=V GS I D=250µA1 1.7 2.5VR DS(on)Static Drain-source OnResistance V GS=5V I D=7.5AV GS=5V I D=7.5A T c=100o C0.0750.10.2ΩΩI D(on)On State Drain Current V DS>I D(on)x R D S(on)maxV GS=10V15A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg fs(∗)ForwardTransconductanceV DS>I D(on)x R D S(on)max I D=7.5A35SC iss C oss C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V G S=070023080950310110pFpFpFSTD15N06L 2/10ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=30V I D=7.5AR G=4.7ΩV GS=5V(see test circuit figure)1516060200nsns(di/dt)on Turn-on Current Slope V DD=40V I D=15AR G=47 ΩV GS=5V(see test circuit figure)70A/µsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=40V I D=15A V GS=5V188930nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Vof f) t ft c Off-voltage Rise TimeFall TimeCross-over TimeV DD=48V I D=15AR GS=47ΩV GS=10V(see test circuit figure)5210017080140240nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI S D I SDM(•)Source-drain CurrentSource-drain Current(pulsed)1560AAV S D(∗)Forward On Voltage I SD=15A V G S=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=15A di/dt=100A/µsV DD=25V T j=150o C600.145nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceSTD15N06L3/10Derating CurveTransfer CharacteristicsStatic Drain-source On Resistance Output Characteristics TransconductanceGate Charge vs Gate-source VoltageSTD15N06L 4/10STD15N06L Capacitance Variations Normalized Gate Threshold Voltage vsTemperatureNormalized On Resistance vs Temperature Turn-on Current SlopeCross-over TimeTurn-off Drain-source Voltage Slope5/10STD15N06LSwitching Safe Operating Area Accidental Overload AreaSource-drain Diode Forward CharacteristicsFig.1:Unclamped Inductive Load Test Circuits Fig.2:Unclamped Inductive Waveforms 6/10Fig.4:Gate Charge Test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.3:Switching Times Test Circuits For Resistive LoadSTD15N06L7/10DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 2.2 2.40.0860.094A10.9 1.10.0350.043A30.7 1.30.0270.051B 0.640.90.0250.031B2 5.25.40.2040.212B30.850.033B50.30.012B60.950.037C 0.450.60.0170.023C20.480.60.0190.023D 6 6.20.2360.244E 6.4 6.60.2520.260G 4.4 4.60.1730.181H 15.916.30.6260.641L 99.40.3540.370L10.81.20.0310.047L20.810.0310.039DAC 2CLA 3L2L113H==B 3BB 6B 2EGA 1====B 52TO-251(IPAK)MECHANICAL DATA0068771-ESTD15N06L8/10DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 2.2 2.40.0860.094A10.9 1.10.0350.043A20.030.230.0010.009B 0.640.90.0250.035B2 5.2 5.40.2040.212C 0.450.60.0170.023C20.480.60.0190.023D 6 6.20.2360.244E 6.4 6.60.2520.260G 4.4 4.60.1730.181H 9.3510.10.3680.397L20.80.031L40.610.0230.039AC 2CHA 1A 2==DL2L413==BE==B 2G2DETAIL ”A”DETAIL ”A”TO-252(DPAK)MECHANICAL DATA0068772-BSTD15N06L9/10STD15N06LInformation furnished is believed to be accurate and reliable.However,SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use.No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.©1994SGS-THOMSON Microelectronics-All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia-Brazil-France-Germany-Hong Kong-Italy-Japan-Korea-Malaysia-Malta-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A10/10。

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MLD1N06CL资料

MLD1N06CL资料

Designer's™Data SheetSMARTDISCRETES™Internally Clamped, Current LimitedN–Channel Logic Level Power MOSFETThe MLD1N06CL is designed for applications that require a rugged power switchingdevice with short circuit protection that can be directly interfaced to a microcontrol unit(MCU). Ideal applications include automotive fuel injector driver, incandescent lampdriver or other applications where a high in–rush current or a shorted load condition couldoccur.This logic level power MOSFET features current limiting for short circuit protection,integrated Gate–Source clamping for ESD protection and integral Gate–Drain clampingfor over–voltage protection and Sensefet technology for low on–resistance. No additionalgate series resistance is required when interfacing to the output of a MCU, but a 40 kΩgate pulldown resistor is recommended to avoid a floating gate condition.The internal Gate–Source and Gate–Drain clamps allow the device to be appliedwithout use of external transient suppression components. The Gate–Source clampprotects the MOSFET input from electrostatic voltage stress up to 2.0 kV. TheGate–Drain clamp protects the MOSFET drain from the avalanche stress that occurswith inductive loads. Their unique design provides voltage clamping that is essentiallyindependent of operating temperature.The MLD1N06CL is fabricated using Motorola’s SMARTDISCRETES™ technology whichcombines the advantages of a power MOSFET output device with the on–chip protectivecircuitry that can be obtained from a standard MOSFET process. This approach offers aneconomical means of providing protection to power MOSFET s from harsh automotive andindustrial environments. SMARTDISCRETES™ devices are specified over a wide tempera-ture range from –50°C to 150°C.MAXIMUM RATINGS (T = 25°C unless otherwise noted)THERMAL CHARACTERISTICSUNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICSSMARTDISCRETES is a trademark of Motorola, Inc.Designer’s Data for “Worst Case” Conditions—The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves—representing boundaries on device characteristics—are given to facilitate “worst case” design.Preferred devices are Motorola recommended choices for future use and best overall value.Order this documentby MLD1N06CL/D MOTOROLASEMICONDUCTOR TECHNICAL DATAMLD1N06CLMotorola Preferred DeviceVOLTAGE CLAMPEDCURRENT LIMITINGMOSFET62 VOLTS (CLAMPED)R DS(on) = 0.75 OHMS元器件交易网。

TS15P06G中文资料

TS15P06G中文资料

元器件交易网
TS15P01G THRU TS15P07G
Single Phase 15.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts Current 15.0 Amperes
01G 02G 03G 04G
TS15P TS15P TS15P 05G 06G 07G
Units V V V A A V uA uA ℃/W ℃ ℃
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 15A Maximum DC Reverse Current @ TA=25℃ at Rated DC Blocking Voltage @ TA=125℃ Typical Thermal Resistance (Note) Operating Temperature Range Storage Temperature Range
300 200 100
AVERAGE FORWARD CURRENT. (A)
16.0
12.0
8.0
4.0 0
0
50 CASE TEMPERATURE. ( C)
astma106标准中文对照表

astma106标准中文对照表

astma106标准中文对照表全文共四篇示例，供读者参考第一篇示例：ASTM A106标准是美国材料测试和标准组织（ASTM）发布的钢管标准。

这个标准涵盖了无缝碳钢管的生产和用途要求，适用于一系列高温和高压的应用。

ASTM A106标准中文对照表是为了帮助人们更好地理解和使用这一标准而制作的。

下面将详细介绍ASTM A106标准中文对照表的内容。

ASTM A106标准中文对照表主要包括以下内容：管子材质、尺寸、化学成分、机械性能、温度范围、试验要求、包装等方面的信息。

在这个对照表中，每一项内容都有相应的中文翻译，便于用户查阅和理解。

下面将对每一项内容进行详细说明。

管子材质：ASTM A106标准规定了管子的材质为碳素钢，具体包括A、B、C三个等级。

A级管子是最常用的无缝碳素钢管，B级和C级管子分别具有一定的化学成分和机械性能要求。

尺寸：ASTM A106标准规定了管子的外径、壁厚和长度等尺寸要求，以确保管子的准确度和适用性。

化学成分：ASTM A106标准对管子的化学成分进行了详细的规定，包括碳含量、硫含量、磷含量等元素的限值，以确保管子具有良好的耐腐蚀和机械性能。

机械性能：ASTM A106标准中规定了管子的机械性能指标，包括抗拉强度、屈服强度、伸长率等参数，以确保管子在高温和高压条件下能够稳定运行。

试验要求：ASTM A106标准详细规定了管子的试验要求，包括化学分析、拉伸试验、冲击试验等内容，以确保管子的质量符合标准要求。

包装：ASTM A106标准中还规定了管子的包装要求，包括包装方式、标识、运输等内容，以确保管子在运输和存储过程中不受到损坏。

ASTM A106标准中文对照表是一份非常重要的参考资料，它帮助人们更好地理解和应用ASTM A106标准，促进了无缝碳素钢管的生产和使用。

希望这份对照表能够对您有所帮助，谢谢阅读！第二篇示例：ASTM A106标准是美国材料与试验协会（ASTM）制定的一项针对碳素钢管材的标准。

15NiMn6钢板化学成分及冲击性能说明

15NiMn6钢板化学成分及冲击性能说明

15NiMn6钢板化学成分及冲击性能说明
一、15NiMn6钢板简介：
15NiMn6是承压设备用镍合金钢板,15NiMn6执行标准：EN10028-4：2009。

二、15NiMn6尺寸、外形、重量及允许偏差
2.1、钢板的尺寸、外形及允许偏差应符合EN10028-1中2007+A1：2009的要求。

三、15NiMn6交货状态
3.1、15NiMn6钢板通常以正火、正火加回火、调质状态交货。

3.2、钢板应以剪切或用火焰切割交货
四、15NiMn6化学成分
15NiMn6钢的化学成分（熔炼分析）应符合下表的规定（％）：15NiMn6化学成分要求
不经需方同意，本表中未列的元素不应有意添加到钢中，完成熔炼除外，在炼钢过程中，应采取所有适当措施防止从废钢和其他材料中添加这些元素，这些元素可对钢的力学性能和使用性能产生有害影响。

其中：Cr+Cu+Mo≤0.5
五、15NiMn6机械性能
15NiMn6的力学性能和工艺性能能应符合下表规定：
15NiMn6力学性能要求（适用于横向）
七、15NiMn6冲击功值。