MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant•AEC−Q101 Qualified and PPAP Capable•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change RequirementsMAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO40Vdc Collector−Base Voltage V CBO60Vdc Emitter−Base Voltage V EBO 6.0Vdc Collector Current − Continuous I C600mAdc Collector Current − Peak I CM900mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) @T A = 25°CDerate above 25°C PD2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate (Note 2) @T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*Transient pulses must not cause the junction temperature to be exceeded.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23 (TO−236)CASE 318STYLE 6COLLECTOR12EMITTER*Date Code orientation and/or overbar mayvary depending upon manufacturing location.12X M GG2X= Specific Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMDevice Package Shipping†ORDERING INFORMATIONMMBT4401LT3G SOT−23(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.MMBT4401LT1GSMMBT4401LT1GSOT−23(Pb−Free)3000 / Tape &Reel10,000 / Tape &ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (Note 3)(I C = 1.0 mAdc, I B = 0)V (BR)CEO 40−Vdc Collector −Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0)V (BR)CBO 60−Vdc Emitter −Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0)V (BR)EBO 6.0−Vdc Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc)I BEV −0.1m Adc Collector Cutoff Current(V CE = 35 Vdc, V EB = 0.4 Vdc)I CEX−0.1m AdcON CHARACTERISTICS (Note 3)DC Current Gain(I C = 0.1 mAdc, V CE = 1.0 Vdc)(I C = 1.0 mAdc, V CE = 1.0 Vdc)(I C = 10 mAdc, V CE = 1.0 Vdc)(I C = 150 mAdc, V CE = 1.0 Vdc)(I C = 500 mAdc, V CE = 2.0 Vdc)h FE20408010040−−−300−−Collector −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V CE(sat)−−0.40.75VdcBase −Emitter Saturation Voltage(I C = 150 mAdc, I B = 15 mAdc)(I C = 500 mAdc, I B = 50 mAdc)V BE(sat)0.75−0.951.2VdcSMALL −SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (I C = 20 mAdc, V CE = 10 Vdc, f = 100 MHz)f T 250−MHz Collector −Base Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C cb − 6.5pF Emitter −Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C eb −30pF Input Impedance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h ie 1.015k W Voltage Feedback Ratio (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h re 0.18.0X 10−4Small −Signal Current Gain (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h fe 40500−Output Admittance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe1.030m mhosSWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc,IC = 150 mAdc, I B1 = 15 mAdc)t d−15nsRise Time t r −20Storage Time (V CC = 30 Vdc, I C = 150 mAdc,I B1 = I B2 = 15 mAdc)t s −225nsFall Timet f−303.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.Figure 1. Turn −On Time Figure 2. Turn −Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUITSFigure 3. Charge DataI C , COLLECTOR CURRENT (mA)Q , C H A R G E (n C )2.03.05.07.0101.00.10.70.5Figure 4. Turn −On Time IC , COLLECTOR CURRENT (mA)2030505.0107.0Figure 5. Rise and Fall TimesI C , COLLECTOR CURRENT (mA)Figure 6. Storage Time I C , COLLECTOR CURRENT (mA)Figure 7. Fall TimeI C , COLLECTOR CURRENT (mA)25°C100°CTRANSIENT CHARACTERISTICS0.30.2t s , S T O R A G E T I M E (n s )′t , T I M E (n s )t , T I M E (n s )t f , F A L L T I M E (n s )701002030505.0107.0701001002003070503006.08.04.02.0Figure 8. Frequency Effects f, FREQUENCY (kHz)SMALL −SIGNAL CHARACTERISTICS NOISE FIGUREV CE = 10 Vdc, T A = 25°C; Bandwidth = 1.0 HzN F , N O I S E F I G U R E (d B )10N F , N O I S E F I G U R E (d B )Figure 9. Source Resistance EffectsR S , SOURCE RESISTANCE (OHMS)h PARAMETERSV CE = 10 Vdc, f = 1.0 kHz, T A = 25°CThis group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high −gain and a low −gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.h i e , I N P U T I M P E D A N C E (O H M S )Figure 10. Input ImpedanceI C , COLLECTOR CURRENT (mA)50 k 50020 k 10 k 5.0 k2.0 k1.0 k Figure 11. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)10Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)7.05.03.02.01.00.70.50.3h , O U T P U T A D M I T T A N C E ( m h o s )o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e m -4Figure 13. DC Current GainI C , COLLECTOR CURRENT (A)Figure 14. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.20.2V , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )0CE 0.001502503005000.01h , D C C U R R E N T G A I N0.101F E 400Figure 15. Collector −Emitter SaturationVoltage vs. Collector CurrentI C , COLLECTOR CURRENT (A)0.150.200.300.350.05Figure 16. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (V )0.010.10- 0.50- 1.0- 1.5- 2.010.0001C O E F F I C I E N T (m V /C )°- 2.50.010.11.01101001502003504500.0010.100.25100Figure 17. Base −Emitter Saturation Voltage vs.Collector CurrentFigure 18. Base −Emitter Turn On Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (A)I C , COLLECTOR CURRENT (A)V B E (s a t ), B A S E −E M I T T E R S A T U R A -T I O N V O L T A G E (V )V B E (o n ), B A S E −E M I T T E R T U R N O N V O L T A G E (V )Figure 19. Input Capacitance vs. Emitter BaseVoltage Figure 20. Output Capacitance vs. CollectorBase VoltageV eb , EMITTER BASE VOLTAGE (V)V cb , COLLECTOR BASE VOLTAGE (V)63210911131519215030251001.52.53.54.56.58.5C i b o , I N P U T C A P A C I T A NC E (p F )C o bo , O U T P U T C A P A C I T A N C E (p F )17 5.545515203540457.5Figure 21. Safe Operating Area Figure 22. Current −Gain −Bandwidth ProductV CE , COLLECTOR EMITTER VOLTAGE (V)I C , COLLECTOR CURRENT (mA)I C , C O L L E C T O R C U R R E N T (A )f T , C U R R E N T −G A I N −B A N D W I D T H (M H z )PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APSOLDERING FOOTPRINT**For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L12.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q °°°°ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMMBT4401LT1G MMBT4401LT3G MMBT4401LT1。