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纳米氧化锌的制备方法纳米氧化锌是一种具有广泛应用前景的纳米材料，在催化、光催化、光电子器件、生物医学和涂料等领域有着重要的应用价值。
本文将介绍几种常见的纳米氧化锌的制备方法，包括溶胶-凝胶法、热分解法、水热法和气相沉积法。
溶胶-凝胶法是一种常用的制备纳米氧化锌的方法。
其步骤如下：首先，将适量的锌盐溶解在溶剂中，例如乙醇、甲醇或水。
然后，加入适量的碱溶液用于调节pH值。
溶液中的锌离子和碱离子反应生成锌氢氧盐沉淀。
接下来，在适当的温度下，将沉淀进行热处理。
最后，通过分散剂和超声处理将沉淀分散成纳米颗粒。
该方法制备的纳米氧化锌具有粒径均匀、可控性强、纯度高等优点。
热分解法是一种制备纳米氧化锌的简单、经济的方法。
该方法以有机锌化合物或无机锌化合物为前驱体，通过热分解反应生成纳米氧化锌。
常见的有机锌化合物包括锌醋酸盐、锌乙酸盐等，无机锌化合物包括氯化锌、硝酸锌等。
首先，将前驱体在有机溶剂中溶解，然后通过热解、煅烧等方法将前驱体转化为氧化锌纳米颗粒。
该方法制备的纳米氧化锌具有晶体结构好、粒径可调节等优点。
水热法是一种常用的制备纳米氧化锌的方法。
其步骤如下：首先，将适量的锌盐和氢氧化物溶解在水中，形成混合溶液。
然后，将混合溶液加入到压力容器中，在一定的温度和压力下进行加热反应。
反应完成后，通过离心和洗涤的方式将沉淀分离，然后经过干燥处理得到纳米氧化锌。
该方法制备的纳米氧化锌具有粒径小、分散性好等优点。
气相沉积法是一种常用的制备纳米氧化锌的方法。
其步骤如下：首先，将适量的氧化锌前驱体溶解在有机溶剂中，形成溶液。
然后，将溶液填充到化学气相沉积设备中，并通过控制沉积温度、气体流量和时间等参数，使溶液中的前驱体在载气的作用下分解生成纳米氧化锌。
最后，通过对晶粒尺寸和形貌进行表征，得到纳米氧化锌的相关信息。
该方法制备的纳米氧化锌具有晶粒尺寸均匀、形貌可调节等优点。
综上所述，溶胶-凝胶法、热分解法、水热法和气相沉积法是几种常见的制备纳米氧化锌的方法。
摘要纳米氧化锌是一种面向2l世纪的新型高功能精细无机产品，其粒径介于l-100纳米。
又称为超微细氧化锌。
由于颗粒尺寸的细微化,比表面积急剧增加,使得纳米氧化锌产生了其本体块状材料所不具备的表面效应、小尺寸效应和宏观量子隧道效应等。
因而,纳米氧化锌在磁、光、电、化学、物理学、敏感性等方面具有一般氧化锌产品无法比拟的特殊性能和新用途，在橡胶、涂料、油墨、颜填料、催化剂、高档化妆品以及医药等领域展示出广阔的应用前景。
纳米氧化锌由于其巨大的表面能，导致颗粒很容易团聚在一起．要使纳米氧化锌的种种特殊性能得以充分利用，首先必须解决纳米粒子之问的团聚及在溶剂中分散性能差的问题．表面活性剂是一种常用的表面改性剂，目前，国内外采用表面活性剂作为纳米粉体改性剂的研究工作并不少见．本文采用水热合成法制备纳米氧化锌，通过在反应过程中加入复合型表面活性剂（油酸/十二烷基硫酸钠）对其进行表而修饰改性，改善纳米ZnO的水溶性和颗粒团聚的现象,制备出了粒径更小、分散性更好的纳米氧化锌．关键词：纳米氧化锌；粒径；复合型表面活性剂复合型表面活性剂对纳米氧化锌粒径和形貌的影响研究前言纳米技术的发展对世界经济的发展将起到推动作用。
纳米材料的制备与性能研究有着十分重要的意义，而对于纳米材料的表面修饰是纳米材料制备、加工和应用过程中具有决定意义的关键技术。
ZnO作为纳米化的半导体材料不仅具有宽频带、强吸收和“蓝移”现象，还能产生光学非线性响应，具有更优异的光电催化活性，在发光材料、非线性光学材料、光催化材料等方面也应用广泛。
纳米氧化锌的化学法制备包括气相法、液相法和固相法，其中液相法对设备要求不高，成本低，产品纯度高，适于大规模生产。
液相法主要有直接沉淀法和均匀沉淀法，其中在直接沉淀法基础上又发展了用表面活性剂对纳米氧化锌进行表面改性的方法[1]。
目前已有多种不同用途的纳米ZnO的合成方法，但是没有很好解决纳米ZnO由于粒径小、表面能大等因素引起的团聚问题；另一方面ZnO的水溶性差，难以均匀分散在水溶液中，为此需要对无机粉体表面进行修饰，以解决团聚和相容性问题。
纳米氧化锌介绍与应用纳米氧化锌(ZnO)粒径介于1-100 nm之间，是一种面向21世纪的新型高功能精细无机产品，表现出许多特殊的性质，如非迁移性、荧光性、压电性、吸收和散射紫外线能力等，利用其在光、电、磁、敏感等方面的奇妙性能，可制造气体传感器、荧光体、变阻器、紫外线遮蔽材料、图像记录材料、压电材料、压敏电阻、高效催化剂、磁性材料和塑料薄膜等。
概述中文名：纳米氧化锌英文名：Zinc oxide，nanometer 别名：纳米锌白；Zinc White nanometer CAS RN.：1314-13-2 分子式：ZnO 分子量：81.37形态纳米氧化锌是一种多功能性的新型无机材料，其颗粒大小约在1～100纳米。
由于晶粒的细微化，其表面电子结构和晶体结构发生变化，产生了宏观物体所不具有的表面效应、体积效应、量子尺寸效应和宏观隧道效应以及高透明度、高分散性等特点。
近年来发现它在催化、光学、磁学、力学等方面展现出许多特殊功能，使其在陶瓷、化工、电子、光学、生物、医药等许多领域有重要的应用价值，具有普通氧化锌所无法比较的特殊性和用途。
纳米氧化锌在纺织领域可用于紫外光遮蔽材料、抗菌剂、荧光材料、光催化材料等。
由于纳米氧化锌一系列的优异性和十分诱人的应用前景，因此研发纳米氧化锌已成为许多科技人员关注的焦点。
纳米氧化锌金属氧化物粉末如氧化锌、二氧化钛、二氧化硅、三氧化二铝及氧化镁等，将这些粉末制成纳米级时，由于微粒之尺寸与光波相当或更小时，由于尺寸效应导致使导带及价带的间隔增加，故光吸收显著增强。
各种粉末对光线的遮蔽及反射效率有不同的差异。
以氧化锌及二氧化钛比较时，波长小于350纳米（UVB）时，两者遮蔽效率相近，但是在350～400nm（UVA）时，氧化锌的遮蔽效率明显高于二氧化钛。
同时氧化锌（n=1.9）的折射率小于二氧化钛（n=2.6），对光的漫反射率较低，使得纤维透明度较高且利于纺织品染整。
纳米氧化锌还可用来制造远红外线反射纤维的材料，俗称远红外陶瓷粉。
氧化锌纳米涂层具有多种作用：
它可以作为抗菌除臭消毒及抗紫外线的产品。
在阳光尤其是紫外线的照射下，纳米氧化锌能够把空气中的氧气活性化从而变为活性氧，活性氧能把大多数的有机物氧化，从而杀死大多数病菌病毒。
同时，纳米氧化锌对紫外线的吸收能力强，可以对紫外线产生屏蔽作用。
纳米氧化锌无毒无味、对皮肤无刺激性，且具有消炎、防皱和保护等功能，因此可以用作化妆品的防晒剂，帮助皮肤避免紫外线伤害。
在建材产品中，如玻璃、涂料中加入适宜的纳米氧化锌材料，可以减少光的透射和热传递效果，产生隔热、阻燃等效果。
纳米氧化锌还可以用于制备抗紫外线、耐光老化性能好的涂料和其它高分子材料。
在乳胶漆中使用纳米氧化锌可以增大乳胶漆对紫外线辐射的抵抗力，减弱乳胶漆对潮湿环境条件的敏感性，提高耐老化性。
同时，氧化锌能够散射光线，使乳胶漆的遮盖力得到一定程度的改善。
总的来说，氧化锌纳米涂层在防护、抗菌、建材、涂料等多个领域都有广泛的应用。
如需了解更多，可以咨询材料学专家或查阅相关文献资料。
纳米氧化锌国家标准
纳米氧化锌是一种重要的纳米材料，具有较高的比表面积和特殊的物理化学性质，被广泛应用于光电子、催化剂、生物医药等领域。
为了规范纳米氧化锌产品的生产和应用，保障产品质量和安全，国家相关部门制定了《纳米氧化锌国家标准》，以下将对该标准进行详细介绍。
首先，该标准明确了纳米氧化锌产品的命名和分类。
根据产品的形态和用途，
纳米氧化锌被分为不同的类别，并对各类别产品的命名进行了规范，以便消费者和生产企业能够准确理解和使用标准中的术语。
其次，标准对纳米氧化锌产品的基本要求进行了规定。
包括产品的外观要求、
化学成分、晶体结构、粒径分布、比表面积、晶粒尺寸等方面的指标，以及产品的包装、标识和运输要求，确保产品在生产、储存、运输和使用过程中能够保持稳定的性能和安全的使用。
此外，标准还对纳米氧化锌产品的检测方法和技术要求进行了详细的规定。
包
括产品质量的检测方法、仪器设备的要求、检测结果的评定标准等内容，为生产企业和检测机构提供了技术支持和指导，保证产品检测结果的准确性和可靠性。
最后，标准还对纳米氧化锌产品的质量控制和质量管理进行了规范。
包括生产
企业的质量管理体系要求、产品质量的监控和评价、不合格产品的处理等内容，为生产企业提供了质量管理的指导和要求，保证产品质量的稳定和可控。
总的来说，纳米氧化锌国家标准的制定，为纳米氧化锌产品的生产和应用提供
了技术支持和规范指导，有利于促进纳米氧化锌产品的质量提升和产业健康发展。
希望生产企业和相关部门能够严格遵守该标准的要求，确保纳米氧化锌产品的质量和安全，为行业发展和消费者利益保驾护航。
纳米氧化锌催化剂
纳米氧化锌（ZnO）催化剂是一种具有广泛应用前景的半导体催化剂。
由于其独特的物理
和化学性质，纳米氧化锌在许多领域表现出优异的催化性能。
以下是一些关于纳米氧化锌催化剂的主要特点和应用：
1. 光催化性能：纳米氧化锌具有较高的光催化活性，可在光照条件下降解有机污染物、抗菌和防腐蚀。
在环境治理领域，纳米氧化锌光催化剂可用于处理水体中的有害物质，如降解水中的重金属离子、去除染料和有机污染物等。
2. 电催化性能：纳米氧化锌具有优异的电催化性能，可用于氧还原反应（ORR）和氧
析出反应（OER）。
在能源领域，纳米氧化锌可作为催化剂应用于燃料电池、电解水制氢
和锂离子电池等。
3. 催化剂载体：纳米氧化锌具有较大的比表面积和良好的分散性，可作为催化剂载体，提高催化剂的活性和稳定性。
例如，在固相催化剂中，纳米氧化锌可作为载体提高金属催化剂的催化性能。
4. 抗菌性能：纳米氧化锌具有优异的抗菌性能，可广泛应用于抗菌材料、抗菌涂料、纺织品等领域。
5. 防腐蚀性能：纳米氧化锌可作为防腐蚀涂料的添加剂，提高涂料的防腐蚀性能。
纳米氧化锌催化剂的研究重点包括提高催化性能、改善稳定性和活性、优化制备方法以及探索新的应用领域。
随着纳米技术的发展，纳米氧化锌催化剂在未来有望在更多领域发挥重要作用。
纳米氧化锌与间接法氧化锌的区别
(1) 纯度；间接法氧化锌的纯度最高可以超过99.7%。
若选用高品质的锌锭作原料，重金属的含量也可控制的很低。
但纳米氧化锌的纯度很难做到99%以上,其主要原因是有部分未分解的碱式碳酸锌，以及湿法生产中不可避免产生的硫酸盐，如硫酸钙、硫酸镁、硫酸钠等。
但重金属的含量可以控制到比间接法氧化锌更低（如在5个ppm的范围内甚至更低）。
（2）粒度、比表面积、堆积密度等活性指标不同。
间接法氧化锌的粒度较粗，是纳米氧化锌颗粒直径的几十到几千倍。
(3) 纳米氧化锌粒径小、比表面积大、堆密度小。
它的高活性使得其应用成本低、性能好、使用面宽。
在饲料中，它比间接法氧化锌具有更强的杀菌及收敛作用；它是催化剂中唯一可选的氧化锌；在橡胶行业，与间接法氧化锌相比，纳米氧化锌可以减量使用。
超细粒度使其在化妆品中起到防紫外线及杀菌作用；它还可做为抗菌及抗紫外线的布料处理原料。
纳米氧化锌的物理制备方法
纳米氧化锌的物理制备方法主要包括以下几种：
1. 机械化学合成：通过球磨机对原料进行机械化学活化，合成前驱体粉末，再经过热处理得到纳米氧化锌。
这种方法可以生成直径在10~40nm范围内的氧化锌纳米颗粒。
2. 脉冲激光沉积（PLD）：这是一种薄膜生长技术，利用激光照射使靶材烧蚀，烧蚀物最终沉积到衬底形成薄膜。
此法能制备与靶材成分一致的化合物薄膜。
3. 磁控溅射：通过高能粒子轰击靶材表面，使得靶材表面的原子或分子被溅射出来，并在衬底表面沉积形成薄膜。
4. 喷雾热解：将原料溶液通过喷雾嘴喷洒成雾状，在高温下进行热解，生成氧化锌纳米颗粒。
5. 等离子体合成：利用等离子体的高温和高活性，使得气体中的分子发生化学反应，生成氧化锌纳米颗粒。
6. 分子束外延（MBE）：通过控制分子束的流量和能量，在衬底表面外延生长氧化锌薄膜。
这些方法各有特点，可以根据具体需求选择合适的方法来制备纳米氧化锌。
Synthesis and characterization of nanophase zinc oxide materialsY.Aditya Sumanth 1•R.Annie Sujatha 1•S.Mahalakshmi 1•P.C.Karthika 1•S.Nithiyanantham 2,4•S.Saravanan 3•M.Azagiri 1Received:15August 2015/Accepted:19October 2015/Published online:24October 2015ÓSpringer Science+Business Media New York 2015Abstract The substantial and intriguing applications in the field of optoelectronics,the fabrication of nano struc-ture of ZnO based UV LEDs,FETs has been stalled because of the challenges/demand to put forth in the growth of highly stable,low resistive and high device performance.Growth of these Nano structure is difficult because of the self-compensating native donor defects,oxygen vacancies (V o )and zinc interstitials (Zn i )in the system.The n-type conductivity can be realized by doping with group III elements,and the band gap of ZnO lies in UV region and it can be used as UV detector.In presence of UV illumination,electrical conductivity increase due to generation of more charge carriers.In this present work,the authors to discuss the formation of pure and indium doped ZnO nanorods by chemical bath deposition.1IntroductionZinc oxide is II–VI group with a wide direct band gap 3.37eV and the most stable crystal structure of ZnO is hexagonal wurzite structure is an excellent for opto-elec-tronic device application.It has a direct band gap in the near ultraviolet (UV)spectral region.Excitonic binding energy of ZnO is 60meV.So the excitonic emission processes can persist at or even above room temperature.Zinc oxide has been widely used in photonic crystals,light emitting diodes,photodetectors,photodiodes,field effect transistors [1–3].,have been used for growth of highly oriented ZnO nanor-ods.Chemical processes facilitate the fabrication of large scale manufacturing at low in temperature and costless technique.A variety of ZnO nanostructures can be obtained simply by changing the precursor chemicals,their concen-trations,growth temperature reaction time and pH of the solution.Due to their larger band gap which make them exploitable for many applications based on UV photode-tection and flat panel display and solar cells [2,4,5].ZnO is exhibit nanostructures with different morphologies [6,7].Optically pumped lasing has been reported in ZnO platelets,thin films,clusters [8,9].The transverse acoustic and optical,longitudinal acoustic and optical studies are dis-cussed through Raman Studies [10–12].The electrical properties of ZnO and its belongs to a group of transparent conducting oxide with strong doping,chemical and thermal stability,and the decay current of UV [13].2Materials synthesis proceduresAll Analar grade chemicals are purchased from S.D.fine chemical,India.Chemical bath deposition is considered to be one of the suitable methods for synthesis.The entire&S.Nithiyananthams_nithu59@;bknithu@1Department of Physics and Nanotechnology,Centre for Nano Device Fabrication,SRM University,Kattankulathur,Kanchipuram District,Tamilnadu 603203,India2School of Physical Sciences and Femtotechnology,(Thin Film/Magnetism and Magnetic Materials Divisions),SRM University,Kattankulathur,Kanchipuram District,Tamilnadu 603203,India3National Centre for Photovoltaic Research &Education (NCPRE),Department of Electrical Engineering,Indian Institute of Technology Bombay,Powai,Mumbai 400076,India4Post Graduate and Research Department of Physics (Affiliated -Tiruvalluvar University),indasamyCollege of Arts and Science,Tindivanam Vilupuram District,Tamilnadu 604002,IndiaJ Mater Sci:Mater Electron (2016)27:1616–1621DOI 10.1007/s10854-015-3932-0process of synthesis consists of the zinc oxide seed layer and growth of zinc oxide nanorods on the seed layer.The process involves preparation of a sol from zinc acetate and sodium hydroxide where zinc acetate is measured 0.01M molarity based in ethanol and heated at a temperature of 70°C in ethanol,with sodium hydroxide of 0.02M in ethanol being added drop by drop to the solution for 30min by the usual procedure [5].The ZnO nanorods are prepared through the initial solution is prepared by dis-solving zinc acetate of 2.195g in 250ml deionised water.Indium trichloride is measured 0.027g and dissolved in 20ml deionised water.The solution is then added to zinc acetate solution and then placed on hot plate at 80°C.The seeded glass substrates fitted into Teflon grooves and aresuspended in the solution after adding ethylenediamine.This setup is maintained at 80°C for 1h.After deposition samples are rinsed with deionised water and dried for some time.This is a brief overview of chemical bath deposition through which aligned zinc oxide nanostructures can be grown at lower temperatures compared to other methods [13].3Experimental techniquesAn X-Ray diffraction is one of the most widely used tech-niques to analyse various kinds of matter to determine the structure,phase purity,crystallite size,strain andmanyFig.1XRD spectra of a pure and b IndiuumdopedFig.2Raman spectra of a pure and b indium doped ZnOmore.Diffraction effects are observed when electromagnetic radiation impinges on periodic structures with geometries on the length scale of the wavelength of the radiation.The qualitative and quantitative analyses are made through phase transformation,lattice parameter,composition and phase fraction through XRD pattern[14].This shift in wavelength depends on the chemical structure of the molecules present in the material investigated.Raman Spectroscopy is one of the most versatile spectroscopic techniques used to observe vibrational modes in the system.It works on the principles of inelastic scattering phenomenon when laser light interacts with molecular vibrations,phonons and other excitations in the system.The process of work is that when a small fraction of light is scattered by molecules,wavelength of the small fraction of scattered light differs from that off the incident beam.Raman spectroscopy is range from measuring the shift in phonon frequencies,measuring the local environment and stress to study phase transitions in crystals through Raman studies.A scanning electron microscope(SEM)is a type of electron microscope that produces images of a sample by scanning it with a focused beam of electrons.The electrons interact with electrons in the sample,producing various signals that can be detected and that contain information about the sample’s surface topography and composition.SEM can achieve resolution of few nanometres.Specimens can be characterised in high vac-uum,low vacuum and in environmental condition.A cur-rent–voltage characteristic or I–V curve(current–voltage curve)is a relationship,typically represented as a chart or graph,between the electric current through a circuit, device,or material,and the corresponding voltage or potential difference across it.In our case we use Keith-ley2601sourcemeter and Labview software to develop a program and run the system atfixed bias voltage.I–V characteristics can be used to determine the electrical conductivity,photoresponse etc.4Results and discussionFrom the Fig.1a,b below shows the X-Ray diffraction of zinc oxide nanorods coated on glass substrates.The pro-nounce peaks at the(002)plane indicate higher levelof Fig.3SEM images of a pure and b indium doped ZnOcrystalline growth along the c-axis,vertical to the glass substrate.The other peaks at (100)and (101)are also present.The same can also be confirmed by the JCPDS reference number 36-1451.Due to better nucleation pro-cess,this confirming the seed layer gives better orientation compared with out the seed layer.XRD of In doped ZnOVoltage (V)Voltage (V)C u r r e n t (A )(b)Current and Voltage (I-V)Characteristics of a pure and b indium doped ZnO5001000150020005101520C u r r e n t (A )Time (S)UV ON UV OFFZnO-10001000200030004000500060007000020406080100120Time (S)UV ONUV OFFIn:ZnO(a)Transient characteristics of a pure and b indium doped ZnOdoes not show any additional peak which further confirms that there is no other phase formation by doping.The above results suggest the high crystallinity of the nanostructures and c-axis oriented growth.The vibrational modes of the In doped and undoped ZnO are presented in Figs.2a,b.From the samefigures,the small peaks at330cm-1which is A1and a sharp peak at 438cm-1attributed to E2high frequency mode corre-sponding to oxygen motion.Other mode observed at 560cm-1is attributed to surface phonon mode.After comparing the observed results in intensity of the peaks which is due to reduction in lattice symmetry by the added dopent.The prepared samples subjected to Field Emission Scanning Electron Microscopy(FE-SEM,Quanta3D) analysis and the images obtained are shown in Figs.3a,b. The Images indicate the hexagonal structure and arrays of zinc oxide nanorods distributed evenly and oriented across the c-axis.The average diameter of the nanorods varied from30to40nm and further it clearly show that the sample prepared by the above route has pure ZnO phase [19].The Presence of a small additional layer is visible in doped structure images which can be attributed to the existence of dopant.From the Fig.4a,b,the electrical and conducting properties of synthesised samples are studied through(I–V) plot,and the experiments are performed with in and absence of UV illumination,2orders of increment is observed in both doped and undoped ZnO nanorods in the presence of UV.The basic mechanism in UV involves oxygen molecules adsorbed on the surface capture free electrons in the dark state leading to the formation of depletion layer and it leads to bending of the bands and hence the total carrier concentration is affected and the conductivity is decreased[7].When the nanorods are subjected to UV illumination with energies more than the band gap of ZnO,the photo generated holes migrate to the negatively charged oxygen molecules and neutralize them and these oxygen molecules desorbs from the surface.The unpaired photo generated electrons are responsible for the increase in photo current. However after saturation,oxygen molecules start re-ad-sorbing and photo current increases as long as an equilib-rium is reached between desorption and re-adsorbing oxygen molecules.Once the UV illumination is turned off,the electrons and holes recombine with each other with some electrons still captured by the re-adsorbed oxygen molecules[6].And as a result the conductivity decreases. Owing to the surface and volume ratio of the nanorods as can be seen in morphology,oxygen molecules are easily re-adsorbed and may trap some electrons and this decreases the current(Fig.5).From the Table1,the growth and decay time constants are calculated fromfittings of the plots with exponential function.Photoconductive gain was calculated to be82and 117for pure and doped zinc oxide.The time constants of growth current s1when UV on are29.28and75.11s for pure and doped nanostructures[8].The time constant of decay current,s2when UV is on is calculated to be475.29 and2323.7s for ZnO and In doped ZnO respectively.The presence of two time constants when UV is off is attributed to two different carrier relaxation mechanisms one being surface adsorbed oxygen and the other being defect level mechanism.The defect level is due to the presence of V Zn and Zn i defects which attract water molecules and as a result become recombination centres due to the formation of Zn2?states.Thefirst time constant,s3is calculated to be 35.91and378.51s.Similar results are reported by Anderson Janotti[15]and the second time constants s4are 165.38s and99.15s for doped and undoped structures respectively.This difference in time constants for indium doped zinc oxide is still under investigation[15–18].5ConclusionsThe deposition of ZnO undoped and Indium doped nanor-ods are carried out by chemical bath deposition techniques. An X-rays diffraction study reveals ZnO is the compound is crystalline and it’s grown along c-axis.The band gap of ZnO is estimated as 3.7eV.The vibrational modes of samples are analysed with Raman spectra,the oxygen motion causes the reduction in lattice symmetry.The detailed analysis of SEM suggested that the hexagonal structure and the average size are*35nm.The IV studies reveal the conductivity increases with re-absorption phe-nomena confirmed.The relaxation mechanism studied with growth and decay time,time constant and further reveals the semiconducting properties of the characteristics samples. 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